JP2019153750A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP2019153750A JP2019153750A JP2018039912A JP2018039912A JP2019153750A JP 2019153750 A JP2019153750 A JP 2019153750A JP 2018039912 A JP2018039912 A JP 2018039912A JP 2018039912 A JP2018039912 A JP 2018039912A JP 2019153750 A JP2019153750 A JP 2019153750A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- semiconductor element
- semiconductor device
- radiator plate
- absorption groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 104
- 229910000679 solder Inorganic materials 0.000 claims abstract description 184
- 238000010521 absorption reaction Methods 0.000 claims abstract description 48
- 230000002093 peripheral effect Effects 0.000 claims abstract description 6
- 238000001179 sorption measurement Methods 0.000 abstract description 6
- 239000004020 conductor Substances 0.000 description 43
- 125000006850 spacer group Chemical group 0.000 description 38
- 238000007789 sealing Methods 0.000 description 17
- 238000005476 soldering Methods 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 230000036544 posture Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000003892 spreading Methods 0.000 description 4
- 238000005304 joining Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
- H01L2224/331—Disposition
- H01L2224/3318—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/33181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Die Bonding (AREA)
Abstract
Description
12:封止体
14:P端子
15:N端子
16:O端子
18、19:信号端子
20、40:半導体素子
22、122、222:第1上側放熱板
22c、42c、46c:継手部
22d、42d、122d、222d:上側放熱板のはんだ吸収溝
22e、42e:継手部のはんだ吸収溝
23、25、27、50:はんだ(層)
24、44:導体スペーサ
26:第1下側放熱板
42:第2上側放熱板
46:第2下側放熱板
D1:第1方向
D2:第2方向
S1、S2:はんだ接合エリア
Claims (1)
- 第1部材と、
前記第1部材に、はんだ層を介して接合された第2部材と、を備え、
前記第1部材には、前記はんだ層の余剰なはんだを収容しているはんだ吸収溝が設けられており、
前記第1部材の前記はんだ層に接触する範囲をはんだ接合エリアとしたときに、
前記はんだ接合エリアの周縁のうち、第1方向において対向する二辺が前記はんだ吸収溝内に位置するとともに、第2方向において対向する他の二辺が前記はんだ吸収溝外に位置する、
半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018039912A JP7106891B2 (ja) | 2018-03-06 | 2018-03-06 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018039912A JP7106891B2 (ja) | 2018-03-06 | 2018-03-06 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019153750A true JP2019153750A (ja) | 2019-09-12 |
JP7106891B2 JP7106891B2 (ja) | 2022-07-27 |
Family
ID=67947043
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018039912A Active JP7106891B2 (ja) | 2018-03-06 | 2018-03-06 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP7106891B2 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6346844U (ja) * | 1986-09-16 | 1988-03-30 | ||
JP2004319847A (ja) * | 2003-04-17 | 2004-11-11 | Shimada Phys & Chem Ind Co Ltd | 面実装半田付け複合部品 |
JP2005136018A (ja) * | 2003-10-29 | 2005-05-26 | Denso Corp | 半導体装置 |
JP2008166626A (ja) * | 2006-12-29 | 2008-07-17 | Denso Corp | 半導体装置 |
JP2017159335A (ja) * | 2016-03-10 | 2017-09-14 | 株式会社デンソー | 半導体装置及びその製造方法 |
-
2018
- 2018-03-06 JP JP2018039912A patent/JP7106891B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6346844U (ja) * | 1986-09-16 | 1988-03-30 | ||
JP2004319847A (ja) * | 2003-04-17 | 2004-11-11 | Shimada Phys & Chem Ind Co Ltd | 面実装半田付け複合部品 |
JP2005136018A (ja) * | 2003-10-29 | 2005-05-26 | Denso Corp | 半導体装置 |
JP2008166626A (ja) * | 2006-12-29 | 2008-07-17 | Denso Corp | 半導体装置 |
JP2017159335A (ja) * | 2016-03-10 | 2017-09-14 | 株式会社デンソー | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP7106891B2 (ja) | 2022-07-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2019153752A (ja) | 半導体装置 | |
JP7040032B2 (ja) | 半導体装置 | |
US20220199578A1 (en) | Semiconductor device | |
JP2017028105A (ja) | 半導体装置 | |
JP2019083292A (ja) | 半導体装置 | |
JP7147186B2 (ja) | 半導体装置 | |
CN111354710A (zh) | 半导体装置及其制造方法 | |
US10847448B2 (en) | Semiconductor device and method of manufacturing the same | |
JP7118205B1 (ja) | 半導体装置及びそれを用いた半導体モジュール | |
JP7106891B2 (ja) | 半導体装置 | |
JP7156172B2 (ja) | 半導体装置 | |
JP7306248B2 (ja) | 半導体モジュール | |
US20190221494A1 (en) | Semiconductor device | |
JP2021180234A (ja) | 半導体モジュール | |
JP7069848B2 (ja) | 半導体装置 | |
JP2019153751A (ja) | 半導体装置 | |
JP7192886B2 (ja) | 半導体装置 | |
JP7147187B2 (ja) | 半導体装置 | |
US11658231B2 (en) | Semiconductor device | |
JP7159609B2 (ja) | 半導体装置 | |
JP7095641B2 (ja) | 半導体装置 | |
JP2018037452A (ja) | パワー半導体モジュール | |
JP2019067950A (ja) | 半導体装置の製造方法 | |
US20230207418A1 (en) | Semiconductor module | |
JP7088094B2 (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20200401 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210222 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20211208 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211214 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220119 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220614 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220627 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 7106891 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |