JP2019153574A - 電子顯微鏡試料チップ及びその関連応用 - Google Patents
電子顯微鏡試料チップ及びその関連応用 Download PDFInfo
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 66
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- 238000000034 method Methods 0.000 claims description 5
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- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
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- 238000000231 atomic layer deposition Methods 0.000 description 3
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- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- UMQDJVWCDGLZGF-UHFFFAOYSA-N P(O)(O)(O)=O.C(C)(=O)O.[N+](=O)(O)[O-].F Chemical compound P(O)(O)(O)=O.C(C)(=O)O.[N+](=O)(O)[O-].F UMQDJVWCDGLZGF-UHFFFAOYSA-N 0.000 description 1
- ATPYWZKDGYKXIM-UHFFFAOYSA-N acetic acid phosphoric acid Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.OP(O)(O)=O ATPYWZKDGYKXIM-UHFFFAOYSA-N 0.000 description 1
- MKTJTLRLXTUJCM-UHFFFAOYSA-N azanium;hydrogen peroxide;hydroxide Chemical compound [NH4+].[OH-].OO MKTJTLRLXTUJCM-UHFFFAOYSA-N 0.000 description 1
- 239000008280 blood Substances 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
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- 238000012423 maintenance Methods 0.000 description 1
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- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/2204—Specimen supports therefor; Sample conveying means therefore
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- G—PHYSICS
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- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2002—Controlling environment of sample
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2002—Controlling environment of sample
- H01J2237/2003—Environmental cells
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- H—ELECTRICITY
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2005—Seal mechanisms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
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- Life Sciences & Earth Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Sampling And Sample Adjustment (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Abstract
Description
(2)薄膜 (3)シーラント
(4)試料充填放置エリア (5)カバー
(51)本体 (511)凹槽
(512)翼部 (52)第1の薄膜
(6)台座 (61)基体部
(611)溝 (62)溶接部
(63)第2の薄膜
<本発明の実施方式>
(1)電子顕微鏡試料チップ (11)緩衝層
(12)薄膜層 (13)主体層
(14)主体開口 (15)緩衝開口
(16)スペーサ (17)台座(第2の台座)
(18)試料収容空間 (19)台座(第1の台座)
(20)チャンネル (21)電極
(22)加熱素子 (3)載置部件台座
(31)流通経路 (32)穿孔
(33)電気接続子 (331)第1の電気接続子
(332)第2の電気接続子 (34)ベース部
(35)カバー部 (36)貫通孔
(5)載置台台座 (51)通路
(52)電気接続体 (521)第1の電気接続体
(522)第2の電気接続体
Claims (10)
- 第1の台座と、スペーサと、第2の台座を含んでいる電子顕微鏡試料チップであり、
前記第1の台座は、
薄膜層と、
前記薄膜層の上に設置され、かつ前記薄膜層のエリアに対応する緩衝開口を有する緩衝層と、
前記緩衝層の上に設置され、かつ前記薄膜層が前記緩衝開口のエリアを露出するために前記緩衝開口に対応する主体開口を有し、且つ厚さが10μmから800μmである主体層と、を含み、
前記薄膜層と、前記緩衝層と、前記主体層のエッチング特性が異なり、
前記スペーサは、前記第1の台座の下に設置され、かつ前記薄膜層が前記緩衝開口のエリアに対応する試料収容空間を区画し、
前記第2の台座は、前記スペーサの下に設置されていること、を特徴とする電子顕微鏡試料チップ。 - 前記主体開口の側表面と隣接する主体層の表面との間の夾角は、85度から95度の角度になり、前記主体開口の側表面と隣接する緩衝開口の側表面との間の夾角は、170度から190度の角度になることを特徴とする請求項1に記載のチップ。
- 前記薄膜層の材料は窒化ケイ素または炭化ケイ素であり、厚さは5nmから100nmであり、
前記緩衝層の材料は二酸化ケイ素またはクロムであり、厚さは50nmから1μmであり、
前記主体層の材料はシリコンまたはサファイアであり、スペーサの厚さは100nmから100μmである、
ことを特徴とする請求項1に記載のチップ。 - 前記スペーサはさらに前記試料収容空間とを連通する少なくとも二つのチャンネルを有することを特徴とする請求項1に記載のチップ。
- 前記スペーサと前記第1の台座または前記第2の台座との間に、さらに少なくとも二つの電極を有し、前記複数の電極は前記試料収容空間とを連通し、前記複数の電極の薄膜層上の正投影は前記薄膜層が緩衝開口のエリアに対応する箇所まで延ばされていることを特徴とする請求項1に記載のチップ。
- 前記スペーサと前記第1の台座または前記第2の台座との間に、さらに加熱素子を有し、前記加熱素子は前記試料収容空間とを連通し、前記加熱素子の薄膜層上の正投影は前記薄膜層が緩衝開口のエリアに対応する箇所まで延ばされていないことを特徴とする請求項1に記載のチップ。
- 前記スペーサと前記第1の台座または前記第2の台座との間に、さらに少なくとも二つの電極と加熱素子とを有し、前記複数の電極は前記試料収容空間とを連通し、前記加熱素子は前記試料収容空間とを連通し、前記複数の電極と前記加熱素子とは同じ平面で配置されていることを特徴とする請求項1に記載のチップ。
- 請求項1から7のいずれか一つに記載の試料チップと、
前記チップを収容する載置部件台座と、を含む電子顕微鏡試料載置部件。 - 請求項8に掲示されている試料載置部件と、
前記載置部件を収容する載置台台座と、を含むこと、を特徴とする電子顕微鏡試料載置台。 - 厚さが10μmから800μmの主体層の下に緩衝層を設置し、
前記緩衝層の下に薄膜層を設置し、前記薄膜層と、前記緩衝層と、前記主体層のエッチング特性が異なり、
前記主体層の一部と前記緩衝層の一部をエッチングすることによってそれぞれ主体開口と緩衝開口が形成され、前記主体開口が前記緩衝開口に対応され、および
前記緩衝開口に沿って前記緩衝層の他の部分をエッチングすることにより、前記緩衝開口が薄膜層のエリアに対応させるとともに、主体開口から緩衝開口のエリアに対応する前記薄膜層を露出させること、
を含む電子顕微鏡試料チップの台座の製造方法。
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US201862637816P | 2018-03-02 | 2018-03-02 | |
US62/637,816 | 2018-03-02 | ||
TW107137613A TWI705473B (zh) | 2018-03-02 | 2018-10-24 | 電子顯微鏡樣品晶片及其載具及其載台及其基座之製造方法 |
TW107137613 | 2018-10-24 |
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JP2019153574A true JP2019153574A (ja) | 2019-09-12 |
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JP (1) | JP6694939B2 (ja) |
CN (1) | CN110233092B (ja) |
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WO2022040967A1 (zh) * | 2020-08-26 | 2022-03-03 | 厦门超新芯科技有限公司 | 一种透射电镜高分辨原位温差芯片及其制备方法 |
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JP2008016249A (ja) * | 2006-07-04 | 2008-01-24 | Jeol Ltd | 試料保持体、試料検査方法及び試料検査装置並びに試料検査システム |
US20080135778A1 (en) * | 2006-12-07 | 2008-06-12 | National Tsing Hua University | Specimen kit and fabricating method thereof |
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JP2016213150A (ja) * | 2015-05-13 | 2016-12-15 | 大日本印刷株式会社 | 試料収容セル |
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EP2278306A1 (en) * | 2009-07-13 | 2011-01-26 | Fei Company | Method for inspecting a sample |
TWI433195B (zh) | 2011-10-12 | 2014-04-01 | Nat Univ Tsing Hua | 用於電子顯微鏡之樣品承載裝置及其製作方法 |
CN106290430B (zh) * | 2015-05-22 | 2019-08-02 | 中国科学院苏州纳米技术与纳米仿生研究所 | 原位测量固-液相界面电化学反应的芯片组件 |
EP3345205B1 (en) * | 2015-08-31 | 2023-08-16 | Protochips, Inc. | A mems frame heating platform for electron imagable fluid reservoirs or larger conductive samples |
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Patent Citations (4)
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JP2008016249A (ja) * | 2006-07-04 | 2008-01-24 | Jeol Ltd | 試料保持体、試料検査方法及び試料検査装置並びに試料検査システム |
US20080135778A1 (en) * | 2006-12-07 | 2008-06-12 | National Tsing Hua University | Specimen kit and fabricating method thereof |
JP2009158222A (ja) * | 2007-12-26 | 2009-07-16 | Jeol Ltd | 試料保持体及び観察・検査方法並びに観察・検査装置 |
JP2016213150A (ja) * | 2015-05-13 | 2016-12-15 | 大日本印刷株式会社 | 試料収容セル |
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JP6694939B2 (ja) | 2020-05-20 |
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