JP2019129174A - ウエーハの生成方法およびウエーハの生成装置 - Google Patents
ウエーハの生成方法およびウエーハの生成装置 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000001514 detection method Methods 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims description 28
- 239000013078 crystal Substances 0.000 claims description 22
- 230000000644 propagated effect Effects 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000009751 slip forming Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 230000035699 permeability Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 107
- 239000010410 layer Substances 0.000 description 52
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 20
- 229910010271 silicon carbide Inorganic materials 0.000 description 20
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 238000000926 separation method Methods 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000002407 reforming Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
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- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/047—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by ultrasonic cutting
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02021—Edge treatment, chamfering
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
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- H01L21/02367—Substrates
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67017—Apparatus for fluid treatment
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
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- Crystallography & Structural Chemistry (AREA)
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- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Laser Beam Processing (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
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Abstract
Description
パルスレーザー光線の波長 :1064nm
繰り返し周波数 :60kHz
平均出力 :1.5W
パルス幅 :4ns
集光点の直径 :3μm
集光レンズの開口数(NA) :0.65
送り速度 :200mm/s
6:超音波発生手段
10:マイクロホン
12:剥離検出手段
50:インゴット
58:第一の端面の垂線
70:改質部
72:クラック
74:剥離層
76:ウエーハ
Claims (5)
- インゴットからウエーハを生成するウエーハの生成方法であって、
インゴットに対して透過性を有する波長のレーザー光線の集光点をインゴットの端面から生成すべきウエーハの厚みに相当する深さに位置づけてインゴットにレーザー光線を照射して剥離層を形成する剥離層形成工程と、
生成すべきウエーハに対面させ水の層を介して超音波発生手段を位置づけて超音波を発生させて剥離層を破壊する超音波発生工程と、
音の変化によってインゴットから生成すべきウエーハの剥離を検出する剥離検出工程と、
から少なくとも構成されるウエーハの生成方法。 - 該剥離検出工程において、マイクロホンによって音を収集し、収集した音の振幅がピークとなる音の周波数が所定値に達した際にウエーハが剥離したと検出する請求項1記載のウエーハの生成方法。
- インゴットは、c軸とc軸に対し直交するc面とを有する単結晶SiCインゴットであり、
該剥離層形成工程において、単結晶SiCに対して透過性を有する波長のレーザー光線の集光点を単結晶SiCインゴットの端面から生成すべきウエーハの厚みに相当する深さに位置づけて単結晶SiCインゴットにレーザー光線を照射してSiCがSiとCとに分離した改質部と改質部からc面に等方的に形成されるクラックとからなる剥離層を形成する請求項2記載のウエーハの生成方法。 - インゴットは、端面の垂線に対してc軸が傾きc面と端面とでオフ角が形成されている単結晶SiCインゴットであり、
該剥離層形成工程において、オフ角が形成される方向と直交する方向に改質部を連続的に形成して改質部からc面に等方的にクラックを生成し、オフ角が形成される方向にクラックの幅を超えない範囲で単結晶SiCインゴットと集光点とを相対的にインデックス送りしてオフ角が形成される方向と直交する方向に改質部を連続的に形成して改質部からc面に等方的にクラックを順次生成した剥離層を形成する請求項3記載のウエーハの生成方法。 - インゴットに対して透過性を有する波長のレーザー光線の集光点をインゴットの端面から生成すべきウエーハの厚みに相当する深さに位置づけてインゴットにレーザー光線を照射して剥離層を形成したインゴットからウエーハを生成するウエーハの生成装置であって、
生成すべきウエーハに対面する端面を有し超音波を発生させる超音波発生手段と、
インゴットに隣接して配設されインゴットから空気中に伝播した音を収集するマイクロホンと、
該マイクロホンと連結され音の変化によってインゴットから生成すべきウエーハの剥離を検出する剥離検出手段と、
から少なくとも構成されるウエーハの生成装置。
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018007972A JP7046617B2 (ja) | 2018-01-22 | 2018-01-22 | ウエーハの生成方法およびウエーハの生成装置 |
MYPI2019000223A MY202343A (en) | 2018-01-22 | 2019-01-03 | Wafer producing method and wafer producing apparatus |
SG10201900165XA SG10201900165XA (en) | 2018-01-22 | 2019-01-08 | Wafer producing method and wafer producing apparatus |
KR1020190003900A KR102570139B1 (ko) | 2018-01-22 | 2019-01-11 | 웨이퍼의 생성 방법 및 웨이퍼의 생성 장치 |
US16/251,876 US20190228980A1 (en) | 2018-01-22 | 2019-01-18 | Wafer producing method and wafer producing apparatus |
TW108102199A TWI810237B (zh) | 2018-01-22 | 2019-01-21 | 晶圓的生成方法及晶圓的生成裝置 |
CN201910051891.6A CN110071034B (zh) | 2018-01-22 | 2019-01-21 | 晶片的生成方法和晶片的生成装置 |
DE102019200729.5A DE102019200729A1 (de) | 2018-01-22 | 2019-01-22 | Waferherstellungsverfahren und Waferherstellungsvorrichtung |
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JP2018007972A JP7046617B2 (ja) | 2018-01-22 | 2018-01-22 | ウエーハの生成方法およびウエーハの生成装置 |
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JP7046617B2 JP7046617B2 (ja) | 2022-04-04 |
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US (1) | US20190228980A1 (ja) |
JP (1) | JP7046617B2 (ja) |
KR (1) | KR102570139B1 (ja) |
CN (1) | CN110071034B (ja) |
DE (1) | DE102019200729A1 (ja) |
MY (1) | MY202343A (ja) |
SG (1) | SG10201900165XA (ja) |
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JP2020188117A (ja) * | 2019-05-14 | 2020-11-19 | 株式会社ディスコ | ウェーハの製造方法、及びインゴットの分断装置 |
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JP7123583B2 (ja) * | 2018-03-14 | 2022-08-23 | 株式会社ディスコ | ウエーハの生成方法およびウエーハの生成装置 |
JP7442332B2 (ja) * | 2020-02-07 | 2024-03-04 | 株式会社ディスコ | ウエーハの生成方法 |
CN111986986B (zh) * | 2020-08-24 | 2024-05-03 | 松山湖材料实验室 | 一种晶圆的剥离方法及剥离装置 |
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DE102019200729A1 (de) | 2019-07-25 |
CN110071034A (zh) | 2019-07-30 |
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CN110071034B (zh) | 2024-03-19 |
MY202343A (en) | 2024-04-24 |
KR102570139B1 (ko) | 2023-08-23 |
US20190228980A1 (en) | 2019-07-25 |
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