JP6400620B2 - 半導体製造装置の制御装置および制御方法 - Google Patents
半導体製造装置の制御装置および制御方法 Download PDFInfo
- Publication number
- JP6400620B2 JP6400620B2 JP2016048663A JP2016048663A JP6400620B2 JP 6400620 B2 JP6400620 B2 JP 6400620B2 JP 2016048663 A JP2016048663 A JP 2016048663A JP 2016048663 A JP2016048663 A JP 2016048663A JP 6400620 B2 JP6400620 B2 JP 6400620B2
- Authority
- JP
- Japan
- Prior art keywords
- sound
- polishing
- unit
- frequency band
- change
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 29
- 238000000034 method Methods 0.000 title claims description 29
- 230000008859 change Effects 0.000 claims description 69
- 238000001228 spectrum Methods 0.000 claims description 61
- 238000012545 processing Methods 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 24
- 238000004364 calculation method Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 description 189
- 235000012431 wafers Nutrition 0.000 description 78
- 238000001514 detection method Methods 0.000 description 27
- 230000007704 transition Effects 0.000 description 13
- 230000008569 process Effects 0.000 description 12
- 238000000605 extraction Methods 0.000 description 10
- 238000004458 analytical method Methods 0.000 description 7
- 239000002002 slurry Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000005259 measurement Methods 0.000 description 5
- 238000012544 monitoring process Methods 0.000 description 5
- 239000000284 extract Substances 0.000 description 3
- 238000009499 grossing Methods 0.000 description 3
- 238000012935 Averaging Methods 0.000 description 2
- 230000003111 delayed effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000003909 pattern recognition Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
図1は、第1実施形態の半導体製造システムの構成を模式的に示す断面図である。
図5は、第2実施形態の半導体製造システムの構成を模式的に示す断面図である。
図8は、第3実施形態の終点検知方法を説明するためのグラフである。第3実施形態の終点検知方法は、図1の半導体製造システム内の制御装置2により実行される。
11:ウェハ、12:研磨パッド、13:研磨ヘッド、
14:駆動部、15:研磨テーブル、16:回転部、
17:スラリ供給部、18:音響センサ、19:校正用スピーカ、
21:音収集部、22:特徴抽出部、23:終点判定部、
24:出力部、25:周波数帯域判断部、26:記録部、
31:校正部、32:装置状態判断部、33:入出力部、
41:特徴周波数帯域抽出部、42:監視周波数帯域変更部
Claims (8)
- 半導体製造装置による基板の加工音を収集する音収集部と、
前記加工音のパワースペクトルの変化量を算出し、第1の周波数帯域における前記変化量に基づいて第1の値を算出し、第2の周波数帯域における前記変化量に基づいて第2の値を算出し、前記第1および第2の値に基づいて前記加工音のS/N比(信号雑音比)を算出する変化量算出部と、
前記S/N比に基づいて、前記基板の加工の変化点を判定する変化点判定部と、
を備える半導体製造装置の制御装置。 - 前記第1の値は、前記第1の周波数帯域における前記変化量の平均値であり、
前記第2の値は、前記第2の周波数帯域における前記変化量の平均値である、
請求項1に記載の半導体製造装置の制御装置。 - 前記変化量算出部は、前記基板に関する情報に基づいて、前記第1および第2の周波数帯域を変更する、請求項1または2に記載の半導体製造装置の制御装置。
- 半導体製造装置による基板の加工音を収集する音収集部と、
前記加工音のパワースペクトルの変化量を算出する変化量算出部と、
所定の周波数帯域における前記変化量に基づいて、前記基板の加工の変化点を判定する変化点判定部と、
第1の基板の加工時に収集された前記加工音の前記パワースペクトルと時間との関係を示す第1の画像データを生成する画像生成部と、
前記第1の画像データと、前記変化点における前記パワースペクトルと時間との関係を示す第2の画像データとを照合して、前記所定の周波数帯域の設定を決定する画像照合部と、
第2の基板の加工時に、前記所定の周波数帯域を前記設定に応じて変更する変更部と、
を備える半導体製造装置の制御装置。 - 前記音収集部は、音響センサから、前記加工音と、前記音響センサの校正用の基準音とを収集し、
さらに、
収集された前記基準音を利用して、前記基準音の周波数の測定値を取得する取得部と、
前記基準音の周波数の設定値を記録部から読み出す読出部と、
前記基準音の周波数の測定値と、前記基準音の周波数の設定値とに基づいて、前記音響センサを校正する校正部と、
を備える請求項1から4のいずれか1項に記載の半導体製造装置の制御装置。 - さらに、前記変化点判定部により前記変化点が検知された場合に、前記基板の加工を終了するように前記半導体製造装置を制御する終了制御部を備える、請求項1から5のいずれか1項に記載の半導体製造装置の制御装置。
- 半導体製造装置による基板の加工音を収集し、
前記加工音のパワースペクトルの変化量を算出し、第1の周波数帯域における前記変化量に基づいて第1の値を算出し、第2の周波数帯域における前記変化量に基づいて第2の値を算出し、前記第1および第2の値に基づいて前記加工音のS/N比(信号雑音比)を算出し、
前記S/N比に基づいて、前記基板の加工の変化点を判定する、
ことを含む半導体製造装置の制御方法。 - 半導体製造装置による基板の加工音を収集し、
前記加工音のパワースペクトルの変化量を算出し、
所定の周波数帯域における前記変化量に基づいて、前記基板の加工の変化点を判定し、
第1の基板の加工時に収集された前記加工音の前記パワースペクトルと時間との関係を示す第1の画像データを生成し、
前記第1の画像データと、前記変化点における前記パワースペクトルと時間との関係を示す第2の画像データとを照合して、前記所定の周波数帯域の設定を決定し、
第2の基板の加工時に、前記所定の周波数帯域を前記設定に応じて変更する、
ことを含む半導体製造装置の制御方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016048663A JP6400620B2 (ja) | 2016-03-11 | 2016-03-11 | 半導体製造装置の制御装置および制御方法 |
US15/252,894 US10553507B2 (en) | 2016-03-11 | 2016-08-31 | Control device and control method of semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016048663A JP6400620B2 (ja) | 2016-03-11 | 2016-03-11 | 半導体製造装置の制御装置および制御方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017163100A JP2017163100A (ja) | 2017-09-14 |
JP6400620B2 true JP6400620B2 (ja) | 2018-10-03 |
Family
ID=59788711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016048663A Active JP6400620B2 (ja) | 2016-03-11 | 2016-03-11 | 半導体製造装置の制御装置および制御方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US10553507B2 (ja) |
JP (1) | JP6400620B2 (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6437608B1 (ja) * | 2017-09-08 | 2018-12-12 | 東芝メモリ株式会社 | 研磨装置、研磨方法、および研磨制御装置 |
US11565365B2 (en) * | 2017-11-13 | 2023-01-31 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for monitoring chemical mechanical polishing |
JP7046617B2 (ja) * | 2018-01-22 | 2022-04-04 | 株式会社ディスコ | ウエーハの生成方法およびウエーハの生成装置 |
JP7105882B2 (ja) * | 2018-06-21 | 2022-07-25 | 株式会社Fuji | 制御パラメータ調整システム及び制御パラメータ調整方法 |
JP2021144972A (ja) | 2020-03-10 | 2021-09-24 | キオクシア株式会社 | 半導体製造装置 |
JP7504713B2 (ja) | 2020-08-19 | 2024-06-24 | キオクシア株式会社 | 半導体製造装置及び半導体製造方法 |
JP2022127882A (ja) | 2021-02-22 | 2022-09-01 | 株式会社荏原製作所 | 基板処理装置 |
JP2022127883A (ja) * | 2021-02-22 | 2022-09-01 | キオクシア株式会社 | 基板処理の制御方法 |
JP2023092579A (ja) | 2021-12-22 | 2023-07-04 | 株式会社荏原製作所 | 音響センサの較正方法 |
US20230390884A1 (en) * | 2022-06-03 | 2023-12-07 | Applied Materials, Inc. | Determining substrate orientation with acoustic signals |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6091000A (en) * | 1991-03-15 | 2000-07-18 | Duke University | SCID mouse engrafted with human synovium tissue |
JP3198525B2 (ja) | 1991-03-28 | 2001-08-13 | ソニー株式会社 | ポリッシュ装置、ポリッシュ方法、及び半導体装置の製造方法 |
US5271274A (en) * | 1991-08-14 | 1993-12-21 | The Board Of Trustees Of The Leland Stanford Junior University | Thin film process monitoring techniques using acoustic waves |
JPH06320416A (ja) * | 1993-03-15 | 1994-11-22 | Toshiba Corp | 研磨方法及び研磨装置 |
JPH1190818A (ja) * | 1997-09-12 | 1999-04-06 | Fujitsu Ltd | 研磨装置及び研磨方法 |
JP3466374B2 (ja) * | 1995-04-26 | 2003-11-10 | 富士通株式会社 | 研磨装置及び研磨方法 |
JP4086926B2 (ja) | 1997-01-29 | 2008-05-14 | 富士通株式会社 | 半導体装置及びその製造方法 |
JP3292243B2 (ja) * | 1999-06-30 | 2002-06-17 | 日本電気株式会社 | 研磨終点検出装置 |
US6564116B2 (en) * | 2001-04-06 | 2003-05-13 | Gou-Jen Wang | Method for determining efficiently parameters in chemical-mechanical polishing (CMP) |
JP2003037090A (ja) * | 2001-07-24 | 2003-02-07 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
US6431953B1 (en) * | 2001-08-21 | 2002-08-13 | Cabot Microelectronics Corporation | CMP process involving frequency analysis-based monitoring |
JP2003086551A (ja) | 2001-09-07 | 2003-03-20 | Mitsubishi Electric Corp | 半導体研磨装置、半導体研磨の終点検出方法および研磨ヘッドのドレスの終点検出方法 |
JP2004363229A (ja) | 2003-06-03 | 2004-12-24 | Matsushita Electric Ind Co Ltd | 半導体ウェハの研磨装置および研磨方法 |
JP5533884B2 (ja) * | 2009-12-01 | 2014-06-25 | 株式会社Sumco | ウェーハの研磨方法 |
JP2013221755A (ja) | 2012-04-12 | 2013-10-28 | Ngk Spark Plug Co Ltd | 超音波センサ及びその校正方法 |
JP6085247B2 (ja) * | 2013-11-11 | 2017-02-22 | 三菱重工業株式会社 | 集音センサ診断装置、集音センサ診断システム、集音センサ診断方法及びプログラム |
US9878421B2 (en) | 2014-06-16 | 2018-01-30 | Applied Materials, Inc. | Chemical mechanical polishing retaining ring with integrated sensor |
US10478937B2 (en) * | 2015-03-05 | 2019-11-19 | Applied Materials, Inc. | Acoustic emission monitoring and endpoint for chemical mechanical polishing |
-
2016
- 2016-03-11 JP JP2016048663A patent/JP6400620B2/ja active Active
- 2016-08-31 US US15/252,894 patent/US10553507B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20170263512A1 (en) | 2017-09-14 |
US10553507B2 (en) | 2020-02-04 |
JP2017163100A (ja) | 2017-09-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6400620B2 (ja) | 半導体製造装置の制御装置および制御方法 | |
US8636559B2 (en) | Method for wafer back-grinding control | |
US8065031B2 (en) | Polishing end point detection method utilizing torque change and device thereof | |
JP2020518131A (ja) | モニタリング用のニューラルネットワークを用いた研磨装置 | |
JP2009028856A (ja) | トルク変化を利用した研磨終端時点検知方法及びその装置 | |
US20230360919A1 (en) | Wafer thinning method having feedback control | |
US11110565B2 (en) | Polishing apparatus, polishing method, and polishing control apparatus | |
KR20220116313A (ko) | 인접한 전도성 층들의 적층체의 연마 동안의 프로파일 제어 | |
WO2011109545A2 (en) | Systems and methods for wafer edge feature detection and quantification | |
JP5057892B2 (ja) | トルク変化を利用した研磨終端時点検知方法及びその装置 | |
US8394719B2 (en) | System and method for implementing multi-resolution advanced process control | |
WO2019130757A1 (ja) | ワークの両面研磨装置および両面研磨方法 | |
JP3824407B2 (ja) | プロセスの終点検出方法,終点検出装置及び記録媒体、並びに化学的機械研磨装置 | |
JP5274105B2 (ja) | 研磨終点検出方法 | |
CN1253853C (zh) | 生产磁换能器的方法 | |
JP2020049612A (ja) | ワークの両面研磨装置および両面研磨方法 | |
US20170368661A1 (en) | Polishing apparatus, polishing method and polishing control program | |
JP2953387B2 (ja) | ウェハの研磨装置及びウェハの研磨方法 | |
US11633828B2 (en) | Substrate polishing system, substrate polishing method and substrate polishing apparatus | |
US10704952B2 (en) | System and method for measuring vibration on a machine | |
US11769699B2 (en) | Semiconductor manufacturing apparatus and semiconductor manufacturing method | |
JP5798447B2 (ja) | ファーストコンタクト検出システム及び研磨装置 | |
JP2008130776A (ja) | 処理の終点検出方法及び処理の終点検出装置 | |
JP2008071973A (ja) | 研磨終端検出方法 | |
KR101655070B1 (ko) | 화학 기계적 연마 장치 및 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20180131 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20180206 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180621 |
|
A975 | Report on accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A971005 Effective date: 20180621 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20180626 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180723 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180807 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180905 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6400620 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |