JP2019099878A - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP2019099878A JP2019099878A JP2017233438A JP2017233438A JP2019099878A JP 2019099878 A JP2019099878 A JP 2019099878A JP 2017233438 A JP2017233438 A JP 2017233438A JP 2017233438 A JP2017233438 A JP 2017233438A JP 2019099878 A JP2019099878 A JP 2019099878A
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5846—Reactive treatment
- C23C14/5853—Oxidation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
Description
Claims (4)
- 内部空間を提供するチャンバと、
その上に円盤形状を有する基板を載置可能な載置領域を有し、前記内部空間の中に配置された支持台と、
下方に向けて開口した複数のガス出力孔を提供する管を有し、前記支持台の上方の第1領域内に配置されているときに、前記載置領域を覆うように構成されたシャッターと、
前記シャッターを支持する回転軸であり、前記支持台から離れており、鉛直方向に延在する、該回転軸と、
前記回転軸をその中心軸線の周りで回転させて、前記第1領域と前記支持台から離れた第2領域との間で前記シャッターを移動させるように構成された駆動装置と、
を備え、
前記複数のガス出力孔は、前記シャッター内の基準点と前記中心軸線を含む基準平面に対して、前記第2領域から前記第1領域に向かう回転方向の側に設けられており、
前記基準点は、前記第1領域内に前記シャッターが配置されているときに、前記載置領域の中心に対面し、
前記複数のガス出力孔の開口端は、前記回転方向に突出する曲線、又は、該回転方向に突出する折れ線上で配列されており、
前記基準点を含み鉛直方向に延びる基準線と前記複数のガス出力孔の各々との間の距離は、前記載置領域の半径よりも大きく、
前記中心軸線と前記複数のガス出力孔との間の最小距離は、前記中心軸線と前記載置領域との間の最小距離以下であり、
前記中心軸線と前記複数のガス出力孔との間の最大距離は、前記中心軸線と前記載置領域との間の最大距離以上である、
基板処理装置。 - 前記管は、円弧に沿って延びる管であり、
前記複数のガス出力孔の開口端は、前記基準線をその曲率中心として有する円弧上で配列されている、
請求項1に記載の基板処理装置。 - 前記管は、そこから該管の中にガスが導入される入口を、前記複数のガス出力孔に対して前記中心軸線の側に提供しており、
前記複数のガス出力孔のうち任意の二つの隣り合うガス出力孔である二つの第1のガス出力孔の間の所定方向における距離は、前記複数のガス出力孔のうち前記二つの第1のガス出力孔よりも前記管内で前記入口に近い任意の二つの隣り合うガス出力孔である第2のガス出力孔の間の前記所定方向における距離よりも小さく、前記所定方向は、前記基準平面に平行であり且つ前記中心軸線に直交する方向である、
請求項2に記載の基板処理装置。 - 前記支持台及び前記第1領域の上方でターゲットを保持するホルダと、
前記ホルダに電圧を印加する電源と、
を更に備える、請求項1〜3の何れか一項に記載の基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017233438A JP6955983B2 (ja) | 2017-12-05 | 2017-12-05 | 基板処理装置 |
TW107141598A TW201929120A (zh) | 2017-12-05 | 2018-11-22 | 基板處理裝置 |
US16/208,391 US10748750B2 (en) | 2017-12-05 | 2018-12-03 | Substrate processing apparatus |
CN201811474092.1A CN110029321B (zh) | 2017-12-05 | 2018-12-04 | 基板处理装置 |
KR1020180154892A KR102206900B1 (ko) | 2017-12-05 | 2018-12-05 | 기판 처리 장치 |
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JP2017233438A JP6955983B2 (ja) | 2017-12-05 | 2017-12-05 | 基板処理装置 |
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JP2019099878A true JP2019099878A (ja) | 2019-06-24 |
JP6955983B2 JP6955983B2 (ja) | 2021-10-27 |
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JP2017233438A Active JP6955983B2 (ja) | 2017-12-05 | 2017-12-05 | 基板処理装置 |
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US (1) | US10748750B2 (ja) |
JP (1) | JP6955983B2 (ja) |
KR (1) | KR102206900B1 (ja) |
CN (1) | CN110029321B (ja) |
TW (1) | TW201929120A (ja) |
Cited By (1)
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KR20220073184A (ko) * | 2020-11-26 | 2022-06-03 | 한국과학기술연구원 | 물리적 기상증착 장치용 기판 홀더 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006120270A (ja) * | 2004-10-25 | 2006-05-11 | Hitachi Global Storage Technologies Netherlands Bv | 垂直磁気記録媒体及びその製造方法 |
JP2013249517A (ja) * | 2012-05-31 | 2013-12-12 | Tokyo Electron Ltd | 真空処理装置、真空処理方法及び記憶媒体 |
WO2015064194A1 (ja) * | 2013-10-30 | 2015-05-07 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
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JP2003077808A (ja) * | 2001-09-04 | 2003-03-14 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
JP3718647B2 (ja) * | 2001-10-19 | 2005-11-24 | 東京エレクトロン株式会社 | 現像装置及び現像方法 |
JP4292777B2 (ja) | 2002-06-17 | 2009-07-08 | ソニー株式会社 | 薄膜形成装置 |
JP3920897B2 (ja) * | 2005-07-25 | 2007-05-30 | 東京エレクトロン株式会社 | 現像装置及び現像方法 |
KR101324207B1 (ko) | 2006-10-19 | 2013-11-06 | 주성엔지니어링(주) | 가스 분사 장치 및 이를 포함하는 기판 처리 장치 |
JP6305864B2 (ja) * | 2014-07-31 | 2018-04-04 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
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- 2017-12-05 JP JP2017233438A patent/JP6955983B2/ja active Active
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2018
- 2018-11-22 TW TW107141598A patent/TW201929120A/zh unknown
- 2018-12-03 US US16/208,391 patent/US10748750B2/en active Active
- 2018-12-04 CN CN201811474092.1A patent/CN110029321B/zh active Active
- 2018-12-05 KR KR1020180154892A patent/KR102206900B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006120270A (ja) * | 2004-10-25 | 2006-05-11 | Hitachi Global Storage Technologies Netherlands Bv | 垂直磁気記録媒体及びその製造方法 |
JP2013249517A (ja) * | 2012-05-31 | 2013-12-12 | Tokyo Electron Ltd | 真空処理装置、真空処理方法及び記憶媒体 |
WO2015064194A1 (ja) * | 2013-10-30 | 2015-05-07 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20220073184A (ko) * | 2020-11-26 | 2022-06-03 | 한국과학기술연구원 | 물리적 기상증착 장치용 기판 홀더 |
KR102555324B1 (ko) * | 2020-11-26 | 2023-07-17 | 한국과학기술연구원 | 물리적 기상증착 장치용 기판 홀더 |
Also Published As
Publication number | Publication date |
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TW201929120A (zh) | 2019-07-16 |
KR102206900B1 (ko) | 2021-01-22 |
CN110029321B (zh) | 2021-03-16 |
CN110029321A (zh) | 2019-07-19 |
JP6955983B2 (ja) | 2021-10-27 |
KR20190066594A (ko) | 2019-06-13 |
US20190172690A1 (en) | 2019-06-06 |
US10748750B2 (en) | 2020-08-18 |
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