US11851750B2 - Apparatus and method for performing sputtering process - Google Patents
Apparatus and method for performing sputtering process Download PDFInfo
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- US11851750B2 US11851750B2 US17/384,058 US202117384058A US11851750B2 US 11851750 B2 US11851750 B2 US 11851750B2 US 202117384058 A US202117384058 A US 202117384058A US 11851750 B2 US11851750 B2 US 11851750B2
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- 238000000034 method Methods 0.000 title claims abstract description 32
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- 238000010438 heat treatment Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- SHMWNGFNWYELHA-UHFFFAOYSA-N iridium manganese Chemical compound [Mn].[Ir] SHMWNGFNWYELHA-UHFFFAOYSA-N 0.000 description 2
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- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 229910001313 Cobalt-iron alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
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- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- IGOJMROYPFZEOR-UHFFFAOYSA-N manganese platinum Chemical compound [Mn].[Pt] IGOJMROYPFZEOR-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 229910052682 stishovite Inorganic materials 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/354—Introduction of auxiliary energy into the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
- C23C14/044—Coating on selected surface areas, e.g. using masks using masks using masks to redistribute rather than totally prevent coating, e.g. producing thickness gradient
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/30—Collimators
Definitions
- the present disclosure relates to an apparatus and method for performing a sputtering process.
- a magnetron sputtering device is used for forming a metal film.
- This apparatus is configured such that a target made of a film forming material is disposed in a vacuum processing chamber, a magnetic field and an electric field are formed to generate plasma, and the target is sputtered by ions of the plasma.
- Japanese Patent Application Publication No. 2016-33266 discloses a sputtering apparatus, in which a first shielding portion and a second shielding portion are disposed between a substrate and a target obliquely facing the substrate, the first and second shielding portions are moved to adjust a size of an opening portion above the substrate, and a portion of the target can be covered by using a third shielding portion.
- Japanese Patent Application Publication No. 2017-166056 discloses a sputtering apparatus, in which a target is disposed to face a substrate and a collimator having a plurality of through holes is provided between the target and the substrate so as to cover the entire surface of the substrate.
- the present disclosure provides a technique capable of limiting an incident angle at which target particles are incident on a substrate and controlling the directivity of the target particles.
- an apparatus for performing a sputtering process on a substrate including: a processing chamber configured to accommodate a substrate and having a substrate support on which the substrate is placed; a target, having a surface disposed to face the substrate placed on the substrate support, for emitting target particles to be adhered to the substrate by plasma formed in the processing chamber; a magnet, provided on a rear surface of the target when viewed from the substrate support side, for adjusting a state of the plasma on the surface of the target;
- a magnet moving mechanism for repeatedly moving the magnet between a position on one side and a position on the other side set across a central portion on the rear surface of the target; and a collimator provided between the substrate support and the target, wherein the collimator includes two regulating plates, disposed apart from each other and facing each other, for limiting an incident angle at which the target particles emitted from the target are incident on the substrate placed on the substrate support, and an arrangement position adjustment mechanism for adjusting positions at which the two regulating plates are disposed according to the movement of the magnet.
- FIG. 1 is a vertical sectional side view illustrating a sputtering apparatus according to a first embodiment
- FIG. 2 is an enlarged plan view illustrating a portion of the sputtering apparatus according to the first embodiment
- FIG. 3 is a schematic perspective view illustrating a portion of the sputtering apparatus according to the first embodiment
- FIG. 4 is a vertical sectional side view for describing the operation of the sputtering apparatus
- FIGS. 5 A through 5 C are plan views for describing the operation of a sputtering apparatus according to a comparative embodiment
- FIG. 6 is a plan view for describing the operation of the sputtering apparatus according to the comparative embodiment
- FIGS. 7 A through 7 C are plan views for describing the operation of the sputtering apparatus according to the first embodiment
- FIG. 8 is a schematic perspective view illustrating a portion of a sputtering apparatus according to a second embodiment.
- FIGS. 9 A through 7 C are plan views for describing the operation of the sputtering apparatus according to the second embodiment.
- FIG. 1 is a schematic cross-sectional view illustrating a configuration example of the sputtering apparatus
- FIG. 2 is a plan view illustrating a portion of the sputtering apparatus.
- the sputtering apparatus 1 of this example is configured as an apparatus that performs a sputtering process for forming, for example, a metal film on the surface of a semiconductor wafer (hereinafter, referred to as “wafer”) 10 which is a substrate.
- the reference numeral 11 refers to a processing chamber made of, for example, aluminum (Al) and grounded.
- the processing chamber 11 includes a main body 12 which is a substantially cylindrical chamber having an opening on its upper surface, and a cover 13 which closes the opening of the main body 12 .
- the processing chamber 11 is connected to a vacuum pump 15 which is a vacuum exhaust mechanism via an exhaust passage 14 and is also connected to a source (not illustrated) supplying an inert gas, such as Ar gas, via a supply port 16 .
- the reference numeral 17 in FIG. 1 refers to a transfer port of a wafer 10 which is formed on a side wall 121 of the main body 12 and configured to be openable and closable by a gate valve 18 .
- a substrate support 2 on which the wafer 10 is placed in a horizontal state is provided inside the processing chamber 11 , and the substrate support 2 can hold the wafer 10 by a substrate support moving mechanism 21 and move the wafer 10 in a lateral direction.
- the substrate support moving mechanism 21 of this example moves the substrate support 2 in the lateral direction (X direction in FIG. 1 ) along a base 22 and moves the base 22 in a vertical direction (Z direction in FIG. 1 ) by a raising/lowering mechanism 23 .
- a sealing mechanism (not illustrated) for maintaining an internal space of the processing chamber 11 airtight is provided at a position where the raising/lowering mechanism 23 passes through a bottom surface 122 of the main body 12 .
- the substrate support 2 includes a heating mechanism for heating the wafer 10 and a push-up pin for transferring the wafer 10 between an external transport arm (not illustrated) and the substrate support 2 .
- the wafer 10 on the substrate support 2 moves laterally from a first position to a second position at the time of film formation.
- the first position is a position where the left end of the wafer 10 is disposed below and aligned with the left end of a slit 44 described below, as illustrated by the solid lines in FIG. 1 .
- the second position is a position where the wafer 10 moves to the left from the first position and the right end of the wafer 10 is disposed below and aligned with the right end of the slit 44 , as illustrated by the broken lines in FIG. 1 .
- an external transport arm (not illustrated) is introduced by the operation of the raising/lowering mechanism 23 described above, and the wafer 10 on the substrate support 2 is vertically raised or lowered between a height position when the wafer 10 is transferred between the substrate support 2 and the transport arm and a height position at the time of the film formation.
- a configuration of the substrate support moving mechanism 21 is not limited to that illustrated in FIG. 1 and may have any configuration as long as a horizontal moving mechanism for laterally moving the substrate support 2 holding the wafer 10 is included.
- the horizontal movement mechanism may have a configuration in which a substrate support is screwed into the ball screw and the ball screw is rotationally driven by a drive motor.
- the horizontal movement mechanism may have a configuration in which the substrate support is fixed to a moving body that slides on a rail and a drive mechanism for sliding the moving body is provided.
- the horizontal movement mechanism may have various configurations such as a configuration in which the substrate support is connected to a timing belt of a pulley belt mechanism, the timing belt is rotated by a drive motor, and the connection portion of the substrate support is horizontally moved.
- the raising/lowering mechanism 23 may adopt a configuration in which a vertical raising/lowering shaft is rotationally driven by a drive motor to move in a vertical direction.
- the cover 13 of this example faces the bottom surface 122 of the processing chamber 11 and includes a disk-shaped ceiling portion 131 .
- a diameter of the ceiling portion 131 is set to be smaller than a diameter of the bottom surface 122 of the circular tray-shaped main body 12 .
- the center of the ceiling portion 131 and the center of the bottom surface 122 are aligned, and the outer edge of the ceiling portion 131 and the upper edge of the side wall 121 of the main body 12 are connected via a tapered side wall 132 of the cover 13 .
- openings 133 and 134 are formed at two opposing positions in a plan view, and target electrodes 3 ( 3 A and 3 B) are formed to close the openings 133 and 134 .
- Each target electrode 3 is formed by joining a conductive base plate 32 made of, for example, copper (Cu) or aluminum (Al) to the upper surface of a target 31 .
- the target 31 emits target particles to be adhered to the wafer 10 by the plasma in the processing chamber 11 .
- the target 31 is made of Ti (titanium), Si (silicon), Zr (zirconium), Hf (hafnium), tungsten (W), a cobalt-iron-boron alloy, a cobalt-iron alloy, iron (Fe), tantalum (Ta), ruthenium (Ru), magnesium (Mg), iridium manganese (IrMn), platinum manganese (PtMn), or the like.
- the target 31 may be made of an insulator, such as SiO2, besides the metal.
- the target 31 and the base plate 32 are each formed in a rectangular shape in a plan view.
- the target 31 is disposed along the tapered surface of the side wall 132 so that a long side 311 of the rectangle is directed to a horizontal direction.
- the center O 1 of the wafer 10 held on the substrate support 2 and the center O 2 of the long side 311 of the target 31 are aligned with each other in a front-rear direction (Y direction in FIG. 2 ).
- each of the target electrodes 3 A and 3 B is disposed so that a surface of the target 31 faces the wafer 10 and is inclined diagonally upward in the lateral direction (X direction in FIG. 1 ) of the wafer 10 .
- the lateral direction will be referred to as the X direction
- the front-rear direction will be referred to as the Y direction.
- the length of the long side 311 of the target 31 is set to be larger than the diameter of the wafer 10 as illustrated in FIG. 2 .
- the base plate 32 is formed to be the same as or larger than the target 31 and is provided on the cover 13 with, for example, an annular insulating member 33 is interposed therebetween (see FIG. 1 ).
- the target electrodes 3 A and 3 B are fixed to the processing chamber 11 in a state of being electrically insulated from the processing chamber 11 , and a direct current (DC) voltage is applied to the target electrodes 3 A and 3 B by a power supply unit 34 .
- An alternating current (AC) voltage may be applied instead of the DC voltage.
- a shield member 4 is provided inside the processing chamber 11 .
- the shield member 4 is provided to suppress the adhesion of sputtered particles to the inner walls of the processing chamber 11 and is made of, for example, a conductor such as aluminum or an alloy using aluminum as a base material.
- the shield member 4 includes first, second and third shield members 41 , 42 , and 43 .
- the first shield member 41 is provided to cover an inner side of the cover 13 , openings 411 and 412 are formed in regions corresponding to the targets 31 , and the lower surface of each target 31 is exposed inside the processing chamber 11 .
- the second shield member 42 forms a shielding plate and is provided between the substrate support 2 and regulating plates 61 and 62 described below so as to face the bottom surface 122 of the main body 12 .
- a slit 44 which is an opening for exposing a portion of the wafer 10 mounted on the substrate support 2 , is formed at the center of the second shield member 42 .
- the slit 44 is an opening through which the target particles pass and, as illustrated in FIG. 2 , is formed in, for example, a substantially rectangular shape in a plan view so that its long side 441 extends in the Y direction and its short side 442 extends in the X direction. That is, the slit 44 is formed in a rectangular shape the long side of which extends in moving directions of magnets 51 and 52 , as will be described below.
- the center O 3 of the slit 44 is disposed to be aligned with the center of the bottom surface 122 of the main body 12 when viewed from above.
- the slit 44 is formed so that the length of its long side 441 is larger than the diameter of the wafer 10 and the length of its short side 442 is smaller than the diameter of the wafer 10 .
- the wafer 10 held by the substrate support 2 moves below the slit 44 while, for example, a positional relationship between the slit 44 and the wafer 10 is set so that the center O 1 of the wafer 10 passes below the center O 3 of the slit 44 .
- the first position and the second position are determined according to the shape of the slit 44 such that the entire surface of the wafer 10 passes below the slit 44 by moving the wafer 10 on the substrate support 2 from the first position to the second position.
- the third shield member 43 is provided to face the second shield member 42 below the substrate support 2 and not hinder the transfer of the wafer 10 between the substrate support 2 and the external transport arm.
- the first to third shield members 41 to 43 are connected to, for example, inner walls of the processing chamber 11 , and are grounded via the processing chamber 11 .
- the configuration illustrated in FIGS. 1 and 2 is exemplary, and the configuration of the shield member 4 may be set in any appropriate manner.
- FIG. 2 schematically illustrates an arrangement of the magnet unit 5 A, the slit 44 , and the wafer 10 on the substrate support 2 with respect to the magnet unit 5 A provided on a right side of the sputtering apparatus 1 in FIG. 1 .
- the first and second shield members 41 and 42 are collectively shown, and a description of the base plate 32 is omitted.
- the magnet unit 5 A includes, for example, the magnets 51 and 52 which are two permanent magnets and a magnet moving mechanism 53 for moving the magnets 51 and 52 in the Y direction.
- the magnets 51 and 52 have a function of adjusting a state of plasma on the surface of the target 31 .
- the two magnets 51 and 52 are formed in the same manner, and the outer shape thereof is formed as, for example, a substantially rectangular parallelepiped shape when viewed in a plan view.
- Each of the magnets 51 and 52 is configured by combining a plurality of magnet elements constituting a magnetic circuit.
- each of the magnets 51 and 52 is configured by a combination of four magnet elements provided along four sides of its outer shape and one magnet element provided at its center and spaced apart from the four magnet elements.
- the polarity of the magnet elements provided along the four sides on the target 31 is different from the polarity of the magnet element provided at the center on the target 31 .
- this example is one of the configuration examples of the magnets 51 and 52 and is not limited to this configuration.
- the magnets 51 and 52 have long sides 511 and 521 extending in the X direction and short sides 512 and 522 extending in the Y direction, and are spaced apart from each other in the Y direction. Further, an area of regions where the magnets 51 and 52 are disposed is set to be smaller than an area of the target 31 when viewed from the substrate support 2 .
- the magnet moving mechanism 53 is configured to repeatedly move the magnets 51 and 52 between a position on one side and a position on the other side set across a central portion on the rear surface of the target 31 .
- the position on the one side is referred to as one end of the target 31 in the Y direction
- the position on the other side is referred to as the other end of the target 31 in the Y direction.
- the magnet moving mechanism 53 includes a ball screw mechanism, a ball screw 54 is disposed to extend above the target 31 in the Y direction, and the ball screw 54 is screwed into screw holes passing through each of the magnets 51 and 52 .
- the ball screw 54 is set to a length that covers moving regions of the magnets 51 and 52 , and one end and the other end of the ball screw 54 are rotatably supported by bearing portions 551 and 552 .
- a drive motor 56 forming a drive mechanism is connected to the other end side of the ball screw 54 via the bearing portion 552 .
- the reference numeral 57 is a rod-shaped guide member, which is provided to extend in the Y direction over the target 31 in parallel to the ball screw 54 , and one end and the other end of the guide member 57 are respectively supported by bearing portions 581 and 582 .
- the ball screw 54 is attached at a position closer to the substrate support 2 than to the centers of the magnets 51 and 52
- the guide member 57 is provided at a position closer to the side wall 121 than to the center.
- the two magnets 51 and 52 being separated from each other with a pre-set separation gap in the Y direction, are attached to the ball screw 54 and the guide member 57 . Then, the magnets 51 and 52 , maintaining the separation gap therebetween, move back and forth between one end and the other end of the target 31 in the Y direction by the forward and backward rotation of the ball screw 54 by using the drive motor 56 .
- the bearing portions 551 , 552 , 581 , and 582 and the drive motor 56 are attached to, for example, the cover 13 .
- collimators 6 ( 6 A and 6 B) are respectively provided between the targets 31 and the slits 44 .
- the collimators 6 A and 6 B are configured in the same manner, and, here, with reference to FIGS. 1 , 2 and 3 , an example of the collimator 6 A provided on the right side of the sputtering apparatus in FIG. 1 will be described.
- the collimator 6 A includes two regulating plates 61 and 62 spaced apart from and facing each other, and also has an arrangement position adjustment mechanism for adjusting positions at which the regulating plates 61 and 62 are disposed according to the movement of the magnets 51 and 52 .
- the regulating plates 61 and 62 are each formed in the same shape, and are formed in an elongated rectangular plate-like body when viewed from the front, for example.
- each of plate surfaces 610 and 620 is orthogonal to the Y direction along which the regulating plates 61 and 62 move, long sides 611 and 621 thereof extend in the Z direction, and short sides 612 and 622 thereof extend in the X direction.
- the regulating plates 61 and 62 are disposed so that their plate surfaces 610 and 620 are spaced apart from and face each other in the Y direction.
- dimensions of the regulating plates 61 and 62 in the X and Y directions are set to be smaller than dimensions of the magnets 51 and 52 in the X and Y directions when viewed from above. Further, when viewed from above, for example, the center position O 4 between the regulating plates 61 and 62 and the center position O 5 between the magnets 51 and 52 are disposed to be aligned with each other in the Y direction.
- the arrangement position adjustment mechanism of this example is configured as a regulating plate movement mechanism 63 for moving the regulating plates 61 and 62 following the movement of the magnets 51 and 52 .
- the regulating plate movement mechanism 63 includes, for example, a ball screw mechanism, a ball screw 64 is disposed in the Y direction, which is the moving direction, and the ball screw 64 is screwed into the screw holes formed on an upper end of each of the regulating plates 61 and 62 .
- One end and the other end of the ball screw 64 are rotatably supported by bearing portions 651 and 652 , and a drive motor 66 forming a drive mechanism is connected to the other end of the ball screw 64 via the bearing portion 652 .
- the regulating plates 61 and 62 are configured to move back and forth between one end and the other end of the target 31 in the Y direction by the forward and backward rotation of the ball screw 64 by using the drive motor 66 .
- the ball screw 64 has a length that covers moving regions of the regulating plates 61 and 62 , and the bearing portions 651 and 652 and the drive motor 66 are attached to, for example, the first shield member 41 .
- the magnets 51 and 52 move in the Y direction, and the positions where the regulating plates 61 and 62 are disposed are adjusted according to the movement of the magnets 51 and 52 . Therefore, even when the magnets 51 and 52 move in the Y direction, a positional relationship between the magnets 51 and 52 and the regulating plates 61 and 62 is maintained so that the center positions O 4 and O 5 thereof are aligned in the Y direction when viewed from above.
- the shape and size of the magnets 51 and 52 and the regulating plates 61 and 62 , and the separation gap therebetween are set in an appropriate manner according to the type of film to be formed and film-forming conditions.
- a member constituting the regulating plates 61 and 62 is made of, for example, a ceramic or resin.
- the sputtering apparatus 1 having the configuration as described above includes a control unit 100 for controlling operations of the moving mechanisms 53 and 63 , a power supply operation from the power supply unit 34 , a supply operation of an Ar gas, and the like.
- the control unit 100 comprises, for example, a computer including a central processing unit (CPU) and a storage unit (not illustrated).
- a program with a group of steps (commands) for control necessary for forming a film on the wafer 10 by the sputtering apparatus 1 is stored.
- the program includes a configuration that controls driving of the magnet moving mechanism 53 and the regulating plate movement mechanism 63 so as to move the regulating plates 61 and 62 following the movement of the magnets 51 and 52 .
- the program is stored in a storage medium, such as a hard disk, a compact disc, a magnetic optical disk, or a memory card, and is installed in the computer.
- the transfer port 17 of the processing chamber 11 is opened, and the wafer 10 is placed on the substrate support 2 by collaborative work of the external transport arm and the push-up pin (not illustrated).
- the transfer port 17 is closed, and the substrate support 2 is moved to the first position at a height position at the time of the film formation.
- Ar gas is introduced into the processing chamber 11 and the processing chamber is evacuated by the vacuum pump 15 to maintain the inside of thereof at a predetermined degree of vacuum.
- a DC voltage is applied from the power supply unit 34 to the target electrodes 3 A and 3 B to form plasma in the processing chamber 11 .
- a DC voltage is applied to the target electrodes 3 A and 3 B, an electric field is generated around the target electrodes 3 A and 3 B.
- electrons accelerated by this electric field collide with the Ar gas, the Ar gas is ionized and new electrons are generated.
- the magnets 51 and 52 generate a magnetic field along the surface of the target 31 where the magnets 51 and 52 are located, and an electric field near the target 31 and the magnetic field accelerate the electrons.
- the target particles Due to this acceleration, electrons having sufficient energy further collide with Ar gas to cause ionization to form plasma, and Ar ions in the plasma sputter the target 31 . Then, the target particles are radially (in a shape of hemisphere) emitted from the surface of the target 31 on which the magnets 51 and 52 are located toward the wafer 10 on the substrate support 2 .
- the regulating plates 61 and 62 are present between the wafer 10 on the substrate support 2 and the target 31 , and the regulating plates 61 and 62 guide the incidence of the target particles. Then, the target particles that have passed through the regulating plates 61 and 62 are incident on the wafer 10 through the slit 44 and adhere to the wafer 10 .
- FIG. 4 schematically illustrates how the target particles emitted from the target 31 of the target electrode 3 A are incident on a pattern 101 of a device formed on the wafer 10 and deposited on the pattern 101 .
- the magnets 51 and 52 of the magnet units 5 A and 5 B repeatedly move back and forth between, for example, one end and the other end of the target 31 in the Y direction at a rate of one round-trip every several seconds.
- plasma is generated on the surface of the target 31 at the positions where the magnets 51 and 52 are present. Therefore, a plasma generation location on the surface of the target 31 also moves by the movement of the magnets 51 and 52 , and a plasma state is adjusted so that the target particles can be emitted from the entire surface of the target 31 .
- the regulating plates 61 and 62 also repeatedly move back and forth in the Y direction so as to maintain the above-described positional relationship with the magnets 51 and 52 .
- the regulating plates 61 and 62 limit the incident angle at which the target particles emitted from the target 31 are incident on the wafer 10 on the substrate support 2 , and, thus, directivity of the target particles is controlled. Controlling the directivity of the target particles in this example means controlling the incident angle of the target particles with respect to the wafer 10 when viewed from above.
- the wafer 10 moves back and forth in the X direction between the first position and the second position by the substrate support moving mechanism 21 at a rate of one round-trip every several tens of seconds to several minutes, for example.
- the entire surface of the wafer 10 passes below the slit 44 and, thus, the target particles having a limited incident angle are deposited on the entire surface of the wafer 10 .
- the sputtering process for forming the metal film is performed on the entire surface of the wafer 10 while the directivity of the target particles is under control.
- the target particles are directed to the pattern 101 on the wafer 10 at an incident angle within a predetermined range, and a sputtering process for forming a film on a portion of the pattern 101 or the like can be performed.
- FIGS. 5 and 7 schematically illustrate a relationship between (i) the positional relationship between the magnets 51 and 52 and the regulating plates 61 and 62 when viewed from above and (ii) the incident angle of the target particles.
- a plan view schematically illustrating the state of deposition of the metal film on the wafer 10 is also illustrated.
- the pattern 101 at the position corresponding to the center O 3 of the slit 44 is illustrated.
- the pattern 101 has a rectangular tip portion when viewed from above.
- the target particles are actually emitted from the surface of the target 31 where the magnets 51 and 52 are located, the target 31 is not illustrated in FIGS. 5 and 7 .
- FIGS. 5 A through 5 C illustrate an example of a comparative embodiment in which, when the positions of the regulating plates 61 and 62 are fixed and the magnets 51 and 52 move in the Y direction, the positional relationship between the magnets 51 and 52 and the regulating plates 61 and 62 changes.
- FIG. 5 B the magnets 51 and 52 and the regulating plates 61 and 62 have a positional relationship similar to that of the above-described embodiment, in which their central positions O 4 and O 5 are aligned in the Y direction. In this positional relationship, among the target particles radially emitted from the target 31 on which the magnets 51 and 52 are located, only target particles having a small incident angle pass between the regulating plates 61 and 62 and are incident on the wafer.
- the incident angle in the example illustrated in the drawings when viewed from above, refers to angles ⁇ 1 and ⁇ 2 formed between a straight line L 1 extending in the X direction from the center O 3 of the slit 44 and straight lines L 2 and L 3 connecting the center O 3 to the magnets 51 and 52 .
- a metal film is attached to one end 102 of the rectangular tip portion extending in the Y direction while facing the target 31 .
- angles ⁇ 1 and ⁇ 2 illustrated in FIG. 5 B are adjusted in a range of 20° to 25°.
- FIG. 5 A illustrates a case where the positions of the regulating plates 61 and 62 are fixed and the magnets 51 and 52 are positioned on only one side in the Y direction. Under this positional relationship, among the target particles emitted from the surface of the target 31 on which the magnet 52 is located, only the target particles with a low incident angle ⁇ 2 that have passed between the regulating plates 61 and 62 are incident on the wafer 10 . Among the target particles emitted from the surface of the target 31 on which the magnet 51 is located, the target particles with a high incident angle ⁇ 1 ′ that have passed outside the regulating plate 61 are incident on the wafer 10 in an oblique direction.
- the target particles having the low incident angle ⁇ 2 adhere to one end 102 of the tip portion of the pattern 101 described above.
- the target particles having the high incident angle ⁇ 1 ′ adhere to the side 103 on one side of the tip portion of the pattern 101 , and the metal film is inadvertently deposited in the shape 110 illustrated in FIG. 5 A .
- FIG. 5 C illustrates a case where the positions of the regulating plates 61 and 62 are fixed and the magnets 51 and 52 are positioned only on the other side in the Y direction. Under this positional relationship, among the target particles emitted from the magnet 51 , only the target particles with a low incident angle ⁇ 1 that have passed between the regulating plates 61 and 62 are incident on the wafer 10 . Among the target particles emitted from the magnet 52 , the target particles with a high incident angle ⁇ 2 ′ that have passed the outside the regulating plate 62 are incident on the wafer 10 . Therefore, as illustrated in FIG. 5 C , a metal film is formed on one end 102 of the pattern 101 and a side 104 on the other side of the pattern 101 .
- the metal film may be deposited at an unplanned position, and sufficient directivity control may not be achieved.
- FIG. 6 is a plan view illustrating a metal film formed on the pattern 101 by performing a sputtering process under the positional relationship in which the positions of the regulating plates 61 and 62 are fixed while the magnets 51 and 52 are moved, as described with reference to FIGS. 5 A to 5 C .
- the positional relationship between the magnets 51 and 52 and the regulating plates 61 and 62 repeatedly changes among states of FIG. 5 A ⁇ FIG. 5 B ⁇ FIG. 5 C . Therefore, the incident angle of the target particles varies depending on the positions of the magnets 51 and 52 , and it becomes difficult to control the directivity of the target particles.
- the metal film is inadvertently formed in a shape in which the metal film is deposited on the one end 102 of the pattern 101 and both side surfaces 103 and 104 .
- FIGS. 7 A through 7 C illustrate an embodiment in which the regulating plates 61 and 62 are moved following the movement of the magnets 51 and 52 , and the positional relationship in which their center positions O 4 and O 5 in the Y direction are aligned when viewed from above is maintained between the magnets 51 and 52 and the regulating plates 61 and 62 .
- FIG. 7 A illustrates a case where the magnets 51 and 52 and the regulating plates 61 and 62 are located on one side in the Y direction.
- the target particles derived from the magnet 52 and radially emitted from the surface of the target 31 only the target particles having a low incident angle ⁇ 2 are incident on the wafer 10 due to the presence of the regulating plate 62 .
- the presence of the regulating plate 62 hinders the incidence of the target particles with a high incident angle ⁇ 1 ′ among the target particles emitted from the magnet 51 .
- a metal film is formed only on that one end 102 .
- Target particles are incident with low incident angles ⁇ 1 and ⁇ 2 on the intersection O 31 of (i) a slit center line (dash-single dotted line in FIGS. 7 A to 7 C ) passing through the center O 3 of the slit 44 and extending along a longitudinal direction of the slit 44 and (ii) a midline L 11 between the regulating plates 61 and 62 .
- a slit center line dashex-single dotted line in FIGS. 7 A to 7 C
- FIG. 7 B illustrates a case where the magnets 51 and 52 and the regulating plates 61 and 62 are located at the center position in the Y direction in their movement range.
- the regulating plates 61 and 62 due to the presence of the regulating plates 61 and 62 , only the target particles having a low incident angles ⁇ 1 and ⁇ 2 are incident on the wafer 10 and, thus, a metal film is formed on only one end 102 of the pattern 101 .
- FIG. 7 C illustrates a case where the magnets 51 and 52 and the regulating plates 61 and 62 are located on the other side in the Y direction.
- the target particles emitted from the magnet 51 only the target particles having a low incident angle ⁇ 1 are incident on the wafer 10 due to the presence of the regulating plate 61 .
- the presence of the regulating plate 61 hinders the incidence of the target particles having the high incident angle ⁇ 2 ′ among the target particles emitted from the magnet 52 . Since only the target particles having a low incident angle are incident on the wafer 10 , the metal film is formed only on one end 102 of the pattern 101 .
- the target particles are incident with the low incident angles ⁇ 1 and ⁇ 2 on the intersection O 32 of the slit center line and a midline L 12 between the regulating plates 61 and 62 .
- the regulating plates 61 and 62 are moved following the movement of the magnets 51 and 52 , the incidence of the target particles having a high incident angle on the wafer 10 is hindered. As a result, the directivity of the target particles incident on the wafer 10 passing outside the space between the two facing regulating plates 61 and 62 can also be controlled.
- the incident angle of the target particles can be limited and the directivity of the target particles can be controlled by adjusting the positions where the regulating plates 61 and 62 are disposed according to the movement of the magnets 51 and 52 . Further, the positions where the regulating plates 61 and 62 are disposed are adjusted by moving the two regulating plates 61 and 62 to follow the movement of the magnets 51 and 52 by means of the regulating plate movement mechanism 63 . Therefore, it is possible to control the directivity of the target particles with a simple configuration without increasing the size and complexity of the apparatus.
- control of the directivity of the target particles in a magnetron sputtering device can be realized by using a regulating member with, for example, a honeycomb structure having an increased number of regulating plates, or by increasing the separation distance between the target and the wafer 10 .
- a regulating member with, for example, a honeycomb structure having an increased number of regulating plates, or by increasing the separation distance between the target and the wafer 10 .
- these configurations have disadvantages because they would cause an increase in the complexity and the number of devices used. Therefore, as in the embodiment of the present disclosure, it is advantageous to control the directivity of target particles with a simple configuration while maintaining a footprint of the device.
- the discharge portion on the surface of the target 31 is moved according to the movement of the magnets 51 and 52 and, thus, the efficiency in utilizing the target 31 can be improved.
- discharge may occur on the entire surface of the target 31 , which can effectively improve the utilization efficiency of the target 31 with an inexpensive configuration.
- the discharge portion of the target 31 the desired metal film can be uniformly formed on the entire surface of the wafer 10 .
- each of collimators 8 A and 8 B ( 8 B is not illustrated) includes, for example, four regulating plates 81 to 84 , and two of the four regulating plates move to regulation positions according to the movement of the magnets 51 and 52 .
- Locations where the collimators 8 A and 8 B are disposed and components other than the collimators 8 A and 8 B are configured in the same manner as in the first embodiment described with reference to FIGS. 1 and 2 .
- components similar to those in the first embodiment are designated by the same reference numerals, and repeated descriptions thereof will be omitted.
- the four regulating plates 81 to 84 are formed to have the same shape and size as those of the regulating plates 61 and 62 of the first embodiment.
- the regulating plates 81 to 84 are spaced apart from each other, and are movable by an arrangement position adjustment mechanism 85 between a regulation position between the substrate support 2 and the target 31 and a retraction position retracted from the regulation position.
- FIG. 8 illustrates a state where the regulating plates 82 and 83 are located at their regulation positions and the regulating plates 81 and 84 are located at their retraction positions.
- FIGS. 9 A through 9 C are plan views schematically illustrating the positional relationship between the magnets 51 and 52 and the regulating plates 81 to 84 , the regulating plates located at the regulation positions are illustrated by solid lines, and the regulating plates located at the retraction positions are illustrated by broken lines.
- the arrangement position adjustment mechanism 85 includes horizontal rotating shafts 851 , 852 , 853 , and 854 fixed to the regulating plates 81 , 82 , 83 , and 84 , and drive motors (not illustrated) are provided in the rotating shafts 851 , 852 , 853 , and 854 .
- the arrangement position adjustment mechanism 85 rotates each drive motor according to the movement of the magnets 51 and 52 based on a command from the control unit 100 . By this operation, two adjacent regulating plates of the four regulating plates 81 to 84 are moved to their regulation positions, and the remaining regulating plates are moved to their retraction positions.
- the regulation position is a position between the slit 44 and the target 31 , for example, where long sides of the regulating plates 81 to 84 are substantially orthogonal to the wafer 10 on the substrate support 2 .
- the retraction position is a position where the regulating plates 81 to 84 rotate from the regulation position to the slit 44 which is the opposite direction with respect to the target 31 and fall out of the space between the substrate support 2 and the target 31 .
- the movement range in which the magnets 51 and 52 move is divided into, for example, three divided sections 91 to 93 .
- the magnets 51 and 52 move back and forth between, for example, one end (position illustrated in FIG. 9 A ) and the other end (position illustrated in FIG. 9 C ) of the target 31 .
- the regulating plates 81 and 82 at their regulation positions are disposed at positions corresponding to the magnets 51 and 52 on one end side.
- the regulating plates 83 and 84 at their regulation positions are disposed at positions corresponding to the magnets 51 and 52 on the other end side.
- the magnets 51 and 52 move between a position P 1 on the one end side and a position P 2 on the other end side in the Y direction when viewed from above, and, thus, a range between the position P 1 and the position P 2 correspond to the movement range of the magnets 51 and 52 .
- the center position of the movement range i.e., the position in the Y direction corresponding to the center O 3 of the slit 44 in this example, is set as a position P 3 .
- a first divided section 91 is set to a section from the position P 1 to the position P 3
- a third divided section 93 is set to a section from the position P 2 to the position P 3 .
- the center position between the regulating plate 81 and the regulating plate 82 at their regulation positions in the Y direction is defined as a position P 4
- the center position between the regulating plate 83 and the regulating plate 84 at their regulation positions in the Y direction is defined as a position P 5
- a second divided section 92 is set to a section from the position P 4 to the position P 5 .
- the first divided section 91 and the second divided section 92 overlap each other
- the second divided section 92 and the third divided section 93 overlap each other.
- the regulating plates 81 to 84 are disposed in association with the divided sections 91 to 93 .
- the regulating plates 81 and 82 are disposed in association with the first divided section 91
- the regulating plates 82 and 83 are disposed in association with the second divided section 92
- the regulating plates 83 and 84 are disposed in association with the third divided section 93 .
- the arrangement position adjustment mechanism 85 is configured to move the two regulating plates associated with that divided section to their regulation positions and the other regulating plates to their retraction positions.
- FIG. 9 B illustrates an example in which the magnets 51 and 52 move in the second divided section 92 , the regulating plates 82 and 83 are moved to their regulation positions accordingly, and the remaining plates 81 and 84 are moved to their retraction positions.
- the regulating plate 81 is moved to the regulation position and the regulating plate 83 is moved to the retraction position, for example, at the moment when the magnet 51 leaves the second divided section 92 .
- the regulating plates 81 and 82 move to their regulation positions and the regulating plates 83 and 84 move to their retraction positions.
- the magnets 51 and 52 are moved to the third divided section 93 from the position illustrated in FIG. 9 B .
- the regulating plate 84 is moved to the regulation position and the regulating plate 82 is moved to the retraction position, for example, at the moment when the magnet 52 leaves the second divided section 92 .
- the regulating plates 83 and 84 are moved to their regulation positions.
- the incident angle of the target particles is limited by the regulating plates 81 and 82 , and as illustrated in FIG. 9 A , the target particles having a low incident angle ⁇ 2 are incident on the wafer 10 .
- the incident angle of the target particles is limited by the regulating plates 82 and 83 , and as illustrated in FIG. 9 B , the target particles having low incident angles ⁇ 1 and ⁇ 2 are incident on the wafer 10 .
- the incident angle of the target particles are limited by the regulating plates 83 and 84 , and as illustrated in FIG. 9 C , the target particles having a low incident angle ⁇ 1 are incident on the wafer 10 .
- the regulating plates 61 and 62 are disposed according to the movement of the magnets 51 and 52 . Therefore, it is possible to limit the incident angle of the target particles and control the directivity of the target particles with a simple configuration without increasing the complexity or the size of the footprint of the device.
- this embodiment also encompasses a case where a period for performing the sputtering process while all the regulating plates 81 to 84 are disposed at their retraction positions is provided in the course of performing the sputtering by using the desired film forming process.
- the arrangement position adjustment mechanism includes a rotating shaft common to the six regulating plates and a drive motor for rotating the rotating shaft.
- the six regulating plates are fixed at their corresponding positions on the rotating shaft in its length direction (Y direction) for each of the first to third divided sections, by changing positions of the rotating shaft in a circumferential direction.
- positions of the rotating shaft in the circumferential direction are set to positions rotated by 120° in the circumferential direction.
- two regulating plates corresponding to the first divided section are disposed at their regulation positions.
- the two regulating plates corresponding to the second divided section are retracted to their retraction positions pivoted away from the regulation positions by 240° clockwise, for example.
- the two regulating plates corresponding to the third divided section are retracted to their retraction positions pivoted away from the regulation positions by 120° clockwise.
- the size and arrangement position of the regulating plates and the target are set so that the two regulating plates retracted to their retraction positions are located out of the space between the substrate support and the target.
- the rotating shaft is rotated by 120° clockwise, and two regulating plates corresponding to the second divided section are disposed at their regulation positions. Accordingly, the regulating plates corresponding to the third divided section are retracted to their retraction positions pivoted away from the regulation positions by 240° clockwise, and the regulating plates corresponding to the first divided section are retracted to their retraction positions pivoted away from the regulation positions by 120° clockwise.
- the rotating shaft is rotated by 120° clockwise, and two regulation plates corresponding to the third divided section are disposed at their regulation positions. Accordingly, the regulating plates corresponding to the first divided section are retracted to their retraction positions pivoted away from the regulation positions by 240° clockwise, and the regulating plates corresponding to the second divided section are retracted to their retraction positions pivoted away from the regulation positions by 120° clockwise. Even with such a configuration, the regulating plates are disposed according to the movement of the magnets, and, thus, it is possible to limit the incident angle of the target particles and control the directivity of the target particles.
- the number of magnets provided in the magnet unit is not limited to two and may be one or three or more.
- the number of regulating plates is not limited to two and may be three or more.
- three regulating plates may be disposed according to the movement of the magnets.
- the magnets are moved between a position on one side and a position on the other side in the front-rear direction (Y direction in FIG. 2 ) on the rear surface of the target
- the moving direction of the magnet is not limited to this direction.
- the magnets may be moved between a position on one side and a position on the other side in the lateral direction (X direction in FIG. 2 ) in a plan view along the target provided obliquely with respect to the substrate support.
- the slit which is an opening portion, extends in the X direction along the moving direction of the magnets, and the wafer W is moved in the Y direction.
- the regulating plates are disposed between the magnets and the slits according to the movement of the magnets. Therefore, in the configuration of the first embodiment, the regulating plates are configured to move in the moving direction of the magnets. Further, in the second embodiment, the regulating plates are arranged in the moving direction of the magnets, and the two regulating plates are configured to move to their regulation positions according to the movement of the magnets. Further, the magnets may be moved between the position on one side and the position on the other side set across the center portion on the rear surface of the target. For example, the positions may be closer to the center than to one end and the other end of the rear surface of the target in the moving direction.
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Abstract
Description
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JP2020126720A JP2022023640A (en) | 2020-07-27 | 2020-07-27 | Apparatus for performing sputtering treatment and method |
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US5873989A (en) * | 1997-02-06 | 1999-02-23 | Intevac, Inc. | Methods and apparatus for linear scan magnetron sputtering |
US20090194409A1 (en) * | 2006-06-08 | 2009-08-06 | Shibaura Mechatronics Corporation | Magnetron sputtering magnet assembly, magnetron sputtering device, and magnetron sputtering method |
US20130299345A1 (en) * | 2012-05-09 | 2013-11-14 | Iza Corporation | Sputtering apparatus |
US20150114835A1 (en) * | 2013-10-31 | 2015-04-30 | Tokyo Electron Limited | Film forming apparatus |
JP2016033266A (en) | 2012-05-09 | 2016-03-10 | シーゲイト テクノロジー エルエルシー | Sputtering device |
JP2017166056A (en) | 2016-12-20 | 2017-09-21 | 株式会社東芝 | Sputter device and collimator for sputtering |
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JP2013082993A (en) * | 2011-09-30 | 2013-05-09 | Tokyo Electron Ltd | Magnetron sputtering apparatus and method |
KR102273512B1 (en) * | 2017-09-07 | 2021-07-06 | 가부시키가이샤 알박 | sputtering device |
US11664207B2 (en) * | 2018-08-10 | 2023-05-30 | Tokyo Electron Limited | Film-forming apparatus, film-forming system, and film-forming method |
-
2020
- 2020-07-27 JP JP2020126720A patent/JP2022023640A/en active Pending
-
2021
- 2021-07-13 KR KR1020210091415A patent/KR20220013907A/en unknown
- 2021-07-16 CN CN202110805272.9A patent/CN113981391A/en active Pending
- 2021-07-23 US US17/384,058 patent/US11851750B2/en active Active
Patent Citations (6)
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US5873989A (en) * | 1997-02-06 | 1999-02-23 | Intevac, Inc. | Methods and apparatus for linear scan magnetron sputtering |
US20090194409A1 (en) * | 2006-06-08 | 2009-08-06 | Shibaura Mechatronics Corporation | Magnetron sputtering magnet assembly, magnetron sputtering device, and magnetron sputtering method |
US20130299345A1 (en) * | 2012-05-09 | 2013-11-14 | Iza Corporation | Sputtering apparatus |
JP2016033266A (en) | 2012-05-09 | 2016-03-10 | シーゲイト テクノロジー エルエルシー | Sputtering device |
US20150114835A1 (en) * | 2013-10-31 | 2015-04-30 | Tokyo Electron Limited | Film forming apparatus |
JP2017166056A (en) | 2016-12-20 | 2017-09-21 | 株式会社東芝 | Sputter device and collimator for sputtering |
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JP2022023640A (en) | 2022-02-08 |
KR20220013907A (en) | 2022-02-04 |
US20220025511A1 (en) | 2022-01-27 |
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