JP2019098359A - ウェーハのレーザー加工方法 - Google Patents
ウェーハのレーザー加工方法 Download PDFInfo
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- 238000003672 processing method Methods 0.000 title abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 115
- 238000012360 testing method Methods 0.000 claims abstract description 81
- 238000012545 processing Methods 0.000 claims abstract description 52
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000011148 porous material Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 22
- 238000005259 measurement Methods 0.000 claims description 10
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 230000003321 amplification Effects 0.000 claims description 6
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 6
- 238000002360 preparation method Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 12
- 235000012431 wafers Nutrition 0.000 description 59
- 230000003287 optical effect Effects 0.000 description 22
- 229910052594 sapphire Inorganic materials 0.000 description 13
- 239000010980 sapphire Substances 0.000 description 13
- 238000003384 imaging method Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004075 alteration Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 238000003331 infrared imaging Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000009416 shuttering Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0626—Energy control of the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/0869—Devices involving movement of the laser head in at least one axial direction
- B23K26/0876—Devices involving movement of the laser head in at least one axial direction in at least two axial directions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/386—Removing material by boring or cutting by boring of blind holes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/22—Connection or disconnection of sub-entities or redundant parts of a device in response to a measurement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Laser Beam Processing (AREA)
- Dicing (AREA)
Abstract
Description
波長 :1064nm
平均出力 :0.3W
バーストパルスの繰り返し周波数 :10kHz
集光スポット径 :φ1μm
加工送り速度 :100mm/s
バーストパルス数 :3
4 レーザー発振器
6 第1の間引き手段
8 増幅器
10 第2の間引き手段
11 試験用基板
12 集光器
14 ミラー
16 集光レンズ
20,20a,20b バーストパルス
21 光デバイスウェーハ
22 シールドトンネル
23 サファイア基板
24 細孔
25 エピタキシャル層
26 非晶質
27 分割予定ライン
28 分割装置
29 光デバイス
30 支持台
32 楔
34 破断強度測定器
42 バーストパルスレーザービーム照射ユニット
46 撮像ユニット
48 保護テープ
Claims (2)
- 基板の表面にエピタキシャル層が積層され、該エピタキシャル層の表面に交差する複数の分割予定ラインで区画された各領域にそれぞれデバイスが形成されたウェーハのレーザー加工方法であって、
レーザー発振器から発振され、該ウェーハに対して透過性を有する波長のパルスレーザービームのパルスを第1の間引き手段により第1の所定間隔で間引くパルス間引き工程と、
該パルス間引き工程実施後のパルスレーザービームを増幅する増幅工程と、
該増幅工程で増幅されたパルスレーザービームを第2の間引き手段により第2の所定間隔で連続して且つ間欠的に間引いてバーストパルスレーザービームを生成するバーストパルスレーザービーム生成工程と、
該ウェーハの前記基板と同一の材質及び厚みを有する試験用基板を準備する試験用基板準備工程と、
該試験用基板をレーザー加工装置のチャックテーブルで保持し、該バーストパルスレーザービームを構成する複数のパルスの時間間隔を変更しながら、該バーストパルスレーザービームの集光領域を該試験用基板の内部に位置付けて該バーストパルスレーザービームを該試験用基板に照射し、該チャックテーブルを加工送りすることにより、細孔と該細孔を囲繞する非晶質とからなる複数のシールドトンネルを直線的に所定間隔で該試験用基板内部に形成するシールドトンネル形成工程と、
該シールドトンネル形成工程を実施した後、該試験用基板を該複数のシールドトンネルに沿って破断する際の破断強度を測定する破断強度測定工程と、
該破断強度測定工程を該バーストパルスレーザービームを構成する複数のパルスの時間間隔を変更しながら複数回実施した後、該試験用基板の破断強度が最小となるパルスの時間間隔を算出する最小値算出工程と、
該最小値算出工程を実施した後、該ウェーハをレーザー加工装置の該チャックテーブルで保持し、該最小値算出工程で算出されたパルスの時間間隔を有するバーストパルスレーザービームの集光領域を該ウェーハの該分割予定ラインに対応する内部に位置付けて該バーストパルスレーザービームを該ウェーハに照射し、該チャックテーブルを加工送りすることにより、該分割予定ラインに対応する該ウェーハの内部に細孔と該細孔を囲繞する非晶質とからなる複数のシールドトンネルを直線的に所定間隔で形成するレーザー加工工程と、
を備えたことを特徴とするウェーハのレーザー加工方法。 - 基板の表面にエピタキシャル層が積層され、該エピタキシャル層の表面に交差する複数の分割予定ラインで区画された各領域にそれぞれデバイスが形成されたウェーハのレーザー加工方法であって、
レーザー発振器から発振され、該ウェーハに対して透過性を有する波長のパルスレーザービームを増幅する増幅工程と、
該増幅工程で増幅されたパルスレーザービームを間引き手段により所定間隔で連続して且つ間欠的に間引いてバーストパルスレーザービームを生成するバーストパルスレーザービーム生成工程と、
該ウェーハの前記基板と同一の材質及び厚みを有する試験用基板を準備する試験用基板準備工程と、
該試験用基板をレーザー加工装置のチャックテーブルで保持し、該バーストパルスレーザービームの集光領域を該試験用基板の内部に位置付けて該バーストパルスレーザービームを該試験用基板に照射し、該チャックテーブルを加工送りすることにより、細孔と該細孔を囲繞する非晶質とからなる複数のシールドトンネルを直線的に所定間隔で該試験用基板内部に形成するシールドトンネル形成工程と、
該シールドトンネル形成工程を実施した後、該試験用基板を該複数のシールドトンネルに沿って破断する際の破断強度を測定する破断強度測定工程と、
該破断強度測定工程を該バーストパルスレーザービームを構成する複数のパルスの時間間隔を変更しながら複数回実施した後、該試験用基板の破断強度が最小となるパルスの時間間隔を算出する最小値算出工程と、
該最小値算出工程を実施した後、該ウェーハをレーザー加工装置の該チャックテーブルで保持し、該最小値算出工程で算出された時間間隔を有するパルスを発振するレーザー発振器を使用して、該バーストパルスレーザービームの集光領域を該ウェーハの該分割予定ラインに対応する内部に位置付けて該バーストパルスレーザービームを該ウェーハに照射し、該チャックテーブルを加工送りすることにより、該分割予定ラインに対応する該ウェーハの内部に細孔と該細孔を囲繞する非晶質とからなる複数のシールドトンネルを直線的に所定間隔で形成するレーザー加工工程と、
を備えたことを特徴とするウェーハのレーザー加工方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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JP2017230283A JP6925745B2 (ja) | 2017-11-30 | 2017-11-30 | ウェーハのレーザー加工方法 |
KR1020180129964A KR102525264B1 (ko) | 2017-11-30 | 2018-10-29 | 웨이퍼의 레이저 가공 방법 |
MYPI2018704262A MY196219A (en) | 2017-11-30 | 2018-11-13 | Laser Processing Method For Wafer |
US16/195,190 US10573559B2 (en) | 2017-11-30 | 2018-11-19 | Laser processing method for wafer |
CN201811422874.0A CN109848577B (zh) | 2017-11-30 | 2018-11-27 | 晶片的激光加工方法 |
TW107142249A TWI771533B (zh) | 2017-11-30 | 2018-11-27 | 晶圓之雷射加工方法 |
DE102018220595.7A DE102018220595B4 (de) | 2017-11-30 | 2018-11-29 | Laserbearbeitungsverfahren für einen Wafer |
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JP2017230283A JP6925745B2 (ja) | 2017-11-30 | 2017-11-30 | ウェーハのレーザー加工方法 |
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JP6925745B2 JP6925745B2 (ja) | 2021-08-25 |
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US (1) | US10573559B2 (ja) |
JP (1) | JP6925745B2 (ja) |
KR (1) | KR102525264B1 (ja) |
CN (1) | CN109848577B (ja) |
DE (1) | DE102018220595B4 (ja) |
MY (1) | MY196219A (ja) |
TW (1) | TWI771533B (ja) |
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JP2020150224A (ja) * | 2019-03-15 | 2020-09-17 | キオクシア株式会社 | 半導体装置 |
JP7339031B2 (ja) * | 2019-06-28 | 2023-09-05 | 株式会社ディスコ | レーザー加工装置 |
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MY196219A (en) | 2023-03-23 |
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TW201924838A (zh) | 2019-07-01 |
US10573559B2 (en) | 2020-02-25 |
US20190164833A1 (en) | 2019-05-30 |
TWI771533B (zh) | 2022-07-21 |
DE102018220595A1 (de) | 2019-06-06 |
KR20190064434A (ko) | 2019-06-10 |
JP6925745B2 (ja) | 2021-08-25 |
CN109848577A (zh) | 2019-06-07 |
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