JP2019091822A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2019091822A
JP2019091822A JP2017220305A JP2017220305A JP2019091822A JP 2019091822 A JP2019091822 A JP 2019091822A JP 2017220305 A JP2017220305 A JP 2017220305A JP 2017220305 A JP2017220305 A JP 2017220305A JP 2019091822 A JP2019091822 A JP 2019091822A
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JP
Japan
Prior art keywords
region
semiconductor device
semiconductor
drain region
electrical connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2017220305A
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English (en)
Japanese (ja)
Other versions
JP2019091822A5 (https=
Inventor
奥村　秀樹
Hideki Okumura
秀樹 奥村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2017220305A priority Critical patent/JP2019091822A/ja
Priority to CN201810170456.0A priority patent/CN109786459A/zh
Priority to US15/916,355 priority patent/US10490628B2/en
Publication of JP2019091822A publication Critical patent/JP2019091822A/ja
Publication of JP2019091822A5 publication Critical patent/JP2019091822A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/01—Manufacture or treatment
    • H10D62/051—Forming charge compensation regions, e.g. superjunctions
    • H10D62/058—Forming charge compensation regions, e.g. superjunctions by using trenches, e.g. implanting into sidewalls of trenches or refilling trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H10D62/111—Multiple RESURF structures, e.g. double RESURF or 3D-RESURF structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/141—VDMOS having built-in components

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2017220305A 2017-11-15 2017-11-15 半導体装置 Pending JP2019091822A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017220305A JP2019091822A (ja) 2017-11-15 2017-11-15 半導体装置
CN201810170456.0A CN109786459A (zh) 2017-11-15 2018-03-01 半导体装置
US15/916,355 US10490628B2 (en) 2017-11-15 2018-03-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017220305A JP2019091822A (ja) 2017-11-15 2017-11-15 半導体装置

Publications (2)

Publication Number Publication Date
JP2019091822A true JP2019091822A (ja) 2019-06-13
JP2019091822A5 JP2019091822A5 (https=) 2020-02-27

Family

ID=66433500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017220305A Pending JP2019091822A (ja) 2017-11-15 2017-11-15 半導体装置

Country Status (3)

Country Link
US (1) US10490628B2 (https=)
JP (1) JP2019091822A (https=)
CN (1) CN109786459A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113224161A (zh) * 2020-02-05 2021-08-06 株式会社东芝 半导体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003523086A (ja) * 2000-02-12 2003-07-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体デバイスおよび半導体デバイス用の材料を製造する方法
JP2003523087A (ja) * 2000-02-12 2003-07-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 増加する逆阻止電圧のための分圧器を伴う半導体装置
JP2004519848A (ja) * 2001-02-22 2004-07-02 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 半導体デバイス

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19611045C1 (de) * 1996-03-20 1997-05-22 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
JP3993458B2 (ja) 2002-04-17 2007-10-17 株式会社東芝 半導体装置
JP4438317B2 (ja) 2003-05-09 2010-03-24 株式会社デンソー 半導体装置の製造方法
US8461648B2 (en) * 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
JP2007129086A (ja) 2005-11-04 2007-05-24 Toshiba Corp 半導体装置
JP2009135360A (ja) * 2007-12-03 2009-06-18 Renesas Technology Corp 半導体装置およびその製造方法
US8390060B2 (en) * 2010-07-06 2013-03-05 Maxpower Semiconductor, Inc. Power semiconductor devices, structures, and related methods
JP5687582B2 (ja) * 2010-09-21 2015-03-18 株式会社東芝 半導体素子およびその製造方法
US20120168819A1 (en) * 2011-01-03 2012-07-05 Fabio Alessio Marino Semiconductor pillar power MOS
US8889532B2 (en) * 2011-06-27 2014-11-18 Semiconductor Components Industries, Llc Method of making an insulated gate semiconductor device and structure

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003523086A (ja) * 2000-02-12 2003-07-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体デバイスおよび半導体デバイス用の材料を製造する方法
JP2003523087A (ja) * 2000-02-12 2003-07-29 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 増加する逆阻止電圧のための分圧器を伴う半導体装置
JP2004519848A (ja) * 2001-02-22 2004-07-02 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 半導体デバイス

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113224161A (zh) * 2020-02-05 2021-08-06 株式会社东芝 半导体装置
JP2021125559A (ja) * 2020-02-05 2021-08-30 株式会社東芝 半導体装置
JP7374795B2 (ja) 2020-02-05 2023-11-07 株式会社東芝 半導体装置
CN113224161B (zh) * 2020-02-05 2024-03-29 株式会社东芝 半导体装置

Also Published As

Publication number Publication date
US10490628B2 (en) 2019-11-26
CN109786459A (zh) 2019-05-21
US20190148488A1 (en) 2019-05-16

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