JP2019091822A5 - - Google Patents
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- Publication number
- JP2019091822A5 JP2019091822A5 JP2017220305A JP2017220305A JP2019091822A5 JP 2019091822 A5 JP2019091822 A5 JP 2019091822A5 JP 2017220305 A JP2017220305 A JP 2017220305A JP 2017220305 A JP2017220305 A JP 2017220305A JP 2019091822 A5 JP2019091822 A5 JP 2019091822A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor region
- semiconductor
- conductivity type
- drain region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 30
- 239000012535 impurity Substances 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229920005591 polysilicon Polymers 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017220305A JP2019091822A (ja) | 2017-11-15 | 2017-11-15 | 半導体装置 |
| CN201810170456.0A CN109786459A (zh) | 2017-11-15 | 2018-03-01 | 半导体装置 |
| US15/916,355 US10490628B2 (en) | 2017-11-15 | 2018-03-09 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017220305A JP2019091822A (ja) | 2017-11-15 | 2017-11-15 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2019091822A JP2019091822A (ja) | 2019-06-13 |
| JP2019091822A5 true JP2019091822A5 (https=) | 2020-02-27 |
Family
ID=66433500
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017220305A Pending JP2019091822A (ja) | 2017-11-15 | 2017-11-15 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10490628B2 (https=) |
| JP (1) | JP2019091822A (https=) |
| CN (1) | CN109786459A (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7374795B2 (ja) * | 2020-02-05 | 2023-11-07 | 株式会社東芝 | 半導体装置 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19611045C1 (de) * | 1996-03-20 | 1997-05-22 | Siemens Ag | Durch Feldeffekt steuerbares Halbleiterbauelement |
| GB0003186D0 (en) * | 2000-02-12 | 2000-04-05 | Koninkl Philips Electronics Nv | A semiconductor device |
| GB0003184D0 (en) * | 2000-02-12 | 2000-04-05 | Koninkl Philips Electronics Nv | A semiconductor device and a method of fabricating material for a semiconductor device |
| GB0104342D0 (en) * | 2001-02-22 | 2001-04-11 | Koninkl Philips Electronics Nv | Semiconductor devices |
| JP3993458B2 (ja) | 2002-04-17 | 2007-10-17 | 株式会社東芝 | 半導体装置 |
| JP4438317B2 (ja) | 2003-05-09 | 2010-03-24 | 株式会社デンソー | 半導体装置の製造方法 |
| US8461648B2 (en) * | 2005-07-27 | 2013-06-11 | Infineon Technologies Austria Ag | Semiconductor component with a drift region and a drift control region |
| JP2007129086A (ja) | 2005-11-04 | 2007-05-24 | Toshiba Corp | 半導体装置 |
| JP2009135360A (ja) * | 2007-12-03 | 2009-06-18 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| US8390060B2 (en) * | 2010-07-06 | 2013-03-05 | Maxpower Semiconductor, Inc. | Power semiconductor devices, structures, and related methods |
| JP5687582B2 (ja) * | 2010-09-21 | 2015-03-18 | 株式会社東芝 | 半導体素子およびその製造方法 |
| US20120168819A1 (en) * | 2011-01-03 | 2012-07-05 | Fabio Alessio Marino | Semiconductor pillar power MOS |
| US8889532B2 (en) * | 2011-06-27 | 2014-11-18 | Semiconductor Components Industries, Llc | Method of making an insulated gate semiconductor device and structure |
-
2017
- 2017-11-15 JP JP2017220305A patent/JP2019091822A/ja active Pending
-
2018
- 2018-03-01 CN CN201810170456.0A patent/CN109786459A/zh not_active Withdrawn
- 2018-03-09 US US15/916,355 patent/US10490628B2/en not_active Expired - Fee Related
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