JP2019091822A5 - - Google Patents

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Publication number
JP2019091822A5
JP2019091822A5 JP2017220305A JP2017220305A JP2019091822A5 JP 2019091822 A5 JP2019091822 A5 JP 2019091822A5 JP 2017220305 A JP2017220305 A JP 2017220305A JP 2017220305 A JP2017220305 A JP 2017220305A JP 2019091822 A5 JP2019091822 A5 JP 2019091822A5
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JP
Japan
Prior art keywords
region
semiconductor region
semiconductor
conductivity type
drain region
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Pending
Application number
JP2017220305A
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English (en)
Japanese (ja)
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JP2019091822A (ja
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Publication date
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Priority to JP2017220305A priority Critical patent/JP2019091822A/ja
Priority claimed from JP2017220305A external-priority patent/JP2019091822A/ja
Priority to CN201810170456.0A priority patent/CN109786459A/zh
Priority to US15/916,355 priority patent/US10490628B2/en
Publication of JP2019091822A publication Critical patent/JP2019091822A/ja
Publication of JP2019091822A5 publication Critical patent/JP2019091822A5/ja
Pending legal-status Critical Current

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JP2017220305A 2017-11-15 2017-11-15 半導体装置 Pending JP2019091822A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017220305A JP2019091822A (ja) 2017-11-15 2017-11-15 半導体装置
CN201810170456.0A CN109786459A (zh) 2017-11-15 2018-03-01 半导体装置
US15/916,355 US10490628B2 (en) 2017-11-15 2018-03-09 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017220305A JP2019091822A (ja) 2017-11-15 2017-11-15 半導体装置

Publications (2)

Publication Number Publication Date
JP2019091822A JP2019091822A (ja) 2019-06-13
JP2019091822A5 true JP2019091822A5 (https=) 2020-02-27

Family

ID=66433500

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017220305A Pending JP2019091822A (ja) 2017-11-15 2017-11-15 半導体装置

Country Status (3)

Country Link
US (1) US10490628B2 (https=)
JP (1) JP2019091822A (https=)
CN (1) CN109786459A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7374795B2 (ja) * 2020-02-05 2023-11-07 株式会社東芝 半導体装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19611045C1 (de) * 1996-03-20 1997-05-22 Siemens Ag Durch Feldeffekt steuerbares Halbleiterbauelement
GB0003186D0 (en) * 2000-02-12 2000-04-05 Koninkl Philips Electronics Nv A semiconductor device
GB0003184D0 (en) * 2000-02-12 2000-04-05 Koninkl Philips Electronics Nv A semiconductor device and a method of fabricating material for a semiconductor device
GB0104342D0 (en) * 2001-02-22 2001-04-11 Koninkl Philips Electronics Nv Semiconductor devices
JP3993458B2 (ja) 2002-04-17 2007-10-17 株式会社東芝 半導体装置
JP4438317B2 (ja) 2003-05-09 2010-03-24 株式会社デンソー 半導体装置の製造方法
US8461648B2 (en) * 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
JP2007129086A (ja) 2005-11-04 2007-05-24 Toshiba Corp 半導体装置
JP2009135360A (ja) * 2007-12-03 2009-06-18 Renesas Technology Corp 半導体装置およびその製造方法
US8390060B2 (en) * 2010-07-06 2013-03-05 Maxpower Semiconductor, Inc. Power semiconductor devices, structures, and related methods
JP5687582B2 (ja) * 2010-09-21 2015-03-18 株式会社東芝 半導体素子およびその製造方法
US20120168819A1 (en) * 2011-01-03 2012-07-05 Fabio Alessio Marino Semiconductor pillar power MOS
US8889532B2 (en) * 2011-06-27 2014-11-18 Semiconductor Components Industries, Llc Method of making an insulated gate semiconductor device and structure

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