JP2019067820A - 半導体装置の製造方法、基板処理装置、プログラム - Google Patents
半導体装置の製造方法、基板処理装置、プログラム Download PDFInfo
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- JP2019067820A JP2019067820A JP2017188787A JP2017188787A JP2019067820A JP 2019067820 A JP2019067820 A JP 2019067820A JP 2017188787 A JP2017188787 A JP 2017188787A JP 2017188787 A JP2017188787 A JP 2017188787A JP 2019067820 A JP2019067820 A JP 2019067820A
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Classifications
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Abstract
Description
基板処理装置100は、図1に示されるように、処理炉202を有し、処理炉202には、加熱手段(加熱機構)としてのヒータ207が配設されている。ヒータ207は円筒形状であり、保持板としてのヒータベース(図示せず)に支持されることにより垂直に据え付けられている。
次に、前述の基板処理装置100を用いて、半導体装置(半導体デバイス)の製造工程(製造方法)の一工程として、ウエハ200上に膜を形成(成膜)する成膜シーケンスを、図4〜図5を用いて具体的に説明する。以下の説明において、基板処理装置100を構成する各部の動作はコントローラ121により制御される。
複数のウエハ200がボート217に装填(ウエハチャージ)されると、図1に示されるように、複数のウエハ200を支持したボート217は、ボートエレベータ115によって持ち上げられて処理室201内に搬入(ボートロード)される。この状態で、シールキャップ219は○リング220bを介してマニホールド209の下端をシールした状態となる。
処理室201内の圧力、すなわち、ウエハ200が存在する空間の圧力が所望の圧力(真空度)となるように真空ポンプ246によって排気される。この際、処理室201内の圧力は圧カセンサ245で測定され、この測定された圧力情報に基づきAPCバルブ244がフィードバック制御される(圧力調整)。真空ポンプ246は、少なくともウエハ200に対する処理が終了するまでの間は常時作動させた状態を維持する。
[DCSガスの供給]
先ず、処理室201にDCSガスを供給する工程について説明する。処理室201にDCSガスを供給する工程では、ウエハ200を収容した処理室201の排気を実質的に止めた状態で、上下方向に延びたノズル249aから第1の不活性ガス流量でN2ガスを処理室201に供給する工程、処理室201内の排気を実質的に止めた状態で、ノズル249aから貯留部280に溜めたDCSガスを処理室201に供給しつつ、ノズル249aから第1の不活性ガス流量より多い第2の不活性ガス流量でN2ガスを処理室201に供給する工程、処理室201内を下方から排気している状態で、ノズル249aから第1の不活性ガス流量でN2ガスを処理室201に供給する工程、を順に行う。
ウエハ200を収容した処理室201の排気を実質的に止めた状態で、上下方向に延びたノズル249aから第1の不活性ガス流量でN2ガスを処理室201に供給する工程は、図4、図5に示すシーケンスの制御Aで例えば1秒(1s)間行われる。
処理室201の排気を実質的に止めた状態で、ノズル249aから貯留部280に溜めたDCSガスを処理室201に供給しつつ、ノズル249aから第1の不活性ガス流量より多い第2の不活性ガス流量でN2ガスを処理室201に供給する工程は、図4、図5に示すシーケンスの制御Bで例えば3秒間行われる。
処理室201を排気している状態で、ノズル249aから第1の不活性ガス流量でN2ガスを処理室201に供給する工程は、図4、図5に示すシーケンスの制御Cで3秒間行われる。
−DCSガスを除去する工程−
処理室201に残留するDCSガスを除去する工程は、図5に示すシーケンスの制御Dで行われる。
−処理室201にノズル249bからNH3ガスを供給する工程−
処理室201にノズル249bからNH3ガスを供給する工程は、図5に示すシーケンスの制御Eで行われる。
−処理室201に残留するNH3ガスを除去する工程−
処理室201に残留するNH3ガスを除去する工程は、図5に示すシーケンスの制御Fで行われる。
所定組成及び所定膜厚のSiN膜を形成する成膜処理がなされたら、バルブ243c,243d,243eを開き、ガス供給管232c,232d,232eのそれぞれから不活性ガスとしてのN2ガスを処理室201内へ供給し、排気管231から排気する。N2ガスはパージガスとして作用し、これにより、処理室201内が不活性ガスでパージされ、処理室201内に残留するガスや反応副生成物が処理室201内から除去される(パージ)。その後、処理室201内の雰囲気が不活性ガスに置換され(不活性ガス置換)、処理室201内の圧力が常圧に復帰される(大気圧復帰)。
その後、ボートエレベータ115によりシールキャップ219が下降されて、マニホールド209の下端が開口されるとともに、処理済のウエハ200が、ボート217に支持された状態でマニホールド209の下端から反応管203の外部に搬出(ボートアンロード)される。その後、処理済のウエハ200はボート217より取り出される(ウエハディスチャージ)。
次に、本実施形態の作用について、比較形態と比較しつつ説明する。先ず、比較形態について、本実施形態と異なる部分を主に説明する。
比較形態に用いられる基板処理装置1100のガス供給管232aには、図8に示されるように、貯留部280、及びバルブ265が設けられていない。さらに、基板処理装置1100には、ガス供給管232e、MFC241e、及びバルブ243eが設けられていない。つまり、処理室201に供給されるDCSガスを押し出すための希釈用ガスとしてのN2ガスは、用いられない。
次に、本実施形態の作用について説明する。なお、比較形態の製造方法の作用については、本実施形態の作用と異なる部分を主に説明する。
このように、本実施形態では、比較形態と比して、上下方向に積載されたウエハ200に形成されるSiN膜の膜厚が、ウエハ200間でばらついてしまうのを抑制することができる。
121 コントローラ(制御部の一例)
200 ウエハ(基板の一例)
201 処理室
249a ノズル(第1のノズルの一例)
249b ノズル(第2のノズルの一例)
280 貯留部
Claims (5)
- 複数の基板を配列して収容した処理室の排気を実質的に止めた状態で、基板の配列方向に沿って延びた第1のノズルから第1の不活性ガス流量で不活性ガスを前記処理室に供給する工程、
前記処理室の排気を実質的に止めた状態で、前記第1のノズルから貯留部に溜めた原料ガスを前記処理室に供給しつつ、前記第1のノズルから前記第1の不活性ガス流量より多い第2の不活性ガス流量で前記不活性ガスを前記処理室に供給する工程、
前記処理室内を前記原料ガスの流れの上流側である一端側から排気している状態で、前記第1のノズルから前記第1の不活性ガス流量で前記不活性ガスを前記処理室に供給する工程、を順に行って、前記処理室に前記原料ガスを供給する工程と、
前記原料ガスの供給を止める工程と、
前記処理室に残留する前記原料ガスを除去する工程と、
前記処理室に第2のノズルから反応ガスを供給する工程と、
前記処理室に残留する前記反応ガスを除去する工程と、
を有する半導体装置の製造方法。 - 前記処理室には複数の基板が積載されて収容され、前記原料ガスを供給する工程では、一端から他端へ向かって前記第1のノズルにガスが流れ、前記処理室内の排気は、前記第1のノズルの前記原料ガスの流れの上流側である一端側から行われ、前記処理室の排気と前記不活性ガスの流量を変化させることで前記原料ガスの供給濃度を調節する請求項1に記載の半導体装置の製造方法。
- 複数の基板を配列して収容した処理室の排気を実質的に止めた状態で、基板の配列方向に沿って延びた第1のノズルから第1の不活性ガス流量で不活性ガスを前記処理室に供給する工程、
前記処理室の排気を実質的に止めた状態で、前記第1のノズルから貯留部に溜めた原料ガスを第1の原料ガス流量で前記処理室に供給しつつ、前記第1のノズルから前記第1の不活性ガス流量より多い第2の不活性ガス流量で前記不活性ガスを前記処理室に供給する工程、
前記処理室内を前記原料ガスの流れの上流側である一端側から排気している状態で、前記第1のノズルから前記第1の原料ガス流量より少ない第2の原料ガス流量で前記原料ガスを前記処理室に供給しつつ、前記第1のノズルから前記第1の不活性ガス流量で前記不活性ガスを前記処理室に供給する工程、を順に行って、前記処理室に前記原料ガスを供給する工程と、
前記処理室に残留する前記原料ガスを除去する工程と、
前記処理室に第2のノズルから反応ガスを供給する工程と、
前記処理室に残留する前記反応ガスを除去する工程と、
を有する半導体装置の製造方法。 - 複数の基板を配列して収容する処理室と、
前記処理室に原料ガス及び不活性ガスを供給する原料ガス供給系と、
前記原料ガス供給系に設けられ、前記処理室に前記原料ガス及び前記不活性ガスを噴出する第1のノズルと、
前記原料ガス供給系に設けられ、前記原料ガスが溜められる貯留部と、
前記処理室に反応ガスを供給する反応ガス供給系と、
前記処理室に前記反応ガスを噴出する第2のノズルと、
前記処理室内を前記原料ガスの上流側である一端側から排気する排気系と、
前記原料ガス供給系、前記反応ガス供給系、前記排気系を制御して、基板を収容した前記処理室の排気を実質的に止めた状態で、前記第1のノズルから第1の不活性ガス流量で前記不活性ガスを前記処理室に供給する処理と、前記処理室の排気を実質的に止めた状態で、前記第1のノズルから前記貯留部に溜めた前記原料ガスを前記処理室に供給しつつ、前記第1のノズルから前記第1の不活性ガス流量より多い第2の不活性ガス流量で前記不活性ガスを前記処理室に供給する処理と、前記処理室を排気している状態で、前記第1のノズルから前記第1の不活性ガス流量で前記不活性ガスを前記処理室に供給する処理と、を順に行って、前記処理室に前記原料ガスを供給する処理と、前記処理室に残留する前記原料ガスを除去する処理と、前記処理室に前記第2のノズルから前記反応ガスを供給する処理と、前記処理室に残留する前記反応ガスを除去する処理と、を行うよう構成される制御部と、
を有する基板処理装置。 - 基板処理装置において複数の基板を配列して収容した処理室の排気を実質的に止めた状態で、第1のノズルから第1の不活性ガス流量で不活性ガスを前記処理室に供給する手順と、
前記処理室の排気を実質的に止めた状態で、前記第1のノズルから貯留部に溜めた原料ガスを前記処理室に供給しつつ、前記第1のノズルから前記第1の不活性ガス流量より多い第2の不活性ガス流量で前記不活性ガスを前記処理室に供給する手順と、
前記処理室を前記原料ガスの上流側である一端側から排気している状態で、前記第1のノズルから前記第1の不活性ガス流量で前記不活性ガスを前記処理室に供給する手順と、
前記原料ガスの供給を止める手順と、を順に行って、前記処理室に前記原料ガスを供給する手順と、
前記処理室に残留する前記原料ガスを除去する手順と、
前記処理室に第2のノズルから反応ガスを供給する手順と、
前記処理室に残留する前記反応ガスを除去する手順と、
をコンピュータにより基板処理装置に実行させるプログラム。
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JP7284139B2 (ja) | 2020-11-27 | 2023-05-30 | 株式会社Kokusai Electric | 半導体装置の製造方法、プログラム、基板処理装置および基板処理方法 |
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TW201921496A (zh) | 2019-06-01 |
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