JP2019057595A - 半導体デバイス製造装置、及び、半導体デバイス製造方法 - Google Patents

半導体デバイス製造装置、及び、半導体デバイス製造方法 Download PDF

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Publication number
JP2019057595A
JP2019057595A JP2017180636A JP2017180636A JP2019057595A JP 2019057595 A JP2019057595 A JP 2019057595A JP 2017180636 A JP2017180636 A JP 2017180636A JP 2017180636 A JP2017180636 A JP 2017180636A JP 2019057595 A JP2019057595 A JP 2019057595A
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JP
Japan
Prior art keywords
groove
semiconductor wafer
semiconductor
cooling
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2017180636A
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English (en)
Japanese (ja)
Other versions
JP2019057595A5 (https=
Inventor
正彦 塩見
Masahiko Shiomi
正彦 塩見
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2017180636A priority Critical patent/JP2019057595A/ja
Priority to US15/902,062 priority patent/US20190088548A1/en
Priority to EP18158335.2A priority patent/EP3460836A1/en
Publication of JP2019057595A publication Critical patent/JP2019057595A/ja
Publication of JP2019057595A5 publication Critical patent/JP2019057595A5/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/301—Marks applied to devices, e.g. for alignment or identification for alignment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H10W46/501—Marks applied to devices, e.g. for alignment or identification for use before dicing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01304—Manufacture or treatment of die-attach connectors using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
    • H10W72/01338—Manufacture or treatment of die-attach connectors using blanket deposition in gaseous form, e.g. by CVD or PVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders

Landscapes

  • Dicing (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
JP2017180636A 2017-09-20 2017-09-20 半導体デバイス製造装置、及び、半導体デバイス製造方法 Abandoned JP2019057595A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2017180636A JP2019057595A (ja) 2017-09-20 2017-09-20 半導体デバイス製造装置、及び、半導体デバイス製造方法
US15/902,062 US20190088548A1 (en) 2017-09-20 2018-02-22 Semiconductor device manufacturing apparatus and semiconductor device manufacturing method
EP18158335.2A EP3460836A1 (en) 2017-09-20 2018-02-23 Semiconductor device manufacturing apparatus and semiconductor device manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017180636A JP2019057595A (ja) 2017-09-20 2017-09-20 半導体デバイス製造装置、及び、半導体デバイス製造方法

Publications (2)

Publication Number Publication Date
JP2019057595A true JP2019057595A (ja) 2019-04-11
JP2019057595A5 JP2019057595A5 (https=) 2019-09-12

Family

ID=61282994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017180636A Abandoned JP2019057595A (ja) 2017-09-20 2017-09-20 半導体デバイス製造装置、及び、半導体デバイス製造方法

Country Status (3)

Country Link
US (1) US20190088548A1 (https=)
EP (1) EP3460836A1 (https=)
JP (1) JP2019057595A (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11049816B2 (en) * 2018-11-20 2021-06-29 Ningbo Semiconductor International Corporation Alignment mark and semiconductor device, and fabrication methods thereof
DE102019207990B4 (de) * 2019-05-31 2024-03-21 Disco Corporation Verfahren zum Bearbeiten eines Werkstücks und System zum Bearbeiten eines Werkstücks
US20220336280A1 (en) * 2021-04-15 2022-10-20 Micron Technology, Inc. Method of manufacturing microelectronic devices and related microelectronic devices, tools, and apparatus
CN115000249A (zh) * 2022-06-02 2022-09-02 东方日升新能源股份有限公司 一种hit电池的生产工艺

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100291243B1 (ko) * 1991-08-14 2001-10-24 콜린 스미스 반도체웨이퍼를쪼개는방법및장치
US9559004B2 (en) * 2011-05-12 2017-01-31 STATS ChipPAC Pte. Ltd. Semiconductor device and method of singulating thin semiconductor wafer on carrier along modified region within non-active region formed by irradiating energy
JP2013037081A (ja) * 2011-08-04 2013-02-21 Sony Corp 撮像レンズ及び撮像装置
US8871613B2 (en) * 2012-06-18 2014-10-28 Semiconductor Components Industries, Llc Semiconductor die singulation method
US8669166B1 (en) * 2012-08-15 2014-03-11 Globalfoundries Inc. Methods of thinning and/or dicing semiconducting substrates having integrated circuit products formed thereon
JP2015115538A (ja) * 2013-12-13 2015-06-22 株式会社東京精密 ウェーハ加工方法

Also Published As

Publication number Publication date
US20190088548A1 (en) 2019-03-21
EP3460836A1 (en) 2019-03-27

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