JP2019053978A5 - - Google Patents

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JP2019053978A5
JP2019053978A5 JP2018152806A JP2018152806A JP2019053978A5 JP 2019053978 A5 JP2019053978 A5 JP 2019053978A5 JP 2018152806 A JP2018152806 A JP 2018152806A JP 2018152806 A JP2018152806 A JP 2018152806A JP 2019053978 A5 JP2019053978 A5 JP 2019053978A5
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signal
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JP2019053978A (ja
JP7195810B2 (ja
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JP2018152806A 2017-09-13 2018-08-15 イオンの方向性を増大させるためのマルチレジームプラズマウエハ処理 Active JP7195810B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/703,280 US10002746B1 (en) 2017-09-13 2017-09-13 Multi regime plasma wafer processing to increase directionality of ions
US15/703,280 2017-09-13

Publications (3)

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JP2019053978A JP2019053978A (ja) 2019-04-04
JP2019053978A5 true JP2019053978A5 (enExample) 2021-11-04
JP7195810B2 JP7195810B2 (ja) 2022-12-26

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JP2018152806A Active JP7195810B2 (ja) 2017-09-13 2018-08-15 イオンの方向性を増大させるためのマルチレジームプラズマウエハ処理

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US (2) US10002746B1 (enExample)
JP (1) JP7195810B2 (enExample)
KR (1) KR102369627B1 (enExample)
CN (1) CN109599318B (enExample)
TW (1) TWI770173B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10504744B1 (en) * 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch
KR102438864B1 (ko) * 2018-09-28 2022-08-31 램 리써치 코포레이션 플라즈마 챔버의 전극으로 전력 전달 최적화를 위한 방법들 및 시스템들
CN114787972A (zh) * 2019-12-13 2022-07-22 朗姆研究公司 用于在弓形控制和掩模选择之间取得平衡的多态脉冲化
JP7542630B2 (ja) * 2020-01-30 2024-08-30 ラム リサーチ コーポレーション 伸長ｒｆストラップを有するインピーダンス整合器
CN115053322A (zh) * 2020-02-04 2022-09-13 朗姆研究公司 等离子体处理系统中射频信号接地回路的优化
WO2022051073A1 (en) * 2020-09-01 2022-03-10 Lam Research Corporation Arcing reduction in wafer bevel edge plasma processing
WO2022192016A1 (en) * 2021-03-10 2022-09-15 Lam Research Corporation Control of mask cd

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DE19933842A1 (de) * 1999-07-20 2001-02-01 Bosch Gmbh Robert Vorrichtung und Verfahren zum Ätzen eines Substrates mittels eines induktiv gekoppelten Plasmas
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
DE10317208A1 (de) * 2003-04-15 2004-11-04 Robert Bosch Gmbh Plasmadepositionsverfahren
US7144521B2 (en) 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
US7615132B2 (en) * 2003-10-17 2009-11-10 Hitachi High-Technologies Corporation Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method
US8129283B2 (en) * 2007-02-13 2012-03-06 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
JP5395491B2 (ja) 2009-03-31 2014-01-22 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US8598040B2 (en) * 2011-09-06 2013-12-03 Lam Research Corporation ETCH process for 3D flash structures
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9462672B2 (en) * 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US8952765B2 (en) 2012-03-23 2015-02-10 Mks Instruments, Inc. System and methods of bimodal automatic power and frequency tuning of RF generators
US9881772B2 (en) * 2012-03-28 2018-01-30 Lam Research Corporation Multi-radiofrequency impedance control for plasma uniformity tuning
US9536749B2 (en) * 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US9595424B2 (en) * 2015-03-02 2017-03-14 Lam Research Corporation Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes
US9761459B2 (en) * 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
JP6670692B2 (ja) 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US9761414B2 (en) * 2015-10-08 2017-09-12 Lam Research Corporation Uniformity control circuit for use within an impedance matching circuit
US10410873B2 (en) 2016-01-20 2019-09-10 Tokyo Electron Limited Power modulation for etching high aspect ratio features
KR20170093303A (ko) * 2016-02-04 2017-08-16 삼성전자주식회사 플라즈마 식각 방법 및 이를 이용한 반도체 소자의 제조 방법
US9852889B1 (en) * 2016-06-22 2017-12-26 Lam Research Corporation Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring

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