CN109599318B - 多态等离子体晶片处理以增强离子的方向性 - Google Patents
多态等离子体晶片处理以增强离子的方向性 Download PDFInfo
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- CN109599318B CN109599318B CN201811030063.6A CN201811030063A CN109599318B CN 109599318 B CN109599318 B CN 109599318B CN 201811030063 A CN201811030063 A CN 201811030063A CN 109599318 B CN109599318 B CN 109599318B
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- 238000012545 processing Methods 0.000 title abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 81
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- 230000002708 enhancing effect Effects 0.000 claims description 11
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- 238000004519 manufacturing process Methods 0.000 description 5
- 238000004590 computer program Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
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- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910018503 SF6 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
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- 239000010453 quartz Substances 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 1
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
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- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/3255—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/335—Cleaning
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/703,280 US10002746B1 (en) | 2017-09-13 | 2017-09-13 | Multi regime plasma wafer processing to increase directionality of ions |
| US15/703,280 | 2017-09-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109599318A CN109599318A (zh) | 2019-04-09 |
| CN109599318B true CN109599318B (zh) | 2023-10-27 |
Family
ID=62554809
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811030063.6A Active CN109599318B (zh) | 2017-09-13 | 2018-09-05 | 多态等离子体晶片处理以增强离子的方向性 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US10002746B1 (enExample) |
| JP (1) | JP7195810B2 (enExample) |
| KR (1) | KR102369627B1 (enExample) |
| CN (1) | CN109599318B (enExample) |
| TW (1) | TWI770173B (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10504744B1 (en) * | 2018-07-19 | 2019-12-10 | Lam Research Corporation | Three or more states for achieving high aspect ratio dielectric etch |
| KR102438864B1 (ko) * | 2018-09-28 | 2022-08-31 | 램 리써치 코포레이션 | 플라즈마 챔버의 전극으로 전력 전달 최적화를 위한 방법들 및 시스템들 |
| CN114787972A (zh) * | 2019-12-13 | 2022-07-22 | 朗姆研究公司 | 用于在弓形控制和掩模选择之间取得平衡的多态脉冲化 |
| JP7542630B2 (ja) * | 2020-01-30 | 2024-08-30 | ラム リサーチ コーポレーション | 伸長ｒｆストラップを有するインピーダンス整合器 |
| CN115053322A (zh) * | 2020-02-04 | 2022-09-13 | 朗姆研究公司 | 等离子体处理系统中射频信号接地回路的优化 |
| WO2022051073A1 (en) * | 2020-09-01 | 2022-03-10 | Lam Research Corporation | Arcing reduction in wafer bevel edge plasma processing |
| WO2022192016A1 (en) * | 2021-03-10 | 2022-09-15 | Lam Research Corporation | Control of mask cd |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0408257D0 (en) * | 2003-04-15 | 2004-05-19 | Bosch Gmbh Robert | Plasma deposition method |
| US7811941B1 (en) * | 1999-07-20 | 2010-10-12 | Robert Bosch Gmbh | Device and method for etching a substrate using an inductively coupled plasma |
| CN102983052A (zh) * | 2011-09-06 | 2013-03-20 | 朗姆研究公司 | 3d闪存结构的蚀刻工艺 |
| CN105702550A (zh) * | 2014-12-15 | 2016-06-22 | 朗姆研究公司 | 通过rf脉冲形状进行离子能量控制 |
| CN105938785A (zh) * | 2015-03-02 | 2016-09-14 | 朗姆研究公司 | 用于用rf产生器操作以控制等离子体工艺的阻抗匹配电路 |
| CN106449396A (zh) * | 2015-08-05 | 2017-02-22 | 朗姆研究公司 | 反向脉冲的系统和方法 |
| CN107017145A (zh) * | 2015-10-08 | 2017-08-04 | 朗姆研究公司 | 用于阻抗匹配电路中的均匀性控制电路 |
| KR20170093303A (ko) * | 2016-02-04 | 2017-08-16 | 삼성전자주식회사 | 플라즈마 식각 방법 및 이를 이용한 반도체 소자의 제조 방법 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6939434B2 (en) * | 2000-08-11 | 2005-09-06 | Applied Materials, Inc. | Externally excited torroidal plasma source with magnetic control of ion distribution |
| US7144521B2 (en) | 2003-08-22 | 2006-12-05 | Lam Research Corporation | High aspect ratio etch using modulation of RF powers of various frequencies |
| US7405521B2 (en) * | 2003-08-22 | 2008-07-29 | Lam Research Corporation | Multiple frequency plasma processor method and apparatus |
| US7615132B2 (en) * | 2003-10-17 | 2009-11-10 | Hitachi High-Technologies Corporation | Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method |
| US8129283B2 (en) * | 2007-02-13 | 2012-03-06 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing apparatus |
| JP5395491B2 (ja) | 2009-03-31 | 2014-01-22 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
| US9197196B2 (en) | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
| US9462672B2 (en) * | 2012-02-22 | 2016-10-04 | Lam Research Corporation | Adjustment of power and frequency based on three or more states |
| US8952765B2 (en) | 2012-03-23 | 2015-02-10 | Mks Instruments, Inc. | System and methods of bimodal automatic power and frequency tuning of RF generators |
| US9881772B2 (en) * | 2012-03-28 | 2018-01-30 | Lam Research Corporation | Multi-radiofrequency impedance control for plasma uniformity tuning |
| JP6670692B2 (ja) | 2015-09-29 | 2020-03-25 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
| US10410873B2 (en) | 2016-01-20 | 2019-09-10 | Tokyo Electron Limited | Power modulation for etching high aspect ratio features |
| US9852889B1 (en) * | 2016-06-22 | 2017-12-26 | Lam Research Corporation | Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring |
-
2017
- 2017-09-13 US US15/703,280 patent/US10002746B1/en active Active
-
2018
- 2018-05-10 TW TW107115859A patent/TWI770173B/zh active
- 2018-05-30 KR KR1020180062030A patent/KR102369627B1/ko active Active
- 2018-06-14 US US16/008,529 patent/US10304662B2/en active Active
- 2018-08-15 JP JP2018152806A patent/JP7195810B2/ja active Active
- 2018-09-05 CN CN201811030063.6A patent/CN109599318B/zh active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7811941B1 (en) * | 1999-07-20 | 2010-10-12 | Robert Bosch Gmbh | Device and method for etching a substrate using an inductively coupled plasma |
| GB0408257D0 (en) * | 2003-04-15 | 2004-05-19 | Bosch Gmbh Robert | Plasma deposition method |
| CN102983052A (zh) * | 2011-09-06 | 2013-03-20 | 朗姆研究公司 | 3d闪存结构的蚀刻工艺 |
| CN105702550A (zh) * | 2014-12-15 | 2016-06-22 | 朗姆研究公司 | 通过rf脉冲形状进行离子能量控制 |
| CN105938785A (zh) * | 2015-03-02 | 2016-09-14 | 朗姆研究公司 | 用于用rf产生器操作以控制等离子体工艺的阻抗匹配电路 |
| CN106449396A (zh) * | 2015-08-05 | 2017-02-22 | 朗姆研究公司 | 反向脉冲的系统和方法 |
| CN107017145A (zh) * | 2015-10-08 | 2017-08-04 | 朗姆研究公司 | 用于阻抗匹配电路中的均匀性控制电路 |
| KR20170093303A (ko) * | 2016-02-04 | 2017-08-16 | 삼성전자주식회사 | 플라즈마 식각 방법 및 이를 이용한 반도체 소자의 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201916216A (zh) | 2019-04-16 |
| JP2019053978A (ja) | 2019-04-04 |
| CN109599318A (zh) | 2019-04-09 |
| US10002746B1 (en) | 2018-06-19 |
| KR20190030153A (ko) | 2019-03-21 |
| JP7195810B2 (ja) | 2022-12-26 |
| TWI770173B (zh) | 2022-07-11 |
| KR102369627B1 (ko) | 2022-03-02 |
| US20190080885A1 (en) | 2019-03-14 |
| US10304662B2 (en) | 2019-05-28 |
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