JP7195810B2 - イオンの方向性を増大させるためのマルチレジームプラズマウエハ処理 - Google Patents

イオンの方向性を増大させるためのマルチレジームプラズマウエハ処理 Download PDF

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JP7195810B2
JP7195810B2 JP2018152806A JP2018152806A JP7195810B2 JP 7195810 B2 JP7195810 B2 JP 7195810B2 JP 2018152806 A JP2018152806 A JP 2018152806A JP 2018152806 A JP2018152806 A JP 2018152806A JP 7195810 B2 JP7195810 B2 JP 7195810B2
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signal
power level
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generator
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JP2019053978A (ja
JP2019053978A5 (enExample
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アレクセイ・マラクタノフ
リン・ジャオ
フェリックス・コザケビッチ
ケニス・ルチェッシ
ジーガン・チェン
ジョン・パトリック・ホランド
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Lam Research Corp
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Lam Research Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
JP2018152806A 2017-09-13 2018-08-15 イオンの方向性を増大させるためのマルチレジームプラズマウエハ処理 Active JP7195810B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/703,280 US10002746B1 (en) 2017-09-13 2017-09-13 Multi regime plasma wafer processing to increase directionality of ions
US15/703,280 2017-09-13

Publications (3)

Publication Number Publication Date
JP2019053978A JP2019053978A (ja) 2019-04-04
JP2019053978A5 JP2019053978A5 (enExample) 2021-11-04
JP7195810B2 true JP7195810B2 (ja) 2022-12-26

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JP2018152806A Active JP7195810B2 (ja) 2017-09-13 2018-08-15 イオンの方向性を増大させるためのマルチレジームプラズマウエハ処理

Country Status (5)

Country Link
US (2) US10002746B1 (enExample)
JP (1) JP7195810B2 (enExample)
KR (1) KR102369627B1 (enExample)
CN (1) CN109599318B (enExample)
TW (1) TWI770173B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10504744B1 (en) * 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch
KR102438864B1 (ko) * 2018-09-28 2022-08-31 램 리써치 코포레이션 플라즈마 챔버의 전극으로 전력 전달 최적화를 위한 방법들 및 시스템들
CN114787972A (zh) * 2019-12-13 2022-07-22 朗姆研究公司 用于在弓形控制和掩模选择之间取得平衡的多态脉冲化
JP7542630B2 (ja) * 2020-01-30 2024-08-30 ラム リサーチ コーポレーション 伸長ｒｆストラップを有するインピーダンス整合器
CN115053322A (zh) * 2020-02-04 2022-09-13 朗姆研究公司 等离子体处理系统中射频信号接地回路的优化
WO2022051073A1 (en) * 2020-09-01 2022-03-10 Lam Research Corporation Arcing reduction in wafer bevel edge plasma processing
WO2022192016A1 (en) * 2021-03-10 2022-09-15 Lam Research Corporation Control of mask cd

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010238960A (ja) 2009-03-31 2010-10-21 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2013191554A (ja) 2012-02-22 2013-09-26 Lam Research Corporation 状態に基づいた電力および周波数の調整
JP2013240042A (ja) 2012-03-23 2013-11-28 Mks Instruments Inc Ｒｆ生成器の電力および周波数をバイモーダルで自動チューニングするためのシステムおよび方法
JP2017069542A (ja) 2015-09-29 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US20170207099A1 (en) 2016-01-20 2017-07-20 Tokyo Electron Limited Power modulation for etching high aspect ratio features

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
DE19933842A1 (de) * 1999-07-20 2001-02-01 Bosch Gmbh Robert Vorrichtung und Verfahren zum Ätzen eines Substrates mittels eines induktiv gekoppelten Plasmas
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
DE10317208A1 (de) * 2003-04-15 2004-11-04 Robert Bosch Gmbh Plasmadepositionsverfahren
US7144521B2 (en) 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
US7405521B2 (en) * 2003-08-22 2008-07-29 Lam Research Corporation Multiple frequency plasma processor method and apparatus
US7615132B2 (en) * 2003-10-17 2009-11-10 Hitachi High-Technologies Corporation Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method
US8129283B2 (en) * 2007-02-13 2012-03-06 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
US8598040B2 (en) * 2011-09-06 2013-12-03 Lam Research Corporation ETCH process for 3D flash structures
US9462672B2 (en) * 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9881772B2 (en) * 2012-03-28 2018-01-30 Lam Research Corporation Multi-radiofrequency impedance control for plasma uniformity tuning
US9536749B2 (en) * 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US9595424B2 (en) * 2015-03-02 2017-03-14 Lam Research Corporation Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes
US9761459B2 (en) * 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
US9761414B2 (en) * 2015-10-08 2017-09-12 Lam Research Corporation Uniformity control circuit for use within an impedance matching circuit
KR20170093303A (ko) * 2016-02-04 2017-08-16 삼성전자주식회사 플라즈마 식각 방법 및 이를 이용한 반도체 소자의 제조 방법
US9852889B1 (en) * 2016-06-22 2017-12-26 Lam Research Corporation Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010238960A (ja) 2009-03-31 2010-10-21 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2013191554A (ja) 2012-02-22 2013-09-26 Lam Research Corporation 状態に基づいた電力および周波数の調整
JP2013240042A (ja) 2012-03-23 2013-11-28 Mks Instruments Inc Ｒｆ生成器の電力および周波数をバイモーダルで自動チューニングするためのシステムおよび方法
JP2017069542A (ja) 2015-09-29 2017-04-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
US20170207099A1 (en) 2016-01-20 2017-07-20 Tokyo Electron Limited Power modulation for etching high aspect ratio features

Also Published As

Publication number Publication date
CN109599318B (zh) 2023-10-27
TW201916216A (zh) 2019-04-16
JP2019053978A (ja) 2019-04-04
CN109599318A (zh) 2019-04-09
US10002746B1 (en) 2018-06-19
KR20190030153A (ko) 2019-03-21
TWI770173B (zh) 2022-07-11
KR102369627B1 (ko) 2022-03-02
US20190080885A1 (en) 2019-03-14
US10304662B2 (en) 2019-05-28

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