TWI770173B - 用以增加電漿之離子朝堆疊層之底部的方向性之方法與系統 - Google Patents

用以增加電漿之離子朝堆疊層之底部的方向性之方法與系統 Download PDF

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Publication number
TWI770173B
TWI770173B TW107115859A TW107115859A TWI770173B TW I770173 B TWI770173 B TW I770173B TW 107115859 A TW107115859 A TW 107115859A TW 107115859 A TW107115859 A TW 107115859A TW I770173 B TWI770173 B TW I770173B
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TW
Taiwan
Prior art keywords
state
signal
power level
khz
generator
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TW107115859A
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English (en)
Chinese (zh)
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TW201916216A (zh
Inventor
艾力西 瑪瑞卡塔諾
趙林
菲力克斯 柯札維奇
肯尼斯 露千西
志剛 陳
約翰 派翠克 霍藍德
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美商蘭姆研究公司
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Publication of TW201916216A publication Critical patent/TW201916216A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
TW107115859A 2017-09-13 2018-05-10 用以增加電漿之離子朝堆疊層之底部的方向性之方法與系統 TWI770173B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/703,280 US10002746B1 (en) 2017-09-13 2017-09-13 Multi regime plasma wafer processing to increase directionality of ions
US15/703,280 2017-09-13

Publications (2)

Publication Number Publication Date
TW201916216A TW201916216A (zh) 2019-04-16
TWI770173B true TWI770173B (zh) 2022-07-11

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TW107115859A TWI770173B (zh) 2017-09-13 2018-05-10 用以增加電漿之離子朝堆疊層之底部的方向性之方法與系統

Country Status (5)

Country Link
US (2) US10002746B1 (enExample)
JP (1) JP7195810B2 (enExample)
KR (1) KR102369627B1 (enExample)
CN (1) CN109599318B (enExample)
TW (1) TWI770173B (enExample)

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US10504744B1 (en) * 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch
KR102438864B1 (ko) * 2018-09-28 2022-08-31 램 리써치 코포레이션 플라즈마 챔버의 전극으로 전력 전달 최적화를 위한 방법들 및 시스템들
CN114787972A (zh) * 2019-12-13 2022-07-22 朗姆研究公司 用于在弓形控制和掩模选择之间取得平衡的多态脉冲化
JP7542630B2 (ja) * 2020-01-30 2024-08-30 ラム リサーチ コーポレーション 伸長ｒｆストラップを有するインピーダンス整合器
CN115053322A (zh) * 2020-02-04 2022-09-13 朗姆研究公司 等离子体处理系统中射频信号接地回路的优化
WO2022051073A1 (en) * 2020-09-01 2022-03-10 Lam Research Corporation Arcing reduction in wafer bevel edge plasma processing
WO2022192016A1 (en) * 2021-03-10 2022-09-15 Lam Research Corporation Control of mask cd

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US20050039682A1 (en) * 2003-08-22 2005-02-24 Raj Dhindsa Multiple frequency plasma etch reactor
US20130260567A1 (en) * 2012-03-28 2013-10-03 Lam Research Corporation Multi-radiofrequency impedance control for plasma uniformity tuning

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US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
DE10317208A1 (de) * 2003-04-15 2004-11-04 Robert Bosch Gmbh Plasmadepositionsverfahren
US7144521B2 (en) 2003-08-22 2006-12-05 Lam Research Corporation High aspect ratio etch using modulation of RF powers of various frequencies
US7615132B2 (en) * 2003-10-17 2009-11-10 Hitachi High-Technologies Corporation Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method
US8129283B2 (en) * 2007-02-13 2012-03-06 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
JP5395491B2 (ja) 2009-03-31 2014-01-22 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US8598040B2 (en) * 2011-09-06 2013-12-03 Lam Research Corporation ETCH process for 3D flash structures
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9462672B2 (en) * 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US8952765B2 (en) 2012-03-23 2015-02-10 Mks Instruments, Inc. System and methods of bimodal automatic power and frequency tuning of RF generators
US9536749B2 (en) * 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US9595424B2 (en) * 2015-03-02 2017-03-14 Lam Research Corporation Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes
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JP6670692B2 (ja) 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US9761414B2 (en) * 2015-10-08 2017-09-12 Lam Research Corporation Uniformity control circuit for use within an impedance matching circuit
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KR20170093303A (ko) * 2016-02-04 2017-08-16 삼성전자주식회사 플라즈마 식각 방법 및 이를 이용한 반도체 소자의 제조 방법
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US20130260567A1 (en) * 2012-03-28 2013-10-03 Lam Research Corporation Multi-radiofrequency impedance control for plasma uniformity tuning

Also Published As

Publication number Publication date
CN109599318B (zh) 2023-10-27
TW201916216A (zh) 2019-04-16
JP2019053978A (ja) 2019-04-04
CN109599318A (zh) 2019-04-09
US10002746B1 (en) 2018-06-19
KR20190030153A (ko) 2019-03-21
JP7195810B2 (ja) 2022-12-26
KR102369627B1 (ko) 2022-03-02
US20190080885A1 (en) 2019-03-14
US10304662B2 (en) 2019-05-28

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