KR102369627B1 - 이온들의 지향성을 상승시키기 위한 멀티 레짐 플라즈마 웨이퍼 프로세싱 - Google Patents

이온들의 지향성을 상승시키기 위한 멀티 레짐 플라즈마 웨이퍼 프로세싱 Download PDF

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KR102369627B1
KR102369627B1 KR1020180062030A KR20180062030A KR102369627B1 KR 102369627 B1 KR102369627 B1 KR 102369627B1 KR 1020180062030 A KR1020180062030 A KR 1020180062030A KR 20180062030 A KR20180062030 A KR 20180062030A KR 102369627 B1 KR102369627 B1 KR 102369627B1
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signal
power level
khz
generator
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KR20190030153A (ko
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알렉세이 마라크타노브
린 자오
펠릭스 코자케비치
케네스 루체시
지강 첸
존 패트릭 홀란드
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/3255—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/335—Cleaning

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020180062030A 2017-09-13 2018-05-30 이온들의 지향성을 상승시키기 위한 멀티 레짐 플라즈마 웨이퍼 프로세싱 Active KR102369627B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/703,280 2017-09-13
US15/703,280 US10002746B1 (en) 2017-09-13 2017-09-13 Multi regime plasma wafer processing to increase directionality of ions

Publications (2)

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KR20190030153A KR20190030153A (ko) 2019-03-21
KR102369627B1 true KR102369627B1 (ko) 2022-03-02

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KR1020180062030A Active KR102369627B1 (ko) 2017-09-13 2018-05-30 이온들의 지향성을 상승시키기 위한 멀티 레짐 플라즈마 웨이퍼 프로세싱

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US (2) US10002746B1 (enExample)
JP (1) JP7195810B2 (enExample)
KR (1) KR102369627B1 (enExample)
CN (1) CN109599318B (enExample)
TW (1) TWI770173B (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10504744B1 (en) * 2018-07-19 2019-12-10 Lam Research Corporation Three or more states for achieving high aspect ratio dielectric etch
KR102438864B1 (ko) * 2018-09-28 2022-08-31 램 리써치 코포레이션 플라즈마 챔버의 전극으로 전력 전달 최적화를 위한 방법들 및 시스템들
KR20220113502A (ko) * 2019-12-13 2022-08-12 램 리써치 코포레이션 보우 제어와 마스크 선택도 사이의 균형 (balance) 을 달성하기 위한 멀티-상태 펄싱 (multi-state pulsing)
JP7542630B2 (ja) * 2020-01-30 2024-08-30 ラム リサーチ コーポレーション 伸長ｒｆストラップを有するインピーダンス整合器
CN115053322A (zh) * 2020-02-04 2022-09-13 朗姆研究公司 等离子体处理系统中射频信号接地回路的优化
WO2022051073A1 (en) * 2020-09-01 2022-03-10 Lam Research Corporation Arcing reduction in wafer bevel edge plasma processing
US20230230807A1 (en) * 2021-03-10 2023-07-20 Lam Research Corporation Control of mask cd

Citations (3)

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US20050039682A1 (en) 2003-08-22 2005-02-24 Raj Dhindsa Multiple frequency plasma etch reactor
JP2011139094A (ja) 2003-08-22 2011-07-14 Lam Research Corp さまざまな周波数のｒｆ電力の変調を用いた高アスペクト比エッチング
US20130260567A1 (en) 2012-03-28 2013-10-03 Lam Research Corporation Multi-radiofrequency impedance control for plasma uniformity tuning

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DE19933842A1 (de) * 1999-07-20 2001-02-01 Bosch Gmbh Robert Vorrichtung und Verfahren zum Ätzen eines Substrates mittels eines induktiv gekoppelten Plasmas
US6939434B2 (en) * 2000-08-11 2005-09-06 Applied Materials, Inc. Externally excited torroidal plasma source with magnetic control of ion distribution
DE10317208A1 (de) * 2003-04-15 2004-11-04 Robert Bosch Gmbh Plasmadepositionsverfahren
US7615132B2 (en) * 2003-10-17 2009-11-10 Hitachi High-Technologies Corporation Plasma processing apparatus having high frequency power source with sag compensation function and plasma processing method
US8129283B2 (en) * 2007-02-13 2012-03-06 Hitachi High-Technologies Corporation Plasma processing method and plasma processing apparatus
JP5395491B2 (ja) 2009-03-31 2014-01-22 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US8598040B2 (en) * 2011-09-06 2013-12-03 Lam Research Corporation ETCH process for 3D flash structures
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9462672B2 (en) * 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US8952765B2 (en) 2012-03-23 2015-02-10 Mks Instruments, Inc. System and methods of bimodal automatic power and frequency tuning of RF generators
US9536749B2 (en) * 2014-12-15 2017-01-03 Lam Research Corporation Ion energy control by RF pulse shape
US9595424B2 (en) * 2015-03-02 2017-03-14 Lam Research Corporation Impedance matching circuit for operation with a kilohertz RF generator and a megahertz RF generator to control plasma processes
US9761459B2 (en) * 2015-08-05 2017-09-12 Lam Research Corporation Systems and methods for reverse pulsing
JP6670692B2 (ja) 2015-09-29 2020-03-25 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理方法
US9761414B2 (en) * 2015-10-08 2017-09-12 Lam Research Corporation Uniformity control circuit for use within an impedance matching circuit
KR101998943B1 (ko) * 2016-01-20 2019-07-10 도쿄엘렉트론가부시키가이샤 하이 애스펙스비의 피처를 에칭하기 위한 전력 변조
KR20170093303A (ko) * 2016-02-04 2017-08-16 삼성전자주식회사 플라즈마 식각 방법 및 이를 이용한 반도체 소자의 제조 방법
US9852889B1 (en) * 2016-06-22 2017-12-26 Lam Research Corporation Systems and methods for controlling directionality of ions in an edge region by using an electrode within a coupling ring

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
US20050039682A1 (en) 2003-08-22 2005-02-24 Raj Dhindsa Multiple frequency plasma etch reactor
JP2011139094A (ja) 2003-08-22 2011-07-14 Lam Research Corp さまざまな周波数のｒｆ電力の変調を用いた高アスペクト比エッチング
US20130260567A1 (en) 2012-03-28 2013-10-03 Lam Research Corporation Multi-radiofrequency impedance control for plasma uniformity tuning

Also Published As

Publication number Publication date
CN109599318B (zh) 2023-10-27
US10002746B1 (en) 2018-06-19
CN109599318A (zh) 2019-04-09
JP2019053978A (ja) 2019-04-04
TWI770173B (zh) 2022-07-11
KR20190030153A (ko) 2019-03-21
TW201916216A (zh) 2019-04-16
JP7195810B2 (ja) 2022-12-26
US20190080885A1 (en) 2019-03-14
US10304662B2 (en) 2019-05-28

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