JP2018533749A - アレー基板およびその製作方法、表示パネル、表示装置、電子機器 - Google Patents
アレー基板およびその製作方法、表示パネル、表示装置、電子機器 Download PDFInfo
- Publication number
- JP2018533749A JP2018533749A JP2017547557A JP2017547557A JP2018533749A JP 2018533749 A JP2018533749 A JP 2018533749A JP 2017547557 A JP2017547557 A JP 2017547557A JP 2017547557 A JP2017547557 A JP 2017547557A JP 2018533749 A JP2018533749 A JP 2018533749A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric sensor
- thin film
- array substrate
- film transistor
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 95
- 238000004519 manufacturing process Methods 0.000 title abstract description 18
- 239000010409 thin film Substances 0.000 claims abstract description 73
- 238000002161 passivation Methods 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 24
- 239000011159 matrix material Substances 0.000 claims description 13
- 239000004973 liquid crystal related substance Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 5
- 230000001976 improved effect Effects 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract description 3
- 238000004891 communication Methods 0.000 description 11
- 238000012545 processing Methods 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000004913 activation Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 230000005236 sound signal Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000007726 management method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14678—Contact-type imagers
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
- G02F1/13318—Circuits comprising a photodetector
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F18/00—Pattern recognition
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
- G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
- G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
- G06V40/12—Fingerprints or palmprints
- G06V40/13—Sensors therefor
- G06V40/1324—Sensors therefor by using geometrical optics, e.g. using prisms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14692—Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/1336—Illuminating devices
- G02F1/133626—Illuminating devices providing two modes of illumination, e.g. day-night
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2354/00—Aspects of interface with display user
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/3406—Control of illumination source
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
- H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Nonlinear Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Multimedia (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Bioinformatics & Computational Biology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Data Mining & Analysis (AREA)
- Evolutionary Biology (AREA)
- Evolutionary Computation (AREA)
- Bioinformatics & Cheminformatics (AREA)
- Artificial Intelligence (AREA)
- Image Input (AREA)
- Liquid Crystal (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
本願は、出願番号が201610827550Xであり、出願日が2016年09月14日である中国特許出願に基づいて優先権を主張する。当該中国特許出願の全ての内容は、ここに参考として引用される。
Claims (13)
- ベースと、
前記ベースの一方側の第1領域に設けられる薄膜トランジスタと、
前記ベースの一方側の第2領域に設けられ、指紋を認識するための光電センサと、
前記薄膜トランジスタの前記ベースから離間する側であって、前記光電センサの前記ベースから離間する側に設けられるパッシベーション層と、を備えることを特徴とするアレー基板。 - 前記パッシベーション層の前記薄膜トランジスタから離間する側に設けられる平坦層をさらに備えることを特徴とする請求項1に記載のアレー基板。
- 前記光電センサは、光電ダイオード、光電三極管および光電トランジスタのうちの少なくとも1つを含むことを特徴とする請求項1に記載のアレー基板。
- 請求項1から3の何れか一項に記載のアレー基板を備えることを特徴とする表示パネル。
- 前記アレー基板に対向するように設けられるカラーフィルム基板と、
前記アレー基板と前記カラーフィルム基板の間に設けられる液晶層と、をさらに備え、
前記カラーフィルム基板にブラックマトリクスが配置され、前記光電センサと前記ブラックマトリクスとが対向するように構成されることを特徴とする請求項4に記載の表示パネル。 - 表示装置であって、
請求項4または5に記載の表示パネルを備え、さらに、
前記アレー基板の前記カラーフィルム基板から離間する側に設けられるバックライトモジュールと、
前記カラーフィルム基板の前記アレー基板から離間する側に設けられる、あるいは前記アレー基板と前記カラーフィルム基板の間に設けられるタッチモジュールと、を備えることを特徴とする表示装置。 - 前記薄膜トランジスタ、前記光電センサおよび前記タッチモジュールのいずれにも電気的に接続される制御チップをさらに備え、
前記タッチモジュールは、前記光電センサに対応する箇所でタッチ信号を感知したとき、前記制御チップの制御で前記光電センサと前記光電センサに対応する薄膜トランジスタとが起動するように、制御信号を前記制御チップへ伝送することを特徴とする請求項6に記載の表示装置。 - データラインと画素電極とをさらに備え、
前記薄膜トランジスタは、前記データラインと前記画素電極とに電気的に接続され、前記データラインは、前記薄膜トランジスタを介してデータ信号を前記画素電極へ伝送し、
前記制御チップは、前記制御信号を受信したとき、前記バックライトモジュールから発された光が前記表示パネルを通過して単色光あるいは白い光になるように、前記光電センサに対応するデータラインで伝送されたデータ信号を調整することを特徴とする請求項7に記載の表示装置。 - 前記表示装置の稼働状態を検出し、検出した稼働状態を前記タッチモジュールへ伝送するように構成される状態検出手段をさらに備え、
前記タッチモジュールは、前記光電センサに対応する箇所でタッチ信号を感知したとき、前記表示装置が指紋の認識を待機している状態にあるか否かを特定し、指紋の認識を待機している状態にある場合、制御信号を前記制御チップへ伝送することを特徴とする請求項7に記載の表示装置。 - 前記光電センサと前記タッチモジュールとに電気的に接続される第1チップと、
前記薄膜トランジスタと前記タッチモジュールとに電気的に接続される第2チップと、をさらに備え、
前記タッチモジュールは、前記光電センサに対応する箇所でタッチ信号を感知したとき、前記第1チップの制御で前記光電センサが起動し、且つ前記第2チップの制御で前記光電センサに対応する薄膜トランジスタが起動するように、制御信号を前記第1チップおよび前記第2チップへそれぞれ伝送することを特徴とする請求項6に記載の表示装置。 - ベースの一方側の第1領域に、パターニングプロセスにより薄膜トランジスタを形成する工程と、
前記ベースの一方側の第2領域に、パターニングプロセスにより、指紋を認識するための光電センサを形成する工程と、
前記薄膜トランジスタと前記光電センサとの前記ベースから離間する側にパッシベーション層を形成する工程と、を含むことを特徴とするアレー基板製作方法。 - 前記パッシベーション層の前記薄膜トランジスタから離間する側に平坦層を形成する工程をさらに含むことを特徴とする請求項11に記載のアレー基板製作方法。
- 電子機器であって、
プロセッサと、
プロセッサの実行可能な指令を記憶するためのメモリとを備え、
前記電子機器は、アレー基板を有する表示装置をさらに備え、
前記アレー基板は、
ベースと、
前記ベースの一方側の第1領域に設けられる薄膜トランジスタと、
前記ベースの一方側の第2領域に設けられ、指紋を認識するための光電センサと、
前記薄膜トランジスタの前記ベースから離間する側であって、前記光電センサの前記ベースから離間する側に設けられるパッシベーション層と、を有することを特徴とする電子機器。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610827550.X | 2016-09-14 | ||
CN201610827550 | 2016-09-14 | ||
PCT/CN2016/110862 WO2018049745A1 (zh) | 2016-09-14 | 2016-12-19 | 阵列基板及其制作方法、显示面板、显示装置和电子设备 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2018533749A true JP2018533749A (ja) | 2018-11-15 |
Family
ID=59334765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017547557A Pending JP2018533749A (ja) | 2016-09-14 | 2016-12-19 | アレー基板およびその製作方法、表示パネル、表示装置、電子機器 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20180076256A1 (ja) |
EP (1) | EP3352221A3 (ja) |
JP (1) | JP2018533749A (ja) |
KR (1) | KR20180125170A (ja) |
CN (1) | CN106970495A (ja) |
RU (2) | RU2676792C1 (ja) |
WO (1) | WO2018049745A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020105418A1 (ja) * | 2018-11-22 | 2020-05-28 | 株式会社ジャパンディスプレイ | 検出装置及び表示装置 |
WO2021038392A1 (ja) * | 2019-08-27 | 2021-03-04 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
WO2021209852A1 (ja) * | 2020-04-16 | 2021-10-21 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、電子機器、及び車両 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106815573B (zh) * | 2017-01-06 | 2019-11-19 | 武汉华星光电技术有限公司 | 显示屏及电子装置 |
WO2019061183A1 (zh) * | 2017-09-28 | 2019-04-04 | 深圳传音通讯有限公司 | 显示面板组件、移动终端、图像的生成方法和存储介质 |
CN107657238B (zh) | 2017-09-29 | 2020-11-20 | 联想(北京)有限公司 | 一种指纹采集方法以及电子设备 |
SE1751355A1 (en) * | 2017-10-31 | 2019-05-01 | Fingerprint Cards Ab | Method of controlling an electronic device |
KR102593853B1 (ko) * | 2017-12-29 | 2023-10-24 | 엘지디스플레이 주식회사 | 지문 인식이 가능한 표시 장치 |
CN108169943B (zh) | 2018-01-30 | 2020-09-01 | 武汉华星光电技术有限公司 | 液晶显示器 |
CN108335631B (zh) * | 2018-03-30 | 2020-03-13 | 上海天马微电子有限公司 | 一种显示面板和显示装置 |
TWI734138B (zh) * | 2018-07-10 | 2021-07-21 | 昇佳電子股份有限公司 | 接近感測器及接近感測方法 |
CN108898955A (zh) * | 2018-07-31 | 2018-11-27 | 武汉天马微电子有限公司 | 一种显示面板及显示装置 |
CN109145775B (zh) * | 2018-08-02 | 2021-02-26 | 武汉华星光电技术有限公司 | 显示面板及显示装置 |
CN109062443A (zh) * | 2018-08-17 | 2018-12-21 | 武汉华星光电技术有限公司 | 触控感应方法及其设备 |
CN109215604B (zh) | 2018-11-07 | 2021-01-26 | 京东方科技集团股份有限公司 | 显示装置及其纹路识别方法、实现该方法的产品、纹路识别器件 |
CN109375412A (zh) * | 2018-11-30 | 2019-02-22 | 武汉华星光电技术有限公司 | 液晶显示面板及液晶显示装置 |
CN109670466A (zh) * | 2018-12-25 | 2019-04-23 | 厦门天马微电子有限公司 | 显示面板及其驱动方法和显示装置 |
CN109801569B (zh) | 2019-03-28 | 2020-07-28 | 京东方科技集团股份有限公司 | 一种阵列基板、其制作方法及显示装置 |
CN109948578B (zh) * | 2019-03-28 | 2021-07-16 | 联想(北京)有限公司 | 控制方法、控制装置和电子设备 |
CN110046610B (zh) * | 2019-04-28 | 2021-05-28 | 云谷(固安)科技有限公司 | 一种指纹识别显示装置及其制备方法、显示设备 |
CN110350012A (zh) * | 2019-07-12 | 2019-10-18 | 广州新视界光电科技有限公司 | 一种显示面板的制作方法 |
US10884273B1 (en) * | 2019-09-05 | 2021-01-05 | Wuhan China Star Optoelectronics Technology Co., Ltd. | Display panel comprising a photosensitive component that receives reflected light of a fingerprint and is connected to an underside of a second thin film transistor layer and display device |
DE112020001899T5 (de) | 2019-10-04 | 2021-12-30 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigemodul und elektronisches Gerät |
WO2021064509A1 (ja) | 2019-10-04 | 2021-04-08 | 株式会社半導体エネルギー研究所 | 表示装置 |
CN111766974A (zh) * | 2020-06-12 | 2020-10-13 | 惠州市华星光电技术有限公司 | 触控面板及触控显示装置 |
CN112114700A (zh) * | 2020-09-03 | 2020-12-22 | 深圳市华星光电半导体显示技术有限公司 | 传感器组件及显示装置 |
CN113314560B (zh) * | 2021-05-26 | 2023-12-01 | 常州大学 | 搭载图像传感功能的基于vdmos器件的三极管显示器 |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006267967A (ja) * | 2005-03-25 | 2006-10-05 | Toshiba Matsushita Display Technology Co Ltd | 平面表示装置 |
CN1982960A (zh) * | 2005-12-14 | 2007-06-20 | Lg.菲利浦Lcd株式会社 | 液晶显示器件及其制造方法 |
JP2008197148A (ja) * | 2007-02-08 | 2008-08-28 | Casio Comput Co Ltd | 光電変換装置及びそれを備えた表示パネル |
JP2008198646A (ja) * | 2007-02-08 | 2008-08-28 | Casio Comput Co Ltd | 光電変換装置及びそれを備えた表示パネル |
JP2010097420A (ja) * | 2008-10-16 | 2010-04-30 | Sony Corp | 表示撮像装置および電子機器 |
WO2010116556A1 (ja) * | 2009-03-30 | 2010-10-14 | シャープ株式会社 | 表示装置および表示装置の駆動方法 |
US20110273267A1 (en) * | 2010-05-06 | 2011-11-10 | Byungeun Bong | Mobile terminal and method of controlling the same |
JP2013044867A (ja) * | 2011-08-23 | 2013-03-04 | Samsung Yokohama Research Institute Co Ltd | タッチセンサ及びタッチセンサ内蔵液晶ディスプレイ |
JP2014081935A (ja) * | 2012-10-15 | 2014-05-08 | Beijing Boe Optoelectronics Technology Co Ltd | 静電容量式インセルタッチパネル及びディスプレイデバイス |
US20150109214A1 (en) * | 2013-10-22 | 2015-04-23 | Weidong Shi | Methods and Apparatuses of touch-fingerprinting Display |
CN104850292A (zh) * | 2015-06-01 | 2015-08-19 | 京东方科技集团股份有限公司 | 一种内嵌式触摸屏、其驱动方法及显示装置 |
JP3200182U (ja) * | 2014-10-09 | 2015-10-08 | イノラックス コーポレーション | 表示装置 |
CN105334657A (zh) * | 2015-11-26 | 2016-02-17 | 小米科技有限责任公司 | 液晶显示组件及电子设备 |
US20160132176A1 (en) * | 2014-11-12 | 2016-05-12 | Crucialtec Co., Ltd. | Display Apparatus Capable of Image Scanning and Driving Method Thereof |
CN105807521A (zh) * | 2016-05-24 | 2016-07-27 | 京东方科技集团股份有限公司 | 一种阵列基板、显示面板和显示装置 |
CN105867696A (zh) * | 2016-06-03 | 2016-08-17 | 京东方科技集团股份有限公司 | 一种触控显示面板、柔性显示面板以及显示装置 |
WO2016136664A1 (ja) * | 2015-02-24 | 2016-09-01 | シャープ株式会社 | タッチセンサ付き液晶表示装置 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100771258B1 (ko) * | 2000-05-09 | 2007-10-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 본인 인증 시스템과 본인 인증 방법 및 휴대 전화 장치 |
KR100500692B1 (ko) * | 2002-03-12 | 2005-07-12 | 비오이 하이디스 테크놀로지 주식회사 | 화상 표시 모드와 지문 인식 모드를 모두 수행하는 액정디스플레이 장치 |
KR100722570B1 (ko) * | 2004-03-26 | 2007-05-28 | 가시오게산키 가부시키가이샤 | 화상판독장치, 화상판독장치를 구비한 화상판독시스템 |
EP1605342A3 (en) * | 2004-06-10 | 2010-01-20 | Samsung Electronics Co, Ltd | Display device and driving method thereof |
US7924269B2 (en) * | 2005-01-04 | 2011-04-12 | Tpo Displays Corp. | Display devices and methods forming the same |
KR100663437B1 (ko) * | 2005-11-01 | 2007-01-02 | 삼성전자주식회사 | 지문 인식 센서를 이용한 원격 입력 방법 |
JP2007310628A (ja) * | 2006-05-18 | 2007-11-29 | Hitachi Displays Ltd | 画像表示装置 |
WO2007146779A2 (en) * | 2006-06-09 | 2007-12-21 | Apple Inc. | Touch screen liquid crystal display |
JP4809783B2 (ja) * | 2007-01-26 | 2011-11-09 | 株式会社 日立ディスプレイズ | タッチパネル付き表示モジュール |
CN101285975B (zh) * | 2008-06-06 | 2010-06-23 | 友达光电股份有限公司 | 光感测单元及具此光感测单元的像素结构与液晶显示面板 |
JPWO2010084640A1 (ja) * | 2009-01-20 | 2012-07-12 | シャープ株式会社 | エリアセンサ、およびエリアセンサ付き液晶表示装置 |
TWI408437B (zh) * | 2010-09-09 | 2013-09-11 | 液晶顯示器 | |
JP2012174937A (ja) * | 2011-02-22 | 2012-09-10 | Sony Corp | 半導体装置、半導体装置の製造方法、半導体ウエハの貼り合わせ方法及び電子機器 |
US9110320B2 (en) * | 2012-08-14 | 2015-08-18 | Apple Inc. | Display with bent inactive edge regions |
KR101376227B1 (ko) * | 2013-09-17 | 2014-03-25 | 실리콘 디스플레이 (주) | 광학식 지문센서 |
KR101407936B1 (ko) * | 2013-09-27 | 2014-06-17 | 실리콘 디스플레이 (주) | 광학식 박막 트랜지스터형 지문센서 |
TWI531942B (zh) * | 2014-08-19 | 2016-05-01 | 原相科技股份有限公司 | 觸控顯示裝置及其運作方法 |
KR102242652B1 (ko) * | 2014-11-18 | 2021-04-21 | 엘지디스플레이 주식회사 | 포토 센싱 화소를 갖는 표시 장치 |
CN104699320B (zh) * | 2015-04-01 | 2018-08-21 | 上海天马微电子有限公司 | 一种阵列基板、彩膜基板以及触摸显示装置 |
CN105095883B (zh) * | 2015-08-28 | 2019-08-06 | 京东方科技集团股份有限公司 | 一种显示面板及其指纹识别的控制方法 |
CN105184247B (zh) * | 2015-08-28 | 2018-12-28 | 京东方科技集团股份有限公司 | 一种指纹识别元件、其识别方法、显示器件及显示装置 |
CN105139793A (zh) * | 2015-08-28 | 2015-12-09 | 京东方科技集团股份有限公司 | 一种阵列基板、其驱动方法、显示面板及显示装置 |
CN105184282B (zh) * | 2015-10-14 | 2019-04-23 | 京东方科技集团股份有限公司 | 光学指纹检测装置及显示设备 |
CN105678255B (zh) * | 2016-01-04 | 2019-01-08 | 京东方科技集团股份有限公司 | 一种光学式指纹识别显示屏及显示装置 |
CN105785617B (zh) * | 2016-05-25 | 2019-04-05 | 京东方科技集团股份有限公司 | 一种显示装置及其驱动方法 |
-
2016
- 2016-09-30 CN CN201610875980.9A patent/CN106970495A/zh active Pending
- 2016-12-19 RU RU2017132862A patent/RU2676792C1/ru active
- 2016-12-19 KR KR1020187031504A patent/KR20180125170A/ko not_active Application Discontinuation
- 2016-12-19 RU RU2018136573A patent/RU2710515C2/ru active
- 2016-12-19 WO PCT/CN2016/110862 patent/WO2018049745A1/zh active Application Filing
- 2016-12-19 JP JP2017547557A patent/JP2018533749A/ja active Pending
-
2017
- 2017-09-14 EP EP17191049.0A patent/EP3352221A3/en not_active Ceased
- 2017-09-14 US US15/704,679 patent/US20180076256A1/en not_active Abandoned
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006267967A (ja) * | 2005-03-25 | 2006-10-05 | Toshiba Matsushita Display Technology Co Ltd | 平面表示装置 |
CN1982960A (zh) * | 2005-12-14 | 2007-06-20 | Lg.菲利浦Lcd株式会社 | 液晶显示器件及其制造方法 |
JP2008197148A (ja) * | 2007-02-08 | 2008-08-28 | Casio Comput Co Ltd | 光電変換装置及びそれを備えた表示パネル |
JP2008198646A (ja) * | 2007-02-08 | 2008-08-28 | Casio Comput Co Ltd | 光電変換装置及びそれを備えた表示パネル |
JP2010097420A (ja) * | 2008-10-16 | 2010-04-30 | Sony Corp | 表示撮像装置および電子機器 |
WO2010116556A1 (ja) * | 2009-03-30 | 2010-10-14 | シャープ株式会社 | 表示装置および表示装置の駆動方法 |
US20110273267A1 (en) * | 2010-05-06 | 2011-11-10 | Byungeun Bong | Mobile terminal and method of controlling the same |
JP2013044867A (ja) * | 2011-08-23 | 2013-03-04 | Samsung Yokohama Research Institute Co Ltd | タッチセンサ及びタッチセンサ内蔵液晶ディスプレイ |
JP2014081935A (ja) * | 2012-10-15 | 2014-05-08 | Beijing Boe Optoelectronics Technology Co Ltd | 静電容量式インセルタッチパネル及びディスプレイデバイス |
US20150109214A1 (en) * | 2013-10-22 | 2015-04-23 | Weidong Shi | Methods and Apparatuses of touch-fingerprinting Display |
JP3200182U (ja) * | 2014-10-09 | 2015-10-08 | イノラックス コーポレーション | 表示装置 |
US20160132176A1 (en) * | 2014-11-12 | 2016-05-12 | Crucialtec Co., Ltd. | Display Apparatus Capable of Image Scanning and Driving Method Thereof |
WO2016136664A1 (ja) * | 2015-02-24 | 2016-09-01 | シャープ株式会社 | タッチセンサ付き液晶表示装置 |
CN104850292A (zh) * | 2015-06-01 | 2015-08-19 | 京东方科技集团股份有限公司 | 一种内嵌式触摸屏、其驱动方法及显示装置 |
CN105334657A (zh) * | 2015-11-26 | 2016-02-17 | 小米科技有限责任公司 | 液晶显示组件及电子设备 |
CN105807521A (zh) * | 2016-05-24 | 2016-07-27 | 京东方科技集团股份有限公司 | 一种阵列基板、显示面板和显示装置 |
CN105867696A (zh) * | 2016-06-03 | 2016-08-17 | 京东方科技集团股份有限公司 | 一种触控显示面板、柔性显示面板以及显示装置 |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020105418A1 (ja) * | 2018-11-22 | 2020-05-28 | 株式会社ジャパンディスプレイ | 検出装置及び表示装置 |
JP2020088131A (ja) * | 2018-11-22 | 2020-06-04 | 株式会社ジャパンディスプレイ | 検出装置及び表示装置 |
CN113168788A (zh) * | 2018-11-22 | 2021-07-23 | 株式会社日本显示器 | 检测装置及显示装置 |
CN113168788B (zh) * | 2018-11-22 | 2023-03-10 | 株式会社日本显示器 | 检测装置及显示装置 |
JP7240151B2 (ja) | 2018-11-22 | 2023-03-15 | 株式会社ジャパンディスプレイ | 検出装置及び表示装置 |
WO2021038392A1 (ja) * | 2019-08-27 | 2021-03-04 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP2022076444A (ja) * | 2019-08-27 | 2022-05-19 | 株式会社半導体エネルギー研究所 | Icチップ |
JP2022113629A (ja) * | 2019-08-27 | 2022-08-04 | 株式会社半導体エネルギー研究所 | Icチップ |
JP7257459B2 (ja) | 2019-08-27 | 2023-04-13 | 株式会社半導体エネルギー研究所 | Icチップ |
JP7257460B2 (ja) | 2019-08-27 | 2023-04-13 | 株式会社半導体エネルギー研究所 | Icチップ |
WO2021209852A1 (ja) * | 2020-04-16 | 2021-10-21 | 株式会社半導体エネルギー研究所 | 表示装置、表示モジュール、電子機器、及び車両 |
Also Published As
Publication number | Publication date |
---|---|
RU2710515C2 (ru) | 2019-12-26 |
WO2018049745A1 (zh) | 2018-03-22 |
CN106970495A (zh) | 2017-07-21 |
RU2676792C1 (ru) | 2019-01-11 |
EP3352221A3 (en) | 2018-11-28 |
KR20180125170A (ko) | 2018-11-22 |
RU2018136573A3 (ja) | 2019-05-29 |
US20180076256A1 (en) | 2018-03-15 |
RU2018136573A (ru) | 2019-03-22 |
EP3352221A2 (en) | 2018-07-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2018533749A (ja) | アレー基板およびその製作方法、表示パネル、表示装置、電子機器 | |
EP3301555A1 (en) | Display apparatus, control method and controller thereof, and electronic device | |
CN107886038B (zh) | 显示装置和电子设备 | |
EP3410491B1 (en) | Oled panel, oled module, fingerprint identification method and device thereof | |
US10268861B2 (en) | Screen module, fingerprint acquisition method, and electronic device | |
CN107886037B (zh) | 显示装置和电子设备 | |
CN107885361B (zh) | 显示装置和电子设备 | |
US10942580B2 (en) | Input circuitry, terminal, and touch response method and device | |
CN107273826B (zh) | Oled面板 | |
KR101835364B1 (ko) | 터치버튼과 지문인식을 실현하는 장치, 방법, 단말기기, 프로그램 및 기록매체 | |
US10628649B2 (en) | Fingerprint recognition proccess | |
CN107195661B (zh) | Oled面板 | |
CN106529513A (zh) | 彩膜基板、显示模组和电子设备 | |
CN106815508B (zh) | 移动设备及其屏幕模组、指纹认证方法、装置及电子设备 | |
CN107885002A (zh) | 显示面板、显示装置、阵列基板的制作方法和电子设备 | |
JP2017505971A (ja) | タッチスクリーン及び指紋認証を実現する装置、並びに端末機器 | |
CN107886031B (zh) | 显示装置和电子设备 | |
CN106778624A (zh) | 彩膜基板、显示模组和电子设备 | |
CN207624698U (zh) | 阵列基板及移动终端 | |
CN106919914B (zh) | 显示模组和电子设备 | |
CN107884968A (zh) | 阵列基板及其制作方法、显示面板、显示装置和电子设备 | |
CN108132733A (zh) | 触控面板、电子设备 | |
US9753319B2 (en) | Liquid crystal display including display panel that includes wires and protruding spacers | |
CN109186756B (zh) | 光电传感器和电子设备 | |
CN112905100B (zh) | 液晶显示屏及其控制方法、电子设备 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20170907 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181030 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190125 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190604 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20190827 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20200128 |