JP2018525776A5 - - Google Patents
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- Publication number
- JP2018525776A5 JP2018525776A5 JP2017567693A JP2017567693A JP2018525776A5 JP 2018525776 A5 JP2018525776 A5 JP 2018525776A5 JP 2017567693 A JP2017567693 A JP 2017567693A JP 2017567693 A JP2017567693 A JP 2017567693A JP 2018525776 A5 JP2018525776 A5 JP 2018525776A5
- Authority
- JP
- Japan
- Prior art keywords
- perovskite
- metal
- oxide
- insulating
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 32
- 150000001768 cations Chemical group 0.000 claims 14
- 239000010408 film Substances 0.000 claims 14
- -1 preferably Chemical compound 0.000 claims 13
- 239000002243 precursor Substances 0.000 claims 12
- 239000011159 matrix material Substances 0.000 claims 11
- 150000004767 nitrides Chemical class 0.000 claims 11
- 239000000758 substrate Substances 0.000 claims 10
- 229910052751 metal Inorganic materials 0.000 claims 8
- 239000002184 metal Substances 0.000 claims 8
- 239000000463 material Substances 0.000 claims 6
- 229910001507 metal halide Inorganic materials 0.000 claims 6
- 229910000000 metal hydroxide Inorganic materials 0.000 claims 5
- 150000004692 metal hydroxides Chemical class 0.000 claims 5
- 229910044991 metal oxide Inorganic materials 0.000 claims 5
- 150000004706 metal oxides Chemical class 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 239000002159 nanocrystal Substances 0.000 claims 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 4
- 238000005424 photoluminescence Methods 0.000 claims 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 4
- 125000003837 (C1-C20) alkyl group Chemical group 0.000 claims 3
- 125000003118 aryl group Chemical group 0.000 claims 3
- 238000000231 atomic layer deposition Methods 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 238000005538 encapsulation Methods 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 3
- 238000009413 insulation Methods 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 2
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims 2
- 239000003446 ligand Substances 0.000 claims 2
- 238000002360 preparation method Methods 0.000 claims 2
- 239000002096 quantum dot Substances 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- 239000011787 zinc oxide Substances 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical group [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical group CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 229910021529 ammonia Inorganic materials 0.000 claims 1
- 150000001450 anions Chemical class 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052792 caesium Inorganic materials 0.000 claims 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 150000001805 chlorine compounds Chemical group 0.000 claims 1
- 238000006731 degradation reaction Methods 0.000 claims 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims 1
- 230000002708 enhancing effect Effects 0.000 claims 1
- 150000004820 halides Chemical class 0.000 claims 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims 1
- 239000000395 magnesium oxide Substances 0.000 claims 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000012528 membrane Substances 0.000 claims 1
- 150000005309 metal halides Chemical class 0.000 claims 1
- 239000002105 nanoparticle Substances 0.000 claims 1
- 239000002070 nanowire Substances 0.000 claims 1
- 229910000480 nickel oxide Inorganic materials 0.000 claims 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 229910052701 rubidium Inorganic materials 0.000 claims 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 238000004528 spin coating Methods 0.000 claims 1
- 238000003786 synthesis reaction Methods 0.000 claims 1
- 238000005979 thermal decomposition reaction Methods 0.000 claims 1
- 238000007736 thin film deposition technique Methods 0.000 claims 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical group Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB1511490.3A GB201511490D0 (en) | 2015-06-30 | 2015-06-30 | Photoluminescent device |
| GB1511490.3 | 2015-06-30 | ||
| GB1519269.3 | 2015-10-30 | ||
| GBGB1519269.3A GB201519269D0 (en) | 2015-10-30 | 2015-10-30 | Luminescent device |
| PCT/EP2016/065262 WO2017001542A1 (en) | 2015-06-30 | 2016-06-30 | Luminescent device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018525776A JP2018525776A (ja) | 2018-09-06 |
| JP2018525776A5 true JP2018525776A5 (https=) | 2019-07-25 |
| JP6952610B2 JP6952610B2 (ja) | 2021-10-20 |
Family
ID=56292734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017567693A Active JP6952610B2 (ja) | 2015-06-30 | 2016-06-30 | ルミネセントデバイス |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10908318B2 (https=) |
| EP (1) | EP3317905A1 (https=) |
| JP (1) | JP6952610B2 (https=) |
| KR (1) | KR102640912B1 (https=) |
| CN (2) | CN115188903A (https=) |
| WO (1) | WO2017001542A1 (https=) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2016072810A1 (ko) | 2014-11-06 | 2016-05-12 | 포항공과대학교 산학협력단 | 엑시톤 버퍼층을 포함하는 페로브스카이트 발광 소자 및 이의 제조방법 |
| KR101643052B1 (ko) | 2014-11-06 | 2016-07-27 | 포항공과대학교 산학협력단 | 파장변환입자, 파장변환입자의 제조방법, 및 파장변환입자를 포함하는 발광 소자 |
| US10276807B2 (en) | 2014-11-06 | 2019-04-30 | Postech Academy-Industry Foundation | Light-emitting layer for perovskite light-emitting device, method for manufacturing same, and perovskite light-emitting device using same |
| WO2016072806A2 (ko) | 2014-11-06 | 2016-05-12 | 포항공과대학교 산학협력단 | 코어-쉘 구조의 페로브스카이트 나노결정입자 발광체, 이의 제조방법 및 이를 이용한 발광소자 |
| CN106125398A (zh) * | 2016-07-25 | 2016-11-16 | 广东普加福光电科技有限公司 | 一种新型量子点液晶背光源 |
| WO2018086114A1 (en) * | 2016-11-14 | 2018-05-17 | Boe Technology Group Co., Ltd. | Quantum dots light emitting diode and fabricating method thereof, display panel and display apparatus |
| EP3339394B1 (en) * | 2016-12-22 | 2018-12-12 | Avantama AG | Luminescent composite materials |
| US10345688B2 (en) * | 2017-04-18 | 2019-07-09 | Unique Materials Co., Ltd. | Light emitting apparatus using composite material |
| KR20200066298A (ko) * | 2017-08-30 | 2020-06-09 | 더 플로리다 스테이트 유니버시티 리서치 파운데이션, 인크 | 밴드 갭-조정 가능한 페로브스카이트 물질 및 이의 제조 방법 |
| US20210193396A1 (en) * | 2017-10-19 | 2021-06-24 | The Governing Council Of The University Of Toronto | Quasi two-dimensional layered perovskite material, related devices and methods for manufacturing the same |
| US10741730B2 (en) * | 2017-11-10 | 2020-08-11 | Cree, Inc. | Stabilized luminescent nanoparticles comprising a perovskite semiconductor and method of fabrication |
| GB201719878D0 (en) * | 2017-11-29 | 2018-01-10 | Cambridge Entpr Ltd | Passivating potassium halide in perovskite optolectronic devices |
| TWI773726B (zh) * | 2018-01-18 | 2022-08-11 | 達興材料股份有限公司 | 螢光物質及其製法 |
| SG10201803272YA (en) * | 2018-04-19 | 2019-11-28 | Nat Univ Singapore | Perovskite-based nanocrystal scintillators |
| WO2019210174A1 (en) * | 2018-04-27 | 2019-10-31 | University Of Washington | Metal-halide semiconductor optical and electronic devices and methods of making the same |
| GB201811538D0 (en) | 2018-07-13 | 2018-08-29 | Univ Oxford Innovation Ltd | Stabilised a/m/x materials |
| JP7178215B2 (ja) * | 2018-08-30 | 2022-11-25 | エルジー ディスプレイ カンパニー リミテッド | 無機発光素子 |
| WO2020085174A1 (ja) * | 2018-10-23 | 2020-04-30 | 国立大学法人北海道大学 | ペロブスカイトナノ結晶薄膜、ペロブスカイトナノ結晶薄膜の製造方法、発光素子、光電変換素子、表示装置および電子機器 |
| JP2020066705A (ja) * | 2018-10-26 | 2020-04-30 | 株式会社小糸製作所 | 発光物および発光物製造方法 |
| TW202104544A (zh) * | 2019-05-21 | 2021-02-01 | 日商Ｄｉｃ股份有限公司 | 發光粒子之製造方法、發光粒子、發光粒子分散體、油墨組成物及發光元件 |
| CN110534631B (zh) * | 2019-09-05 | 2021-01-15 | 大连海事大学 | 一种led结合钙钛矿量子点微晶玻璃的显示用宽色域背光源 |
| GB201913835D0 (en) | 2019-09-25 | 2019-11-06 | Cambridge Entpr Ltd | Perovskite Semiconductor Devices |
| KR102374246B1 (ko) * | 2020-07-14 | 2022-03-14 | 명지대학교 산학협력단 | 원자층증착법 전구체를 이용한 양자점 패터닝 방법 및 이를 이용하여 제조된 디스플레이 장치 |
| CN112391163B (zh) * | 2020-09-30 | 2022-11-18 | 上海大学 | 氮掺杂的黄色碳量子点及其制备方法 |
| CN113155843A (zh) * | 2021-03-15 | 2021-07-23 | 浙江大学 | 缺陷检测装置、方法及发光信号的获得方法 |
| CN113105885B (zh) * | 2021-04-15 | 2023-06-23 | 河北工业大学 | 一种钙钛矿/氧化锌异质结构发光材料及其制备方法 |
| CN113480996B (zh) * | 2021-08-13 | 2023-01-13 | 河北工业大学 | 晶态氢氧化物包覆钙钛矿纳米晶及其制备方法、应用 |
| CN117625018B (zh) * | 2022-08-10 | 2025-12-02 | 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) | 一种辐射固化量子点粉末涂料及其制备方法、应用 |
| CN115466615A (zh) * | 2022-09-29 | 2022-12-13 | 五邑大学 | 一种基于钙钛矿量子点的发光薄膜及其制备方法与应用 |
| CN120077773A (zh) * | 2022-10-19 | 2025-05-30 | 夏普显示科技株式会社 | 发光元件的制造方法、发光元件及显示装置 |
| WO2024121919A1 (ja) * | 2022-12-06 | 2024-06-13 | シャープディスプレイテクノロジー株式会社 | 量子ドット溶液、発光素子、表示装置及び発光層の形成方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2815469B1 (fr) * | 2000-10-13 | 2003-03-21 | St Microelectronics Sa | Procede de fabrication d'une structure monolithique comportant un condensateur a dielectrique perovskite |
| AU2003268487A1 (en) | 2002-09-05 | 2004-03-29 | Nanosys, Inc. | Nanocomposites |
| US7834319B2 (en) | 2005-12-21 | 2010-11-16 | Los Alamos National Security, Llc | Nanophosphor composite scintillators comprising a polymer matrix |
| WO2007109734A2 (en) | 2006-03-21 | 2007-09-27 | Ultradots, Inc. | Luminescent materials that emit light in the visible range or the near infrared range |
| JP2008227330A (ja) | 2007-03-15 | 2008-09-25 | Canon Inc | 発光素子 |
| JP5093694B2 (ja) | 2008-02-19 | 2012-12-12 | 独立行政法人産業技術総合研究所 | 酸化物ぺロブスカイト薄膜ｅｌ素子 |
| US8456082B2 (en) | 2008-12-01 | 2013-06-04 | Ifire Ip Corporation | Surface-emission light source with uniform illumination |
| US8981305B2 (en) * | 2011-05-12 | 2015-03-17 | University Of Florida Research Foundation, Inc. | Index of refraction matched nanoparticles and methods of use |
| GB201208793D0 (en) * | 2012-05-18 | 2012-07-04 | Isis Innovation | Optoelectronic device |
| AU2013319979B2 (en) * | 2012-09-18 | 2016-08-25 | Oxford Photovoltaics Limited | Optoelectronic device |
| JP6103183B2 (ja) * | 2012-10-10 | 2017-03-29 | ペクセル・テクノロジーズ株式会社 | ペロブスカイト化合物を用いた電界発光素子 |
| JP6099036B2 (ja) * | 2012-10-17 | 2017-03-22 | ペクセル・テクノロジーズ株式会社 | ペロブスカイト化合物を用いた有機ｅｌ素子 |
| US9012900B2 (en) * | 2012-12-26 | 2015-04-21 | Lg Display Co., Ltd. | Organic light emitting diode display device and method of fabricating the same |
| GB201407606D0 (en) | 2014-04-30 | 2014-06-11 | Cambridge Entpr Ltd | Electroluminescent device |
| GB201410542D0 (en) | 2014-06-12 | 2014-07-30 | Isis Innovation | Heterojunction device |
| CN104183697B (zh) * | 2014-08-25 | 2017-01-11 | 常州大学 | 一种钙钛矿结构的太阳能电池及其制备方法 |
| GB201421133D0 (en) | 2014-11-28 | 2015-01-14 | Cambridge Entpr Ltd | Electroluminescent device |
| JP2017112186A (ja) | 2015-12-15 | 2017-06-22 | 三菱化学株式会社 | 半導体デバイス及びその製造方法、太陽電池、並びに半導体層形成用組成物 |
| WO2017160955A1 (en) * | 2016-03-15 | 2017-09-21 | Nutech Ventures | Insulating tunneling contact for efficient and stable perovskite solar cells |
-
2016
- 2016-06-30 US US15/740,509 patent/US10908318B2/en active Active
- 2016-06-30 WO PCT/EP2016/065262 patent/WO2017001542A1/en not_active Ceased
- 2016-06-30 CN CN202210477793.0A patent/CN115188903A/zh active Pending
- 2016-06-30 JP JP2017567693A patent/JP6952610B2/ja active Active
- 2016-06-30 KR KR1020187002859A patent/KR102640912B1/ko active Active
- 2016-06-30 CN CN201680049989.2A patent/CN107949925A/zh active Pending
- 2016-06-30 EP EP16733555.3A patent/EP3317905A1/en active Pending
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