KR102640912B1 - 발광 장치 - Google Patents

발광 장치 Download PDF

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KR102640912B1
KR102640912B1 KR1020187002859A KR20187002859A KR102640912B1 KR 102640912 B1 KR102640912 B1 KR 102640912B1 KR 1020187002859 A KR1020187002859 A KR 1020187002859A KR 20187002859 A KR20187002859 A KR 20187002859A KR 102640912 B1 KR102640912 B1 KR 102640912B1
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perovskite
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metal
crystals
insulating
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KR20180023975A (ko
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리차드 헨리 프렌드
광루 리
다웨이 디
레자 사베리 모가담
즈 쾅 탄
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캠브리지 엔터프라이즈 리미티드
킹 압듈라지즈 시티 포 사이언스 앤 테크놀러지
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Priority claimed from GBGB1519269.3A external-priority patent/GB201519269D0/en
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/02—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of crystals, e.g. rock-salt, semi-conductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/06—Luminescent materials, e.g. electroluminescent or chemiluminescent containing organic luminescent materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/04—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of organic materials, e.g. plastics
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/206—Filters comprising particles embedded in a solid matrix
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
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    • C09K2211/00—Chemical nature of organic luminescent or tenebrescent compounds
    • C09K2211/10—Non-macromolecular compounds
    • C09K2211/1003—Carbocyclic compounds
    • C09K2211/1014—Carbocyclic compounds bridged by heteroatoms, e.g. N, P, Si or B
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Electroluminescent Light Sources (AREA)
  • Luminescent Compositions (AREA)
KR1020187002859A 2015-06-30 2016-06-30 발광 장치 Active KR102640912B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
GBGB1511490.3A GB201511490D0 (en) 2015-06-30 2015-06-30 Photoluminescent device
GB1511490.3 2015-06-30
GB1519269.3 2015-10-30
GBGB1519269.3A GB201519269D0 (en) 2015-10-30 2015-10-30 Luminescent device
PCT/EP2016/065262 WO2017001542A1 (en) 2015-06-30 2016-06-30 Luminescent device

Publications (2)

Publication Number Publication Date
KR20180023975A KR20180023975A (ko) 2018-03-07
KR102640912B1 true KR102640912B1 (ko) 2024-02-27

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US (1) US10908318B2 (https=)
EP (1) EP3317905A1 (https=)
JP (1) JP6952610B2 (https=)
KR (1) KR102640912B1 (https=)
CN (2) CN115188903A (https=)
WO (1) WO2017001542A1 (https=)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016072810A1 (ko) 2014-11-06 2016-05-12 포항공과대학교 산학협력단 엑시톤 버퍼층을 포함하는 페로브스카이트 발광 소자 및 이의 제조방법
KR101643052B1 (ko) 2014-11-06 2016-07-27 포항공과대학교 산학협력단 파장변환입자, 파장변환입자의 제조방법, 및 파장변환입자를 포함하는 발광 소자
US10276807B2 (en) 2014-11-06 2019-04-30 Postech Academy-Industry Foundation Light-emitting layer for perovskite light-emitting device, method for manufacturing same, and perovskite light-emitting device using same
WO2016072806A2 (ko) 2014-11-06 2016-05-12 포항공과대학교 산학협력단 코어-쉘 구조의 페로브스카이트 나노결정입자 발광체, 이의 제조방법 및 이를 이용한 발광소자
CN106125398A (zh) * 2016-07-25 2016-11-16 广东普加福光电科技有限公司 一种新型量子点液晶背光源
WO2018086114A1 (en) * 2016-11-14 2018-05-17 Boe Technology Group Co., Ltd. Quantum dots light emitting diode and fabricating method thereof, display panel and display apparatus
EP3339394B1 (en) * 2016-12-22 2018-12-12 Avantama AG Luminescent composite materials
US10345688B2 (en) * 2017-04-18 2019-07-09 Unique Materials Co., Ltd. Light emitting apparatus using composite material
KR20200066298A (ko) * 2017-08-30 2020-06-09 더 플로리다 스테이트 유니버시티 리서치 파운데이션, 인크 밴드 갭-조정 가능한 페로브스카이트 물질 및 이의 제조 방법
US20210193396A1 (en) * 2017-10-19 2021-06-24 The Governing Council Of The University Of Toronto Quasi two-dimensional layered perovskite material, related devices and methods for manufacturing the same
US10741730B2 (en) * 2017-11-10 2020-08-11 Cree, Inc. Stabilized luminescent nanoparticles comprising a perovskite semiconductor and method of fabrication
GB201719878D0 (en) * 2017-11-29 2018-01-10 Cambridge Entpr Ltd Passivating potassium halide in perovskite optolectronic devices
TWI773726B (zh) * 2018-01-18 2022-08-11 達興材料股份有限公司 螢光物質及其製法
SG10201803272YA (en) * 2018-04-19 2019-11-28 Nat Univ Singapore Perovskite-based nanocrystal scintillators
WO2019210174A1 (en) * 2018-04-27 2019-10-31 University Of Washington Metal-halide semiconductor optical and electronic devices and methods of making the same
GB201811538D0 (en) 2018-07-13 2018-08-29 Univ Oxford Innovation Ltd Stabilised a/m/x materials
JP7178215B2 (ja) * 2018-08-30 2022-11-25 エルジー ディスプレイ カンパニー リミテッド 無機発光素子
WO2020085174A1 (ja) * 2018-10-23 2020-04-30 国立大学法人北海道大学 ペロブスカイトナノ結晶薄膜、ペロブスカイトナノ結晶薄膜の製造方法、発光素子、光電変換素子、表示装置および電子機器
JP2020066705A (ja) * 2018-10-26 2020-04-30 株式会社小糸製作所 発光物および発光物製造方法
TW202104544A (zh) * 2019-05-21 2021-02-01 日商Ｄｉｃ股份有限公司 發光粒子之製造方法、發光粒子、發光粒子分散體、油墨組成物及發光元件
CN110534631B (zh) * 2019-09-05 2021-01-15 大连海事大学 一种led结合钙钛矿量子点微晶玻璃的显示用宽色域背光源
GB201913835D0 (en) 2019-09-25 2019-11-06 Cambridge Entpr Ltd Perovskite Semiconductor Devices
KR102374246B1 (ko) * 2020-07-14 2022-03-14 명지대학교 산학협력단 원자층증착법 전구체를 이용한 양자점 패터닝 방법 및 이를 이용하여 제조된 디스플레이 장치
CN112391163B (zh) * 2020-09-30 2022-11-18 上海大学 氮掺杂的黄色碳量子点及其制备方法
CN113155843A (zh) * 2021-03-15 2021-07-23 浙江大学 缺陷检测装置、方法及发光信号的获得方法
CN113105885B (zh) * 2021-04-15 2023-06-23 河北工业大学 一种钙钛矿/氧化锌异质结构发光材料及其制备方法
CN113480996B (zh) * 2021-08-13 2023-01-13 河北工业大学 晶态氢氧化物包覆钙钛矿纳米晶及其制备方法、应用
CN117625018B (zh) * 2022-08-10 2025-12-02 北京航空航天大学合肥创新研究院(北京航空航天大学合肥研究生院) 一种辐射固化量子点粉末涂料及其制备方法、应用
CN115466615A (zh) * 2022-09-29 2022-12-13 五邑大学 一种基于钙钛矿量子点的发光薄膜及其制备方法与应用
CN120077773A (zh) * 2022-10-19 2025-05-30 夏普显示科技株式会社 发光元件的制造方法、发光元件及显示装置
WO2024121919A1 (ja) * 2022-12-06 2024-06-13 シャープディスプレイテクノロジー株式会社 量子ドット溶液、発光素子、表示装置及び発光層の形成方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009104595A1 (ja) * 2008-02-19 2009-08-27 独立行政法人産業技術総合研究所 酸化物ぺロブスカイト薄膜el素子
JP2014082377A (ja) * 2012-10-17 2014-05-08 Peccell Technologies Inc ペロブスカイト化合物を用いた有機ｅｌ素子

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2815469B1 (fr) * 2000-10-13 2003-03-21 St Microelectronics Sa Procede de fabrication d'une structure monolithique comportant un condensateur a dielectrique perovskite
AU2003268487A1 (en) 2002-09-05 2004-03-29 Nanosys, Inc. Nanocomposites
US7834319B2 (en) 2005-12-21 2010-11-16 Los Alamos National Security, Llc Nanophosphor composite scintillators comprising a polymer matrix
WO2007109734A2 (en) 2006-03-21 2007-09-27 Ultradots, Inc. Luminescent materials that emit light in the visible range or the near infrared range
JP2008227330A (ja) 2007-03-15 2008-09-25 Canon Inc 発光素子
US8456082B2 (en) 2008-12-01 2013-06-04 Ifire Ip Corporation Surface-emission light source with uniform illumination
US8981305B2 (en) * 2011-05-12 2015-03-17 University Of Florida Research Foundation, Inc. Index of refraction matched nanoparticles and methods of use
GB201208793D0 (en) * 2012-05-18 2012-07-04 Isis Innovation Optoelectronic device
AU2013319979B2 (en) * 2012-09-18 2016-08-25 Oxford Photovoltaics Limited Optoelectronic device
JP6103183B2 (ja) * 2012-10-10 2017-03-29 ペクセル・テクノロジーズ株式会社 ペロブスカイト化合物を用いた電界発光素子
US9012900B2 (en) * 2012-12-26 2015-04-21 Lg Display Co., Ltd. Organic light emitting diode display device and method of fabricating the same
GB201407606D0 (en) 2014-04-30 2014-06-11 Cambridge Entpr Ltd Electroluminescent device
GB201410542D0 (en) 2014-06-12 2014-07-30 Isis Innovation Heterojunction device
CN104183697B (zh) * 2014-08-25 2017-01-11 常州大学 一种钙钛矿结构的太阳能电池及其制备方法
GB201421133D0 (en) 2014-11-28 2015-01-14 Cambridge Entpr Ltd Electroluminescent device
JP2017112186A (ja) 2015-12-15 2017-06-22 三菱化学株式会社 半導体デバイス及びその製造方法、太陽電池、並びに半導体層形成用組成物
WO2017160955A1 (en) * 2016-03-15 2017-09-21 Nutech Ventures Insulating tunneling contact for efficient and stable perovskite solar cells

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009104595A1 (ja) * 2008-02-19 2009-08-27 独立行政法人産業技術総合研究所 酸化物ぺロブスカイト薄膜el素子
JP2014082377A (ja) * 2012-10-17 2014-05-08 Peccell Technologies Inc ペロブスカイト化合物を用いた有機ｅｌ素子

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EP3317905A1 (en) 2018-05-09
CN115188903A (zh) 2022-10-14
WO2017001542A1 (en) 2017-01-05
JP6952610B2 (ja) 2021-10-20
CN107949925A (zh) 2018-04-20
JP2018525776A (ja) 2018-09-06
US10908318B2 (en) 2021-02-02
US20180196164A1 (en) 2018-07-12
KR20180023975A (ko) 2018-03-07

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