JP2018522797A - ケイ化物系複合材料およびその製造方法 - Google Patents
ケイ化物系複合材料およびその製造方法 Download PDFInfo
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Abstract
【選択図】図1
Description
i)ケイ化物、Si3N4および少なくとも1種の酸化物の粉末を提供するステップと、
ii)前記粉末を均一にブレンドするステップと、
iii)ブレンド粉末の少なくとも第1の層を支持体表面上に置くステップと、
iv)150〜1000Wのエネルギー出力を有する電源を起動することによって、粉末の少なくとも一部を溶融させるステップと、
v)溶融させた粉末を冷却固化させて、ケイ化物系複合材料を得るステップと、
を含むケイ化物系複合材料の製造方法に対応する。
Mo、B、W、Nb、Ta、Ti、Cr、Co、Y、またはそれらの組み合わせのケイ化物、
Si3N4、および
酸化イットリウム、酸化セリウム、およびそれらの組み合わせからなる群から選択される少なくとも1種の酸化物、
を含むケイ化物系複合材料に対応する。
少なくとも35重量%のケイ化物、
15〜45重量%のSi3N4、
0.5〜15重量%の少なくとも1種の酸化物、
4重量%までの不純物、
を含むことができる。考えられる不純物としては、Al、C、Fe、Ca、O、N、またはそれらの組み合わせが挙げられる。
20〜40重量%のSi3N4、
0.5〜8重量%のY2O3、
0.5〜6重量%のCeO2、
4重量%までの不純物、
を含む。
20〜40重量%のSi3N4、
0.5〜6重量%のY2O3、
0.5〜4重量%のCeO2、
<0.1重量%のAl、
<0.5重量%のC、
<0.1重量%のFe、
<0.1重量%のCa、
<1.5重量%のO、
<0.5重量%のN、
を含み、
残りはMoSi2である。
i)ケイ化物、Si3N4および少なくとも1種の酸化物の粉末を提供するステップと、
ii)前記粉末を均一にブレンドするステップと、
iii)ブレンド粉末の少なくとも第1の層を支持体表面上に置くステップと、
iv)150〜1000Wのエネルギー出力を有する電源を起動することによって、粉末の少なくとも一部を溶融させるステップと、
v)溶融させた粉末を冷却固化させて、ケイ化物系複合材料を得るステップと、
を含むケイ化物系複合材料の製造方法に対応する。
vi)ステップv)で得られたケイ化物系複合材料上に、少なくとも部分的に材料表面を覆う、ブレンド粉末の第2の層を置くステップと、
vii)ステップiv)およびv)を繰り返し、このようにしてステップv)のケイ化物系複合材料に付着するケイ化物系複合材料の第2の層を得るステップと、ならびに場合により、
viii)ステップvi)およびvii)を繰り返し、ケイ化物系複合材料の所望の厚さおよび形状が達成されるまで、ブレンド粉末の第3の層、およびさらなる層を置くステップ、
をさらに含むことができる。
a)ケイ化物、Si3N4および少なくとも1種の酸化物の粉末を提供するステップと、
b)前記粉末を均質にブレンドするステップと、
c)ブレンド粉末の少なくとも第1の層を支持体表面上に置くステップと、
d)ブレンド粉末の層の上にバインダー液滴を堆積させるステップと、
e)加熱源を用いて前記粉末を乾燥させて、ケイ化物系複合材料を得るステップと、
を含む。
f)ステップe)で得られたケイ化物系複合材料上に、少なくとも部分的に材料表面を覆う、ブレンド粉末の第2の層を置くステップと、
g)ステップc)およびd)を繰り返し、このようにしてステップe)のケイ化物系複合材料に付着するケイ化物系複合材料の第2の層を得るステップと、ならびに場合により、
h)ステップf)およびg)を繰り返し、ケイ化物系複合材料の所望の厚さおよび形状が達成されるまで、ブレンド粉末の第3の層、およびさらなる層を置くステップ、
をさらに含むことができる。
j)高温、好ましくは500℃〜750℃において、不活性雰囲気下または真空下で脱バインダーするステップと、
k)高温、好ましくは1500〜1700℃において、不活性雰囲気下または真空下で焼結するステップと、
を含む後処理段階を追加的に行うことができる。
MoSi2、Mo−Si−B合金、またはそれらの組み合わせからなる群から選択されるケイ化物、
Si3N4、および
酸化イットリウム、酸化セリウム、およびそれらの組み合わせからなる群から選択される少なくとも1種の酸化物、
を含み、
0.5%未満の気孔率、4〜5g/cm3の密度、方向性凝固した結晶粒構造、および50〜150μmの平均結晶粒径を有する。
2 レーザビーム
3 粉末
4 構築プラットフォーム
5 溶融部
6 ブレード
Claims (15)
- Mo、B、W、Nb、Ta、Ti、Cr、Co、Y、またはそれらの組み合わせのケイ化物、
Si3N4、および
酸化イットリウム、酸化セリウム、およびそれらの組み合わせからなる群から選択される少なくとも1種の酸化物、
を含むケイ化物系複合材料。 - 少なくとも35重量%のケイ化物、
15〜45重量%のSi3N4、
0.5〜15重量%の少なくとも1種の酸化物、
4重量%までの不純物、
を含む、請求項1に記載の材料。 - 前記ケイ化物が、MoSi2、Mo5SiB2、Mo3Si、Mo5SiB2、α−Mo−Mo5SiB2−Mo3Si、WSi2、NbSi2、TaSi2、TiSi2、CrSi2、CoSi2、YSi2、Mo5Si3、Ti5Si3、およびそれらの組み合わせからなる群から選択される、請求項1または2に記載の材料。
- 20〜40重量%のSi3N4、
0.5〜8重量%のY2O3、
0.5〜6重量%のCeO2、
4重量%までの不純物、
を含み、前記不純物がAl、C、Fe、Ca、O、N、またはそれらの組み合わせを含む、請求項1乃至3のいずれか1項に記載の材料。 - 20〜40重量%のSi3N4、
0.5〜6重量%のY2O3、
0.5〜4重量%のCeO2、
<0.1重量%のAl、
<0.5重量%のC、
<0.1重量%のFe、
<0.1重量%のCa、
<1.5重量%のO、
<0.5重量%のN、
を含み、
残りがMoSi2である、請求項1乃至4のいずれか1項に記載の材料。 - i)ケイ化物、Si3N4および少なくとも1種の酸化物の粉末(3)を提供するステップと、
ii)前記粉末(3)を均一にブレンドするステップと、
iii)ブレンド粉末(3)の少なくとも第1の層を支持体表面上に置くステップと、
iv)150〜1000Wのエネルギー出力を有する電源を起動することによって、前記粉末(3)の少なくとも一部を溶融させるステップと、
v)前記溶融させた粉末(3)を冷却固化させて、ケイ化物系複合材料を得るステップと、
を含む、請求項1に記載のケイ化物系複合材料の製造方法。 - ステップiv)が、直接金属レーザ溶融(DMLM)、選択的レーザ溶融(SLM)、選択的レーザ焼結(SLS)、レーザ金属成形(LMF)または電子ビーム溶融(EBM)によって行われる、請求項6に記載の方法。
- ステップiv)が、直接金属レーザ溶融(DMLM)により、約300Wのエネルギー出力で行われる、請求項7に記載の方法。
- vi)ステップv)で得られたケイ化物系複合材料上に、少なくとも部分的に前記材料表面を覆う、ブレンド粉末(3)の第2の層を置くステップと、
vii)ステップiv)およびv)を繰り返し、ステップv)のケイ化物系複合材料に付着する前記ケイ化物系複合材料の第2の層を得るステップと、ならびに場合により、
viii)ステップvi)およびvii)を繰り返し、前記ケイ化物系複合材料の所望の厚さおよび形状が達成されるまで、ブレンド粉末(3)の第3の層、およびさらなる層を置くステップ、
をさらに含む、請求項6乃至8のいずれか1項に記載の方法。 - Mo、B、W、Nb、Ta、Ti、Cr、Co、Y、またはそれらの組み合わせのケイ化物、
Si3N4、および
酸化イットリウム、酸化セリウムおよびそれらの組み合わせからなる群から選択される少なくとも1種の酸化物、
を含み、
0.5%未満の気孔率、4〜5g/cm3の密度、方向性凝固した結晶粒構造、および50〜150μmの平均結晶粒径を有する、請求項6の方法によって得ることができる、ケイ化物系複合材料。 - 23℃において700MPa超、900℃において550MPa超の最高抗張力(UTS)を有する、請求項10に記載の材料。
- 23℃において300GPa超、900℃において290MPa超のヤング率(E)を有する、請求項10または11に記載の材料。
- 23℃において5MPa/m超、900℃において10MPa/m超の応力拡大係数(Kc)の臨界値を有する、請求項10乃至12のいずれか1項に記載の材料。
- α−Si3N4およびβ−Si3N4を含み、後者が針状である、請求項10乃至13のいずれか1項に記載の材料。
- 請求項1乃至5および10乃至14のいずれか1項に記載の材料から作られるバケット、ノズルまたはシュラウドである、ガスタービン高温ガス流路(HGP)部品。
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