JP2018515408A - クロロシランを調製するための流動床反応器 - Google Patents
クロロシランを調製するための流動床反応器 Download PDFInfo
- Publication number
- JP2018515408A JP2018515408A JP2017548123A JP2017548123A JP2018515408A JP 2018515408 A JP2018515408 A JP 2018515408A JP 2017548123 A JP2017548123 A JP 2017548123A JP 2017548123 A JP2017548123 A JP 2017548123A JP 2018515408 A JP2018515408 A JP 2018515408A
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- JP
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- Prior art keywords
- fluidized bed
- reactor
- cement
- silicon
- bed reactor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000005046 Chlorosilane Substances 0.000 title claims abstract description 16
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000002184 metal Substances 0.000 claims abstract description 50
- 239000004568 cement Substances 0.000 claims abstract description 36
- 239000002245 particle Substances 0.000 claims abstract description 23
- 239000000919 ceramic Substances 0.000 claims abstract description 17
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 15
- 239000010959 steel Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims description 39
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 36
- 239000005052 trichlorosilane Substances 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 27
- 229910052710 silicon Inorganic materials 0.000 claims description 27
- 239000010703 silicon Substances 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 24
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 19
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 19
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 15
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 10
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims description 8
- 239000000725 suspension Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 4
- 229910052582 BN Inorganic materials 0.000 claims description 4
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 4
- 230000000996 additive effect Effects 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 22
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 16
- 239000005049 silicon tetrachloride Substances 0.000 description 16
- 239000011257 shell material Substances 0.000 description 14
- 239000004570 mortar (masonry) Substances 0.000 description 12
- 229910052759 nickel Inorganic materials 0.000 description 10
- 238000007747 plating Methods 0.000 description 10
- 238000002360 preparation method Methods 0.000 description 10
- 239000003054 catalyst Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 239000011856 silicon-based particle Substances 0.000 description 8
- 239000006227 byproduct Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000005299 abrasion Methods 0.000 description 4
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000002923 metal particle Substances 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000013127 simulated treatment comparison Methods 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 4
- 229910000851 Alloy steel Inorganic materials 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 239000010962 carbon steel Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 229910021360 copper silicide Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000004821 distillation Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910000856 hastalloy Inorganic materials 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 229910001293 incoloy Inorganic materials 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 238000003763 carbonization Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
- C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
- C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
- C01B33/10763—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane from silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/02—Apparatus characterised by being constructed of material selected for its chemically-resistant properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
- B01J8/18—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with fluidised particles
- B01J8/1872—Details of the fluidised bed reactor
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
- C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
- C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/02—Apparatus characterised by their chemically-resistant properties
- B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/02—Apparatus characterised by their chemically-resistant properties
- B01J2219/0204—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components
- B01J2219/0218—Apparatus characterised by their chemically-resistant properties comprising coatings on the surfaces in direct contact with the reactive components of ceramic
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Silicon Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
Abstract
Description
A)Si+3HCl→SiHCl3+H2+副生成物
B)Si+3SiCl4+2H2→4SiHCl3+副生成物
C)SiCl4+H2→SiHCl3+HCl+副生成物
A)Si+3HCl→SiHCl3+H2+副生成物
B)Si+3SiCl4+2H2→4SiHCl3+副生成物
C)SiCl4+H2→SiHCl3+HCl+副生成物
Claims (11)
- 鋼で製造された反応器シェルを含み、反応器シェルの内壁がその上に溶接されたエキスパンドメタルを有し、エキスパンドメタルはそのエキスパンドメタルに適用された、セラミック粒子を含むセメントを有することを特徴とする、クロロシラン調製用流動床反応器。
- セラミック粒子は、炭化ケイ素、窒化ケイ素、窒化ホウ素、酸化ジルコニウムおよび窒化アルミニウムからなる群から選択される材料で製造される請求項1に記載の流動床反応器。
- セメントは、SiO2、Al2O3、TiO2、Cr6+およびFe2O3からなる群から選択される1つ以上の添加剤を含む請求項1または請求項2に記載の流動床反応器。
- セメントは5から50mmの層厚さを有する請求項1から3のいずれか一項に記載の流動床反応器。
- エキスパンドメタルを鋼表面に溶接し、セラミック粒子を含むセメントを水と混合して懸濁液を生成し、混合セメントを鋼表面に適用し、セメントを10から30日間乾燥させ、硬化させることを含む、流動床反応器の鋼表面に摩耗保護材を適用する方法。
- セラミック粒子は、炭化ケイ素、窒化ケイ素、窒化ホウ素、酸化ジルコニウムおよび窒化アルミニウムからなる群から選択される材料で製造される請求項5に記載の方法。
- セメントは、SiO2、Al2O3、TiO2、Cr6+(例えば、CrO3)およびFe2O3からなる群から選択される1つ以上の添加剤を含む請求項5または請求項6に記載の方法。
- セメントは5から50mmの層厚さを有する請求項5から7のいずれか一項に記載の方法。
- 流動床内で粉砕された金属シリコンを塩化水素と反応させてテトラクロロシランおよびトリクロロシランを提供することによって、または流動床内で粉砕された金属シリコンをテトラクロロシランおよび水素と反応させてトリクロロシランを提供することによって、クロロシランを調製する方法であって、反応は請求項1から4のいずれか一項に記載の流動床反応器内で実施される該方法。
- 流動床反応器は1から30バールの圧力で操作される請求項9に記載の方法。
- 反応は300から600℃の温度で実施される請求項9または請求項10に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102015205727.5A DE102015205727A1 (de) | 2015-03-30 | 2015-03-30 | Wirbelschichtreaktor zur Herstellung von Chlorsilanen |
DE102015205727.5 | 2015-03-30 | ||
PCT/EP2016/055723 WO2016156047A1 (de) | 2015-03-30 | 2016-03-16 | Wirbelschichtreaktor zur herstellung von chlorsilanen |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018515408A true JP2018515408A (ja) | 2018-06-14 |
JP6426300B2 JP6426300B2 (ja) | 2018-11-21 |
Family
ID=55538242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017548123A Active JP6426300B2 (ja) | 2015-03-30 | 2016-03-16 | クロロシランを調製するための流動床反応器 |
Country Status (10)
Country | Link |
---|---|
US (1) | US10647583B2 (ja) |
EP (1) | EP3277628B1 (ja) |
JP (1) | JP6426300B2 (ja) |
KR (1) | KR102013431B1 (ja) |
CN (1) | CN107250039B (ja) |
CA (1) | CA2974238C (ja) |
DE (1) | DE102015205727A1 (ja) |
MY (1) | MY184624A (ja) |
TW (1) | TWI654027B (ja) |
WO (1) | WO2016156047A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108069428B (zh) * | 2016-11-18 | 2023-10-10 | 江苏中能硅业科技发展有限公司 | 用于处理多晶硅副产渣浆的装置和工艺 |
FR3075776B1 (fr) * | 2017-12-21 | 2020-10-02 | Rosi | Granules de silicium pour la preparation de trichlorosilane et procede de fabrication associe |
US11845667B2 (en) | 2018-04-18 | 2023-12-19 | Wacker Chemie Ag | Method for producing chlorosilanes |
KR102607348B1 (ko) * | 2018-12-18 | 2023-11-29 | 와커 헤미 아게 | 클로로실란을 제조하는 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002031275A (ja) * | 2000-07-12 | 2002-01-31 | Babcock Hitachi Kk | 耐摩耗用二重管 |
JP2010503530A (ja) * | 2006-09-19 | 2010-02-04 | ビーエーエスエフ ソシエタス・ヨーロピア | ガス相反応を行うための流動床反応器 |
JP2011184243A (ja) * | 2010-03-09 | 2011-09-22 | Jnc Corp | クロロシランの製造装置 |
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JPS4945463B1 (ja) * | 1969-01-24 | 1974-12-04 | ||
US4059544A (en) * | 1972-08-10 | 1977-11-22 | Fujimi Kenmazai Kogyo Kabushiki Kaisha | Active material compositions with porous protective sheath and method for preparing |
US4092446A (en) | 1974-07-31 | 1978-05-30 | Texas Instruments Incorporated | Process of refining impure silicon to produce purified electronic grade silicon |
DE3739578A1 (de) * | 1986-11-25 | 1988-11-03 | Huels Troisdorf | Zyklon bei der herstellung von chlorsilanen |
DE3640172C1 (en) | 1986-11-25 | 1988-08-18 | Huels Troisdorf | Reactor of nickel-containing material for reacting granular Si-metal-containing material with hydrogen chloride to form chlorosilanes |
CN1153138A (zh) * | 1995-09-21 | 1997-07-02 | 瓦克化学有限公司 | 制备三氯硅烷的方法 |
DE19654154A1 (de) * | 1995-12-25 | 1997-06-26 | Tokuyama Corp | Verfahren zur Herstellung von Trichlorsilan |
DE10063863A1 (de) * | 2000-12-21 | 2003-07-10 | Solarworld Ag | Wirbelbettreaktor für die Trichlorsilansynthese |
US7935236B2 (en) * | 2002-05-09 | 2011-05-03 | The United States Of America As Represented By The Secretary Of The Army | Electro-osmotic pulse (EOP) treatment method |
CN2779197Y (zh) * | 2005-02-03 | 2006-05-10 | 西安建筑科技大学 | 三元复合材料内衬耐磨管 |
KR100783667B1 (ko) | 2006-08-10 | 2007-12-07 | 한국화학연구원 | 입자형 다결정 실리콘의 제조방법 및 제조장치 |
EP2111524B1 (en) | 2007-01-17 | 2011-03-23 | Dow Corning Corporation | Wear resistant materials in the direct process |
US7754175B2 (en) | 2007-08-29 | 2010-07-13 | Dynamic Engineering, Inc. | Silicon and catalyst material preparation in a process for producing trichlorosilane |
US8168123B2 (en) | 2009-02-26 | 2012-05-01 | Siliken Chemicals, S.L. | Fluidized bed reactor for production of high purity silicon |
US9662627B2 (en) * | 2011-10-28 | 2017-05-30 | Uop Llc | Riser reactor with flow disruptors |
WO2013138461A1 (en) | 2012-03-14 | 2013-09-19 | Centrotherm Photovoltaics Usa, Inc. | Trichlorosilane production |
FR2993201B1 (fr) | 2012-07-10 | 2014-08-08 | Total Raffinage Marketing | Procede de realisation d'un revetement anti erosion sur une paroi interne d'une enceinte d'unite fcc et structure d'ancrage pour la realisation de ce revetement. |
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2015
- 2015-03-30 DE DE102015205727.5A patent/DE102015205727A1/de not_active Withdrawn
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2016
- 2016-03-16 CA CA2974238A patent/CA2974238C/en not_active Expired - Fee Related
- 2016-03-16 MY MYPI2017001104A patent/MY184624A/en unknown
- 2016-03-16 CN CN201680009692.3A patent/CN107250039B/zh active Active
- 2016-03-16 US US15/562,660 patent/US10647583B2/en active Active
- 2016-03-16 EP EP16710197.1A patent/EP3277628B1/de active Active
- 2016-03-16 JP JP2017548123A patent/JP6426300B2/ja active Active
- 2016-03-16 KR KR1020177022519A patent/KR102013431B1/ko active IP Right Grant
- 2016-03-16 WO PCT/EP2016/055723 patent/WO2016156047A1/de active Application Filing
- 2016-03-24 TW TW105109112A patent/TWI654027B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2002031275A (ja) * | 2000-07-12 | 2002-01-31 | Babcock Hitachi Kk | 耐摩耗用二重管 |
JP2010503530A (ja) * | 2006-09-19 | 2010-02-04 | ビーエーエスエフ ソシエタス・ヨーロピア | ガス相反応を行うための流動床反応器 |
JP2011184243A (ja) * | 2010-03-09 | 2011-09-22 | Jnc Corp | クロロシランの製造装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20170105061A (ko) | 2017-09-18 |
TW201634113A (zh) | 2016-10-01 |
CN107250039B (zh) | 2019-08-06 |
EP3277628B1 (de) | 2019-05-08 |
CA2974238C (en) | 2019-05-21 |
TWI654027B (zh) | 2019-03-21 |
JP6426300B2 (ja) | 2018-11-21 |
US20180105427A1 (en) | 2018-04-19 |
US10647583B2 (en) | 2020-05-12 |
DE102015205727A1 (de) | 2016-10-06 |
WO2016156047A1 (de) | 2016-10-06 |
MY184624A (en) | 2021-04-09 |
EP3277628A1 (de) | 2018-02-07 |
CA2974238A1 (en) | 2016-10-06 |
KR102013431B1 (ko) | 2019-08-22 |
CN107250039A (zh) | 2017-10-13 |
WO2016156047A8 (de) | 2017-07-13 |
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