JP2018513356A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2018513356A5 JP2018513356A5 JP2017546069A JP2017546069A JP2018513356A5 JP 2018513356 A5 JP2018513356 A5 JP 2018513356A5 JP 2017546069 A JP2017546069 A JP 2017546069A JP 2017546069 A JP2017546069 A JP 2017546069A JP 2018513356 A5 JP2018513356 A5 JP 2018513356A5
- Authority
- JP
- Japan
- Prior art keywords
- sample
- electromagnetic radiation
- arrangement according
- sequence
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005670 electromagnetic radiation Effects 0.000 claims 13
- 238000011156 evaluation Methods 0.000 claims 7
- 230000003287 optical effect Effects 0.000 claims 6
- 230000001419 dependent effect Effects 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 238000010521 absorption reaction Methods 0.000 claims 3
- 238000001514 detection method Methods 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 238000005259 measurement Methods 0.000 claims 3
- 230000005855 radiation Effects 0.000 claims 3
- 238000011088 calibration curve Methods 0.000 claims 2
- 230000006978 adaptation Effects 0.000 claims 1
- 239000002800 charge carrier Substances 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 230000010287 polarization Effects 0.000 claims 1
- 238000010183 spectrum analysis Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015203807.6 | 2015-03-03 | ||
| DE102015203807 | 2015-03-03 | ||
| DE102015208026.9A DE102015208026A1 (de) | 2015-03-03 | 2015-04-30 | Anordnung zur ortsaufgelösten Bestimmung des spezifischen elektrischen Widerstands und/oder der spezifischen elektrischen Leitfähigkeit von Proben |
| DE102015208026.9 | 2015-04-30 | ||
| PCT/EP2016/054398 WO2016139233A1 (de) | 2015-03-03 | 2016-03-02 | Anordnung zur ortsaufgelösten bestimmung des spezifischen elektrischen widerstands und/oder der spezifischen elektrischen leitfähigkeit von proben |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018513356A JP2018513356A (ja) | 2018-05-24 |
| JP2018513356A5 true JP2018513356A5 (enExample) | 2019-04-04 |
| JP6778691B2 JP6778691B2 (ja) | 2020-11-04 |
Family
ID=56738764
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017546069A Active JP6778691B2 (ja) | 2015-03-03 | 2016-03-02 | 試料の比電気抵抗及び／又は比導電率の空間分解測定のための配置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10466274B2 (enExample) |
| JP (1) | JP6778691B2 (enExample) |
| DE (1) | DE102015208026A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111103511B (zh) * | 2019-11-07 | 2021-06-15 | 国网冀北电力有限公司电力科学研究院 | 电介质状态分析方法、系统、计算机及存储介质 |
| CN111856150B (zh) * | 2020-08-18 | 2024-02-02 | 中电科思仪科技股份有限公司 | 一种准光腔介电常数测试随频率变化误差修正方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5360973A (en) * | 1990-02-22 | 1994-11-01 | Innova Laboratories, Inc. | Millimeter wave beam deflector |
| JPH03292780A (ja) | 1990-04-11 | 1991-12-24 | Fujitsu Ltd | 超伝導体の特性評価方法およびこれに用いた超伝導体薄膜の成長方法および装置 |
| DE4412238A1 (de) * | 1994-04-05 | 1994-08-25 | Matthias Rottmann | Optische Meßanordnung zur schnellen, kontaktlosen und zerstörungsfreien Bestimmung charakteristischer Halbleiterparameter |
| US6485872B1 (en) | 1999-12-03 | 2002-11-26 | Mks Instruments, Inc. | Method and apparatus for measuring the composition and other properties of thin films utilizing infrared radiation |
| JP4476462B2 (ja) * | 2000-03-27 | 2010-06-09 | 株式会社栃木ニコン | 半導体の電気特性評価装置 |
| US6873163B2 (en) * | 2001-01-18 | 2005-03-29 | The Trustees Of The University Of Pennsylvania | Spatially resolved electromagnetic property measurement |
| US6734974B2 (en) * | 2001-01-25 | 2004-05-11 | Rensselaer Polytechnic Institute | Terahertz imaging with dynamic aperture |
| JP4481967B2 (ja) * | 2005-09-05 | 2010-06-16 | キヤノン株式会社 | センサ装置 |
| JP4845014B2 (ja) | 2006-05-08 | 2011-12-28 | 島根県 | 金属材料の表面処理における処理状態のリアルタイム測定方法 |
| US20100006785A1 (en) * | 2008-07-14 | 2010-01-14 | Moshe Finarov | Method and apparatus for thin film quality control |
| JP5426177B2 (ja) | 2009-01-09 | 2014-02-26 | 株式会社東芝 | シミュレーション方法、シミュレーション装置及びシミュレーションプログラム |
| JP5534315B2 (ja) | 2010-03-01 | 2014-06-25 | 独立行政法人理化学研究所 | 物性測定装置、物性測定方法及びプログラム |
| WO2012010647A1 (en) * | 2010-07-21 | 2012-01-26 | Imec | Method for determining an active dopant profile |
| CN103477215B (zh) | 2011-04-13 | 2015-07-29 | 3M创新有限公司 | 检测挥发性有机化合物的方法 |
| US8927933B1 (en) | 2012-02-16 | 2015-01-06 | The United States Of America As Represented By The Secretary Of The Navy | Dual-band wide-angle absorber/thermal emitter |
| JP6023485B2 (ja) * | 2012-07-06 | 2016-11-09 | 大塚電子株式会社 | 光学特性測定システムおよび光学特性測定方法 |
| WO2014138660A1 (en) * | 2013-03-08 | 2014-09-12 | Bruker Nano, Inc. | Method and apparatus of physical property measurement using a probe-based nano-localized light source |
-
2015
- 2015-04-30 DE DE102015208026.9A patent/DE102015208026A1/de not_active Ceased
-
2016
- 2016-03-02 JP JP2017546069A patent/JP6778691B2/ja active Active
- 2016-03-02 US US15/555,116 patent/US10466274B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES2966745T3 (es) | Inspección de calidad de materiales de película fina | |
| TW201740096A (zh) | 用於在透明片上的光學測量之系統及方法 | |
| JP4796160B2 (ja) | 薄膜の検査装置及び検査方法 | |
| US20120182545A1 (en) | Method and device for measuring optical characteristic variables of transparent, scattering measurement objects | |
| US9903762B2 (en) | Pyrometric detection device, method for calibrating the same, and apparatus for producing three-dimensional work pieces | |
| JP2017518440A (ja) | 防眩サファイア材料を製造するための一価及び／又は多価ガスイオンビーム処理方法 | |
| WO2014028407A1 (en) | Surface features characterization | |
| CN103364374B (zh) | 用于检查石墨烯板的设备和方法 | |
| JP2012254194A5 (enExample) | ||
| JP6144684B2 (ja) | テラヘルツ波検出素子とその作製方法および観察装置 | |
| Kakil et al. | Effects of a low dose of gamma radiation on the morphology, and the optical and the electrical properties of an ITO thin film as an electrode for solar cell applications | |
| JP2018513356A5 (enExample) | ||
| US10228329B2 (en) | Arrangement for determining properties and/or parameters of a sample and/or of at least one film formed on the surface of a sample | |
| Kabacelik et al. | γ irradiation induced effects on the TCO thin films | |
| JP6778691B2 (ja) | 試料の比電気抵抗及び／又は比導電率の空間分解測定のための配置 | |
| JP5693749B2 (ja) | 光透過性導電性フィルム及び光透過性導電性フィルムを含有するタッチパネル | |
| WO2016139233A1 (de) | Anordnung zur ortsaufgelösten bestimmung des spezifischen elektrischen widerstands und/oder der spezifischen elektrischen leitfähigkeit von proben | |
| Contalbrigo et al. | Aerogel mass production for the CLAS12 RICH: Novel characterization methods and optical performance | |
| CN102384783A (zh) | 一种高能激光半积分球阵列衰减器 | |
| Fried et al. | Expanded beam (macro-imaging) ellipsometry | |
| US9891041B2 (en) | Apparatus and method for measuring thickness of transparent and/or translucent mediums using a reflecting signal that is normal or near normal to the mediums | |
| JP4831814B2 (ja) | 透明導電膜評価装置及び透明導電膜の評価方法 | |
| Major et al. | Application of wide angle beam spectroscopic ellipsometry for quality control in solar cell production | |
| Yang et al. | Simulation of Optical Properties of the Si/SiO 2/Al Interface at the Rear of Industrially Fabricated Si Solar Cells | |
| JP6708756B2 (ja) | ソーラーモジュールに分離溝を形成するレーザースクライビング過程の監視方法 |