JP6778691B2 - 試料の比電気抵抗及び/又は比導電率の空間分解測定のための配置 - Google Patents

試料の比電気抵抗及び/又は比導電率の空間分解測定のための配置 Download PDF

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JP6778691B2
JP6778691B2 JP2017546069A JP2017546069A JP6778691B2 JP 6778691 B2 JP6778691 B2 JP 6778691B2 JP 2017546069 A JP2017546069 A JP 2017546069A JP 2017546069 A JP2017546069 A JP 2017546069A JP 6778691 B2 JP6778691 B2 JP 6778691B2
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sample
electromagnetic radiation
sequence
arrangement according
detector
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JP2018513356A5 (enExample
JP2018513356A (ja
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フィリップ ヴォールマン
フィリップ ヴォールマン
ヴルフ グレーレルト
ヴルフ グレーレルト
エリック ヴァイセンボルン
エリック ヴァイセンボルン
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フラウンホッファー−ゲゼルシャフト・ツァー・フォデラング・デル・アンゲワンテン・フォーシュング・エー.ファウ.
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Priority claimed from PCT/EP2016/054398 external-priority patent/WO2016139233A1/de
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Publication of JP2018513356A5 publication Critical patent/JP2018513356A5/ja
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/07Non contact-making probes
    • G01R1/071Non contact-making probes containing electro-optic elements
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/8422Investigating thin films, e.g. matrix isolation method
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2617Measuring dielectric properties, e.g. constants
    • G01R27/2682Measuring dielectric properties, e.g. constants using optical methods or electron beams
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/8422Investigating thin films, e.g. matrix isolation method
    • G01N2021/8438Mutilayers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Mathematical Physics (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Measurement Of Resistance Or Impedance (AREA)
JP2017546069A 2015-03-03 2016-03-02 試料の比電気抵抗及び/又は比導電率の空間分解測定のための配置 Active JP6778691B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102015203807.6 2015-03-03
DE102015203807 2015-03-03
DE102015208026.9A DE102015208026A1 (de) 2015-03-03 2015-04-30 Anordnung zur ortsaufgelösten Bestimmung des spezifischen elektrischen Widerstands und/oder der spezifischen elektrischen Leitfähigkeit von Proben
DE102015208026.9 2015-04-30
PCT/EP2016/054398 WO2016139233A1 (de) 2015-03-03 2016-03-02 Anordnung zur ortsaufgelösten bestimmung des spezifischen elektrischen widerstands und/oder der spezifischen elektrischen leitfähigkeit von proben

Publications (3)

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JP2018513356A JP2018513356A (ja) 2018-05-24
JP2018513356A5 JP2018513356A5 (enExample) 2019-04-04
JP6778691B2 true JP6778691B2 (ja) 2020-11-04

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US (1) US10466274B2 (enExample)
JP (1) JP6778691B2 (enExample)
DE (1) DE102015208026A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111103511B (zh) * 2019-11-07 2021-06-15 国网冀北电力有限公司电力科学研究院 电介质状态分析方法、系统、计算机及存储介质
CN111856150B (zh) * 2020-08-18 2024-02-02 中电科思仪科技股份有限公司 一种准光腔介电常数测试随频率变化误差修正方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5360973A (en) * 1990-02-22 1994-11-01 Innova Laboratories, Inc. Millimeter wave beam deflector
JPH03292780A (ja) 1990-04-11 1991-12-24 Fujitsu Ltd 超伝導体の特性評価方法およびこれに用いた超伝導体薄膜の成長方法および装置
DE4412238A1 (de) * 1994-04-05 1994-08-25 Matthias Rottmann Optische Meßanordnung zur schnellen, kontaktlosen und zerstörungsfreien Bestimmung charakteristischer Halbleiterparameter
US6485872B1 (en) 1999-12-03 2002-11-26 Mks Instruments, Inc. Method and apparatus for measuring the composition and other properties of thin films utilizing infrared radiation
JP4476462B2 (ja) * 2000-03-27 2010-06-09 株式会社栃木ニコン 半導体の電気特性評価装置
US6873163B2 (en) * 2001-01-18 2005-03-29 The Trustees Of The University Of Pennsylvania Spatially resolved electromagnetic property measurement
US6734974B2 (en) * 2001-01-25 2004-05-11 Rensselaer Polytechnic Institute Terahertz imaging with dynamic aperture
JP4481967B2 (ja) * 2005-09-05 2010-06-16 キヤノン株式会社 センサ装置
JP4845014B2 (ja) 2006-05-08 2011-12-28 島根県 金属材料の表面処理における処理状態のリアルタイム測定方法
US20100006785A1 (en) * 2008-07-14 2010-01-14 Moshe Finarov Method and apparatus for thin film quality control
JP5426177B2 (ja) 2009-01-09 2014-02-26 株式会社東芝 シミュレーション方法、シミュレーション装置及びシミュレーションプログラム
JP5534315B2 (ja) 2010-03-01 2014-06-25 独立行政法人理化学研究所 物性測定装置、物性測定方法及びプログラム
WO2012010647A1 (en) * 2010-07-21 2012-01-26 Imec Method for determining an active dopant profile
CN103477215B (zh) 2011-04-13 2015-07-29 3M创新有限公司 检测挥发性有机化合物的方法
US8927933B1 (en) 2012-02-16 2015-01-06 The United States Of America As Represented By The Secretary Of The Navy Dual-band wide-angle absorber/thermal emitter
JP6023485B2 (ja) * 2012-07-06 2016-11-09 大塚電子株式会社 光学特性測定システムおよび光学特性測定方法
WO2014138660A1 (en) * 2013-03-08 2014-09-12 Bruker Nano, Inc. Method and apparatus of physical property measurement using a probe-based nano-localized light source

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US20180045758A1 (en) 2018-02-15
JP2018513356A (ja) 2018-05-24
DE102015208026A1 (de) 2016-09-08
US10466274B2 (en) 2019-11-05

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