JP2018509757A5 - - Google Patents
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- Publication number
- JP2018509757A5 JP2018509757A5 JP2017541645A JP2017541645A JP2018509757A5 JP 2018509757 A5 JP2018509757 A5 JP 2018509757A5 JP 2017541645 A JP2017541645 A JP 2017541645A JP 2017541645 A JP2017541645 A JP 2017541645A JP 2018509757 A5 JP2018509757 A5 JP 2018509757A5
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- dvc
- conductive layer
- ohmic contact
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 3
- 229910019899 RuO Inorganic materials 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 2
- 229910052741 iridium Inorganic materials 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052697 platinum Inorganic materials 0.000 claims 2
- 229910052703 rhodium Inorganic materials 0.000 claims 2
- 229910052707 ruthenium Inorganic materials 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000003990 capacitor Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562112217P | 2015-02-05 | 2015-02-05 | |
| US62/112,217 | 2015-02-05 | ||
| PCT/US2016/015360 WO2016126517A1 (en) | 2015-02-05 | 2016-01-28 | Dvc utilizing mims in the anchor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018509757A JP2018509757A (ja) | 2018-04-05 |
| JP2018509757A5 true JP2018509757A5 (enExample) | 2018-10-11 |
| JP7021947B2 JP7021947B2 (ja) | 2022-02-17 |
Family
ID=55315786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017541645A Active JP7021947B2 (ja) | 2015-02-05 | 2016-01-28 | アンカー中のｍｉｍｓを使用するｄｖｃ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10163566B2 (enExample) |
| EP (1) | EP3254294B1 (enExample) |
| JP (1) | JP7021947B2 (enExample) |
| KR (1) | KR102554425B1 (enExample) |
| CN (1) | CN107430963B (enExample) |
| WO (1) | WO2016126517A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3520129B1 (en) * | 2016-09-29 | 2021-01-20 | Cavendish Kinetics Inc. | Mems rf-switch with near-zero impact landing |
| US11705298B2 (en) * | 2019-06-22 | 2023-07-18 | Qorvo Us, Inc. | Flexible MEMS device having hinged sections |
| US11746002B2 (en) | 2019-06-22 | 2023-09-05 | Qorvo Us, Inc. | Stable landing above RF conductor in MEMS device |
| US11667516B2 (en) | 2019-06-26 | 2023-06-06 | Qorvo Us, Inc. | MEMS device having uniform contacts |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6657525B1 (en) * | 2002-05-31 | 2003-12-02 | Northrop Grumman Corporation | Microelectromechanical RF switch |
| US7265647B2 (en) * | 2004-03-12 | 2007-09-04 | The Regents Of The University Of California | High isolation tunable MEMS capacitive switch |
| US20070278075A1 (en) * | 2004-07-29 | 2007-12-06 | Akihisa Terano | Capacitance Type Mems Device, Manufacturing Method Thereof, And High Frequency Device |
| CN100403476C (zh) * | 2004-09-27 | 2008-07-16 | 东南大学 | 射频微电子机械单刀双掷膜开关及其制造方法 |
| WO2007041431A1 (en) * | 2005-10-03 | 2007-04-12 | Analog Devices, Inc. | Mems switch contact system |
| KR101752011B1 (ko) * | 2008-11-07 | 2017-06-28 | 카벤디시 키네틱스, 인크. | 더 큰 ｍｅｍｓ 디바이스를 대체하기 위해 복수의 더 작은 ｍｅｍｓ 디바이스를 이용하는 방법 |
| JP2010135614A (ja) * | 2008-12-05 | 2010-06-17 | Fujitsu Ltd | 可変容量素子 |
| JP5304398B2 (ja) * | 2009-04-06 | 2013-10-02 | 富士通株式会社 | 可変容量素子 |
| JP5208867B2 (ja) * | 2009-06-25 | 2013-06-12 | 株式会社東芝 | Ｍｅｍｓデバイス及びその製造方法 |
| US8865497B2 (en) * | 2010-06-25 | 2014-10-21 | International Business Machines Corporation | Planar cavity MEMS and related structures, methods of manufacture and design structures |
| US8797127B2 (en) * | 2010-11-22 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS switch with reduced dielectric charging effect |
| US9076808B2 (en) | 2011-09-02 | 2015-07-07 | Cavendish Kinetics, Inc. | RF MEMS isolation, series and shunt DVC, and small MEMS |
| WO2014038086A1 (ja) * | 2012-09-10 | 2014-03-13 | 富士通株式会社 | 可変容量回路及びインピーダンス整合回路 |
| CN105122402B (zh) * | 2013-04-04 | 2018-12-07 | 卡文迪什动力有限公司 | 具有高线性度的mems数字可变电容器设计 |
| JP2015001459A (ja) * | 2013-06-17 | 2015-01-05 | セイコーエプソン株式会社 | 機能素子、電子機器、および移動体 |
| CN105556635B (zh) * | 2013-08-01 | 2018-01-26 | 卡文迪什动力有限公司 | 利用mems电阻开关和mim电容器的dvc |
| CN104037027B (zh) * | 2014-06-26 | 2016-02-03 | 电子科技大学 | 一种mems电容开关 |
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2016
- 2016-01-28 EP EP16703698.7A patent/EP3254294B1/en active Active
- 2016-01-28 US US15/548,992 patent/US10163566B2/en active Active
- 2016-01-28 CN CN201680014343.0A patent/CN107430963B/zh active Active
- 2016-01-28 JP JP2017541645A patent/JP7021947B2/ja active Active
- 2016-01-28 WO PCT/US2016/015360 patent/WO2016126517A1/en not_active Ceased
- 2016-01-28 KR KR1020177024832A patent/KR102554425B1/ko active Active