JP2018509757A5 - - Google Patents

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Publication number
JP2018509757A5
JP2018509757A5 JP2017541645A JP2017541645A JP2018509757A5 JP 2018509757 A5 JP2018509757 A5 JP 2018509757A5 JP 2017541645 A JP2017541645 A JP 2017541645A JP 2017541645 A JP2017541645 A JP 2017541645A JP 2018509757 A5 JP2018509757 A5 JP 2018509757A5
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JP
Japan
Prior art keywords
electrode
dvc
conductive layer
ohmic contact
insulating layer
Prior art date
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Application number
JP2017541645A
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English (en)
Japanese (ja)
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JP7021947B2 (ja
JP2018509757A (ja
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Priority claimed from PCT/US2016/015360 external-priority patent/WO2016126517A1/en
Publication of JP2018509757A publication Critical patent/JP2018509757A/ja
Publication of JP2018509757A5 publication Critical patent/JP2018509757A5/ja
Application granted granted Critical
Publication of JP7021947B2 publication Critical patent/JP7021947B2/ja
Active legal-status Critical Current
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JP2017541645A 2015-02-05 2016-01-28 アンカー中のｍｉｍｓを使用するｄｖｃ Active JP7021947B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562112217P 2015-02-05 2015-02-05
US62/112,217 2015-02-05
PCT/US2016/015360 WO2016126517A1 (en) 2015-02-05 2016-01-28 Dvc utilizing mims in the anchor

Publications (3)

Publication Number Publication Date
JP2018509757A JP2018509757A (ja) 2018-04-05
JP2018509757A5 true JP2018509757A5 (enExample) 2018-10-11
JP7021947B2 JP7021947B2 (ja) 2022-02-17

Family

ID=55315786

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017541645A Active JP7021947B2 (ja) 2015-02-05 2016-01-28 アンカー中のｍｉｍｓを使用するｄｖｃ

Country Status (6)

Country Link
US (1) US10163566B2 (enExample)
EP (1) EP3254294B1 (enExample)
JP (1) JP7021947B2 (enExample)
KR (1) KR102554425B1 (enExample)
CN (1) CN107430963B (enExample)
WO (1) WO2016126517A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018063814A1 (en) * 2016-09-29 2018-04-05 Cavendish Kinetics, Inc Mems rf-switch with near-zero impact landing
US11746002B2 (en) 2019-06-22 2023-09-05 Qorvo Us, Inc. Stable landing above RF conductor in MEMS device
US11705298B2 (en) * 2019-06-22 2023-07-18 Qorvo Us, Inc. Flexible MEMS device having hinged sections
US11667516B2 (en) * 2019-06-26 2023-06-06 Qorvo Us, Inc. MEMS device having uniform contacts

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6657525B1 (en) * 2002-05-31 2003-12-02 Northrop Grumman Corporation Microelectromechanical RF switch
US7265647B2 (en) 2004-03-12 2007-09-04 The Regents Of The University Of California High isolation tunable MEMS capacitive switch
JPWO2006011239A1 (ja) 2004-07-29 2008-05-01 株式会社日立メディアエレクトロニクス 容量型ｍｅｍｓ素子とその製造方法、及び高周波装置
CN100403476C (zh) 2004-09-27 2008-07-16 东南大学 射频微电子机械单刀双掷膜开关及其制造方法
JP2009510707A (ja) * 2005-10-03 2009-03-12 アナログ デバイシス， インコーポレイテッド Ｍｅｍｓスイッチ接点システム
WO2010054244A2 (en) * 2008-11-07 2010-05-14 Cavendish Kinetics, Inc. Method of using a plurality of smaller mems devices to replace a larger mems device
JP2010135614A (ja) * 2008-12-05 2010-06-17 Fujitsu Ltd 可変容量素子
JP5304398B2 (ja) * 2009-04-06 2013-10-02 富士通株式会社 可変容量素子
JP5208867B2 (ja) * 2009-06-25 2013-06-12 株式会社東芝 Ｍｅｍｓデバイス及びその製造方法
US8685778B2 (en) * 2010-06-25 2014-04-01 International Business Machines Corporation Planar cavity MEMS and related structures, methods of manufacture and design structures
US8797127B2 (en) * 2010-11-22 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. MEMS switch with reduced dielectric charging effect
JP6067710B2 (ja) * 2011-09-02 2017-01-25 キャベンディッシュ・キネティックス・インコーポレイテッドＣａｖｅｎｄｉｓｈ Ｋｉｎｅｔｉｃｓ， Ｉｎｃ． Ｒｆｍｅｍｓのアイソレーション、直列及びシャントｄｖｃ、及び小型のｍｅｍｓ
JP6107827B2 (ja) * 2012-09-10 2017-04-05 富士通株式会社 可変容量回路及びインピーダンス整合回路
EP2981981B1 (en) * 2013-04-04 2019-02-06 Cavendish Kinetics Inc. Mems digital variable capacitor design with high linearity
JP2015001459A (ja) * 2013-06-17 2015-01-05 セイコーエプソン株式会社 機能素子、電子機器、および移動体
EP3028291B1 (en) * 2013-08-01 2018-04-25 Cavendish Kinetics, Inc. Dvc utilizing mems resistive switches and mim capacitors
CN104037027B (zh) * 2014-06-26 2016-02-03 电子科技大学 一种mems电容开关

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