JP7021947B2 - アンカー中のｍｉｍｓを使用するｄｖｃ - Google Patents
アンカー中のｍｉｍｓを使用するｄｖｃ Download PDFInfo
- Publication number
- JP7021947B2 JP7021947B2 JP2017541645A JP2017541645A JP7021947B2 JP 7021947 B2 JP7021947 B2 JP 7021947B2 JP 2017541645 A JP2017541645 A JP 2017541645A JP 2017541645 A JP2017541645 A JP 2017541645A JP 7021947 B2 JP7021947 B2 JP 7021947B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- contact material
- conductive
- anchor
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000865 membrane-inlet mass spectrometry Methods 0.000 title description 2
- 239000003990 capacitor Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910019899 RuO Inorganic materials 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 229910052707 ruthenium Inorganic materials 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 46
- 239000004020 conductor Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- -1 AiAlN Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/01—Switches
- B81B2201/012—Switches characterised by the shape
- B81B2201/016—Switches characterised by the shape having a bridge fixed on two ends and connected to one or more dimples
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0052—Special contact materials used for MEMS
- H01H2001/0057—Special contact materials used for MEMS the contact materials containing refractory materials, e.g. tungsten
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0084—Switches making use of microelectromechanical systems [MEMS] with perpendicular movement of the movable contact relative to the substrate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Micromachines (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562112217P | 2015-02-05 | 2015-02-05 | |
| US62/112,217 | 2015-02-05 | ||
| PCT/US2016/015360 WO2016126517A1 (en) | 2015-02-05 | 2016-01-28 | Dvc utilizing mims in the anchor |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018509757A JP2018509757A (ja) | 2018-04-05 |
| JP2018509757A5 JP2018509757A5 (enExample) | 2018-10-11 |
| JP7021947B2 true JP7021947B2 (ja) | 2022-02-17 |
Family
ID=55315786
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017541645A Active JP7021947B2 (ja) | 2015-02-05 | 2016-01-28 | アンカー中のｍｉｍｓを使用するｄｖｃ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10163566B2 (enExample) |
| EP (1) | EP3254294B1 (enExample) |
| JP (1) | JP7021947B2 (enExample) |
| KR (1) | KR102554425B1 (enExample) |
| CN (1) | CN107430963B (enExample) |
| WO (1) | WO2016126517A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018063814A1 (en) * | 2016-09-29 | 2018-04-05 | Cavendish Kinetics, Inc | Mems rf-switch with near-zero impact landing |
| US11746002B2 (en) | 2019-06-22 | 2023-09-05 | Qorvo Us, Inc. | Stable landing above RF conductor in MEMS device |
| US11705298B2 (en) * | 2019-06-22 | 2023-07-18 | Qorvo Us, Inc. | Flexible MEMS device having hinged sections |
| US11667516B2 (en) * | 2019-06-26 | 2023-06-06 | Qorvo Us, Inc. | MEMS device having uniform contacts |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005528751A (ja) | 2002-05-31 | 2005-09-22 | ノースロップ グラマン コーポレーション | 微小電気機械スイッチ |
| US20050248423A1 (en) | 2004-03-12 | 2005-11-10 | The Regents Of The University Of California | High isolation tunable MEMS capacitive switch |
| JP2010245276A (ja) | 2009-04-06 | 2010-10-28 | Fujitsu Ltd | 可変容量素子 |
| WO2014165624A1 (en) | 2013-04-04 | 2014-10-09 | Cavendish Kinetics, Inc | Mems digital variable capacitor design with high linearity |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2006011239A1 (ja) | 2004-07-29 | 2008-05-01 | 株式会社日立メディアエレクトロニクス | 容量型ｍｅｍｓ素子とその製造方法、及び高周波装置 |
| CN100403476C (zh) | 2004-09-27 | 2008-07-16 | 东南大学 | 射频微电子机械单刀双掷膜开关及其制造方法 |
| JP2009510707A (ja) * | 2005-10-03 | 2009-03-12 | アナログ デバイシス， インコーポレイテッド | Ｍｅｍｓスイッチ接点システム |
| WO2010054244A2 (en) * | 2008-11-07 | 2010-05-14 | Cavendish Kinetics, Inc. | Method of using a plurality of smaller mems devices to replace a larger mems device |
| JP2010135614A (ja) * | 2008-12-05 | 2010-06-17 | Fujitsu Ltd | 可変容量素子 |
| JP5208867B2 (ja) * | 2009-06-25 | 2013-06-12 | 株式会社東芝 | Ｍｅｍｓデバイス及びその製造方法 |
| US8685778B2 (en) * | 2010-06-25 | 2014-04-01 | International Business Machines Corporation | Planar cavity MEMS and related structures, methods of manufacture and design structures |
| US8797127B2 (en) * | 2010-11-22 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | MEMS switch with reduced dielectric charging effect |
| JP6067710B2 (ja) * | 2011-09-02 | 2017-01-25 | キャベンディッシュ・キネティックス・インコーポレイテッドＣａｖｅｎｄｉｓｈ Ｋｉｎｅｔｉｃｓ， Ｉｎｃ． | Ｒｆｍｅｍｓのアイソレーション、直列及びシャントｄｖｃ、及び小型のｍｅｍｓ |
| JP6107827B2 (ja) * | 2012-09-10 | 2017-04-05 | 富士通株式会社 | 可変容量回路及びインピーダンス整合回路 |
| JP2015001459A (ja) * | 2013-06-17 | 2015-01-05 | セイコーエプソン株式会社 | 機能素子、電子機器、および移動体 |
| EP3028291B1 (en) * | 2013-08-01 | 2018-04-25 | Cavendish Kinetics, Inc. | Dvc utilizing mems resistive switches and mim capacitors |
| CN104037027B (zh) * | 2014-06-26 | 2016-02-03 | 电子科技大学 | 一种mems电容开关 |
-
2016
- 2016-01-28 US US15/548,992 patent/US10163566B2/en active Active
- 2016-01-28 JP JP2017541645A patent/JP7021947B2/ja active Active
- 2016-01-28 EP EP16703698.7A patent/EP3254294B1/en active Active
- 2016-01-28 WO PCT/US2016/015360 patent/WO2016126517A1/en not_active Ceased
- 2016-01-28 CN CN201680014343.0A patent/CN107430963B/zh active Active
- 2016-01-28 KR KR1020177024832A patent/KR102554425B1/ko active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005528751A (ja) | 2002-05-31 | 2005-09-22 | ノースロップ グラマン コーポレーション | 微小電気機械スイッチ |
| US20050248423A1 (en) | 2004-03-12 | 2005-11-10 | The Regents Of The University Of California | High isolation tunable MEMS capacitive switch |
| JP2010245276A (ja) | 2009-04-06 | 2010-10-28 | Fujitsu Ltd | 可変容量素子 |
| WO2014165624A1 (en) | 2013-04-04 | 2014-10-09 | Cavendish Kinetics, Inc | Mems digital variable capacitor design with high linearity |
Also Published As
| Publication number | Publication date |
|---|---|
| EP3254294B1 (en) | 2023-05-24 |
| EP3254294A1 (en) | 2017-12-13 |
| WO2016126517A1 (en) | 2016-08-11 |
| US20180033553A1 (en) | 2018-02-01 |
| KR102554425B1 (ko) | 2023-07-11 |
| US10163566B2 (en) | 2018-12-25 |
| KR20170106489A (ko) | 2017-09-20 |
| JP2018509757A (ja) | 2018-04-05 |
| CN107430963B (zh) | 2019-12-13 |
| CN107430963A (zh) | 2017-12-01 |
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