JP2018509752A5 - - Google Patents
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- JP2018509752A5 JP2018509752A5 JP2017538344A JP2017538344A JP2018509752A5 JP 2018509752 A5 JP2018509752 A5 JP 2018509752A5 JP 2017538344 A JP2017538344 A JP 2017538344A JP 2017538344 A JP2017538344 A JP 2017538344A JP 2018509752 A5 JP2018509752 A5 JP 2018509752A5
- Authority
- JP
- Japan
- Prior art keywords
- intensity data
- image
- inspection system
- swaths
- focus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201562105979P | 2015-01-21 | 2015-01-21 | |
| US62/105,979 | 2015-01-21 | ||
| US15/001,158 US9816940B2 (en) | 2015-01-21 | 2016-01-19 | Wafer inspection with focus volumetric method |
| US15/001,158 | 2016-01-19 | ||
| PCT/US2016/014167 WO2016118651A1 (en) | 2015-01-21 | 2016-01-20 | Wafer inspection with focus volumetric method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018509752A JP2018509752A (ja) | 2018-04-05 |
| JP2018509752A5 true JP2018509752A5 (enExample) | 2019-02-28 |
| JP6769971B2 JP6769971B2 (ja) | 2020-10-14 |
Family
ID=56407653
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017538344A Active JP6769971B2 (ja) | 2015-01-21 | 2016-01-20 | 焦点体積方法を用いたウェーハ検査 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US9816940B2 (enExample) |
| JP (1) | JP6769971B2 (enExample) |
| KR (1) | KR102326402B1 (enExample) |
| CN (1) | CN107209125B (enExample) |
| DE (1) | DE112016000419B4 (enExample) |
| IL (1) | IL253384B (enExample) |
| TW (1) | TWI672497B (enExample) |
| WO (1) | WO2016118651A1 (enExample) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9916965B2 (en) | 2015-12-31 | 2018-03-13 | Kla-Tencor Corp. | Hybrid inspectors |
| US10887580B2 (en) | 2016-10-07 | 2021-01-05 | Kla-Tencor Corporation | Three-dimensional imaging for semiconductor wafer inspection |
| US11047806B2 (en) | 2016-11-30 | 2021-06-29 | Kla-Tencor Corporation | Defect discovery and recipe optimization for inspection of three-dimensional semiconductor structures |
| KR102429614B1 (ko) * | 2017-06-08 | 2022-08-04 | 삼성전자주식회사 | 테스트 시스템, 테스트 방법 및 이들을 이용한 반도체 장치의 제조 방법 |
| US10957033B2 (en) | 2017-07-10 | 2021-03-23 | Kla-Tencor Corporation | Repeater defect detection |
| US11222799B2 (en) * | 2017-10-18 | 2022-01-11 | Kla Corporation | Swath selection for semiconductor inspection |
| US10599951B2 (en) | 2018-03-28 | 2020-03-24 | Kla-Tencor Corp. | Training a neural network for defect detection in low resolution images |
| KR102738153B1 (ko) * | 2018-06-04 | 2024-12-05 | 에이에스엠엘 네델란즈 비.브이. | 패터닝 공정을 위한 공정 모델을 개선하는 방법 |
| US10846845B2 (en) * | 2018-07-25 | 2020-11-24 | Fei Company | Training an artificial neural network using simulated specimen images |
| US10957035B2 (en) * | 2018-11-30 | 2021-03-23 | Kla Corporation | Defect classification by fitting optical signals to a point-spread function |
| US11379967B2 (en) | 2019-01-18 | 2022-07-05 | Kla Corporation | Methods and systems for inspection of semiconductor structures with automatically generated defect features |
| KR102418198B1 (ko) * | 2019-05-15 | 2022-07-07 | 전상구 | 기판 상의 패턴을 측정하는 시스템들 및 방법들 |
| TWI755755B (zh) * | 2019-06-17 | 2022-02-21 | 邦睿生技股份有限公司 | 用於測試生物樣本的裝置 |
| JP7451227B2 (ja) * | 2020-02-28 | 2024-03-18 | 日東電工株式会社 | 光透過性積層体の検査方法 |
| CN112881419B (zh) * | 2021-05-06 | 2024-01-30 | 高视科技(苏州)股份有限公司 | 芯片检测方法、电子设备及存储介质 |
| JP7596234B2 (ja) * | 2021-08-25 | 2024-12-09 | 日東電工株式会社 | 光透過性積層体の検査方法および検査装置 |
| TWI792582B (zh) * | 2021-09-27 | 2023-02-11 | 海華科技股份有限公司 | 鏡頭對焦系統、鏡頭對焦方法以及圖表顯示結構 |
| CN119624841B (zh) * | 2025-02-11 | 2025-05-30 | 西安高商智能科技有限责任公司 | 基于图像处理的电阻阵列红外景象图像的图像增强方法 |
Family Cites Families (32)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4818110A (en) * | 1986-05-06 | 1989-04-04 | Kla Instruments Corporation | Method and apparatus of using a two beam interference microscope for inspection of integrated circuits and the like |
| JPH04142055A (ja) * | 1990-10-01 | 1992-05-15 | Nec Yamagata Ltd | 半導体ウェーハの外観検査装置 |
| US5438413A (en) * | 1993-03-03 | 1995-08-01 | Kla Instruments Corporation | Process for measuring overlay misregistration during semiconductor wafer fabrication |
| EP1190372A1 (en) | 1999-06-01 | 2002-03-27 | Greenvision Systems Ltd | Method for in-situ focus-fusion multi-layer spectral imaging and analysis of particulate samples |
| US7170075B2 (en) | 2002-07-18 | 2007-01-30 | Rudolph Technologies, Inc. | Inspection tool with a 3D point sensor to develop a focus map |
| JP2004198199A (ja) * | 2002-12-17 | 2004-07-15 | Hitachi High-Technologies Corp | 欠陥検査装置 |
| US7302360B2 (en) | 2003-10-24 | 2007-11-27 | Ade Corporation | Defect size projection |
| US7551272B2 (en) | 2005-11-09 | 2009-06-23 | Aceris 3D Inspection Inc. | Method and an apparatus for simultaneous 2D and 3D optical inspection and acquisition of optical inspection data of an object |
| JP4723362B2 (ja) | 2005-11-29 | 2011-07-13 | 株式会社日立ハイテクノロジーズ | 光学式検査装置及びその方法 |
| US7659973B2 (en) | 2006-05-26 | 2010-02-09 | Applied Materials Southeast Asia, Pte Ltd. | Wafer inspection using short-pulsed continuous broadband illumination |
| JP4928862B2 (ja) * | 2006-08-04 | 2012-05-09 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法及びその装置 |
| US7904845B2 (en) | 2006-12-06 | 2011-03-08 | Kla-Tencor Corp. | Determining locations on a wafer to be reviewed during defect review |
| US8073240B2 (en) | 2007-05-07 | 2011-12-06 | Kla-Tencor Corp. | Computer-implemented methods, computer-readable media, and systems for identifying one or more optical modes of an inspection system as candidates for use in inspection of a layer of a wafer |
| JP5178079B2 (ja) * | 2007-07-23 | 2013-04-10 | 株式会社日立ハイテクノロジーズ | 欠陥検査方法およびその装置 |
| JP2009288162A (ja) * | 2008-05-30 | 2009-12-10 | Hitachi Kokusai Electric Inc | ３次元測定装置 |
| JP6185693B2 (ja) | 2008-06-11 | 2017-08-23 | ケーエルエー−テンカー・コーポレーションＫｌａ−Ｔｅｎｃｏｒ Ｃｏｒｐｏｒａｔｉｏｎ | ウェーハー上の設計欠陥および工程欠陥の検出、ウェーハー上の欠陥の精査、設計内の１つ以上の特徴を工程監視特徴として使用するための選択、またはそのいくつかの組み合わせのためのシステムおよび方法 |
| JP2010097419A (ja) * | 2008-10-16 | 2010-04-30 | Toshiba Plant Systems & Services Corp | 三次元データ処理装置、三次元データ処理プログラム、および三次元データ処理方法 |
| SG163442A1 (en) * | 2009-01-13 | 2010-08-30 | Semiconductor Technologies & Instruments | System and method for inspecting a wafer |
| SG164293A1 (en) * | 2009-01-13 | 2010-09-29 | Semiconductor Technologies & Instruments Pte | System and method for inspecting a wafer |
| US8605275B2 (en) | 2009-01-26 | 2013-12-10 | Kla-Tencor Corp. | Detecting defects on a wafer |
| US9601393B2 (en) | 2009-02-06 | 2017-03-21 | Kla-Tencor Corp. | Selecting one or more parameters for inspection of a wafer |
| DE102010025033B4 (de) | 2010-06-23 | 2021-02-11 | Carl Zeiss Smt Gmbh | Verfahren zur Defekterkennung und Reparatur von EUV-Masken |
| US8810646B2 (en) | 2010-10-12 | 2014-08-19 | Kla-Tencor Corporation | Focus offset contamination inspection |
| KR101158323B1 (ko) * | 2010-10-14 | 2012-06-26 | 주식회사 고영테크놀러지 | 기판 검사방법 |
| DE112011104658B4 (de) * | 2010-12-29 | 2020-06-18 | Koh Young Technology Inc. | Verfahren zum Prüfen eines Substrats |
| US20120316855A1 (en) | 2011-06-08 | 2012-12-13 | Kla-Tencor Corporation | Using Three-Dimensional Representations for Defect-Related Applications |
| US9595091B2 (en) * | 2012-04-19 | 2017-03-14 | Applied Materials Israel, Ltd. | Defect classification using topographical attributes |
| US9454072B2 (en) | 2012-11-09 | 2016-09-27 | Kla-Tencor Corporation | Method and system for providing a target design displaying high sensitivity to scanner focus change |
| US9390494B2 (en) | 2012-12-13 | 2016-07-12 | Kla-Tencor Corporation | Delta die intensity map measurement |
| US9176074B2 (en) * | 2013-01-28 | 2015-11-03 | Kabushiki Kaisha Toshiba | Pattern inspection method and pattern inspection apparatus |
| US9092846B2 (en) | 2013-02-01 | 2015-07-28 | Kla-Tencor Corp. | Detecting defects on a wafer using defect-specific and multi-channel information |
| US9091935B2 (en) | 2013-03-11 | 2015-07-28 | Kla-Tencor Corporation | Multistage extreme ultra-violet mask qualification |
-
2016
- 2016-01-19 US US15/001,158 patent/US9816940B2/en active Active
- 2016-01-20 DE DE112016000419.2T patent/DE112016000419B4/de active Active
- 2016-01-20 KR KR1020177022502A patent/KR102326402B1/ko active Active
- 2016-01-20 WO PCT/US2016/014167 patent/WO2016118651A1/en not_active Ceased
- 2016-01-20 CN CN201680006491.8A patent/CN107209125B/zh active Active
- 2016-01-20 JP JP2017538344A patent/JP6769971B2/ja active Active
- 2016-01-21 TW TW105101920A patent/TWI672497B/zh active
-
2017
- 2017-07-10 IL IL253384A patent/IL253384B/en active IP Right Grant
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