JP2018205707A - 電界発光表示装置 - Google Patents
電界発光表示装置 Download PDFInfo
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Abstract
Description
第2駆動素子(DT2)は、半導体パターン(DA1、DA2)の上に配置された共通ゲート(DG)と、コンタクトホール(CH3、CH4)を介して第2半導体パターン(DA2)に接続された第1及び第2電極(DD2、DS2)を含む。
第1発光時間(Tem1)の間の第2EM信号(EM2)と、第1及び第2スキャン信号(SC1、SC2)は、ゲートオフ電圧を維持する。したがって、第1発光時間(Tem1)の間、第3−1スイッチ素子(S31)は、ターンーオンされる反面、残りのスイッチ素子(S11、S12、S2、S32)は、ターン−オフされる。
図19A〜図19Dに示された第2駆動部の駆動時間の間、第1駆動部は動作しない。
130:タイミングコントローラ 120:ゲート駆動部
DT1、DT2:駆動素子 S1〜S34:スイッチ素子
Claims (16)
- 互いに交差するデータラインとゲートライン、及びマトリックス状に配置された画素を含む電界発光表示装置において、
前記画素のそれぞれのサブ画素は、
第1発光制御信号に応答して、画素駆動電圧と発光素子との間の電流経路をスイッチングする第1EMスイッチ素子、及び前記第1EMスイッチ素子と前記発光素子との間に接続された第1駆動素子を用いて、前記発光素子を駆動する第1駆動部と、
第2発光制御信号に応答して、前記画素駆動電圧と発光素子との間の電流経路をスイッチングする第2EMスイッチ素子、及び前記第2EMスイッチ素子と前記発光素子との間に接続された第2駆動素子を用いて、前記発光素子を駆動する第2駆動部を備える電界発光表示装置。 - 前記駆動素子と前記EMスイッチ素子のそれぞれの半導体パターンは、酸化物半導体を含むトランジスタを含む、請求項1に記載の電界発光表示装置。
- 前記第1及び第2駆動素子は、1つのゲートを共有する、請求項2に記載の電界発光表示装置。
- 前記第1及び第2駆動素子は、基板上に垂直に積層され、
前記第1及び第2駆動素子の内、いずれかが1つが第1半導体パターン上に前記ゲートが配置されたトップゲート構造のトランジスタであり、
他の1つが第2半導体パターンの下に前記ゲートが配置されたボトムゲート構造のトランジスタである、請求項3に記載の電界発光表示装置。 - 前記第1及び第2駆動素子のそれぞれは、前記1つのゲートを共有するトップゲート構造のトランジスタである、請求項3に記載の電界発光表示装置。
- 前記第1及び第2駆動素子のそれぞれは、前記1つのゲートを共有するボトムゲート構造のトランジスタである、請求項3に記載の電界発光表示装置。
- ノーマル駆動モードにおいて毎フレームごとにデータが前記画素に書き込まれ、
前記第1及び第2駆動部が前記ノーマル駆動モード内で交互に駆動され、
前記ノーマル駆動モードの第1駆動部の駆動時間の間、第1EM信号がゲートオン電圧で発生され、前記第1EMスイッチ素子がターンーオンされ、
前記ノーマル駆動モードの第2駆動部の駆動時間の間、第2EM信号がゲートオン電圧で発生され、前記第2EMスイッチ素子がターンーオンされる、請求項1に記載の電界発光表示装置。 - ノーマル駆動モードにおいて毎フレームごとにデータが前記画素に書き込まれ、
低消費電力駆動モードにおいて、前記ノーマル駆動モードより低いフレームレートで前記データが前記画素に書き込まれ、
前記ノーマル駆動モードにおいて、第1EM信号がゲートオン電圧で発生され、前記第1駆動部が駆動され、
前記低消費電力駆動モードにおいて、第2EM信号がゲートオン電圧で発生され、前記第2駆動部が駆動される、請求項1に記載の電界発光表示装置。 - ノーマル駆動モードにおいて毎フレームごとにデータが前記画素に書き込まれ、
低消費電力駆動モードにおいて、前記ノーマル駆動モードより低いフレームレートで前記データが前記画素に書き込まれ、
前記ノーマル駆動モードにおいて、前記第1及び第2EM信号が交互にゲートオン電圧で発生され、前記第1及び第2駆動部が交互に駆動され、
前記低消費電力駆動モードにおいて、前記第2EM信号がゲートオン電圧で発生され、前記第2駆動部が駆動される、請求項1に記載の電界発光表示装置。 - 前記第2駆動素子のチャンネル比(W/L)が前記第1駆動素子のチャンネル比(W/L)より小さい、請求項9に記載の電界発光表示装置。
- 前記第2駆動部が駆動されるとき、前記第2駆動部に印加される前記画素駆動電圧が、
前記第1駆動部が駆動されるとき、前記第1駆動部に印加される前記画素駆動電圧より低い、請求項9に記載の電界発光表示装置。 - 前記駆動素子のゲートと前記発光素子との間に接続されるストレージキャパシタをさらに備え、
予め設定されたしきい値電圧のサンプリング期間に第1及び第2駆動素子のしきい値電圧が前記ストレージキャパシタに貯蔵され、
前記しきい値電圧サンプリング期間の後に設定されたデータ書き込み期間に前記駆動素子のゲートにデータ電圧が供給される、請求項1に記載の電界発光表示装置。 - 前記第1駆動部は、
前記第1駆動素子と、前記発光素子との間に配置されて、第3発光制御信号に応答して前記第1駆動素子と前記発光素子との間の電流経路をスイッチングする第3EMスイッチ素子をさらに備え、
前記第2駆動部は、
前記第2駆動素子と、前記発光素子との間に配置されて第4発光制御信号に応答して前記第2駆動素子と、前記発光素子との間の電流経路をスイッチングする第4EMスイッチ素子をさらに備える、請求項1に記載の電界発光表示装置。 - 第1スキャン信号に応答して、初期化時間と、前記初期化時間の後に割り当てられたサンプリング時間に所定の基準電圧を前記第1及び第2駆動素子のゲートに供給した後、前記サンプリング時間以降に割り当てられたデータ書き込み時間にデータ電圧を前記第1及び第2駆動素子のゲートに供給する第1スイッチ素子と、
第2スキャン信号に応答して、前記初期化時間に所定の初期化電圧を前記発光素子のアノードと前記第1及び第2駆動素子のソース電極に供給する第2スイッチ素子をさらに備える、請求項1又は13に記載の電界発光表示装置。 - 第1スキャン信号に応答して、初期化時間と、前記初期化時間の後に割り当てられたサンプリング時間に所定の基準電圧を前記第1及び第2駆動素子のゲートに供給する第1スイッチ素子と、
第2スキャン信号に応答して、前記初期化時間に所定の初期化電圧を前記発光素子のアノードと前記第1及び第2駆動素子のソース電極に供給する第2スイッチ素子と、
第3スキャン信号に応答して、前記サンプリング時間に続いて割り当てられたデータ書き込み時間にデータ電圧を前記第1及び第2駆動素子のゲートに供給する第3スイッチ素子をさらに備える、請求項1又は13に記載の電界発光表示装置。 - センシングモードにおいて、前記第1及び第3スキャン信号が同時にゲートオン電圧で発生して前記第1及び第3スイッチ素子が同時にターンーオンされ、
前記基準電圧が供給される基準電圧ライン、前記第1及び第3スイッチ素子と、前記データ電圧が供給されるデータラインを含む電流経路を介して前記第3スイッチ素子のしきい値電圧がセンシングされる、 請求項15に記載の電界発光表示装置。
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