JP2018201022A - 基板接合装置および基板接合方法 - Google Patents
基板接合装置および基板接合方法 Download PDFInfo
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- JP2018201022A JP2018201022A JP2018128263A JP2018128263A JP2018201022A JP 2018201022 A JP2018201022 A JP 2018201022A JP 2018128263 A JP2018128263 A JP 2018128263A JP 2018128263 A JP2018128263 A JP 2018128263A JP 2018201022 A JP2018201022 A JP 2018201022A
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Abstract
【解決手段】基板接合装置100は、真空チャンバ200と、第1基板301および第2基板302の接合面を活性化させる表面活性化処理部610と、2つの接合面を接触させることにより、基板301、302を接合するステージ移動機構403、404とを備える。真空チャンバ200内において接合面を活性化させる際には、接合面を活性化させる粒子ビームの照射と共に、シリコン粒子が接合面に照射される。これにより、基板301、302の接合強度を向上することができる。
【選択図】図1
Description
基板接合装置100は、真空チャンバ200と、基板支持部400と、位置測定部500と、表面処理部600と、コントローラ700とを備える。基板支持部400は、被接合物である基板301,302を互いに対向させて支持し、両基板301,302の相対的な位置決めを行う。位置測定部500は、基板301,302の相対的位置関係を測定する。
第1の実施の形態では、接合プロセスとして粒子ビーム照射やプラズマ処理後の水分子付着により親水化して接合する手法を示した。次に第2の実施の形態として粒子ビーム照射により接合表面を活性化処理した後、真空中で活性な表面を維持した状態で直接接合する手法においての効果を説明する。表2に示すようにSiとLn(ニオブ酸リチウム)の接合において、通常の内面カーボンからなる高速原子ビーム照射においては0.7J/m2の強度であったものが、底面をSiに変更した高速原子ビームで同条件処理をしたところ接合強度が2.5J/m2以上とバルク破壊する強度が得られた。
200 真空チャンバ(第1真空チャンバ)
250 ロードロックチャンバ(第2真空チャンバ)
251 ステージ
301,302 基板
401,402 ステージ
403,404 ステージ移動機構(基板移動機構)
601 ライン式粒子ビーム源(高速原子ビーム源、イオンビーム源)
602 遮蔽部材
603 ビーム移動機構
610 表面活性化処理部
613 RIE機構
616 プラズマ処理部
620 親水化処理部
711,751 放電室(筐体)
712,752 電極
715,727,757 放出孔
720,731 筐体
726 放電室
732 (シリコン)部材
758 (DLC)コーティング
S11〜S13 ステップ
Claims (18)
- 基板接合装置であって、
真空チャンバと、
前記真空チャンバ内において、2つの基板の2つの接合面に粒子ビームを照射して前記2つの接合面を活性化させ、少なくとも一方の接合面に前記粒子ビームの照射と同時にシリコン粒子を照射する表面活性化処理部と、
前記2つの接合面を接触させることにより、前記2つの基板を接合する基板移動機構と、
を備える。 - 請求項1に記載の基板接合装置であって、
前記表面活性化処理部が、粒子ビーム源として高速原子ビーム源またはイオンビーム源を含み、前記粒子ビーム源の放電室の内面の少なくとも一部が、シリコンにより形成される、または、シリコンを含む。 - 請求項2に記載の基板接合装置であって、
前記放出孔を形成する部材の内側が緻密化されたカーボンで形成される。 - 請求項2または3に記載の基板接合装置であって、
前記放電室の内面の少なくとも一部が、緻密化されたカーボンで形成される。 - 請求項2ないし4のいずれかに記載の基板接合装置であって、
前記放電室の内面の少なくとも一部が、チタン、タンタルおよびモリブデンの少なくとも1つを含む金属で形成される。 - 請求項1ないし5のいずれかに記載の基板接合装置であって、
前記表面活性化処理部が高速原子ビーム源であり、
前記高速原子ビーム源の陽電極となるロッドの表面が、金属により形成される。 - 請求項1に記載の基板接合装置であって、
前記表面活性化処理部により、前記少なくとも一方の接合面と同時に前記粒子ビームの照射範囲内に配置されたシリコン部材または前記ステージであるシリコン部材に前記粒子ビームが照射される。 - 請求項1ないし7のいずれかに記載の基板接合装置であって、
前記表面活性化処理部による処理後に、前記2つの接合面に対して親水化処理を行う親水化処理部をさらに備える。 - 基板接合装置であって、
真空チャンバと、
前記真空チャンバ内において、2つの基板の2つの接合面に粒子ビームを照射して前記2つの接合面を活性化させる表面活性化処理部と、
前記2つの接合面を接触させることにより、前記2つの基板を接合する基板移動機構と、
を備え、
前記表面活性化処理部が、粒子ビーム源として高速原子ビーム源またはイオンビーム源を含み、
前記粒子ビーム源の放電室の内面の少なくとも一部が、ダイヤモンドライクカーボンで形成される。 - 基板接合装置であって、
真空チャンバと、
前記真空チャンバ内において、接合面を互いに対向させつつ2つの基板をそれぞれ支持する2つのステージと、
前記2つのステージに支持された前記2つの基板の2つの接合面に粒子ビームを照射して前記2つの接合面を活性化させる高速原子ビーム源と、
前記高速原子ビーム源を、前記2つの接合面の間にて前記2つの接合面に平行に移動するビーム源移動機構と、
前記高速原子ビーム源が前記2つの接合面の間から退避した状態で、前記2つのステージに支持された前記2つの基板の前記2つの接合面を接触させることにより、前記2つの基板を接合する基板移動機構と、
を備え、
前記高速原子ビーム源が、
前記2つの接合面に対向する2つの部位のそれぞれに、前記ビーム源移動機構による移動方向に垂直かつ前記2つのステージに平行な方向に配列された複数の放出孔を有する放電室と、
前記放電室内に配置された陽電極と、
を備え、
前記高速原子ビーム源の前記移動方向における前記放電室の幅が、前記移動方向における前記2つの基板の幅よりも小さい。 - 請求項10に記載の基板接合装置であって、
前記放電室の内面の少なくとも一部が、緻密化されたカーボンにて形成される。 - 基板接合方法であって、
a)真空チャンバ内において、2つの基板の2つの接合面に粒子ビームを照射して前記2つの接合面を活性化させ、少なくとも一方の接合面に前記粒子ビームの照射と同時にシリコン粒子を照射する工程と、
b)前記2つの接合面を接触させることにより、前記2つの基板を接合する工程と、
を備える。 - 請求項12に記載の基板接合方法であって、
前記a)工程において、前記少なくとも一方の接合面と同時に前記粒子ビームの照射範囲内に配置されたシリコン部材または基板を保持するステージであるシリコン部材に前記粒子ビームが照射される。 - 請求項12または13に記載の基板接合方法であって、
前記a)工程の後、かつ、前記b)工程の前に、前記2つの接合面に対して親水化処理を行う工程をさらに備える。 - 請求項12ないし14のいずれかに記載の基板接合方法であって、
b)の工程において、3E-6Paより大気圧に近い真空度で接合が行われる。 - 基板接合方法であって、
a)真空チャンバ内において、接合面を互いに対向させつつ2つの基板を2つのステージにそれぞれ支持する工程と、
b)前記2つの基板の間にて、放電室の前記2つの接合面にそれぞれ対向する2つの部位に複数の放出孔を有する高速原子ビーム源を、前記2つの接合面に平行に移動することにより、粒子ビームを前記2つの接合面に同時に照射して前記2つの接合面を活性化させる工程と、
c)前記高速原子ビーム源が前記2つの接合面の間から退避した状態で、前記2つのステージに支持された前記2つの基板の前記2つの接合面を接触させることにより、前記2つの基板を接合する工程と、
を備え、
前記放電室の前記複数の放出孔は、前記2つの部位のそれぞれにて前記ビーム源移動機構による移動方向に垂直かつ前記2つのステージに平行な方向に配列されており、
前記高速原子ビーム源の前記移動方向における前記放電室の幅が、前記移動方向における前記2つの基板の幅よりも小さい。 - 基板接合装置であって、
真空チャンバと、
前記真空チャンバ内において、2つの基板の2つの接合面に粒子ビームを照射して前記2つの接合面を活性化させる高速原子ビーム源と、
ビーム源移動機構と、
前記2つの接合面を接触させることにより、前記2つの基板を接合する基板移動機構と、
を備え、
前記高速原子ビーム源が、
上下に放出孔を有する放電室と、
前記放電室内に配置された陽電極と、
を備え、
前記2つの基板の2つの接合面が、前記真空チャンバ内にて対向し、
前記ビーム源移動機構が、前記高速原子ビーム源を、前記2つの接合面の間にて前記2つの接合面に平行に移動し、
前記高速原子ビーム源の移動方向における前記放電室の幅が、前記移動方向における前記2つの基板の幅よりも小さく、
前記放電室の内面の少なくとも一部が、緻密化されたカーボンにて形成される。 - 基板接合方法であって、
a)真空チャンバ内において、2つの接合面が対向する2つの基板の間にて、放電室の前記2つの接合面にそれぞれ対向する2つの部位に放出孔を有する高速原子ビーム源を、前記2つの接合面に平行に移動することにより、粒子ビームを前記2つの接合面に同時に照射して前記2つの接合面を活性化させる工程と、
b)前記2つの接合面を接触させることにより、前記2つの基板を接合する工程と、
を備え、
前記高速原子ビーム源の移動方向における前記放電室の幅が、前記移動方向における前記2つの基板の幅よりも小さく、
前記放電室の内面の少なくとも一部が、緻密化されたカーボンにて形成される。
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JP7495175B2 (ja) | 2022-06-22 | 2024-06-04 | ボンドテック株式会社 | 接合装置および接合方法 |
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