JP2018182242A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
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- JP2018182242A JP2018182242A JP2017084243A JP2017084243A JP2018182242A JP 2018182242 A JP2018182242 A JP 2018182242A JP 2017084243 A JP2017084243 A JP 2017084243A JP 2017084243 A JP2017084243 A JP 2017084243A JP 2018182242 A JP2018182242 A JP 2018182242A
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Abstract
【解決手段】第1導電型の半導体層に設けられ、半導体層の厚み方向に主電流が流れるMOSトランジスタが形成された活性領域と、活性領域の周囲に設けられた終端領域と、を備え、終端領域は、活性領域に沿って設けられた欠陥検出デバイスを有し、欠陥検出デバイスは、半導体層の第1の主面上に活性領域に沿って設けられた第1の主電極と、導体層の第2の主面側に設けられた第2の主電極と、を有したダイオードで構成される。
【選択図】図1
Description
「MOS」という用語は、古くは金属/酸化物/半導体の接合構造に用いられており、Metal-Oxide-Semiconductorの頭文字を採ったものとされている。しかしながら特にMOS構造を有する電界効果トランジスタ(以下、単に「MOSトランジスタ」と称す)においては、近年の集積化や製造プロセスの改善などの観点からゲート絶縁膜やゲート電極の材料が改善されている。
<装置構成>
図1は、本発明に係る半導体装置の実施の形態1の半導体装置100の上面構成を示す平面図である。なお、半導体装置100は、炭化珪素MOSトランジスタ(SiC−MOSFET)101に欠陥検出デバイス102が付属した構成を有している。
先ず、半導体装置100におけるSiC−MOSFET101の動作について説明する。SiC−MOSFET101は、ゲート電極22にしきい値以上の正の電圧を印加すると、ウェル領域13の表層に主電流の経路であるチャネルが形成される。この状態でドレイン電極25に正の電圧を印加すると、ドレイン電極25からエピタキシャル層12、ウェル領域13の表層(チャネル)、ソース領域14を経てソース電極24に主電流が流れる。
次に、実施の形態1の半導体装置100の製造方法について、製造工程を順に示す断面図である図5〜図9を用いて説明する。なお、以下の製造方法は一例であり、特に手順等は支障をきたさない範囲で変更しても問題ない。
図1に示した半導体装置100の平面図では、ソース電極24は矩形の外形を有する半導体装置100と同様に角張った輪郭形状を有し、ゲート配線32もソース電極24の外形に沿って設けられているので、ソース電極24と同様に角張った輪郭形状を有していた。
図11は実施の形態1の変形例2に係る半導体装置100Bの上面構成を示す平面図である。また、図12には、図11におけるB−B線で示される終端領域の断面構成を示し、図13には、図11におけるC−C線で示される終端領域の断面構成を示している。なお、図11〜図13においては、図1および図2を用いて説明した半導体装置100と同一の構成については同一の符号を付し、重複する説明は省略する。
図14は実施の形態1の変形例3に係る半導体装置100Cの上面構成を示す平面図である。なお、図14においては、図1を用いて説明した半導体装置100と同一の構成については同一の符号を付し、重複する説明は省略する。
図16は実施の形態1の変形例4に係る半導体装置100Dの終端領域での構成を示す断面図である。なお、図16においては、図2を用いて説明した半導体装置100の終端領域での構成と同一の構成については同一の符号を付し、重複する説明は省略する。
以上説明した実施の形態1およびその変形例においては、欠陥検出デバイス102としてショットキーバリアダイオードを用いる例を説明したが、欠陥検出デバイス102としてPiNダイオードを用いても良い。
以上説明した実施の形態2においては、欠陥検出デバイス102としてPiNダイオードを用いる例を説明したが、欠陥検出デバイス102としてPiNダイオード領域とショットキーバリアダイオード領域を有したダイオードを用いても良い。
実施の形態1において説明した欠陥検出デバイス102によるスクリーニング方法は、欠陥検出デバイス102で検出されるダイオードの順方向特性および逆方向特性の少なくとも一方を利用することで、SiC−MOSFET101の活性領域におけるボディダイオードへの電流ストレステストでは検出できない終端領域での結晶欠陥を検出するものとして説明したが、特許文献1に開示されるような公知のスクリーニング方法と組み合わせても良い。
以上説明した実施の形態1〜4においては、本発明をSiC半導体装置に適用した構成を示したが、本発明の適用はこれに限定されず、窒化ガリウム(GaN)など、他のワイドバンドギャップ半導体を用いたワイドバンドギャップ半導体装置に適用しても良い。
Claims (14)
- 第1導電型の半導体層に設けられ、前記半導体層の厚み方向に主電流が流れるMOSトランジスタが形成された活性領域と、
前記活性領域の周囲に設けられた終端領域と、を備え、
前記終端領域は、
前記活性領域に沿って設けられた欠陥検出デバイスを有し、
前記欠陥検出デバイスは、
前記半導体層の第1の主面上に前記活性領域に沿って設けられた第1の主電極と、
前記半導体層の第2の主面側に設けられた第2の主電極と、を有したダイオードで構成される、半導体装置。 - 前記ダイオードは、
前記第1の主電極が前記半導体層とショットキー接触するショットキーバリアダイオードである、請求項1記載の半導体装置。 - 前記ダイオードは、
前記第1の主電極に接触するように前記半導体層の上層部に選択的に設けられた第2導電型の不純物領域を有するPNダイオードまたはPiNダイオードである、請求項1記載の半導体装置。 - 前記ダイオードは、
前記第1の主電極に接触するように前記半導体層の上層部に選択的に設けられた第2導電型の不純物領域を有するPNダイオード領域またはPiNダイオード領域と、前記第1の主電極が前記半導体層とショットキー接触するショットキーバリアダイオード領域と、を有する、請求項1記載の半導体装置。 - 前記ダイオードは、
前記第1の主電極の一部に接続された電極パッドを有し、
前記電極パッドは、前記活性領域とは電気的に分離される、請求項1記載の半導体装置。 - 前記活性領域は、平面視において角部が曲率部となった四角形状をなし、
前記第1の主電極は、前記活性領域の曲率部に対応する部分に曲率部を有し、
前記電極パッドは、前記活性領域の曲率部と前記第1の主電極の曲率部との間に配設される、請求項5記載の半導体装置。 - 少なくとも前記終端領域を覆うように設けられた絶縁膜をさらに備え、
前記絶縁膜は、
前記電極パッドの少なくとも一部上部に設けられ、前記電極パッドに達する開口部を有する、請求項5記載の半導体装置。 - 前記電極パッドは、
前記第1の主電極の外縁から前記半導体層の外縁にかけて配設される、請求項5記載の半導体装置。 - 前記ダイオードは、
前記半導体層の前記第1の主面に設けたリセス部に前記第1の主電極の底面側が挿入される、請求項1記載の半導体装置。 - 前記半導体層は、炭化珪素の半導体層である、請求項1記載の半導体装置。
- 第1導電型の半導体層に設けられ、前記半導体層の厚み方向に主電流が流れるMOSトランジスタが形成された活性領域と、前記活性領域の周囲に設けられた終端領域と、を備え、前記終端領域は、前記活性領域に沿って設けられた欠陥検出デバイスを有し、前記欠陥検出デバイスは、前記半導体層の第1の主面上に前記活性領域に沿って設けられた第1の主電極と、前記半導体層の第2の主面側に設けられた第2の主電極と、を有したダイオードで構成される半導体装置を形成する工程と、
前記欠陥検出デバイスおよび前記MOSトランジスタの少なくとも一方に、バイポーラ電流ストレスを印加する工程と、
前記バイポーラ電流ストレスを印加する工程の前後で、前記欠陥検出デバイスの順方向特性および逆方向特性の少なくとも一方を測定する工程と、
前記順方向特性および前記逆方向特性の少なくとも一方の変動値に基づいて、前記半導体装置の信頼性の判定および選別を行う工程と、を備える、半導体装置の製造方法。 - 第1導電型の半導体層に設けられ、前記半導体層の厚み方向に主電流が流れるMOSトランジスタが形成された活性領域と、前記活性領域の周囲に設けられた終端領域と、を備え、前記終端領域は、前記活性領域に沿って設けられた欠陥検出デバイスを有し、前記欠陥検出デバイスは、前記半導体層の第1の主面上に前記活性領域に沿って設けられた第1の主電極と、前記半導体層の第2の主面側に設けられた第2の主電極と、を有したダイオードで構成される半導体装置を形成する工程と、
前記欠陥検出デバイスの順方向特性および逆方向特性の少なくとも一方を測定する工程と、
前記順方向特性および前記逆方向特性の少なくとも一方に基づいて、前記半導体装置の信頼性の判定および選別を行う工程と、を備える、半導体装置の製造方法。 - 第1導電型の半導体層に設けられ、前記半導体層の厚み方向に主電流が流れるMOSトランジスタが形成された活性領域と、前記活性領域の周囲に設けられた終端領域と、を備え、前記終端領域は、前記活性領域に沿って設けられた欠陥検出デバイスを有し、前記欠陥検出デバイスは、前記半導体層の第1の主面上に前記活性領域に沿って設けられた第1の主電極と、前記半導体層の第2の主面側に設けられた第2の主電極と、を有したダイオードで構成される複数の半導体装置を半導体ウエハ上に形成する工程と、
前記欠陥検出デバイスの順方向特性および逆方向特性の少なくとも一方を測定する工程と、
前記順方向特性および前記逆方向特性の少なくとも一方に基づいて、前記半導体装置の信頼性の判定および選別を行う工程と、を備え、
前記ダイオードは、
前記第1の主電極の一部に接続された電極パッドを有し、
前記電極パッドは、前記活性領域とは電気的に分離され、前記第1の主電極の外縁から前記半導体ウエハのダイシングラインを越えて前記半導体装置の配列間にまで延在するように設けられ、
前記欠陥検出デバイスの順方向特性および逆方向特性の少なくとも一方を測定する工程は、ウエハ状態で、前記電極パッドと前記第2の主電極との間の電流を測定する工程を含む、半導体装置の製造方法。 - 前記半導体層は、炭化珪素の半導体層である、請求項11から請求項13の何れか1項に記載の半導体装置の製造方法。
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