JP2018164080A - 半導体装置、および半導体装置の作製方法 - Google Patents

半導体装置、および半導体装置の作製方法 Download PDF

Info

Publication number
JP2018164080A
JP2018164080A JP2018053750A JP2018053750A JP2018164080A JP 2018164080 A JP2018164080 A JP 2018164080A JP 2018053750 A JP2018053750 A JP 2018053750A JP 2018053750 A JP2018053750 A JP 2018053750A JP 2018164080 A JP2018164080 A JP 2018164080A
Authority
JP
Japan
Prior art keywords
conductor
insulator
oxide
transistor
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2018053750A
Other languages
English (en)
Japanese (ja)
Inventor
木村　肇
Hajime Kimura
肇 木村
努 村川
Tsutomu Murakawa
努 村川
孝征 根井
Takamasa Nei
孝征 根井
大章 本多
Hiroaki Honda
大章 本多
裕亮 志野
Yusuke Shino
裕亮 志野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JP2018164080A publication Critical patent/JP2018164080A/ja
Priority to JP2022028993A priority Critical patent/JP7089645B2/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP2018053750A 2017-03-24 2018-03-22 半導体装置、および半導体装置の作製方法 Withdrawn JP2018164080A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022028993A JP7089645B2 (ja) 2017-03-24 2022-02-28 半導体装置及び情報端末

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017059440 2017-03-24
JP2017059440 2017-03-24

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022028993A Division JP7089645B2 (ja) 2017-03-24 2022-02-28 半導体装置及び情報端末

Publications (1)

Publication Number Publication Date
JP2018164080A true JP2018164080A (ja) 2018-10-18

Family

ID=63669902

Family Applications (5)

Application Number Title Priority Date Filing Date
JP2018053750A Withdrawn JP2018164080A (ja) 2017-03-24 2018-03-22 半導体装置、および半導体装置の作製方法
JP2022028993A Active JP7089645B2 (ja) 2017-03-24 2022-02-28 半導体装置及び情報端末
JP2022094301A Active JP7153821B2 (ja) 2017-03-24 2022-06-10 半導体装置、及び、情報端末
JP2022159292A Active JP7469423B2 (ja) 2017-03-24 2022-10-03 半導体装置
JP2024060753A Active JP7725648B2 (ja) 2017-03-24 2024-04-04 半導体装置

Family Applications After (4)

Application Number Title Priority Date Filing Date
JP2022028993A Active JP7089645B2 (ja) 2017-03-24 2022-02-28 半導体装置及び情報端末
JP2022094301A Active JP7153821B2 (ja) 2017-03-24 2022-06-10 半導体装置、及び、情報端末
JP2022159292A Active JP7469423B2 (ja) 2017-03-24 2022-10-03 半導体装置
JP2024060753A Active JP7725648B2 (ja) 2017-03-24 2024-04-04 半導体装置

Country Status (2)

Country Link
US (2) US10658395B2 (https=)
JP (5) JP2018164080A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020036660A (ja) * 2018-08-31 2020-03-12 株式会社大一商会 遊技機

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109729639B (zh) * 2018-12-24 2020-11-20 奥特斯科技(重庆)有限公司 在无芯基板上包括柱体的部件承载件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09213799A (ja) * 1996-02-07 1997-08-15 Hitachi Ltd 半導体素子の電極金属表面の改質方法
JPH11283971A (ja) * 1998-03-31 1999-10-15 Sharp Corp ドライエッチ基板の表面処理方法および装置
JP2006216936A (ja) * 2005-12-16 2006-08-17 Mitsubishi Electric Corp 液晶表示装置とその製造方法およびそれに用いられるｔｆｔアレイ基板
JP2016174144A (ja) * 2015-02-06 2016-09-29 株式会社半導体エネルギー研究所 装置およびその作製方法、ならびに電子機器

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0799203A (ja) * 1993-09-28 1995-04-11 Fujitsu Ltd 半導体装置の製造方法
JPH11505377A (ja) 1995-08-03 1999-05-18 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体装置
JP2008034472A (ja) 2006-07-26 2008-02-14 Sony Corp 半導体装置及びその製造方法
JP5061653B2 (ja) 2007-03-01 2012-10-31 日本電気株式会社 半導体装置及びその製造方法
KR101591613B1 (ko) 2009-10-21 2016-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR20190006091A (ko) 2009-10-29 2019-01-16 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2011096262A1 (en) 2010-02-05 2011-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5923248B2 (ja) 2010-05-20 2016-05-24 株式会社半導体エネルギー研究所 半導体装置
JP2012142562A (ja) 2010-12-17 2012-07-26 Semiconductor Energy Lab Co Ltd 半導体記憶装置
JP6030298B2 (ja) 2010-12-28 2016-11-24 株式会社半導体エネルギー研究所 緩衝記憶装置及び信号処理回路
TWI562142B (en) 2011-01-05 2016-12-11 Semiconductor Energy Lab Co Ltd Storage element, storage device, and signal processing circuit
JP6016532B2 (ja) 2011-09-07 2016-10-26 株式会社半導体エネルギー研究所 半導体装置
US8952379B2 (en) 2011-09-16 2015-02-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6139187B2 (ja) 2012-03-29 2017-05-31 株式会社半導体エネルギー研究所 半導体装置
KR102373263B1 (ko) * 2014-05-30 2022-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 제조하기 위한 방법
KR20160034200A (ko) * 2014-09-19 2016-03-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP2016092084A (ja) * 2014-10-31 2016-05-23 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法、モジュールおよび電子機器
US9583177B2 (en) 2014-12-10 2017-02-28 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device including memory device
JP6739185B2 (ja) 2015-02-26 2020-08-12 株式会社半導体エネルギー研究所 ストレージシステム、およびストレージ制御回路
US9685560B2 (en) * 2015-03-02 2017-06-20 Semiconductor Energy Laboratory Co., Ltd. Transistor, method for manufacturing transistor, semiconductor device, and electronic device
JP2016219483A (ja) 2015-05-15 2016-12-22 株式会社半導体エネルギー研究所 半導体装置
US9748169B1 (en) * 2016-04-04 2017-08-29 International Business Machines Corporation Treating copper interconnects
WO2017187301A1 (en) * 2016-04-28 2017-11-02 Semiconductor Energy Laboratory Co., Ltd. Transistor, semiconductor device, and electronic device
KR20180048327A (ko) * 2016-11-01 2018-05-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 및 반도체 장치의 제작 방법
US10147681B2 (en) * 2016-12-09 2018-12-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09213799A (ja) * 1996-02-07 1997-08-15 Hitachi Ltd 半導体素子の電極金属表面の改質方法
JPH11283971A (ja) * 1998-03-31 1999-10-15 Sharp Corp ドライエッチ基板の表面処理方法および装置
JP2006216936A (ja) * 2005-12-16 2006-08-17 Mitsubishi Electric Corp 液晶表示装置とその製造方法およびそれに用いられるｔｆｔアレイ基板
JP2016174144A (ja) * 2015-02-06 2016-09-29 株式会社半導体エネルギー研究所 装置およびその作製方法、ならびに電子機器

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020036660A (ja) * 2018-08-31 2020-03-12 株式会社大一商会 遊技機

Also Published As

Publication number Publication date
JP7089645B2 (ja) 2022-06-22
JP2022063363A (ja) 2022-04-21
US10971528B2 (en) 2021-04-06
JP7153821B2 (ja) 2022-10-14
US10658395B2 (en) 2020-05-19
JP7725648B2 (ja) 2025-08-19
US20200273886A1 (en) 2020-08-27
US20180286886A1 (en) 2018-10-04
JP2022111353A (ja) 2022-07-29
JP2024086786A (ja) 2024-06-28
JP7469423B2 (ja) 2024-04-16
JP2022177300A (ja) 2022-11-30

Similar Documents

Publication Publication Date Title
KR102899335B1 (ko) 반도체 장치
JP7019346B2 (ja) 半導体装置
JP2018061001A (ja) トランジスタ、半導体装置および電子機器
JP7032071B2 (ja) トランジスタ
JP6999325B2 (ja) 半導体装置
JP2018074151A (ja) 半導体装置
JP2018078289A (ja) 半導体装置、および半導体装置の作製方法
JP7725648B2 (ja) 半導体装置
US10910407B2 (en) Semiconductor device
JP2018073995A (ja) 半導体装置、および半導体装置の作製方法
JP2018073994A (ja) 半導体装置
JP2018160643A (ja) 半導体装置、電子機器、及び半導体装置の作製方法

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210303

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20211223

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220105

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20220628

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20220727