JP2018157048A5 - - Google Patents

Download PDF

Info

Publication number
JP2018157048A5
JP2018157048A5 JP2017052066A JP2017052066A JP2018157048A5 JP 2018157048 A5 JP2018157048 A5 JP 2018157048A5 JP 2017052066 A JP2017052066 A JP 2017052066A JP 2017052066 A JP2017052066 A JP 2017052066A JP 2018157048 A5 JP2018157048 A5 JP 2018157048A5
Authority
JP
Japan
Prior art keywords
reaction layer
etched
layer forming
forming step
deposited film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2017052066A
Other languages
English (en)
Japanese (ja)
Other versions
JP6820775B2 (ja
JP2018157048A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2017052066A priority Critical patent/JP6820775B2/ja
Priority claimed from JP2017052066A external-priority patent/JP6820775B2/ja
Priority to KR1020170091300A priority patent/KR101990331B1/ko
Priority to TW106125570A priority patent/TWI672741B/zh
Priority to US15/690,660 priority patent/US10665516B2/en
Publication of JP2018157048A publication Critical patent/JP2018157048A/ja
Publication of JP2018157048A5 publication Critical patent/JP2018157048A5/ja
Application granted granted Critical
Publication of JP6820775B2 publication Critical patent/JP6820775B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2017052066A 2017-03-17 2017-03-17 エッチング方法及びプラズマ処理装置 Active JP6820775B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017052066A JP6820775B2 (ja) 2017-03-17 2017-03-17 エッチング方法及びプラズマ処理装置
KR1020170091300A KR101990331B1 (ko) 2017-03-17 2017-07-19 에칭 방법 및 플라스마 처리 장치
TW106125570A TWI672741B (zh) 2017-03-17 2017-07-28 蝕刻方法及電漿處理裝置
US15/690,660 US10665516B2 (en) 2017-03-17 2017-08-30 Etching method and plasma processing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017052066A JP6820775B2 (ja) 2017-03-17 2017-03-17 エッチング方法及びプラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2018157048A JP2018157048A (ja) 2018-10-04
JP2018157048A5 true JP2018157048A5 (https=) 2019-06-27
JP6820775B2 JP6820775B2 (ja) 2021-01-27

Family

ID=63519523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017052066A Active JP6820775B2 (ja) 2017-03-17 2017-03-17 エッチング方法及びプラズマ処理装置

Country Status (4)

Country Link
US (1) US10665516B2 (https=)
JP (1) JP6820775B2 (https=)
KR (1) KR101990331B1 (https=)
TW (1) TWI672741B (https=)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US11276579B2 (en) * 2018-11-14 2022-03-15 Hitachi High-Tech Corporation Substrate processing method and plasma processing apparatus
WO2020121540A1 (ja) * 2019-02-04 2020-06-18 株式会社日立ハイテク プラズマ処理方法及びプラズマ処理装置
JP7339032B2 (ja) * 2019-06-28 2023-09-05 東京エレクトロン株式会社 基板処理方法および基板処理装置
JP7336365B2 (ja) * 2019-11-19 2023-08-31 東京エレクトロン株式会社 膜をエッチングする方法及びプラズマ処理装置
US12051574B2 (en) * 2019-12-20 2024-07-30 Hitachi High-Tech Corporation Wafer processing method and plasma processing apparatus
KR102429079B1 (ko) * 2019-12-23 2022-08-03 주식회사 히타치하이테크 플라스마 처리 방법 및 플라스마 처리에 이용하는 파장 선택 방법
JP7462444B2 (ja) * 2020-03-19 2024-04-05 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
US12062530B2 (en) * 2020-06-25 2024-08-13 Hitachi High-Tech Corporation Vacuum processing apparatus and vacuum processing method
KR102515864B1 (ko) * 2020-09-17 2023-03-31 주식회사 히타치하이테크 플라스마 처리 장치 및 플라스마 처리 방법
JP7254971B2 (ja) * 2020-12-16 2023-04-10 株式会社日立ハイテク プラズマ処理装置及びプラズマ処理方法
DE102021200627A1 (de) * 2021-01-25 2022-08-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung eingetragener Verein Verfahren zur Herstellung einer Solarzelle

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5352324A (en) * 1992-11-05 1994-10-04 Hitachi, Ltd. Etching method and etching apparatus therefor
JP3694662B2 (ja) 2001-09-17 2005-09-14 株式会社日立製作所 半導体素子製造プロセスにおける膜の処理量測定方法と装置、及びそれを用いた被処理材の処理方法と装置、及びそれを用いたプロセスの終点判定方法と装置
JP2005294348A (ja) * 2004-03-31 2005-10-20 Matsushita Electric Ind Co Ltd 半導体装置の製造方法
JP4969545B2 (ja) * 2008-09-22 2012-07-04 株式会社日立ハイテクノロジーズ 半導体製造装置
US20110139748A1 (en) * 2009-12-15 2011-06-16 University Of Houston Atomic layer etching with pulsed plasmas
US8617411B2 (en) * 2011-07-20 2013-12-31 Lam Research Corporation Methods and apparatus for atomic layer etching
KR102099408B1 (ko) * 2012-09-18 2020-04-10 도쿄엘렉트론가부시키가이샤 플라즈마 에칭 방법 및 플라즈마 에칭 장치
JP6072613B2 (ja) * 2013-05-30 2017-02-01 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6550278B2 (ja) * 2015-06-24 2019-07-24 東京エレクトロン株式会社 エッチング方法

Similar Documents

Publication Publication Date Title
JP2018157048A5 (https=)
JP4285455B2 (ja) 半導体チップの製造方法
WO2010047970A3 (en) Method and apparatus for removing photoresist
WO2009158311A3 (en) Methods and apparatus for in-situ chamber dry clean during photomask plasma etching
KR101990331B1 (ko) 에칭 방법 및 플라스마 처리 장치
US20030005943A1 (en) High pressure wafer-less auto clean for etch applications
JP2020502811A5 (https=)
JP5756974B2 (ja) 半導体装置の製造方法、半導体エッチングプロセスにおける計測方法
WO2008092936A3 (en) Method and apparatus for measuring process parameters of a plasma etch process
JP2014045063A5 (https=)
JP2010539443A5 (https=)
WO2005104186A3 (en) Method and processing system for plasma-enhanced cleaning of system components
US10854433B2 (en) In-situ real-time plasma chamber condition monitoring
TW201830516A (zh) 選擇性蝕刻速度監控器
WO2005102545A3 (en) System and method of removing chamber residues from a plasma processing system in a dry cleaning process
JP2013513949A5 (https=)
JP6708798B1 (ja) プラズマ処理装置及びそれを用いた被処理試料の処理方法
JP2020502803A5 (https=)
TW200610052A (en) Ashing method and ashing device
TW202201533A (zh) 電漿處理裝置及電漿處理方法
JP2015201618A5 (https=)
WO2006092614A3 (en) Method and apparatus for producing a coating on a substrate
JP2016167509A5 (https=)
KR101843443B1 (ko) 플라즈마 설비 및 그의 관리방법
KR20180027386A (ko) 웨이퍼 기판의 변형을 모니터링 및 제어하는 방법 및 시스템