JP2018142701A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2018142701A5 JP2018142701A5 JP2018027233A JP2018027233A JP2018142701A5 JP 2018142701 A5 JP2018142701 A5 JP 2018142701A5 JP 2018027233 A JP2018027233 A JP 2018027233A JP 2018027233 A JP2018027233 A JP 2018027233A JP 2018142701 A5 JP2018142701 A5 JP 2018142701A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- features
- stack
- stack layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/441,381 | 2017-02-24 | ||
| US15/441,381 US10079152B1 (en) | 2017-02-24 | 2017-02-24 | Method for forming planarized etch mask structures over existing topography |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018142701A JP2018142701A (ja) | 2018-09-13 |
| JP2018142701A5 true JP2018142701A5 (enExample) | 2021-04-08 |
| JP7222606B2 JP7222606B2 (ja) | 2023-02-15 |
Family
ID=63246983
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018027233A Active JP7222606B2 (ja) | 2017-02-24 | 2018-02-19 | エッチングマスク構造を形成するための方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US10079152B1 (enExample) |
| JP (1) | JP7222606B2 (enExample) |
| KR (1) | KR102253295B1 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7403961B2 (ja) * | 2019-03-19 | 2023-12-25 | キオクシア株式会社 | インプリント方法および半導体装置の製造方法 |
| JP7336303B2 (ja) * | 2019-07-31 | 2023-08-31 | キヤノン株式会社 | 物品製造方法、膜形成方法、型製造方法、物品製造システム、情報処理方法およびプログラム |
| US11567401B2 (en) * | 2019-12-20 | 2023-01-31 | Canon Kabushiki Kaisha | Nanofabrication method with correction of distortion within an imprint system |
| US11656546B2 (en) | 2020-02-27 | 2023-05-23 | Canon Kabushiki Kaisha | Exposure apparatus for uniform light intensity and methods of using the same |
| US11349061B2 (en) * | 2020-06-08 | 2022-05-31 | International Business Machines Corporation | Glassy carbon mask for immersion implant and selective laser anneal |
| US11443940B2 (en) * | 2020-06-24 | 2022-09-13 | Canon Kabushiki Kaisha | Apparatus for uniform light intensity and methods of using the same |
| US20250013153A1 (en) * | 2023-07-06 | 2025-01-09 | Tokyo Electron Limited | Method of preventing pattern collapse |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6873087B1 (en) | 1999-10-29 | 2005-03-29 | Board Of Regents, The University Of Texas System | High precision orientation alignment and gap control stages for imprint lithography processes |
| US6932934B2 (en) | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
| US7077992B2 (en) | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
| US7179396B2 (en) | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
| US7396475B2 (en) | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
| US7157036B2 (en) | 2003-06-17 | 2007-01-02 | Molecular Imprints, Inc | Method to reduce adhesion between a conformable region and a pattern of a mold |
| US7790231B2 (en) | 2003-07-10 | 2010-09-07 | Brewer Science Inc. | Automated process and apparatus for planarization of topographical surfaces |
| KR20050077751A (ko) * | 2004-01-29 | 2005-08-03 | 아사히 가라스 가부시키가이샤 | 평판 디스플레이용 외부용기 및 그것을 사용한 평판디스플레이 |
| US8076386B2 (en) | 2004-02-23 | 2011-12-13 | Molecular Imprints, Inc. | Materials for imprint lithography |
| US7998651B2 (en) | 2006-05-15 | 2011-08-16 | Asml Netherlands B.V. | Imprint lithography |
| CN101946209B (zh) * | 2008-02-18 | 2014-01-22 | 日产化学工业株式会社 | 具有环状氨基的含有硅的形成抗蚀剂下层膜的组合物 |
| US8071275B2 (en) | 2008-04-10 | 2011-12-06 | Lexmark International, Inc. | Methods for planarizing unevenness on surface of wafer photoresist layer and wafers produced by the methods |
| US8394282B2 (en) | 2008-06-09 | 2013-03-12 | Board Of Regents, The University Of Texas System | Adaptive nanotopography sculpting |
| KR101821705B1 (ko) * | 2011-09-06 | 2018-01-25 | 주식회사 동진쎄미켐 | 페놀계 자가가교 고분자 및 이를 포함하는 레지스트 하층막 조성물 |
| JP2013065725A (ja) * | 2011-09-16 | 2013-04-11 | Toshiba Corp | パターン形成方法 |
| SG11201404229YA (en) * | 2012-01-19 | 2014-08-28 | Brewer Science Inc | Nonpolymeric antireflection compositions containing adamantyl groups |
| JP6495283B2 (ja) | 2013-08-19 | 2019-04-03 | ボード・オブ・リージエンツ,ザ・ユニバーシテイ・オブ・テキサス・システム | ナノメータスケール精度を有するユーザ定義プロファイルのプログラム可能な薄膜蒸着 |
| JP6323456B2 (ja) * | 2013-09-11 | 2018-05-16 | Jsr株式会社 | 多層レジストプロセス用無機膜形成組成物及びパターン形成方法 |
| JPWO2015114960A1 (ja) * | 2014-01-30 | 2017-03-23 | ソニー株式会社 | 表示装置および電子機器 |
-
2017
- 2017-02-24 US US15/441,381 patent/US10079152B1/en active Active
-
2018
- 2018-02-13 KR KR1020180017407A patent/KR102253295B1/ko active Active
- 2018-02-19 JP JP2018027233A patent/JP7222606B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2018142701A5 (enExample) | ||
| US7911034B2 (en) | Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers | |
| US8450833B2 (en) | Spacer double patterning that prints multiple CD in front-end-of-line | |
| US9373580B2 (en) | Dual hard mask lithography process | |
| US7497958B2 (en) | Methods of forming capacitors | |
| TWI707381B (zh) | 反調圖案形成之方法和製造積體裝置的方法 | |
| JP2012508978A5 (enExample) | ||
| JP2013519236A5 (enExample) | ||
| JP2013257593A5 (ja) | 転写用マスクの製造方法及び半導体装置の製造方法 | |
| TW201719755A (zh) | 特徵尺寸縮減技術(二) | |
| US7846345B2 (en) | Method of manufacturing an imprinting template using a semiconductor manufacturing process and the imprinting template obtained | |
| TW200901272A (en) | Method for forming fine patterns in semiconductor device | |
| JP5959833B2 (ja) | 側壁イメージ転写からパターンを作る改善された方法 | |
| JP2009099792A5 (enExample) | ||
| KR20190101307A (ko) | 60nm 이하 mram 디바이스용 극대 높이 최상 전극을 규정하기 위한 금속/유전체/금속 하이브리드 하드 마스크 | |
| US7060625B2 (en) | Imprint stamp | |
| CN114334619A (zh) | 半导体结构的形成方法 | |
| CN101246307A (zh) | 使用半导体工艺制造压印模板的方法及所制得的压印模板 | |
| CN109216167B (zh) | 图案化方法 | |
| JP2021503715A (ja) | 半導体デバイス内のアモルファス・シリコン・ハードマスク上のレジスト層をパターニングするための方法、アモルファス・シリコン・ハードマスクのレジスト付着を増大させるための方法、および構造 | |
| TWI335048B (en) | Method for fabricating a fine pattern in a semiconductor device | |
| JP6123242B2 (ja) | パターン形成方法 | |
| JP5937929B2 (ja) | インプリントモールドの製造方法 | |
| JP2014112655A (ja) | ナノインプリントモールドおよびその製造方法 | |
| CN113078048B (zh) | 掩膜版图形、半导体结构及其形成方法 |