JP2018142701A5 - - Google Patents

Download PDF

Info

Publication number
JP2018142701A5
JP2018142701A5 JP2018027233A JP2018027233A JP2018142701A5 JP 2018142701 A5 JP2018142701 A5 JP 2018142701A5 JP 2018027233 A JP2018027233 A JP 2018027233A JP 2018027233 A JP2018027233 A JP 2018027233A JP 2018142701 A5 JP2018142701 A5 JP 2018142701A5
Authority
JP
Japan
Prior art keywords
layer
substrate
features
stack
stack layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2018027233A
Other languages
English (en)
Japanese (ja)
Other versions
JP2018142701A (ja
JP7222606B2 (ja
Filing date
Publication date
Priority claimed from US15/441,381 external-priority patent/US10079152B1/en
Application filed filed Critical
Publication of JP2018142701A publication Critical patent/JP2018142701A/ja
Publication of JP2018142701A5 publication Critical patent/JP2018142701A5/ja
Application granted granted Critical
Publication of JP7222606B2 publication Critical patent/JP7222606B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2018027233A 2017-02-24 2018-02-19 エッチングマスク構造を形成するための方法 Active JP7222606B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/441,381 2017-02-24
US15/441,381 US10079152B1 (en) 2017-02-24 2017-02-24 Method for forming planarized etch mask structures over existing topography

Publications (3)

Publication Number Publication Date
JP2018142701A JP2018142701A (ja) 2018-09-13
JP2018142701A5 true JP2018142701A5 (enExample) 2021-04-08
JP7222606B2 JP7222606B2 (ja) 2023-02-15

Family

ID=63246983

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018027233A Active JP7222606B2 (ja) 2017-02-24 2018-02-19 エッチングマスク構造を形成するための方法

Country Status (3)

Country Link
US (1) US10079152B1 (enExample)
JP (1) JP7222606B2 (enExample)
KR (1) KR102253295B1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7403961B2 (ja) * 2019-03-19 2023-12-25 キオクシア株式会社 インプリント方法および半導体装置の製造方法
JP7336303B2 (ja) * 2019-07-31 2023-08-31 キヤノン株式会社 物品製造方法、膜形成方法、型製造方法、物品製造システム、情報処理方法およびプログラム
US11567401B2 (en) * 2019-12-20 2023-01-31 Canon Kabushiki Kaisha Nanofabrication method with correction of distortion within an imprint system
US11656546B2 (en) 2020-02-27 2023-05-23 Canon Kabushiki Kaisha Exposure apparatus for uniform light intensity and methods of using the same
US11349061B2 (en) * 2020-06-08 2022-05-31 International Business Machines Corporation Glassy carbon mask for immersion implant and selective laser anneal
US11443940B2 (en) * 2020-06-24 2022-09-13 Canon Kabushiki Kaisha Apparatus for uniform light intensity and methods of using the same
US20250013153A1 (en) * 2023-07-06 2025-01-09 Tokyo Electron Limited Method of preventing pattern collapse

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7790231B2 (en) 2003-07-10 2010-09-07 Brewer Science Inc. Automated process and apparatus for planarization of topographical surfaces
KR20050077751A (ko) * 2004-01-29 2005-08-03 아사히 가라스 가부시키가이샤 평판 디스플레이용 외부용기 및 그것을 사용한 평판디스플레이
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7998651B2 (en) 2006-05-15 2011-08-16 Asml Netherlands B.V. Imprint lithography
WO2009104552A1 (ja) 2008-02-18 2009-08-27 日産化学工業株式会社 環状アミノ基を有するシリコン含有レジスト下層膜形成組成物
US8071275B2 (en) 2008-04-10 2011-12-06 Lexmark International, Inc. Methods for planarizing unevenness on surface of wafer photoresist layer and wafers produced by the methods
KR101653195B1 (ko) 2008-06-09 2016-09-01 보드 오브 리전츠 더 유니버시티 오브 텍사스 시스템 적응적 나노토포그래피 형상제작
KR101821705B1 (ko) * 2011-09-06 2018-01-25 주식회사 동진쎄미켐 페놀계 자가가교 고분자 및 이를 포함하는 레지스트 하층막 조성물
JP2013065725A (ja) * 2011-09-16 2013-04-11 Toshiba Corp パターン形成方法
EP2805347B1 (en) 2012-01-19 2018-03-07 Brewer Science, Inc. Nonpolymeric antireflection compositions containing adamantyl groups
JP6495283B2 (ja) 2013-08-19 2019-04-03 ボード・オブ・リージエンツ，ザ・ユニバーシテイ・オブ・テキサス・システム ナノメータスケール精度を有するユーザ定義プロファイルのプログラム可能な薄膜蒸着
JP6323456B2 (ja) 2013-09-11 2018-05-16 Jsr株式会社 多層レジストプロセス用無機膜形成組成物及びパターン形成方法
WO2015114960A1 (ja) * 2014-01-30 2015-08-06 ソニー株式会社 表示装置および電子機器

Similar Documents

Publication Publication Date Title
JP2018142701A5 (enExample)
US7911034B2 (en) Techniques for precision pattern transfer of carbon nanotubes from photo mask to wafers
US8450833B2 (en) Spacer double patterning that prints multiple CD in front-end-of-line
US9373580B2 (en) Dual hard mask lithography process
US7497958B2 (en) Methods of forming capacitors
TWI707381B (zh) 反調圖案形成之方法和製造積體裝置的方法
JP2005535119A5 (enExample)
JP2012508978A5 (enExample)
JP2013519236A5 (enExample)
JP2013257593A5 (ja) 転写用マスクの製造方法及び半導体装置の製造方法
US7846345B2 (en) Method of manufacturing an imprinting template using a semiconductor manufacturing process and the imprinting template obtained
TW200901272A (en) Method for forming fine patterns in semiconductor device
EP3557637B1 (en) Metal/dielectric/metal hybrid hard mask to define ultra-large height top electrode for sub 60 nm mram devices
JP2012138570A (ja) 側壁イメージ転写からパターンを作る改善された方法
CN114334619A (zh) 半导体结构的形成方法
US7060625B2 (en) Imprint stamp
JP6957281B2 (ja) テンプレートの作製方法、および半導体装置の製造方法
CN101246307A (zh) 使用半导体工艺制造压印模板的方法及所制得的压印模板
CN104167348A (zh) 形成间隔物图案掩模的方法
CN109216167B (zh) 图案化方法
JP2021503715A (ja) 半導体デバイス内のアモルファス・シリコン・ハードマスク上のレジスト層をパターニングするための方法、アモルファス・シリコン・ハードマスクのレジスト付着を増大させるための方法、および構造
TWI335048B (en) Method for fabricating a fine pattern in a semiconductor device
JP6123242B2 (ja) パターン形成方法
JP2007287951A (ja) 基板の加工方法、パターン領域を有する部材の製造方法
JP5937929B2 (ja) インプリントモールドの製造方法