JP2018123337A - 高結晶質導電性ポリマー、その製造方法およびそれを含む物品 - Google Patents
高結晶質導電性ポリマー、その製造方法およびそれを含む物品 Download PDFInfo
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Abstract
Description
この実施例は高結晶質のサンプルを製造する方法を示し、かつ商業的におよび科学文献において入手可能な他の同様の結晶質生成物と結晶化度を比較するために行われた。この実施例は、上述の結晶化の方法を用いて達成されうる高水準の結晶化度も示す。以下に詳述されるボトムゲート型電界効果トランジスタを使用して電気的特性も測定された。
この実施例は、本方法によって製造されたポリアルキルチオフェンサンプル、および文献に記載されている他の方法によって製造されたもの(比較例)の結晶化度を詳述する。
**240℃で溶融され、次いで150℃で5分間クエンチされたサンプルで得られた結晶化度に正規化された結晶化度。
**240℃で溶融され、次いで150℃で5分間クエンチされたサンプルで得られた結晶化度に正規化された結晶化度。
Claims (18)
- レジオレギュラーポリアルキルチオフェンおよび/またはレジオレギュラーポリ[2,5−ビス(3−アルキルチオフェン−2−イル)チエノ(3,2−b)チオフェン]を含む組成物であって、
前記組成物は溶融され、次いで前記組成物の融点とガラス転移温度との間の温度に冷却され;
前記組成物は、溶融および別個の同等の組成物の融点とガラス転移温度との間の温度への冷却を伴わない方法によって結晶化される別個の同等の組成物の結晶化度の量よりも少なくとも50%高い結晶化度の量を有する;
組成物。 - 前記レジオレギュラーポリアルキルチオフェンがポリ(3−ヘキシルチオフェン)である請求項2の組成物。
- 前記レジオレギュラーポリアルキルチオフェンが式(VI)
の構造を有する請求項1の組成物。 - R1およびR2がヘキシル基である請求項4の組成物。
- R1がヘキシル基であり、一方、R2が水素である請求項4の組成物。
- R1およびR2がヘキシル基である請求項7の組成物。
- R1がヘキシル基であり、一方、R2が水素である請求項7の組成物。
- R1およびR2がヘキサデシル基またはヘキシルデシル基である請求項10の組成物。
- R1がヘキシルデシル基またはヘキサデシル基であり、一方、R2が水素である請求項10の組成物。
- 前記ポリアルキルチオフェンが他の電気絶縁性ポリマーと、または他の導電性もしくは半導体ポリマーと共重合されうる請求項10の組成物。
- 請求項1の組成物から製造された物品。
- レジオレギュラーポリアルキルチオフェンまたはレジオレギュラーポリ[2,5−ビス(3−アルキルチオフェン−2−イル)チエノ(3,2−b)チオフェン]を溶媒中に溶解させて溶液を形成し;
前記溶液を基体上に配置し;
前記レジオレギュラーポリアルキルチオフェンまたはレジオレギュラーポリ[2,5−ビス(3−アルキルチオフェン−2−イル)チエノ(3,2−b)チオフェン]を溶融させ;並びに、
溶融した前記レジオレギュラーポリアルキルチオフェンまたはレジオレギュラーポリ[2,5−ビス(3−アルキルチオフェン−2−イル)チエノ(3,2−b)チオフェン]を、前記レジオレギュラーポリアルキルチオフェンまたはレジオレギュラーポリ[2,5−ビス(3−アルキルチオフェン−2−イル)チエノ(3,2−b)チオフェン]のガラス転移温度と融点温度との間の温度にクエンチングする;
ことを含む薄膜を製造する方法。 - 前記クエンチングが、前記融点温度より50℃〜175℃低い温度で行われる請求項15の方法。
- 前記レジオレギュラーポリアルキルチオフェンまたはレジオレギュラーポリ[2,5−ビス(3−アルキルチオフェン−2−イル)チエノ(3,2−b)チオフェン]を、前記ガラス転移温度と前記融点温度との間の温度でアニーリングすることをさらに含む、請求項15の方法。
- 前記基体上に配置された前記溶液から前記溶媒を蒸発させることをさらに含む請求項15の方法。
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