JP2009543323A - 配合ポリマー電界効果トランジスタ - Google Patents
配合ポリマー電界効果トランジスタ Download PDFInfo
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
【選択図】図10
Description
Claims (51)
- 半導体本体を形成するための方法であって、
有機半導体材料と結合剤材料との混合物を形成する工程、
前記半導体材料を少なくとも部分的に固化させる工程、および
前記半導体材料を前記結合剤材料から少なくとも部分的に分離させるように、前記結合剤材料を結晶化させる工程、
を具備する方法。 - 前記半導体材料を少なくとも部分的に固化させる工程は、前記結合剤を結晶化させる工程の前に行われる、請求項1に記載の方法。
- 前記半導体材料を少なくとも部分的に固化させる工程は、前記半導体材料を結晶化させる工程を含む、請求項1または2に記載の方法。
- 前記結合剤材料を結晶化させる工程は、前記混合物の温度を下げる工程を含む、請求項1〜3のいずれか1項に記載の方法。
- 前記有機半導体材料は半導体ポリマーである、請求項1〜4のいずれか1項に記載の方法。
- 前記結合剤材料は半結晶性ポリマーである、請求項1〜5のいずれか1項に記載の方法。
- 前記有機半導体ポリマーは前記ポリマー結合剤とブロックコポリマーを形成する、請求項5に従属する請求項6に記載の方法。
- 前記結合剤材料は半導体性である、請求項1〜7のいずれか1項に記載の方法。
- 前記混合物は溶媒を含んでおり、前記方法は、さらに、前記結合剤材料を結晶化させる工程の前に前記溶媒を除去する工程を具備する、請求項1〜8のいずれか1項に記載の方法。
- 前記溶媒を除去する工程は、前記半導体材料を固化させる工程の前に行われる、請求項1〜9のいずれか1項に記載の方法。
- 前記有機半導体は、ポリ−3−ヘキシルチオフェン(P3HT)である、請求項1〜10のいずれか1項に記載の方法。
- 前記有機半導体は、α−クウォーターチオフェン(4T)である、請求項1〜11のいずれか1項に記載の方法。
- 前記結合剤は、イソタクチックポリスチレン(i−PS)である、請求項1〜12のいずれか1項に記載の方法。
- 前記結合剤は、高密度ポリエチレン(HDPE)である、請求項1〜13のいずれか1項に記載の方法。
- 半導体本体を形成するための方法であって、
有機半導体材料と結合剤材料との混合物を形成する工程、
前記半導体材料を少なくとも部分的に固化させる工程、および
前記結合剤材料と隣接の媒体との界面で前記半導体材料を濃縮させるように、前記結合剤材料を結晶化させる工程、
を具備する方法。 - 前記結合剤材料の界面は、結合剤材料の隣接し合う層間の界面を含む、請求項15に記載の方法。
- 半導体本体を形成するための方法であって、
有機半導体材料と結合剤材料との混合物を形成する工程、および
前記半導体材料を前記結合剤材料から分離させるように、前記結合剤材料を合体させる工程、
を具備する方法。 - さらに、前記結合剤材料を合体させる工程の前に、前記半導体材料を固化させる工程を具備する請求項17に記載の方法。
- 前記半導体材料を固化させる工程は、前記半導体材料を結晶化させる工程を含む、請求項18に記載の方法。
- 前記結合剤材料を合体させる工程は、前記混合物の温度を下げる工程を含む、請求項17〜19のいずれか1項に記載の方法。
- 前記分離された半導体材料および結合剤材料は層状構造を形成する、請求項17〜20のいずれか1項に記載の方法。
- さらに、前記有機半導体材料と前記結合剤材料との混合物を基板上に蒸着する工程を具備する、請求項17〜21のいずれか1項に記載の方法。
- 前記結合剤材料を合体させる工程は、前記結合剤材料を結晶化させる工程を含む、請求項17〜22のいずれか1項に記載の方法。
- 半導体本体を備える電子デバイスであって、前記半導体本体は、
有機半導体材料と、
結晶性結合剤材料とを含む、
電子デバイス。 - 前記有機半導体材料は、前記半導体本体と隣接の媒体との界面で主に濃縮される、請求項24に記載の電子デバイス。
- 前記半導体本体は相分離される、請求項24または25に記載の電子デバイス。
- 前記結晶性結合剤材料は誘電体である、請求項24〜26のいずれか1項に記載の電子デバイス。
- 前記結晶性結合剤材料は半導体または伝導体である、請求項24〜26のいずれか1項に記載の電子デバイス。
- 前記有機半導体材料は半結晶性ポリマーである、請求項24〜28のいずれか1項に記載のデバイス。
- 前記結晶性結合剤材料は半結晶性ポリマーである、請求項24〜29のいずれか1項に記載のデバイス。
- 前記有機半導体材料は、前記結晶性結合剤材料よりも高い融点を持つ、請求項24〜30のいずれか1項に記載のデバイス。
- 前記結晶性結合剤材料は球状の微細構造を示す、請求項24〜31のいずれか1項に記載のデバイス。
- 前記半導体本体における前記有機半導体材料の濃度は50重量%未満である、請求項24〜32のいずれか1項に記載のデバイス。
- 前記半導体本体における前記有機半導体材料の濃度は20重量%未満である、請求項24〜32のいずれか1項に記載のデバイス。
- 前記半導体本体における前記有機半導体材料の濃度は10重量%未満である、請求項24〜32のいずれか1項に記載のデバイス。
- 前記半導体本体は幾何学的な面を定義し、前記有機半導体材料はラメラ構造を持ち、前記ラメラ構造は概して前記面に存在するように配向される、請求項24〜35のいずれか1項に記載のデバイス。
- 前記有機半導体は、ポリ−3−ヘキシルチオフェン(P3HT)である、請求項24〜36のいずれか1項に記載のデバイス。
- 前記有機半導体は、α−クウォーターチオフェン(4T)である、請求項24〜36のいずれか1項に記載のデバイス。
- 前記結合剤は、イソタクチックポリスチレン(i−PS)である、請求項24〜38のいずれか1項に記載のデバイス。
- 前記半結晶性ポリマーは、高密度ポリエチレン(HDPE)である、請求項24〜39のいずれか1項に記載のデバイス。
- 前記デバイスはトランジスタである、請求項24〜40のいずれか1項に記載のデバイス。
- 前記半導体本体と隣接の媒体との界面で濃縮される前記有機半導体材料は、前記トランジスタのソース電極から前記トランジスタのドレイン電極まで前記有機半導体材料を通って電荷輸送のための連続的な経路を構成する、請求項25に従属する請求項41に記載のデバイス。
- 前記デバイスはダイオードである、請求項24〜41のいずれか1項に記載のデバイス。
- 前記デバイスは光起電ダイオードである、請求項43に記載のデバイス。
- 結合剤および有機半導体材料を含む半導体層であって、前記有機半導体材料はラメラ区域内に濃縮され、前記ラメラ区域は前記結合剤から分離し前記層の面に概して存在するように配向される、半導体層。
- 有機半導体材料および半結晶性ポリマー結合剤を含むプラスチック基板。
- 前記基板における前記有機半導体材料の濃度は50重量%未満である、請求項46に記載のプラスチック基板。
- 前記基板における前記有機半導体材料の濃度は20重量%未満である、請求項46に記載のプラスチック基板。
- 前記基板における前記有機半導体材料の濃度は10重量%未満である、請求項46に記載のプラスチック基板。
- 前記有機半導体材料は半導体ポリマーである、請求項46〜49のいずれか1項に記載のプラスチック基板。
- 前記基板はフレキシブルである、請求項46〜50のいずれか1項に記載のプラスチック基板。
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GBGB0612929.0A GB0612929D0 (en) | 2006-06-29 | 2006-06-29 | High-performance organic field-effect transistors based on dilute, crystalline-crystalline polymer blends and block copolymers |
GB0612929.0 | 2006-06-29 | ||
PCT/GB2007/002460 WO2008001123A1 (en) | 2006-06-29 | 2007-06-29 | Blended polymer fets |
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JP2009543323A true JP2009543323A (ja) | 2009-12-03 |
JP5329399B2 JP5329399B2 (ja) | 2013-10-30 |
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US (2) | US8518738B2 (ja) |
EP (1) | EP2036141B1 (ja) |
JP (1) | JP5329399B2 (ja) |
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WO2016047587A1 (ja) * | 2014-09-25 | 2016-03-31 | 富士フイルム株式会社 | 有機電界効果トランジスタ、有機半導体結晶の製造方法、及び、有機半導体素子 |
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JP2019527931A (ja) * | 2016-07-13 | 2019-10-03 | 光州科学技術院Gwangju Insttute Of Science And Technology | 共役系高分子と絶縁体高分子を利用した複合高分子半導体およびその製造方法 |
JP2022091095A (ja) * | 2020-12-08 | 2022-06-20 | 住友化学株式会社 | 組成物、膜、有機光電変換素子、及び光検出素子 |
JP7257440B2 (ja) | 2020-12-08 | 2023-04-13 | 住友化学株式会社 | 組成物、膜、有機光電変換素子、及び光検出素子 |
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US20140027745A1 (en) | 2014-01-30 |
JP5329399B2 (ja) | 2013-10-30 |
US20100044684A1 (en) | 2010-02-25 |
EP2036141A1 (en) | 2009-03-18 |
GB0612929D0 (en) | 2006-08-09 |
EP2036141B1 (en) | 2015-09-30 |
WO2008001123A1 (en) | 2008-01-03 |
US8518738B2 (en) | 2013-08-27 |
US9614158B2 (en) | 2017-04-04 |
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