JPWO2016031968A1 - 半導体膜の製造方法、半導体膜及び電界効果トランジスタ - Google Patents
半導体膜の製造方法、半導体膜及び電界効果トランジスタ Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 179
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 230000005669 field effect Effects 0.000 title claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 56
- 229920000642 polymer Polymers 0.000 claims abstract description 25
- 239000002861 polymer material Substances 0.000 claims abstract description 25
- 239000011248 coating agent Substances 0.000 claims description 45
- 238000000576 coating method Methods 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 43
- 239000002904 solvent Substances 0.000 claims description 29
- 239000013078 crystal Substances 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 116
- 238000000034 method Methods 0.000 description 19
- 239000007788 liquid Substances 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 16
- 238000012986 modification Methods 0.000 description 16
- 230000004048 modification Effects 0.000 description 16
- 238000005259 measurement Methods 0.000 description 12
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 7
- 239000004926 polymethyl methacrylate Substances 0.000 description 7
- QUBJDMPBDURTJT-UHFFFAOYSA-N 3-chlorothiophene Chemical compound ClC=1C=CSC=1 QUBJDMPBDURTJT-UHFFFAOYSA-N 0.000 description 6
- 229920001167 Poly(triaryl amine) Polymers 0.000 description 6
- 238000005266 casting Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 238000001000 micrograph Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000010287 polarization Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 4
- JTPNRXUCIXHOKM-UHFFFAOYSA-N 1-chloronaphthalene Chemical compound C1=CC=C2C(Cl)=CC=CC2=C1 JTPNRXUCIXHOKM-UHFFFAOYSA-N 0.000 description 3
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- -1 etc.) Chemical compound 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000000879 optical micrograph Methods 0.000 description 3
- 229920000314 poly p-methyl styrene Polymers 0.000 description 3
- CXWXQJXEFPUFDZ-UHFFFAOYSA-N tetralin Chemical compound C1=CC=C2CCCCC2=C1 CXWXQJXEFPUFDZ-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000001771 vacuum deposition Methods 0.000 description 3
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000003849 aromatic solvent Substances 0.000 description 2
- 238000000089 atomic force micrograph Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 229920002239 polyacrylonitrile Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- SSLVPYVFJJMPPZ-UHFFFAOYSA-N 2,5,19,21-tetrazahexacyclo[12.11.0.03,12.04,9.017,25.018,22]pentacosa-1,3(12),4(9),5,7,10,14,16,18,20,22,24-dodecaene Chemical compound N1=CN=C2C1=CC=C1C2=CC=C2CC=3C=CC=4C=CC=NC=4C=3N=C21 SSLVPYVFJJMPPZ-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005162 X-ray Laue diffraction Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 125000005605 benzo group Chemical group 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000011118 polyvinyl acetate Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(II) oxide Inorganic materials [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- FMZQNTNMBORAJM-UHFFFAOYSA-N tri(propan-2-yl)-[2-[13-[2-tri(propan-2-yl)silylethynyl]pentacen-6-yl]ethynyl]silane Chemical compound C1=CC=C2C=C3C(C#C[Si](C(C)C)(C(C)C)C(C)C)=C(C=C4C(C=CC=C4)=C4)C4=C(C#C[Si](C(C)C)(C(C)C)C(C)C)C3=CC2=C1 FMZQNTNMBORAJM-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
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Abstract
Description
(全体構成)
図1に示す電界効果トランジスタ(以下、FETという。)としての有機FET10Aは、ゲート電極12、ゲート絶縁膜14、半導体膜としての有機半導体膜16A、ソース電極18、ドレイン電極20を備える。本実施形態に係る有機FET10Aは、有機半導体膜16Aに対しゲート電極12が下側に配置されたいわゆるボトムゲート型である。また、有機FET10Aは、有機半導体膜16Aに対しソース電極18及びドレイン電極20が上側に配置されたトップコンタクト型である。
次に有機半導体膜16Aの製造方法について説明する。まず有機半導体材料と、高分子材料とが溶媒に溶解した塗布液を作製する。溶媒は、例えば、クロロベンゼン(CB:chlorobenzene)、3-クロロチオフェン(3CT:3-chlorothiophene)、1-クロロナフタレン(1CN:1-Chloronaphthalene)などのハロゲン系芳香族溶媒、ヘキサン、ヘプタンなどの炭化水素溶媒や、トルエン、キシレン、テトラリンなどの非ハロゲン系芳香族溶媒等を用いることができる。ただし、溶媒は有機半導体と高分子を両方溶かすものであればよく、上に挙げたものには限らない。
上記のように構成された有機半導体膜16Aは、有機半導体材料と、高分子材料とが溶媒に溶解した塗布液をエッジキャスト法により塗布することで、配向が揃った有機半導体膜16Aを形成することができる。したがって本実施形態によれば、従来のように製造条件が制限されないので、電荷移動度が高い有機半導体膜16Aを容易に製造することができる。
実際に、上記「製造方法」に示す手順に従い、有機半導体膜16Aを製造した。半導体材料としてC10−DNBDTを0.025重量%、高分子材料としてPMMAを0.025重量%の濃度で、溶媒としての3CT中に混合し、溶解させることにより、塗布液を作製した。
本発明は上記実施形態に限定されるものではなく、本発明の趣旨の範囲内で適宜変更することが可能である。
12 ゲート電極(基板)
14 ゲート絶縁膜(基板)
16A 有機半導体膜(半導体膜)
Claims (9)
- 半導体材料で形成された1又は2以上の半導体部と、高分子材料で形成された1又は2以上の高分子部とを有し、前記半導体部と前記高分子部とが、隣接して一体化されていることを特徴とする半導体膜。
- 前記半導体部は、有機半導体材料で形成されていることを特徴とする請求項1記載の半導体膜。
- 前記半導体部と前記高分子部は、それぞれ層状に形成されており、厚さ方向に積層されていることを特徴とする請求項1又は2記載の半導体膜。
- 前記半導体部は、配向軸の角度差が10度以内であることを特徴とする請求項1〜3のいずれか1項記載の半導体膜。
- 前記半導体部は、単結晶であることを特徴とする請求項1〜4のいずれか1項記載の半導体膜。
- 前記半導体部は、結晶の長さが200μm以上であることを特徴とする請求項5記載の半導体膜。
- 請求項1〜6のいずれか1項記載の半導体膜を備えることを特徴とする電界効果トランジスタ。
- 半導体材料と高分子材料とが溶媒に溶解している塗布液を、前記塗布液を基板に供給するノズル又は前記基板を一方向へ移動させながら、前記基板上に塗布する工程を備え、前記溶媒が蒸発した後、前記半導体材料で形成された半導体部と、前記高分子材料で形成された高分子部とが、隣接して一体化することにより、配向が揃った半導体膜が形成されることを特徴とする半導体膜の製造方法。
- 前記ノズルから供給された前記塗布液は、前記塗布液を前記基板上に塗布する工程後、前記高分子材料が前記有機半導体材料を流動し得る状態に保持すると共に、前記基板の移動方向に沿って、前記塗布液に含まれる前記溶媒が蒸発し、これにより前記有機半導体材料が順に結晶化していくことを特徴とする請求項8記載の半導体膜の製造方法。
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CN106684251B (zh) * | 2016-12-09 | 2018-06-01 | 武汉华星光电技术有限公司 | 柔性垂直沟道有机薄膜晶体管及其制作方法 |
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JP2012033904A (ja) * | 2010-06-30 | 2012-02-16 | National Institute For Materials Science | 有機半導体薄膜形成方法、半導体素子及び有機電界効果トランジスタ |
JP2013058680A (ja) * | 2011-09-09 | 2013-03-28 | National Institute For Materials Science | 有機半導体単結晶形成方法及び有機半導体デバイス |
WO2013172143A1 (ja) * | 2012-05-16 | 2013-11-21 | ソニー株式会社 | 半導体デバイス、表示装置、電子機器、及び、半導体デバイスの製造方法 |
WO2014008395A1 (en) * | 2012-07-03 | 2014-01-09 | University Of Vermont And State Agricultural College | Methods for forming one or more crystalline layers on a substrate |
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JP2005243822A (ja) * | 2004-02-25 | 2005-09-08 | Seiko Epson Corp | 薄膜トランジスタの製造方法、薄膜トランジスタ、薄膜トランジスタ回路、電子デバイスおよび電子機器 |
JP2006013492A (ja) * | 2004-06-24 | 2006-01-12 | Palo Alto Research Center Inc | 半導層および絶縁層を形成するために混合溶液を使ってボトムゲート型薄膜トランジスタを形成する改良された方法 |
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JP2012033904A (ja) * | 2010-06-30 | 2012-02-16 | National Institute For Materials Science | 有機半導体薄膜形成方法、半導体素子及び有機電界効果トランジスタ |
JP2013058680A (ja) * | 2011-09-09 | 2013-03-28 | National Institute For Materials Science | 有機半導体単結晶形成方法及び有機半導体デバイス |
WO2013172143A1 (ja) * | 2012-05-16 | 2013-11-21 | ソニー株式会社 | 半導体デバイス、表示装置、電子機器、及び、半導体デバイスの製造方法 |
WO2014008395A1 (en) * | 2012-07-03 | 2014-01-09 | University Of Vermont And State Agricultural College | Methods for forming one or more crystalline layers on a substrate |
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EP3188219A4 (en) | 2018-05-02 |
US20180053701A1 (en) | 2018-02-22 |
WO2016031968A1 (ja) | 2016-03-03 |
EP3188219A1 (en) | 2017-07-05 |
JP6179930B2 (ja) | 2017-08-16 |
US10256164B2 (en) | 2019-04-09 |
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