JP5329399B2 - 配合ポリマー電界効果トランジスタ - Google Patents
配合ポリマー電界効果トランジスタ Download PDFInfo
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- JP5329399B2 JP5329399B2 JP2009517414A JP2009517414A JP5329399B2 JP 5329399 B2 JP5329399 B2 JP 5329399B2 JP 2009517414 A JP2009517414 A JP 2009517414A JP 2009517414 A JP2009517414 A JP 2009517414A JP 5329399 B2 JP5329399 B2 JP 5329399B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/191—Deposition of organic active material characterised by provisions for the orientation or alignment of the layer to be deposited
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/488—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising a layer of composite material having interpenetrating or embedded materials, e.g. a mixture of donor and acceptor moieties, that form a bulk heterojunction
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Composite Materials (AREA)
- Thin Film Transistor (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
Claims (21)
- 半導体本体を形成するための方法であって、
有機半導体材料と結合剤材料との混合物を形成する工程、
前記半導体材料を少なくとも部分的に固化させる工程、および
その後に前記結合剤材料を結晶化させる工程であって、前記半導体材料を前記結合剤材料から少なくとも部分的に分離させるように、かつ前記半導体本体と隣接の媒体との界面で前記半導体材料を濃縮させるように、前記結合剤材料を結晶化させる工程、
を具備する方法。 - 前記半導体材料を少なくとも部分的に固化させる工程は、前記半導体材料を結晶化させる工程を含む、請求項1に記載の方法。
- 前記結合剤材料を結晶化させる工程は、前記混合物の温度を下げる工程を含む、請求項1または2に記載の方法。
- 前記有機半導体材料は半導体ポリマーである、請求項1〜3のいずれか1項に記載の方法。
- 前記結合剤材料は半結晶性ポリマーである、請求項1〜4のいずれか1項に記載の方法。
- 前記有機半導体ポリマーは前記ポリマー結合剤とブロックコポリマーを形成する、請求項4に従属する請求項5に記載の方法。
- 前記結合剤材料は半導体性である、請求項1〜6のいずれか1項に記載の方法。
- 前記混合物は溶媒を含んでおり、前記方法は、さらに、前記結合剤材料を結晶化させる工程の前に前記溶媒を除去する工程を具備する、請求項1〜7のいずれか1項に記載の方法。
- 前記溶媒を除去する工程は、前記半導体材料を固化させる工程の前に行われる、請求項1〜8のいずれか1項に記載の方法。
- 半導体本体を備える電子デバイスであって、前記半導体本体は、
有機半導体材料と、
結晶性結合剤材料とを含み、
前記半導体材料は、前記結合剤材料から少なくとも部分的に分離され、かつ前記半導体本体と隣接の媒体との界面で濃縮されてなる、
電子デバイス。 - 前記結晶性結合剤材料は誘電体である、請求項10に記載の電子デバイス。
- 前記結晶性結合剤材料は半導体または伝導体である、請求項10に記載の電子デバイス。
- 前記有機半導体材料は半結晶性ポリマーである、請求項10〜12のいずれか1項に記載のデバイス。
- 前記結晶性結合剤材料は半結晶性ポリマーである、請求項10〜13のいずれか1項に記載のデバイス。
- 前記有機半導体材料は、前記結晶性結合剤材料よりも高い融点を持つ、請求項10〜14のいずれか1項に記載のデバイス。
- 前記結晶性結合剤材料は球状の微細構造を示す、請求項10〜15のいずれか1項に記載のデバイス。
- 前記半導体本体における前記有機半導体材料の濃度は10重量%未満である、請求項10〜16のいずれか1項に記載のデバイス。
- 前記デバイスはトランジスタである、請求項10〜17のいずれか1項に記載のデバイス。
- 前記半導体本体と隣接の媒体との界面で濃縮される前記有機半導体材料は、前記トランジスタのソース電極から前記トランジスタのドレイン電極まで前記有機半導体材料を通って電荷輸送のための連続的な経路を構成する、請求項18に記載のデバイス。
- 前記デバイスは光起電ダイオードである、請求項10〜17のいずれか1項に記載のデバイス。
- 前記半導体本体はプラスチック基板を形成する、請求項10〜20のいずれか1項に記載のデバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0612929.0A GB0612929D0 (en) | 2006-06-29 | 2006-06-29 | High-performance organic field-effect transistors based on dilute, crystalline-crystalline polymer blends and block copolymers |
GB0612929.0 | 2006-06-29 | ||
PCT/GB2007/002460 WO2008001123A1 (en) | 2006-06-29 | 2007-06-29 | Blended polymer fets |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009543323A JP2009543323A (ja) | 2009-12-03 |
JP5329399B2 true JP5329399B2 (ja) | 2013-10-30 |
Family
ID=36888320
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009517414A Expired - Fee Related JP5329399B2 (ja) | 2006-06-29 | 2007-06-29 | 配合ポリマー電界効果トランジスタ |
Country Status (5)
Country | Link |
---|---|
US (2) | US8518738B2 (ja) |
EP (1) | EP2036141B1 (ja) |
JP (1) | JP5329399B2 (ja) |
GB (1) | GB0612929D0 (ja) |
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JP6395702B2 (ja) | 2012-04-04 | 2018-09-26 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | ジケトピロロピロールポリマーおよび小分子 |
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TWI667795B (zh) * | 2014-09-25 | 2019-08-01 | 日商富士軟片股份有限公司 | 有機場效電晶體、有機半導體結晶的製造方法及有機半導體元件 |
CN104637823B (zh) * | 2015-02-06 | 2019-07-16 | 京东方科技集团股份有限公司 | 薄膜晶体管的制备方法及薄膜晶体管、阵列基板 |
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JP6629866B2 (ja) * | 2015-09-02 | 2020-01-15 | 富士フイルム株式会社 | 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、有機半導体組成物、有機半導体膜および有機半導体膜の製造方法 |
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JP7026391B2 (ja) | 2016-05-25 | 2022-02-28 | クラップ カンパニー リミテッド | 半導体ポリマー |
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KR102542436B1 (ko) * | 2017-06-08 | 2023-06-13 | 코닝 인코포레이티드 | 다른 중합체의 유기 반도체 중합체로의 도핑 |
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GB2430546A (en) | 2005-09-20 | 2007-03-28 | Seiko Epson Corp | A semiconductor film comprising domains of an organic semiconductor and a method of its fabrication |
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JP4730623B2 (ja) * | 2008-07-24 | 2011-07-20 | ソニー株式会社 | 薄膜トランジスタ、薄膜トランジスタの製造方法、および電子機器 |
US8558109B2 (en) * | 2012-03-19 | 2013-10-15 | Xerox Corporation | Semiconductor composition for high performance organic devices |
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EP2036141A1 (en) | 2009-03-18 |
EP2036141B1 (en) | 2015-09-30 |
US20100044684A1 (en) | 2010-02-25 |
JP2009543323A (ja) | 2009-12-03 |
US9614158B2 (en) | 2017-04-04 |
GB0612929D0 (en) | 2006-08-09 |
US20140027745A1 (en) | 2014-01-30 |
WO2008001123A1 (en) | 2008-01-03 |
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