JP2018101463A5 - - Google Patents
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- Publication number
- JP2018101463A5 JP2018101463A5 JP2016245036A JP2016245036A JP2018101463A5 JP 2018101463 A5 JP2018101463 A5 JP 2018101463A5 JP 2016245036 A JP2016245036 A JP 2016245036A JP 2016245036 A JP2016245036 A JP 2016245036A JP 2018101463 A5 JP2018101463 A5 JP 2018101463A5
- Authority
- JP
- Japan
- Prior art keywords
- antenna
- antenna conductor
- lid
- inductively coupled
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004020 conductor Substances 0.000 claims description 113
- 238000012545 processing Methods 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 239000003989 dielectric material Substances 0.000 claims description 7
- 230000001939 inductive effect Effects 0.000 claims description 5
- 239000002826 coolant Substances 0.000 claims description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 35
- 239000000758 substrate Substances 0.000 description 11
- 239000007789 gas Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016245036A JP6468521B2 (ja) | 2016-12-19 | 2016-12-19 | 誘導結合型アンテナユニット及びプラズマ処理装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016245036A JP6468521B2 (ja) | 2016-12-19 | 2016-12-19 | 誘導結合型アンテナユニット及びプラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018101463A JP2018101463A (ja) | 2018-06-28 |
| JP2018101463A5 true JP2018101463A5 (https=) | 2018-08-30 |
| JP6468521B2 JP6468521B2 (ja) | 2019-02-13 |
Family
ID=62714402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016245036A Active JP6468521B2 (ja) | 2016-12-19 | 2016-12-19 | 誘導結合型アンテナユニット及びプラズマ処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6468521B2 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6708887B2 (ja) * | 2018-09-25 | 2020-06-10 | 株式会社プラズマイオンアシスト | プラズマ処理装置、アンテナ導体又は／及び導電性部材の製造方法 |
| JP7202641B2 (ja) * | 2019-03-26 | 2023-01-12 | 株式会社プラズマイオンアシスト | プラズマ処理装置およびプラズマ処理方法 |
| JP7426709B2 (ja) * | 2019-10-23 | 2024-02-02 | 株式会社イー・エム・ディー | プラズマ源 |
| EP3813092A1 (en) * | 2019-10-23 | 2021-04-28 | EMD Corporation | Plasma source |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007220594A (ja) * | 2006-02-20 | 2007-08-30 | Nissin Electric Co Ltd | プラズマ生成方法及びプラズマ生成装置並びにプラズマ処理装置 |
| US8917022B2 (en) * | 2008-05-22 | 2014-12-23 | Emd Corporation | Plasma generation device and plasma processing device |
| JP4621287B2 (ja) * | 2009-03-11 | 2011-01-26 | 株式会社イー・エム・ディー | プラズマ処理装置 |
| JP2010225296A (ja) * | 2009-03-19 | 2010-10-07 | Emd:Kk | 誘導結合型アンテナユニット及びプラズマ処理装置 |
| JP6418543B2 (ja) * | 2014-03-27 | 2018-11-07 | 株式会社プラズマイオンアシスト | プラズマ処理装置及びプラズマ処理装置用アンテナユニット |
| JP6580830B2 (ja) * | 2015-01-22 | 2019-09-25 | 株式会社Ｓｃｒｅｅｎホールディングス | プラズマ処理装置 |
-
2016
- 2016-12-19 JP JP2016245036A patent/JP6468521B2/ja active Active
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