JP2018082118A - ドーパント導入方法および熱処理方法 - Google Patents
ドーパント導入方法および熱処理方法 Download PDFInfo
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- 238000010438 heat treatment Methods 0.000 title claims abstract description 171
- 239000002019 doping agent Substances 0.000 title claims abstract description 94
- 238000000034 method Methods 0.000 title claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 227
- 239000000758 substrate Substances 0.000 claims abstract description 57
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 239000012298 atmosphere Substances 0.000 claims abstract description 43
- 239000001257 hydrogen Substances 0.000 claims abstract description 35
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 35
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 35
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 20
- 150000002431 hydrogen Chemical class 0.000 claims abstract description 12
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- 239000007789 gas Substances 0.000 claims description 53
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 9
- 230000003213 activating effect Effects 0.000 claims description 6
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 6
- 229910052736 halogen Inorganic materials 0.000 abstract description 76
- 150000002367 halogens Chemical class 0.000 abstract description 76
- 239000010408 film Substances 0.000 abstract description 54
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 15
- 239000011574 phosphorus Substances 0.000 abstract description 15
- 238000009792 diffusion process Methods 0.000 abstract description 7
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 8
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- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 6
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- 238000005259 measurement Methods 0.000 description 5
- 229910052724 xenon Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000004397 blinking Effects 0.000 description 2
- 230000003028 elevating effect Effects 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000003017 phosphorus Chemical class 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
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- 238000005422 blasting Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
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- 239000007943 implant Substances 0.000 description 1
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- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 238000012544 monitoring process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 238000003672 processing method Methods 0.000 description 1
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- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
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Abstract
Description
まず、本発明に係るドーパント導入方法を実施する際に必要となる熱処理を実行する熱処理装置について説明する。図1は、本発明に係るドーパント導入方法に使用する熱処理装置1の構成を示す縦断面図である。図1の熱処理装置1は、基板として円板形状の半導体ウェハーWに対してフラッシュ光照射を行うことによってその半導体ウェハーWを加熱するフラッシュランプアニール装置である。処理対象となる半導体ウェハーWのサイズは特に限定されるものではないが、例えばφ300mmやφ450mmである。なお、図1および以降の各図においては、理解容易のため、必要に応じて各部の寸法や数を誇張または簡略化して描いている。
次に、本発明の第2実施形態について説明する。第2実施形態の熱処理装置1の全体構成は第1実施形態と同じである。また、第2実施形態の熱処理装置1における半導体ウェハーWの処理手順も第1実施形態と概ね同じである。第2実施形態が第1実施形態と相違するのは、ハロゲンランプHLによる加熱温度T1とフラッシュ光照射時の目標温度T2との高低関係である。
次に、本発明の第3実施形態について説明する。第3実施形態の熱処理装置1の全体構成は第1実施形態と同じである。また、第3実施形態の熱処理装置1における半導体ウェハーWの処理手順も第1実施形態と概ね同じである。第3実施形態が第1実施形態と相違するのは、フラッシュ光照射前に半導体ウェハーWを降温させていない点である。
以上、本発明の実施の形態について説明したが、この発明はその趣旨を逸脱しない限りにおいて上述したもの以外に種々の変更を行うことが可能である。例えば、上記各実施形態においては、ドーパントを含む二酸化ケイ素の膜としてPSG膜21を成膜していたが、これに代えて、ドーパントとしてのボロン(B)を含むBSG(Boron Silicate Glass)膜を半導体ウェハーWの表面に成膜するようにしても良い。
3 制御部
4 ハロゲン加熱部
5 フラッシュ加熱部
6 チャンバー
7 保持部
21 PSG膜
22 ドーパント層
65 熱処理空間
74 サセプタ
75 保持プレート
77 基板支持ピン
93 コンデンサ
95 電源ユニット
96 IGBT
120 放射温度計
FL フラッシュランプ
HL ハロゲンランプ
W 半導体ウェハー
Claims (7)
- 半導体基板にドーパントを導入して活性化させるドーパント導入方法であって、
半導体基板の表面にドーパントを含む二酸化ケイ素の膜を形成する成膜工程と、
水素を含む雰囲気中にて前記半導体基板を第1の温度に1秒以上維持して前記ドーパントを含む二酸化ケイ素の膜から前記半導体基板の表面に前記ドーパントを拡散させる第1加熱工程と、
前記水素を含む雰囲気中にて前記半導体基板に1秒未満の照射時間にてフラッシュ光を照射して前記半導体基板の表面を第2の温度に加熱して前記ドーパントを活性化させる第2加熱工程と、
を備えることを特徴とするドーパント導入方法。 - 請求項1記載のドーパント導入方法において、
前記第1加熱工程の後、前記半導体基板を前記第1の温度よりも低い第3の温度に冷却した後に前記第2加熱工程を実行することを特徴とするドーパント導入方法。 - 請求項2記載のドーパント導入方法において、
前記第2の温度は前記第1の温度よりも低温であることを特徴とするドーパント導入方法。 - 請求項1または請求項2記載のドーパント導入方法において、
前記第2の温度は前記第1の温度よりも高温であることを特徴とするドーパント導入方法。 - 請求項1から請求項4のいずれかに記載のドーパント導入方法において、
前記ドーパントを含む二酸化ケイ素の膜はPSG膜またはBSG膜であることを特徴とするドーパント導入方法。 - 請求項1から請求項5のいずれかに記載のドーパント導入方法において、
前記水素を含む雰囲気は、窒素ガスに水素ガスを混合した混合ガスの雰囲気であることを特徴とするドーパント導入方法。 - その表面にドーパントを含む二酸化ケイ素の膜が成膜された半導体基板を水素を含む雰囲気中にて、第1の温度に1秒以上維持して前記二酸化ケイ素の膜から前記半導体基板の表面に前記ドーパントを拡散させる第1加熱工程と、
前記水素を含む雰囲気中にて前記半導体基板に1秒未満の照射時間にてフラッシュ光を照射して前記半導体基板の表面を第2の温度に加熱して前記ドーパントを活性化させる第2加熱工程と、
を備えることを特徴とする熱処理方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016225101A JP6810578B2 (ja) | 2016-11-18 | 2016-11-18 | ドーパント導入方法および熱処理方法 |
TW106136479A TWI677908B (zh) | 2016-11-18 | 2017-10-24 | 摻雜物導入方法及熱處裡方法 |
KR1020170152246A KR102033829B1 (ko) | 2016-11-18 | 2017-11-15 | 도펀트 도입 방법 및 열처리 방법 |
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