JP2018080072A - SiC単結晶複合体及びSiCインゴット - Google Patents
SiC単結晶複合体及びSiCインゴット Download PDFInfo
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- JP2018080072A JP2018080072A JP2016222273A JP2016222273A JP2018080072A JP 2018080072 A JP2018080072 A JP 2018080072A JP 2016222273 A JP2016222273 A JP 2016222273A JP 2016222273 A JP2016222273 A JP 2016222273A JP 2018080072 A JP2018080072 A JP 2018080072A
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- crystal
- single crystal
- sic
- outer peripheral
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- 239000013078 crystal Substances 0.000 title claims abstract description 275
- 239000002131 composite material Substances 0.000 title claims abstract description 47
- 230000002093 peripheral effect Effects 0.000 claims description 71
- 229910010271 silicon carbide Inorganic materials 0.000 description 127
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 123
- 230000007547 defect Effects 0.000 description 25
- 235000012431 wafers Nutrition 0.000 description 18
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000009434 installation Methods 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 238000002050 diffraction method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000005092 sublimation method Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
- C01B32/914—Carbides of single elements
- C01B32/956—Silicon carbide
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
- C30B23/025—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
すなわち、本発明は、上記課題を解決するために、以下の手段を提供する。
まずSiC単結晶複合体10の製造方法について説明する。
Claims (7)
- 平面視中央に位置する中央部と、
前記中央部の外周を囲繞する外周部と、を備え、
前記中央部と前記外周部とは、結晶面が傾いている又は異なっており、
前記中央部と前記外周部との間には境界があり、前記境界を介して前記中央部を構成する結晶の方向と、前記外周部を構成する結晶の方向とが異なっている、SiC単結晶複合体。 - 前記中央部の結晶成長面が、{0001}面に対し2°以上20°以下のオフセット角を有する請求項1に記載のSiC単結晶複合体。
- 結晶成長する際のオフセット方向と平行で中心を通る直線と、前記境界との交点において、
前記中央部と前記外周部の結晶面が互いに、前記中央部と前記外周部との境界面に対し垂直な方向を軸に2°以上傾いている請求項1又は2のいずれかに記載のSiC単結晶複合体。 - 前記中央部の結晶面が(000−1)C面であり、前記外周部の結晶面が(0001)Si面である請求項1又は2のいずれかに記載のSiC単結晶複合体。
- 前記境界が、外周端から直径の5%以上内側に設けられている請求項1〜4のいずれか一項に記載のSiC単結晶複合体。
- 平面視中央に位置する第1単結晶と、
前記第1単結晶の外周を囲繞する第2単結晶と、
前記第1単結晶と前記第2単結晶を接続する接合部と、を有し、
前記第1単結晶を構成する結晶の方向と、前記第2単結晶を構成する結晶の方向とが、前記接合部を境に異なっている、SiCインゴット。 - 前記第1単結晶と前記第2単結晶のポリタイプが異なる請求項6に記載のSiCインゴット。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016222273A JP6839525B2 (ja) | 2016-11-15 | 2016-11-15 | SiC単結晶複合体及びSiCインゴット |
CN201780068972.6A CN109952393B (zh) | 2016-11-15 | 2017-11-14 | SiC单晶复合体和SiC锭 |
DE112017005752.3T DE112017005752B4 (de) | 2016-11-15 | 2017-11-14 | SiC-Einkristallverbund und SiC-Block |
US16/349,418 US11618969B2 (en) | 2016-11-15 | 2017-11-14 | SiC single crystal composite and SiC ingot |
PCT/JP2017/040896 WO2018092756A1 (ja) | 2016-11-15 | 2017-11-14 | SiC単結晶複合体及びSiCインゴット |
Applications Claiming Priority (1)
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JP2016222273A JP6839525B2 (ja) | 2016-11-15 | 2016-11-15 | SiC単結晶複合体及びSiCインゴット |
Publications (2)
Publication Number | Publication Date |
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JP2018080072A true JP2018080072A (ja) | 2018-05-24 |
JP6839525B2 JP6839525B2 (ja) | 2021-03-10 |
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JP2016222273A Active JP6839525B2 (ja) | 2016-11-15 | 2016-11-15 | SiC単結晶複合体及びSiCインゴット |
Country Status (5)
Country | Link |
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US (1) | US11618969B2 (ja) |
JP (1) | JP6839525B2 (ja) |
CN (1) | CN109952393B (ja) |
DE (1) | DE112017005752B4 (ja) |
WO (1) | WO2018092756A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7305818B1 (ja) | 2022-01-26 | 2023-07-10 | 國家中山科學研究院 | 炭化ケイ素単結晶成長の熱場調整方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023222787A1 (en) * | 2022-05-18 | 2023-11-23 | Zadient Technologies SAS | METHOD FOR PRODUCING AT LEAST ONE CRACK-FREE SiC PIECE |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11268989A (ja) * | 1998-03-19 | 1999-10-05 | Denso Corp | 単結晶の製造方法 |
JP2001294499A (ja) * | 2000-04-06 | 2001-10-23 | Nippon Steel Corp | モザイク性の小さな炭化珪素単結晶ウエハ |
JP2013237592A (ja) * | 2012-05-16 | 2013-11-28 | Sumitomo Electric Ind Ltd | 炭化珪素単結晶の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2001250835A1 (en) | 2000-03-13 | 2001-09-24 | Ii-Vi Incorporated | Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals |
JP3961750B2 (ja) | 2000-08-21 | 2007-08-22 | 独立行政法人産業技術総合研究所 | 単結晶の成長装置および成長方法 |
JP5699963B2 (ja) | 2012-02-16 | 2015-04-15 | 三菱電機株式会社 | 単結晶の製造方法および製造装置 |
JP6116866B2 (ja) * | 2012-11-19 | 2017-04-19 | 株式会社豊田中央研究所 | SiC単結晶成長用種結晶、及びSiC単結晶の製造方法 |
JP6448471B2 (ja) | 2015-05-29 | 2019-01-09 | 紀伊産業株式会社 | 二重容器 |
JP6635585B2 (ja) * | 2015-12-03 | 2020-01-29 | 昭和電工株式会社 | SiC単結晶の製造方法、SiC単結晶及びSiCインゴット |
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2016
- 2016-11-15 JP JP2016222273A patent/JP6839525B2/ja active Active
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2017
- 2017-11-14 CN CN201780068972.6A patent/CN109952393B/zh active Active
- 2017-11-14 WO PCT/JP2017/040896 patent/WO2018092756A1/ja active Application Filing
- 2017-11-14 DE DE112017005752.3T patent/DE112017005752B4/de active Active
- 2017-11-14 US US16/349,418 patent/US11618969B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11268989A (ja) * | 1998-03-19 | 1999-10-05 | Denso Corp | 単結晶の製造方法 |
JP2001294499A (ja) * | 2000-04-06 | 2001-10-23 | Nippon Steel Corp | モザイク性の小さな炭化珪素単結晶ウエハ |
JP2013237592A (ja) * | 2012-05-16 | 2013-11-28 | Sumitomo Electric Ind Ltd | 炭化珪素単結晶の製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7305818B1 (ja) | 2022-01-26 | 2023-07-10 | 國家中山科學研究院 | 炭化ケイ素単結晶成長の熱場調整方法 |
Also Published As
Publication number | Publication date |
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WO2018092756A1 (ja) | 2018-05-24 |
JP6839525B2 (ja) | 2021-03-10 |
DE112017005752B4 (de) | 2022-06-30 |
DE112017005752T5 (de) | 2019-08-14 |
US11618969B2 (en) | 2023-04-04 |
US20190360118A1 (en) | 2019-11-28 |
CN109952393B (zh) | 2021-02-05 |
CN109952393A (zh) | 2019-06-28 |
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