JP2018072813A - 有機発光表示装置 - Google Patents
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- 239000010410 layer Substances 0.000 claims description 95
- 239000003990 capacitor Substances 0.000 claims description 18
- 239000010408 film Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 8
- 239000011229 interlayer Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 239000004020 conductor Substances 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000009467 reduction Effects 0.000 description 7
- 239000012044 organic layer Substances 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- -1 (Nd) Chemical class 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
Abstract
【解決手段】本発明による有機発光表示装置は、複数の画素と前記画素を駆動するための複数の配線とを含み、各画素は導体化した第1領域及び第2領域を有するアクティブ層とゲート電極とを含む薄膜トランジスタを含む。この際、薄膜トランジスタの第1領域又は第2領域の少なくとも一つは前記配線と直接接続される。
【選択図】 図1
Description
110 ゲート絶縁膜
120 層間絶縁膜
130 平坦化膜
140 バンク層
200 半導体層
210 駆動トランジスタ
211、235 ゲート電極
212 第1電極部
213、238 第1領域
214 第1延長部
217 連結電極
218、232 第2領域
220 スイッチングトランジスタ
230 センシングトランジスタ
237 下部電極
251 シールド層
252 中間電極
253 上部電極
261 バッファー層
301 第1電極
302 有機層
303 第2電極
701〜706 コンタクトホール
Claims (12)
- マトリックス状に配置される複数の画素と、前記複数の画素の各々を駆動するための信号を供給する複数の配線とを含み、
前記複数の画素の各々は、導体化した第1領域及び第2領域を有するアクティブ層とゲート電極とを含む薄膜トランジスタを含み、
前記第1領域及び前記第2領域の少なくとも一つは前記複数の配線のいずれか一つと直接接続される、有機発光表示装置。 - 前記第1領域及び前記第2領域のうち前記配線と直接連結された領域は、前記薄膜トランジスタのチャネル領域と一体に構成された電極部と、前記電極部から伸びて前記配線と直接接続された延長部とを含む、請求項1に記載の有機発光表示装置。
- 前記各画素はキャパシタをさらに含み、
前記キャパシタは、
基板上に位置するシールド層と、
前記シールド層とバッファー層を挟んで重畳し、第1コンタクトホールを介して前記シールド層と接続され、導体化したアクティブ層からなる下部電極と、
前記アクティブ層とゲート絶縁膜及び層間絶縁膜を挟んで重畳する中間電極と、
前記中間電極とパッシベーション膜を挟んで重畳する上部電極と、
を含む、請求項1に記載の有機発光表示装置。 - 前記薄膜トランジスタのいずれか一つは、前記第1領域に第2コンタクトホールを介して接する連結電極をさらに含み、前記連結電極は前記画素電極と第3コンタクトホールを介して接続され、前記第2領域は前記配線のうち前記画素に駆動電源を供給するとともに垂直方向に配列された電源配線と第4コンタクトホールを介して直接接続された駆動トランジスタである、請求項1に記載の有機発光表示装置。
- 前記駆動トランジスタの前記第2領域は、前記駆動トランジスタのチャネル領域と一体に構成された第1電極部と、前記第1電極部から伸びて前記電源配線に接続される第1延長部とを含む、請求項4に記載の有機発光表示装置。
- 前記第1電極部は前記チャネル領域から伸びて、隣接した他の画素の前記駆動トランジスタの第1電極部と接続され、前記第1延長部は前記隣接した二つの画素の第1電極部が接続された地点から伸びて前記電源配線に直接接続される、請求項5に記載の有機発光表示装置。
- 前記薄膜トランジスタのいずれか一つはセンシングトランジスタであり、
前記センシングトランジスタの第1領域は、前記画素に基準電圧を供給し、前記配線のうち前記画素に充電された電圧をセンシングするレファレンスラインと第5コンタクトホールを介して直接接続され、
前記センシングトランジスタの第2領域は前記駆動トランジスタの第1領域から伸びて一体に構成される、請求項1に記載の有機発光表示装置。 - 前記センシングトランジスタの第1領域は、前記センシングトランジスタのチャネル領域に接して一体に構成された第2電極部と、前記第2電極部から伸びて、垂直方向に配列された前記レファレンスラインと前記第5コンタクトホールを介して接続される第2延長部とを含む、請求項7に記載の有機発光表示装置。
- 前記第2電極部は、隣接した画素に備えられたセンシングトランジスタの第2電極部と接し、
前記第2延長部は前記隣接した二つのセンシングトランジスタの第2電極部が接する地点から伸びて、前記レファレンスラインと前記第5コンタクトホールを介して直接接続される、請求項8に記載の有機発光表示装置。 - 前記シールド層は、前記配線のうち各画素に駆動電源を供給するための電源配線及び前記複数の画素の各々に基準電圧を供給し各画素に充電された電圧をセンシングするレファレンス配線と同一の層に、同じ物質で形成される、請求項3に記載の有機発光表示装置。
- 前記センシングトランジスタのゲート電極は、前記配線のうち各画素にゲート信号を供給するゲートラインに接続されている、請求項7に記載の有機発光表示装置。
- 前記シールド層、前記レファレンスライン、及び前記電源配線のエッジ部分はテーパー形状を有する、請求項10に記載の有機発光表示装置。
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Application Number | Priority Date | Filing Date | Title |
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KR10-2016-0143719 | 2016-10-31 | ||
KR1020160143719A KR20180047540A (ko) | 2016-10-31 | 2016-10-31 | 유기 발광 표시 장치 |
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JP2018072813A true JP2018072813A (ja) | 2018-05-10 |
JP6458103B2 JP6458103B2 (ja) | 2019-01-23 |
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JP2017171898A Active JP6458103B2 (ja) | 2016-10-31 | 2017-09-07 | 有機発光表示装置 |
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US (1) | US10468477B2 (ja) |
EP (1) | EP3316309B1 (ja) |
JP (1) | JP6458103B2 (ja) |
KR (1) | KR20180047540A (ja) |
CN (1) | CN108022946B (ja) |
TW (1) | TWI636447B (ja) |
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JP2021110932A (ja) * | 2019-12-30 | 2021-08-02 | エルジー ディスプレイ カンパニー リミテッド | 表示パネルとそのリペア方法 |
US11557642B2 (en) | 2019-12-30 | 2023-01-17 | Lg Display Co., Ltd. | Display panel and repair method thereof |
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US11557642B2 (en) | 2019-12-30 | 2023-01-17 | Lg Display Co., Ltd. | Display panel and repair method thereof |
US11925084B2 (en) | 2019-12-30 | 2024-03-05 | Lg Display Co., Ltd. | Display panel and repair method thereof |
US11925067B2 (en) | 2020-05-11 | 2024-03-05 | Boe Technology Group Co., Ltd. | Display panel and display device |
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Also Published As
Publication number | Publication date |
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CN108022946A (zh) | 2018-05-11 |
US20180122888A1 (en) | 2018-05-03 |
EP3316309B1 (en) | 2022-01-26 |
CN108022946B (zh) | 2021-10-26 |
TW201818393A (zh) | 2018-05-16 |
US10468477B2 (en) | 2019-11-05 |
EP3316309A1 (en) | 2018-05-02 |
JP6458103B2 (ja) | 2019-01-23 |
TWI636447B (zh) | 2018-09-21 |
KR20180047540A (ko) | 2018-05-10 |
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