JP2018064094A - 回収装置を有する熱処理システム - Google Patents
回収装置を有する熱処理システム Download PDFInfo
- Publication number
- JP2018064094A JP2018064094A JP2017193750A JP2017193750A JP2018064094A JP 2018064094 A JP2018064094 A JP 2018064094A JP 2017193750 A JP2017193750 A JP 2017193750A JP 2017193750 A JP2017193750 A JP 2017193750A JP 2018064094 A JP2018064094 A JP 2018064094A
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- Prior art keywords
- chamber
- compartment
- heat treatment
- treatment system
- recovery device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D5/00—Supports, screens, or the like for the charge within the furnace
- F27D5/0037—Supports specially adapted for semi-conductors
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D7/00—Forming, maintaining, or circulating atmospheres in heating chambers
- F27D7/06—Forming or maintaining special atmospheres or vacuum within heating chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
- H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
- H01L21/67781—Batch transfer of wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
Abstract
Description
・チャンバの遠位部の方を向いた取り込み開口を有し、
・排気通路と連通する隔室であって回収装置の内表面において揮発性種の凝集物の形成が促進されるように、ガスおよび揮発性種が取り込み開口を介して隔室に入り隔室を通過して排気通路に至るように構成された隔室を規定する、回収装置、を備えることを特徴とする熱処理システムに関する。
・回収装置は、環状断面を有する中空シリンダーの全体形状を有し、上記の環状断面は、隔室の断面を形成する;
・回収装置は、環状断面を有する中空シリンダーの全体形状を有し、上記の環状断面は、隔室の断面を形成する;
・隔室の断面は、1mmから10mmの、好ましくは5mmの幅を有する;
・取り込み開口は、温度が揮発性種の臨界凝縮温度よりも高いチャンバ内の位置に存する;
・隔室は、チャンバの内壁に設けられた第1のシリンダー状壁と、少なくとも1つのパージ孔を有する第2のシリンダー状壁と、を備える;
・回収装置は、排気通路に挿入可能なチップであって、該チップの一端が隔室と連通しているチップを備える;
・回収装置は、取り外し可能である;
・回収装置は、水晶、シリコンカーバイド、シリコン、窒化アルミニウムおよびアルミナから選択される材料から形成されている。
Claims (9)
- 複数の基板(10)を収容可能なチャンバ(2)と、基板(10)が前記チャンバに入る領域の反対に存する前記チャンバ(2)の遠位部にあるガス吸気通路(5)と、熱処理中に生成されるガスおよび/または揮発性種用の排気通路(6)であって前記基板(10)が前記チャンバに入る前記領域の近くに存する前記チャンバ(2)の近位部にある排気通路(6)と、を備える熱処理システム(100)であって;前記熱処理システム(100)は、前記チャンバ(2)の前記近位部において、回収装置(200)であって:
・前記チャンバ(2)の前記遠位部の方を向いた取り込み開口(202)を有し、
・前記排気通路(6)と連通する隔室(201)であってガスおよび揮発性種が前記取り込み開口(202)を介して前記隔室(201)に入り前記隔室を通過して前記排気通路(6)に至るように構成された隔室(201)を規定する、回収装置(200)、を備えることを特徴とする熱処理システム(100)。 - 前記回収装置(200)は、環状断面を有する中空シリンダー部の全体形状を有し、前記環状断面は、前記隔室(201)の断面を形成する、先行する請求項に記載の熱処理システム(100)。
- 前記回収装置(200)は、環状断面を有する中空シリンダーの全体形状を有し、前記環状断面は、前記隔室(201)の断面を形成する、請求項1に記載の熱処理システム(100)。
- 前記隔室(201)の前記断面は、1mmから10mmの幅を有する、2つの先行する請求項のうちの1つに記載の熱処理システム(100)。
- 前記取り込み開口(202)は、温度が揮発性種の臨界凝縮温度よりも高い前記チャンバ(2)内の位置に存する、先行する請求項のいずれか一項に記載の熱処理システム(100)。
- 前記隔室(201)は、前記チャンバ(2)の内壁に設けられた第1のシリンダー状壁と、少なくとも1つのパージ孔(204)を有する第2のシリンダー状壁と、を備える、先行する請求項のいずれか一項に記載の熱処理システム(100)。
- 前記回収装置(200)は、前記排気通路(6)に挿入可能なチップ(203)であって、該チップ(203)の一端が前記隔室(201)と連通しているチップ(203)を備える、先行する請求項のいずれか一項に記載の熱処理システム(100)。
- 前記回収装置(200)は、取り外し可能である、先行する請求項のいずれか一項に記載の熱処理システム(100)。
- 前記回収装置(200)は、水晶、シリコンカーバイド、シリコン、窒化アルミニウムおよびアルミナから選択される材料から形成されている、先行する請求項のいずれか一項に記載の熱処理システム(100)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1659810A FR3057391B1 (fr) | 2016-10-11 | 2016-10-11 | Equipement de traitement thermique avec dispositif collecteur |
FR1659810 | 2016-10-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018064094A true JP2018064094A (ja) | 2018-04-19 |
JP7034656B2 JP7034656B2 (ja) | 2022-03-14 |
Family
ID=57861004
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017193750A Active JP7034656B2 (ja) | 2016-10-11 | 2017-10-03 | 回収装置を有する熱処理システム |
Country Status (7)
Country | Link |
---|---|
US (1) | US10510565B2 (ja) |
JP (1) | JP7034656B2 (ja) |
KR (1) | KR102399773B1 (ja) |
CN (1) | CN107919302B (ja) |
FR (1) | FR3057391B1 (ja) |
SG (1) | SG10201708389SA (ja) |
TW (1) | TWI736684B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101393235B1 (ko) * | 2012-11-13 | 2014-05-27 | 공주대학교 산학협력단 | 고장 감내형 pwm 스위칭에 의한 전력변환장치 및 그 제어방법 |
KR102188604B1 (ko) * | 2019-04-02 | 2020-12-09 | 주식회사 미래보 | 반도체 공정의 반응부산물 포집장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10223538A (ja) * | 1997-02-07 | 1998-08-21 | Tokyo Electron Ltd | 縦型熱処理装置 |
JP2011129567A (ja) * | 2009-12-15 | 2011-06-30 | Hitachi Kokusai Electric Inc | 熱処理装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
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US5188672A (en) | 1990-06-28 | 1993-02-23 | Applied Materials, Inc. | Reduction of particulate contaminants in chemical-vapor-deposition apparatus |
US5312245A (en) * | 1993-07-16 | 1994-05-17 | International Business Machines Corporation | Particulate trap for vertical furnace |
US5827370A (en) * | 1997-01-13 | 1998-10-27 | Mks Instruments, Inc. | Method and apparatus for reducing build-up of material on inner surface of tube downstream from a reaction furnace |
US6900413B2 (en) * | 1998-08-12 | 2005-05-31 | Aviza Technology, Inc. | Hot wall rapid thermal processor |
US6814813B2 (en) * | 2002-04-24 | 2004-11-09 | Micron Technology, Inc. | Chemical vapor deposition apparatus |
FR2842193B1 (fr) * | 2002-07-12 | 2004-10-01 | Messier Bugatti | Procede et installation pour le traitement thermique a haute temperature et la densification par infiltration chimique en phase vapeur de textures en carbone |
EP1540258A1 (en) * | 2002-07-15 | 2005-06-15 | Aviza Technology, Inc. | Variable heater element for low to high temperature ranges |
JP4734950B2 (ja) * | 2005-02-17 | 2011-07-27 | 株式会社デンソー | 熱処理装置 |
US7312422B2 (en) * | 2006-03-17 | 2007-12-25 | Momentive Performance Materials Inc. | Semiconductor batch heating assembly |
US7632354B2 (en) * | 2006-08-08 | 2009-12-15 | Tokyo Electron Limited | Thermal processing system with improved process gas flow and method for injecting a process gas into a thermal processing system |
JP2008053515A (ja) | 2006-08-25 | 2008-03-06 | Seiko Instruments Inc | 半導体装置およびその製造方法 |
DE202010015018U1 (de) * | 2010-11-07 | 2011-04-14 | Bohnet, Hans | Anordnung zur Herstellung von strukturierten Substraten |
JP5779957B2 (ja) * | 2011-04-20 | 2015-09-16 | 東京エレクトロン株式会社 | ローディングユニット及び処理システム |
-
2016
- 2016-10-11 FR FR1659810A patent/FR3057391B1/fr active Active
-
2017
- 2017-10-02 TW TW106134093A patent/TWI736684B/zh active
- 2017-10-03 JP JP2017193750A patent/JP7034656B2/ja active Active
- 2017-10-10 US US15/728,953 patent/US10510565B2/en active Active
- 2017-10-11 KR KR1020170131077A patent/KR102399773B1/ko active IP Right Grant
- 2017-10-11 CN CN201710939859.2A patent/CN107919302B/zh active Active
- 2017-10-11 SG SG10201708389SA patent/SG10201708389SA/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10223538A (ja) * | 1997-02-07 | 1998-08-21 | Tokyo Electron Ltd | 縦型熱処理装置 |
JP2011129567A (ja) * | 2009-12-15 | 2011-06-30 | Hitachi Kokusai Electric Inc | 熱処理装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI736684B (zh) | 2021-08-21 |
KR102399773B1 (ko) | 2022-05-20 |
SG10201708389SA (en) | 2018-05-30 |
CN107919302A (zh) | 2018-04-17 |
TW201816956A (zh) | 2018-05-01 |
KR20180040112A (ko) | 2018-04-19 |
US20180102264A1 (en) | 2018-04-12 |
FR3057391B1 (fr) | 2019-03-29 |
FR3057391A1 (fr) | 2018-04-13 |
US10510565B2 (en) | 2019-12-17 |
CN107919302B (zh) | 2023-05-02 |
JP7034656B2 (ja) | 2022-03-14 |
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