JP2018041751A - プラズマ処理装置およびプラズマ処理方法 - Google Patents
プラズマ処理装置およびプラズマ処理方法 Download PDFInfo
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- 238000003672 processing method Methods 0.000 title claims description 11
- 238000005530 etching Methods 0.000 claims abstract description 336
- 238000001020 plasma etching Methods 0.000 claims abstract description 19
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- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 10
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 4
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- 239000001301 oxygen Substances 0.000 description 2
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Abstract
Description
T2=T1×(Dt−D1)/(D2−D1) (式1)
以上で2回目のエッチングサイクルは終了し、3回目のエッチングサイクル処理が開始される。以下に、図3のフローチャートおよび図4(c)を用いて3回目のエッチングサイクルの処理の流れを説明する。
2…処理室
3…マスフローコントローラ
4…プラズマ生成用高周波電源
5…排気装置
6…ウェハ
7…試料台
8…プラズマ
9…バイアス用高周波電源
10…圧力計
11…可変コンダクタンスバルブ
12…観察窓
13…受光器
14…演算部
15…制御部
16…磁場形成手段
21…発光強度面積演算部
22…発光強度面積積算部
23…発光強度面積保持部
24…エッチング深さ推定値演算部
25…エッチング深さ推定値保持部
26…サイクル継続判定部
27…次サイクルのエッチング深さ予測値演算部
28…次サイクルのエッチング時間演算部
29…発光強度面積―エッチング深さデータベース
30…エッチング深さ目標値データベース
Claims (6)
- プラズマを用いて被エッチング膜がエッチングされる処理室と、前記プラズマを生成するための高周波電力を供給する高周波電源と、前記プラズマの発光をモニタするモニタ部とを備えるプラズマ処理装置において、
前記被エッチング膜のプラズマエッチングにより堆積した堆積膜をプラズマにより除去する時に取得された発光強度と、前記被エッチング膜のエッチング量と前記発光強度との相関関係と、に基づいて前記プラズマエッチング時のエッチング量が推定される演算部とをさらに備えることを特徴とするプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記推定されたエッチング量に基づいてエッチングステップの繰り返しにより行われる前記プラズマエッチングを終了させる制御部をさらに備えることを特徴とするプラズマ処理装置。 - 請求項1または請求項2に記載のプラズマ処理装置において、
前記被エッチング膜は、シリコン酸化膜であり、
前記発光強度は、一酸化炭素の発光強度をアルゴンの発光強度により除したものであり、
前記堆積膜は、フルオロカーボンガスを用いたプラズマにより堆積することを特徴とするプラズマ処理装置。 - プラズマを用いて被エッチング膜をエッチングするプラズマ処理方法において、
前記被エッチング膜のプラズマエッチングにより堆積した堆積膜をプラズマにより除去する時に発光強度をモニタし、
前記モニタされた発光強度と、前記被エッチング膜のエッチング量と前記発光強度との相関関係と、に基づいて前記プラズマエッチング時のエッチング量を推定することを特徴とするプラズマ処理方法。 - 請求項4に記載のプラズマ処理方法において、
前記推定されたエッチング量に基づいてエッチングステップの繰り返しにより行われる前記プラズマエッチングを終了させることを特徴とするプラズマ処理方法。 - 請求項4または請求項5に記載のプラズマ処理方法において、
前記被エッチング膜は、シリコン酸化膜であり、
前記発光強度は、一酸化炭素の発光強度をアルゴンの発光強度により除したものであり、
前記堆積膜は、フルオロカーボンガスを用いたプラズマにより堆積することを特徴とするプラズマ処理方法。
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JP2016172381A JP6557642B2 (ja) | 2016-09-05 | 2016-09-05 | プラズマ処理装置およびプラズマ処理方法 |
KR1020170000136A KR101995811B1 (ko) | 2016-09-05 | 2017-01-02 | 플라스마 처리 장치 및 플라스마 처리 방법 |
TW106102959A TWI678734B (zh) | 2016-09-05 | 2017-01-25 | 電漿處理裝置及電漿處理方法 |
US15/437,026 US10153217B2 (en) | 2016-09-05 | 2017-02-20 | Plasma processing apparatus and plasma processing method |
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JP2018113306A (ja) * | 2017-01-10 | 2018-07-19 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
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US11387110B2 (en) * | 2019-06-20 | 2022-07-12 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
WO2021255812A1 (ja) * | 2020-06-16 | 2021-12-23 | 株式会社日立ハイテク | プラズマ処理装置およびプラズマ処理方法 |
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