JP2018002544A5 - - Google Patents

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Publication number
JP2018002544A5
JP2018002544A5 JP2016131157A JP2016131157A JP2018002544A5 JP 2018002544 A5 JP2018002544 A5 JP 2018002544A5 JP 2016131157 A JP2016131157 A JP 2016131157A JP 2016131157 A JP2016131157 A JP 2016131157A JP 2018002544 A5 JP2018002544 A5 JP 2018002544A5
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JP
Japan
Prior art keywords
layer
crystalline oxide
main component
oxide semiconductor
semiconductor film
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JP2016131157A
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English (en)
Japanese (ja)
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JP2018002544A (ja
JP6904517B2 (ja
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Priority to JP2016131157A priority Critical patent/JP6904517B2/ja
Priority claimed from JP2016131157A external-priority patent/JP6904517B2/ja
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Publication of JP2018002544A5 publication Critical patent/JP2018002544A5/ja
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JP2016131157A 2016-06-30 2016-06-30 結晶性酸化物半導体膜およびその製造方法 Active JP6904517B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016131157A JP6904517B2 (ja) 2016-06-30 2016-06-30 結晶性酸化物半導体膜およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016131157A JP6904517B2 (ja) 2016-06-30 2016-06-30 結晶性酸化物半導体膜およびその製造方法

Publications (3)

Publication Number Publication Date
JP2018002544A JP2018002544A (ja) 2018-01-11
JP2018002544A5 true JP2018002544A5 (ru) 2019-08-08
JP6904517B2 JP6904517B2 (ja) 2021-07-14

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ID=60944831

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JP2016131157A Active JP6904517B2 (ja) 2016-06-30 2016-06-30 結晶性酸化物半導体膜およびその製造方法

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JP (1) JP6904517B2 (ru)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI770407B (zh) * 2018-08-01 2022-07-11 日本商出光興產股份有限公司 化合物
US20220223737A1 (en) * 2019-05-23 2022-07-14 Flosfia Inc. Semiconductor device
JP7301966B2 (ja) * 2019-06-25 2023-07-03 日本碍子株式会社 半導体膜
TW202110743A (zh) * 2019-07-12 2021-03-16 日商Flosfia股份有限公司 氧化物膜及半導體裝置
WO2021010237A1 (ja) * 2019-07-12 2021-01-21 株式会社Flosfia 酸化物半導体膜及び半導体装置
JPWO2021066156A1 (ru) * 2019-10-04 2021-04-08
JP2023085571A (ja) * 2020-03-17 2023-06-21 日本碍子株式会社 半導体膜
KR20230048008A (ko) 2020-08-06 2023-04-10 신에쓰 가가꾸 고교 가부시끼가이샤 반도체 적층체, 반도체 소자 및 반도체 소자의 제조방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5343224B1 (ja) * 2012-09-28 2013-11-13 Roca株式会社 半導体装置および結晶
JP6013410B2 (ja) * 2014-08-07 2016-10-25 株式会社タムラ製作所 Ga2O3系単結晶基板
JP2016100593A (ja) * 2014-11-26 2016-05-30 株式会社Flosfia 結晶性積層構造体

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