JP2018002544A5 - - Google Patents
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- Publication number
- JP2018002544A5 JP2018002544A5 JP2016131157A JP2016131157A JP2018002544A5 JP 2018002544 A5 JP2018002544 A5 JP 2018002544A5 JP 2016131157 A JP2016131157 A JP 2016131157A JP 2016131157 A JP2016131157 A JP 2016131157A JP 2018002544 A5 JP2018002544 A5 JP 2018002544A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- crystalline oxide
- main component
- oxide semiconductor
- semiconductor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 23
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 10
- 229910052733 gallium Inorganic materials 0.000 claims 10
- 229910052782 aluminium Inorganic materials 0.000 claims 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminum Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 9
- 229910052593 corundum Inorganic materials 0.000 claims 6
- 239000010431 corundum Substances 0.000 claims 6
- 238000004519 manufacturing process Methods 0.000 claims 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N oxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 4
- 229910052760 oxygen Inorganic materials 0.000 claims 4
- 239000001301 oxygen Substances 0.000 claims 4
- 239000000758 substrate Substances 0.000 claims 4
- 239000000203 mixture Substances 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 239000003595 mist Substances 0.000 claims 1
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016131157A JP6904517B2 (ja) | 2016-06-30 | 2016-06-30 | 結晶性酸化物半導体膜およびその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016131157A JP6904517B2 (ja) | 2016-06-30 | 2016-06-30 | 結晶性酸化物半導体膜およびその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2018002544A JP2018002544A (ja) | 2018-01-11 |
JP2018002544A5 true JP2018002544A5 (ru) | 2019-08-08 |
JP6904517B2 JP6904517B2 (ja) | 2021-07-14 |
Family
ID=60944831
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016131157A Active JP6904517B2 (ja) | 2016-06-30 | 2016-06-30 | 結晶性酸化物半導体膜およびその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6904517B2 (ru) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI770407B (zh) * | 2018-08-01 | 2022-07-11 | 日本商出光興產股份有限公司 | 化合物 |
US20220223737A1 (en) * | 2019-05-23 | 2022-07-14 | Flosfia Inc. | Semiconductor device |
JP7301966B2 (ja) * | 2019-06-25 | 2023-07-03 | 日本碍子株式会社 | 半導体膜 |
TW202110743A (zh) * | 2019-07-12 | 2021-03-16 | 日商Flosfia股份有限公司 | 氧化物膜及半導體裝置 |
WO2021010237A1 (ja) * | 2019-07-12 | 2021-01-21 | 株式会社Flosfia | 酸化物半導体膜及び半導体装置 |
JPWO2021066156A1 (ru) * | 2019-10-04 | 2021-04-08 | ||
JP2023085571A (ja) * | 2020-03-17 | 2023-06-21 | 日本碍子株式会社 | 半導体膜 |
KR20230048008A (ko) | 2020-08-06 | 2023-04-10 | 신에쓰 가가꾸 고교 가부시끼가이샤 | 반도체 적층체, 반도체 소자 및 반도체 소자의 제조방법 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5343224B1 (ja) * | 2012-09-28 | 2013-11-13 | Roca株式会社 | 半導体装置および結晶 |
JP6013410B2 (ja) * | 2014-08-07 | 2016-10-25 | 株式会社タムラ製作所 | Ga2O3系単結晶基板 |
JP2016100593A (ja) * | 2014-11-26 | 2016-05-30 | 株式会社Flosfia | 結晶性積層構造体 |
-
2016
- 2016-06-30 JP JP2016131157A patent/JP6904517B2/ja active Active
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