JP2017535960A5 - - Google Patents
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- Publication number
- JP2017535960A5 JP2017535960A5 JP2017525537A JP2017525537A JP2017535960A5 JP 2017535960 A5 JP2017535960 A5 JP 2017535960A5 JP 2017525537 A JP2017525537 A JP 2017525537A JP 2017525537 A JP2017525537 A JP 2017525537A JP 2017535960 A5 JP2017535960 A5 JP 2017535960A5
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- chip
- semiconductor
- central area
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 41
- 238000000034 method Methods 0.000 claims 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 11
- 229910052751 metal Inorganic materials 0.000 claims 11
- 239000002184 metal Substances 0.000 claims 11
- 229910052710 silicon Inorganic materials 0.000 claims 10
- 239000010703 silicon Substances 0.000 claims 10
- 238000009432 framing Methods 0.000 claims 5
- 230000002093 peripheral effect Effects 0.000 claims 5
- 239000013078 crystal Substances 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 4
- 230000005669 field effect Effects 0.000 claims 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 3
- 238000002161 passivation Methods 0.000 claims 3
- 238000000059 patterning Methods 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 1
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 238000004806 packaging method and process Methods 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US14/537,943 | 2014-11-11 | ||
| US14/537,943 US9305852B1 (en) | 2014-11-11 | 2014-11-11 | Silicon package for embedded electronic system having stacked semiconductor chips |
| PCT/US2015/060208 WO2016077488A1 (en) | 2014-11-11 | 2015-11-11 | Package for electronic system having semiconductor chips |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017535960A JP2017535960A (ja) | 2017-11-30 |
| JP2017535960A5 true JP2017535960A5 (enExample) | 2018-12-20 |
| JP6709785B2 JP6709785B2 (ja) | 2020-06-17 |
Family
ID=55589080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017525537A Active JP6709785B2 (ja) | 2014-11-11 | 2015-11-11 | 半導体チップを有する電子システムのためのパッケージ |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9305852B1 (enExample) |
| EP (1) | EP3218930B1 (enExample) |
| JP (1) | JP6709785B2 (enExample) |
| CN (1) | CN107078124B (enExample) |
| WO (1) | WO2016077488A1 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9893058B2 (en) * | 2015-09-17 | 2018-02-13 | Semiconductor Components Industries, Llc | Method of manufacturing a semiconductor device having reduced on-state resistance and structure |
| EP3279935B1 (en) * | 2016-08-02 | 2019-01-02 | ABB Schweiz AG | Power semiconductor module |
| US20200235067A1 (en) * | 2019-01-22 | 2020-07-23 | Texas Instruments Incorporated | Electronic device flip chip package with exposed clip |
| US11031321B2 (en) * | 2019-03-15 | 2021-06-08 | Infineon Technologies Ag | Semiconductor device having a die pad with a dam-like configuration |
| US11024564B2 (en) | 2019-06-19 | 2021-06-01 | Texas Instruments Incorporated | Packaged electronic device with film isolated power stack |
| EP3944304A1 (en) * | 2020-07-20 | 2022-01-26 | Nexperia B.V. | A semiconductor device and a method of manufacture |
| CN114899171B (zh) * | 2022-04-29 | 2025-10-03 | 佛山市国星光电股份有限公司 | 一种无焊线功率器件 |
| CN115188853A (zh) * | 2022-08-15 | 2022-10-14 | 西安西热产品认证检测有限公司 | 一种低温双面光伏组件 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4568958A (en) * | 1984-01-03 | 1986-02-04 | General Electric Company | Inversion-mode insulated-gate gallium arsenide field-effect transistors |
| JP4052078B2 (ja) * | 2002-10-04 | 2008-02-27 | 富士通株式会社 | 半導体装置 |
| EP1501126A1 (en) * | 2003-11-05 | 2005-01-26 | Infineon Technologies AG | Semiconductor chip having a cavity for stacked die application |
| US7279786B2 (en) * | 2005-02-04 | 2007-10-09 | Stats Chippac Ltd. | Nested integrated circuit package on package system |
| US9147649B2 (en) * | 2008-01-24 | 2015-09-29 | Infineon Technologies Ag | Multi-chip module |
| US8358014B2 (en) * | 2009-05-28 | 2013-01-22 | Texas Instruments Incorporated | Structure and method for power field effect transistor |
| WO2012021310A1 (en) * | 2010-08-09 | 2012-02-16 | Rambus Inc. | Disaggregated semiconductor chip assembly and packaging technique |
| US8666505B2 (en) * | 2010-10-26 | 2014-03-04 | Medtronic, Inc. | Wafer-scale package including power source |
| US9337116B2 (en) * | 2010-10-28 | 2016-05-10 | Stats Chippac, Ltd. | Semiconductor device and method of forming stepped interposer for stacking and electrically connecting semiconductor die |
| US8994048B2 (en) * | 2010-12-09 | 2015-03-31 | Stats Chippac, Ltd. | Semiconductor device and method of forming recesses in substrate for same size or different sized die with vertical integration |
| CN102169872B (zh) * | 2011-01-26 | 2013-07-03 | 上海腾怡半导体有限公司 | 集成电感的电源模块 |
| GB2492551A (en) * | 2011-07-04 | 2013-01-09 | Accuric Ltd | Current regulator |
| US9589929B2 (en) * | 2013-03-14 | 2017-03-07 | Vishay-Siliconix | Method for fabricating stack die package |
| JP2014209091A (ja) * | 2013-03-25 | 2014-11-06 | ローム株式会社 | 半導体装置 |
| TWI518844B (zh) * | 2013-12-11 | 2016-01-21 | 矽品精密工業股份有限公司 | 封裝結構及其製法 |
| CN105575913B (zh) * | 2016-02-23 | 2019-02-01 | 华天科技（昆山）电子有限公司 | 埋入硅基板扇出型3d封装结构 |
-
2014
- 2014-11-11 US US14/537,943 patent/US9305852B1/en active Active
-
2015
- 2015-11-11 CN CN201580059417.8A patent/CN107078124B/zh active Active
- 2015-11-11 WO PCT/US2015/060208 patent/WO2016077488A1/en not_active Ceased
- 2015-11-11 EP EP15859853.2A patent/EP3218930B1/en active Active
- 2015-11-11 JP JP2017525537A patent/JP6709785B2/ja active Active
-
2016
- 2016-02-25 US US15/053,089 patent/US10109614B2/en active Active
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