JP6709785B2 - 半導体チップを有する電子システムのためのパッケージ - Google Patents

半導体チップを有する電子システムのためのパッケージ Download PDF

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JP6709785B2
JP6709785B2 JP2017525537A JP2017525537A JP6709785B2 JP 6709785 B2 JP6709785 B2 JP 6709785B2 JP 2017525537 A JP2017525537 A JP 2017525537A JP 2017525537 A JP2017525537 A JP 2017525537A JP 6709785 B2 JP6709785 B2 JP 6709785B2
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chip
semiconductor
slab
terminal
central area
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JP2017535960A5 (enExample
JP2017535960A (ja
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ジョージ ロペス オスヴァルド
ジョージ ロペス オスヴァルド
アルメリア ノキル ジョナサン
アルメリア ノキル ジョナサン
ユージーン グレブス トーマス
ユージーン グレブス トーマス
ジョン モロイ シモン
ジョン モロイ シモン
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日本テキサス・インスツルメンツ合同会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • H01L2924/1304—Transistor
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    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof

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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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EP3279935B1 (en) * 2016-08-02 2019-01-02 ABB Schweiz AG Power semiconductor module
US20200235067A1 (en) * 2019-01-22 2020-07-23 Texas Instruments Incorporated Electronic device flip chip package with exposed clip
US11031321B2 (en) * 2019-03-15 2021-06-08 Infineon Technologies Ag Semiconductor device having a die pad with a dam-like configuration
US11024564B2 (en) 2019-06-19 2021-06-01 Texas Instruments Incorporated Packaged electronic device with film isolated power stack
EP3944304A1 (en) * 2020-07-20 2022-01-26 Nexperia B.V. A semiconductor device and a method of manufacture
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EP1501126A1 (en) * 2003-11-05 2005-01-26 Infineon Technologies AG Semiconductor chip having a cavity for stacked die application
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US20160172338A1 (en) 2016-06-16
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