JP6709785B2 - 半導体チップを有する電子システムのためのパッケージ - Google Patents

半導体チップを有する電子システムのためのパッケージ Download PDF

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JP6709785B2
JP6709785B2 JP2017525537A JP2017525537A JP6709785B2 JP 6709785 B2 JP6709785 B2 JP 6709785B2 JP 2017525537 A JP2017525537 A JP 2017525537A JP 2017525537 A JP2017525537 A JP 2017525537A JP 6709785 B2 JP6709785 B2 JP 6709785B2
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chip
semiconductor
slab
terminal
central area
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JP2017535960A (ja
JP2017535960A5 (enExample
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ジョージ ロペス オスヴァルド
ジョージ ロペス オスヴァルド
アルメリア ノキル ジョナサン
アルメリア ノキル ジョナサン
ユージーン グレブス トーマス
ユージーン グレブス トーマス
ジョン モロイ シモン
ジョン モロイ シモン
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日本テキサス・インスツルメンツ合同会社
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/698—Semiconductor materials that are electrically insulating, e.g. undoped silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/12—Containers or parts thereof characterised by their shape
    • H10W76/15—Containers comprising an insulating or insulated base
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W76/00—Containers; Fillings or auxiliary members therefor; Seals
    • H10W76/10—Containers or parts thereof
    • H10W76/17—Containers or parts thereof characterised by their materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00—Packaging processes not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/658—Shapes or dispositions of interconnections for devices provided for in groups H10D8/00 - H10D48/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/682—Shapes or dispositions thereof comprising holes having chips therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/074—Connecting or disconnecting of anisotropic conductive adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/288—Configurations of stacked chips characterised by arrangements for thermal management of the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips

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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
JP2017525537A 2014-11-11 2015-11-11 半導体チップを有する電子システムのためのパッケージ Active JP6709785B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/537,943 US9305852B1 (en) 2014-11-11 2014-11-11 Silicon package for embedded electronic system having stacked semiconductor chips
US14/537,943 2014-11-11
PCT/US2015/060208 WO2016077488A1 (en) 2014-11-11 2015-11-11 Package for electronic system having semiconductor chips

Publications (3)

Publication Number Publication Date
JP2017535960A JP2017535960A (ja) 2017-11-30
JP2017535960A5 JP2017535960A5 (enExample) 2018-12-20
JP6709785B2 true JP6709785B2 (ja) 2020-06-17

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JP2017525537A Active JP6709785B2 (ja) 2014-11-11 2015-11-11 半導体チップを有する電子システムのためのパッケージ

Country Status (5)

Country Link
US (2) US9305852B1 (enExample)
EP (1) EP3218930B1 (enExample)
JP (1) JP6709785B2 (enExample)
CN (1) CN107078124B (enExample)
WO (1) WO2016077488A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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US12707998B2 (en) 2022-09-22 2026-08-11 Kabushiki Kaisha Toshiba Semiconductor device

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US9893058B2 (en) * 2015-09-17 2018-02-13 Semiconductor Components Industries, Llc Method of manufacturing a semiconductor device having reduced on-state resistance and structure
EP3279935B1 (en) * 2016-08-02 2019-01-02 ABB Schweiz AG Power semiconductor module
US20200235067A1 (en) * 2019-01-22 2020-07-23 Texas Instruments Incorporated Electronic device flip chip package with exposed clip
US11031321B2 (en) * 2019-03-15 2021-06-08 Infineon Technologies Ag Semiconductor device having a die pad with a dam-like configuration
US11024564B2 (en) 2019-06-19 2021-06-01 Texas Instruments Incorporated Packaged electronic device with film isolated power stack
EP3944304A1 (en) * 2020-07-20 2022-01-26 Nexperia B.V. A semiconductor device and a method of manufacture
CN114899171B (zh) * 2022-04-29 2025-10-03 佛山市国星光电股份有限公司 一种无焊线功率器件
CN115188853A (zh) * 2022-08-15 2022-10-14 西安西热产品认证检测有限公司 一种低温双面光伏组件

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US4568958A (en) * 1984-01-03 1986-02-04 General Electric Company Inversion-mode insulated-gate gallium arsenide field-effect transistors
JP4052078B2 (ja) * 2002-10-04 2008-02-27 富士通株式会社 半導体装置
EP1501126A1 (en) * 2003-11-05 2005-01-26 Infineon Technologies AG Semiconductor chip having a cavity for stacked die application
US7279786B2 (en) * 2005-02-04 2007-10-09 Stats Chippac Ltd. Nested integrated circuit package on package system
US9147649B2 (en) * 2008-01-24 2015-09-29 Infineon Technologies Ag Multi-chip module
US8358014B2 (en) * 2009-05-28 2013-01-22 Texas Instruments Incorporated Structure and method for power field effect transistor
WO2012021310A1 (en) * 2010-08-09 2012-02-16 Rambus Inc. Disaggregated semiconductor chip assembly and packaging technique
US8666505B2 (en) * 2010-10-26 2014-03-04 Medtronic, Inc. Wafer-scale package including power source
US9337116B2 (en) * 2010-10-28 2016-05-10 Stats Chippac, Ltd. Semiconductor device and method of forming stepped interposer for stacking and electrically connecting semiconductor die
US8994048B2 (en) * 2010-12-09 2015-03-31 Stats Chippac, Ltd. Semiconductor device and method of forming recesses in substrate for same size or different sized die with vertical integration
CN102169872B (zh) * 2011-01-26 2013-07-03 上海腾怡半导体有限公司 集成电感的电源模块
GB2492551A (en) * 2011-07-04 2013-01-09 Accuric Ltd Current regulator
US9589929B2 (en) * 2013-03-14 2017-03-07 Vishay-Siliconix Method for fabricating stack die package
JP2014209091A (ja) * 2013-03-25 2014-11-06 ローム株式会社 半導体装置
TWI518844B (zh) * 2013-12-11 2016-01-21 矽品精密工業股份有限公司 封裝結構及其製法
CN105575913B (zh) * 2016-02-23 2019-02-01 华天科技（昆山）电子有限公司 埋入硅基板扇出型3d封装结构

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12707998B2 (en) 2022-09-22 2026-08-11 Kabushiki Kaisha Toshiba Semiconductor device

Also Published As

Publication number Publication date
EP3218930A1 (en) 2017-09-20
EP3218930A4 (en) 2018-07-25
JP2017535960A (ja) 2017-11-30
US20160172338A1 (en) 2016-06-16
WO2016077488A1 (en) 2016-05-19
EP3218930B1 (en) 2020-05-27
CN107078124A (zh) 2017-08-18
US10109614B2 (en) 2018-10-23
US9305852B1 (en) 2016-04-05
CN107078124B (zh) 2020-11-06

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