JP2017528008A5 - - Google Patents
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- Publication number
- JP2017528008A5 JP2017528008A5 JP2017534003A JP2017534003A JP2017528008A5 JP 2017528008 A5 JP2017528008 A5 JP 2017528008A5 JP 2017534003 A JP2017534003 A JP 2017534003A JP 2017534003 A JP2017534003 A JP 2017534003A JP 2017528008 A5 JP2017528008 A5 JP 2017528008A5
- Authority
- JP
- Japan
- Prior art keywords
- light wave
- transverse
- mirror
- light
- modes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000007493 shaping process Methods 0.000 claims description 7
- 239000004038 photonic crystal Substances 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims 8
- 238000000034 method Methods 0.000 claims 6
- 230000003595 spectral effect Effects 0.000 claims 4
- 238000002835 absorbance Methods 0.000 claims 3
- 238000001914 filtration Methods 0.000 claims 2
- 230000003750 conditioning effect Effects 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 230000010363 phase shift Effects 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 description 2
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR14/02058 | 2014-09-15 | ||
| FR1402058A FR3025948B1 (fr) | 2014-09-15 | 2014-09-15 | Dispositif laser a cavite externe verticale a emission par la surface a double frequence pour la generation de thz et procede de generation de thz |
| PCT/EP2015/071139 WO2016041993A1 (fr) | 2014-09-15 | 2015-09-15 | Dispositif laser a cavite externe verticale a emission par la surface a double frequences, pour la generation de thz et procede de generation de thz |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017528008A JP2017528008A (ja) | 2017-09-21 |
| JP2017528008A5 true JP2017528008A5 (https=) | 2020-07-16 |
| JP6805149B2 JP6805149B2 (ja) | 2020-12-23 |
Family
ID=52684255
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017534003A Expired - Fee Related JP6805149B2 (ja) | 2014-09-15 | 2015-09-15 | ＴＨｚ生成のための二重周波数垂直外部キャビティ面発光レーザデバイスおよびＴＨｚを生成する方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10141718B2 (https=) |
| EP (1) | EP3195428B1 (https=) |
| JP (1) | JP6805149B2 (https=) |
| FR (1) | FR3025948B1 (https=) |
| WO (1) | WO2016041993A1 (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102017129173A1 (de) * | 2017-12-07 | 2019-06-13 | Osram Opto Semiconductors Gmbh | Strahlungsquelle zur Emission von Terahertz-Strahlung |
| FR3078834B1 (fr) * | 2018-03-08 | 2020-03-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif d’emission lumineuse comportant au moins un vcsel et une lentille de diffusion |
| CN108535891B (zh) * | 2018-04-11 | 2020-01-10 | 雄安华讯方舟科技有限公司 | 一种太赫兹波波前相位调制方法 |
| CN109031241B (zh) * | 2018-06-27 | 2021-03-23 | 森思泰克河北科技有限公司 | 激光雷达发射系统 |
| CN109586146B (zh) * | 2019-01-10 | 2019-10-15 | 北京邮电大学 | 一种太赫兹波发生器 |
| KR102745348B1 (ko) | 2019-09-23 | 2024-12-23 | 삼성전자주식회사 | 광 변조 소자, 이를 포함하는 빔 스티어링 장치 및 빔 스티어링 장치를 포함하는 전자 장치 |
| US11588298B2 (en) | 2020-06-23 | 2023-02-21 | Hewlett Packard Enterprise Development Lp | Coupled-cavity VCSELs for enhanced modulation bandwidth |
| US12212113B2 (en) | 2022-03-31 | 2025-01-28 | Xemed Llc | Gaseous laser systems with edge-defining element and related techniques |
| US12548968B2 (en) | 2022-03-31 | 2026-02-10 | Xemed Llc | Gaseous laser systems with edge-defining element and related techniques |
| US11855406B2 (en) * | 2022-03-31 | 2023-12-26 | Xemed Llc | Gaseous laser systems with edge-defining element and related techniques |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6658034B2 (en) * | 2000-12-13 | 2003-12-02 | Picarro, Inc. | Surface-emitting semiconductor laser |
| US6711203B1 (en) * | 2000-09-22 | 2004-03-23 | Blueleaf, Inc. | Optical transmitter comprising a stepwise tunable laser |
| JP4232475B2 (ja) * | 2003-02-03 | 2009-03-04 | ソニー株式会社 | 面発光レーザ素子 |
| DE10339980B4 (de) * | 2003-08-29 | 2011-01-05 | Osram Opto Semiconductors Gmbh | Halbleiterlaser mit reduzierter Verlustwärme |
| WO2006056208A2 (en) * | 2004-11-29 | 2006-06-01 | Alight Technologies A/S | Single-mode photonic-crystal vcsels |
| KR100657963B1 (ko) * | 2005-06-28 | 2006-12-14 | 삼성전자주식회사 | 고출력 수직외부공진형 표면발광 레이저 |
| US9397476B2 (en) * | 2007-05-07 | 2016-07-19 | Koninklijke Philips N.V. | Laser sensor for self-mixing interferometry having a vertical external cavity surface emission laser (VECSEL) as the light source |
| DE102008021791A1 (de) * | 2008-04-30 | 2009-11-26 | ARIZONA BOARD OF REGENTS, on behalf of THE UNIVERSITY OF ARIZONA, Tucson | Laserbasierte Quelle für Terahertz- und Millimeterwellen |
| EP2369696A1 (en) * | 2010-03-23 | 2011-09-28 | ETH Zurich | Surface-Emitting semiconductor laser and method of manufacture thereof |
| JP5335819B2 (ja) * | 2010-09-14 | 2013-11-06 | キヤノン株式会社 | フォトニック結晶面発光レーザ、該レーザを用いたレーザアレイ、該レーザアレイを用いた画像形成装置 |
-
2014
- 2014-09-15 FR FR1402058A patent/FR3025948B1/fr active Active
-
2015
- 2015-09-15 EP EP15775115.7A patent/EP3195428B1/fr active Active
- 2015-09-15 WO PCT/EP2015/071139 patent/WO2016041993A1/fr not_active Ceased
- 2015-09-15 JP JP2017534003A patent/JP6805149B2/ja not_active Expired - Fee Related
- 2015-09-15 US US15/511,199 patent/US10141718B2/en not_active Expired - Fee Related
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