FR3025948B1 - Dispositif laser a cavite externe verticale a emission par la surface a double frequence pour la generation de thz et procede de generation de thz - Google Patents

Dispositif laser a cavite externe verticale a emission par la surface a double frequence pour la generation de thz et procede de generation de thz Download PDF

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Publication number
FR3025948B1
FR3025948B1 FR1402058A FR1402058A FR3025948B1 FR 3025948 B1 FR3025948 B1 FR 3025948B1 FR 1402058 A FR1402058 A FR 1402058A FR 1402058 A FR1402058 A FR 1402058A FR 3025948 B1 FR3025948 B1 FR 3025948B1
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FR
France
Prior art keywords
thz
laser device
generating method
external cavity
dual frequency
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Application number
FR1402058A
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English (en)
French (fr)
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FR3025948A1 (https=
Inventor
Arnaud GARNACHE-CREUILLOT
Mikhael MYARA
Stephane Blin
Isabelle Sagnes
Gregoire Beaudoin
Mohamed SELLAHI
Romain PAQUET
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Universite de Montpellier
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Centre National de la Recherche Scientifique CNRS
Universite de Montpellier
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Priority to FR1402058A priority Critical patent/FR3025948B1/fr
Priority to PCT/EP2015/071139 priority patent/WO2016041993A1/fr
Priority to US15/511,199 priority patent/US10141718B2/en
Priority to EP15775115.7A priority patent/EP3195428B1/fr
Priority to JP2017534003A priority patent/JP6805149B2/ja
Publication of FR3025948A1 publication Critical patent/FR3025948A1/fr
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/08018—Mode suppression
    • H01S3/0804—Transverse or lateral modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
    • H01S3/1065—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using liquid crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0078—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for frequency filtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1092—Multi-wavelength lasing
    • H01S5/1096—Multi-wavelength lasing in a single cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/11—Comprising a photonic bandgap structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H01S2302/02—THz - lasers, i.e. lasers with emission in the wavelength range of typically 0.1 mm to 1 mm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/041—Optical pumping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18319—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement comprising a periodical structure in lateral directions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
FR1402058A 2014-09-15 2014-09-15 Dispositif laser a cavite externe verticale a emission par la surface a double frequence pour la generation de thz et procede de generation de thz Active FR3025948B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR1402058A FR3025948B1 (fr) 2014-09-15 2014-09-15 Dispositif laser a cavite externe verticale a emission par la surface a double frequence pour la generation de thz et procede de generation de thz
PCT/EP2015/071139 WO2016041993A1 (fr) 2014-09-15 2015-09-15 Dispositif laser a cavite externe verticale a emission par la surface a double frequences, pour la generation de thz et procede de generation de thz
US15/511,199 US10141718B2 (en) 2014-09-15 2015-09-15 Dual-frequency vertical-external-cavity surface-emitting laser device for THz generation and method for generating THz
EP15775115.7A EP3195428B1 (fr) 2014-09-15 2015-09-15 Dispositif laser a cavite externe verticale a emission par la surface a double frequences, pour la generation de thz et procede de generation de thz.
JP2017534003A JP6805149B2 (ja) 2014-09-15 2015-09-15 ＴＨｚ生成のための二重周波数垂直外部キャビティ面発光レーザデバイスおよびＴＨｚを生成する方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1402058A FR3025948B1 (fr) 2014-09-15 2014-09-15 Dispositif laser a cavite externe verticale a emission par la surface a double frequence pour la generation de thz et procede de generation de thz
FR1402058 2014-09-15

Publications (2)

Publication Number Publication Date
FR3025948A1 FR3025948A1 (https=) 2016-03-18
FR3025948B1 true FR3025948B1 (fr) 2018-03-16

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FR1402058A Active FR3025948B1 (fr) 2014-09-15 2014-09-15 Dispositif laser a cavite externe verticale a emission par la surface a double frequence pour la generation de thz et procede de generation de thz

Country Status (5)

Country Link
US (1) US10141718B2 (https=)
EP (1) EP3195428B1 (https=)
JP (1) JP6805149B2 (https=)
FR (1) FR3025948B1 (https=)
WO (1) WO2016041993A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017129173A1 (de) * 2017-12-07 2019-06-13 Osram Opto Semiconductors Gmbh Strahlungsquelle zur Emission von Terahertz-Strahlung
FR3078834B1 (fr) * 2018-03-08 2020-03-27 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif d’emission lumineuse comportant au moins un vcsel et une lentille de diffusion
CN108535891B (zh) * 2018-04-11 2020-01-10 雄安华讯方舟科技有限公司 一种太赫兹波波前相位调制方法
CN109031241B (zh) * 2018-06-27 2021-03-23 森思泰克河北科技有限公司 激光雷达发射系统
CN109586146B (zh) * 2019-01-10 2019-10-15 北京邮电大学 一种太赫兹波发生器
KR102745348B1 (ko) 2019-09-23 2024-12-23 삼성전자주식회사 광 변조 소자, 이를 포함하는 빔 스티어링 장치 및 빔 스티어링 장치를 포함하는 전자 장치
US11588298B2 (en) 2020-06-23 2023-02-21 Hewlett Packard Enterprise Development Lp Coupled-cavity VCSELs for enhanced modulation bandwidth
US12212113B2 (en) 2022-03-31 2025-01-28 Xemed Llc Gaseous laser systems with edge-defining element and related techniques
US12548968B2 (en) 2022-03-31 2026-02-10 Xemed Llc Gaseous laser systems with edge-defining element and related techniques
US11855406B2 (en) * 2022-03-31 2023-12-26 Xemed Llc Gaseous laser systems with edge-defining element and related techniques

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
US6658034B2 (en) * 2000-12-13 2003-12-02 Picarro, Inc. Surface-emitting semiconductor laser
US6711203B1 (en) * 2000-09-22 2004-03-23 Blueleaf, Inc. Optical transmitter comprising a stepwise tunable laser
JP4232475B2 (ja) * 2003-02-03 2009-03-04 ソニー株式会社 面発光レーザ素子
DE10339980B4 (de) * 2003-08-29 2011-01-05 Osram Opto Semiconductors Gmbh Halbleiterlaser mit reduzierter Verlustwärme
WO2006056208A2 (en) * 2004-11-29 2006-06-01 Alight Technologies A/S Single-mode photonic-crystal vcsels
KR100657963B1 (ko) * 2005-06-28 2006-12-14 삼성전자주식회사 고출력 수직외부공진형 표면발광 레이저
US9397476B2 (en) * 2007-05-07 2016-07-19 Koninklijke Philips N.V. Laser sensor for self-mixing interferometry having a vertical external cavity surface emission laser (VECSEL) as the light source
DE102008021791A1 (de) * 2008-04-30 2009-11-26 ARIZONA BOARD OF REGENTS, on behalf of THE UNIVERSITY OF ARIZONA, Tucson Laserbasierte Quelle für Terahertz- und Millimeterwellen
EP2369696A1 (en) * 2010-03-23 2011-09-28 ETH Zurich Surface-Emitting semiconductor laser and method of manufacture thereof
JP5335819B2 (ja) * 2010-09-14 2013-11-06 キヤノン株式会社 フォトニック結晶面発光レーザ、該レーザを用いたレーザアレイ、該レーザアレイを用いた画像形成装置

Also Published As

Publication number Publication date
FR3025948A1 (https=) 2016-03-18
JP6805149B2 (ja) 2020-12-23
US10141718B2 (en) 2018-11-27
JP2017528008A (ja) 2017-09-21
WO2016041993A1 (fr) 2016-03-24
EP3195428A1 (fr) 2017-07-26
US20170256913A1 (en) 2017-09-07
EP3195428B1 (fr) 2020-07-22

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