JP2017525839A - 焼結材料、及びそれを用いる接着方法 - Google Patents

焼結材料、及びそれを用いる接着方法 Download PDF

Info

Publication number
JP2017525839A
JP2017525839A JP2016572384A JP2016572384A JP2017525839A JP 2017525839 A JP2017525839 A JP 2017525839A JP 2016572384 A JP2016572384 A JP 2016572384A JP 2016572384 A JP2016572384 A JP 2016572384A JP 2017525839 A JP2017525839 A JP 2017525839A
Authority
JP
Japan
Prior art keywords
substrate
film
die
assembly
pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016572384A
Other languages
English (en)
Japanese (ja)
Inventor
シャミック・ゴシャール
サティシュ・ブイ・クマール
パヴァン・ビシュワナート
ランジット・エス・パンサー
レミャ・チャンドラン
スタパ・ムカジー
シウリ・サルカール
バワ・シン
ラビンドラ・モハン・バトカル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alpha Assembly Solutions Inc
Original Assignee
Alpha Assembly Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alpha Assembly Solutions Inc filed Critical Alpha Assembly Solutions Inc
Publication of JP2017525839A publication Critical patent/JP2017525839A/ja
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/1017—Multiple heating or additional steps
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/07—Metallic powder characterised by particles having a nanoscale microstructure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/22—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces for producing castings from a slip
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F5/00—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product
    • B22F5/006—Manufacture of workpieces or articles from metallic powder characterised by the special shape of the product of flat products, e.g. sheets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Soldering of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K3/00—Tools, devices or special appurtenances for soldering, e.g. brazing, or unsoldering, not specially adapted for particular methods
    • B23K3/06—Solder feeding devices; Solder melting pans
    • B23K3/0607—Solder feeding devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering or brazing
    • B23K35/0244—Powders, particles or spheres; Preforms made therefrom
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
    • B23K35/3006—Ag as the principal constituent
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/17—Metallic particles coated with metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
    • B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
    • B22F2007/042—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method
    • B22F2007/047—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method non-pressurised baking of the paste or slurry containing metal powder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2301/00—Metallic composition of the powder or its coating
    • B22F2301/25—Noble metals, i.e. Ag Au, Ir, Os, Pd, Pt, Rh, Ru
    • B22F2301/255—Silver or gold
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/741—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including a cavity for storing a finished or partly finished device during manufacturing or mounting, e.g. for an IC package or for a chip
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01204—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01212—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps at a different location than on the final device, e.g. forming as prepeg
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01225—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H10W72/01236—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition in solid form, e.g. by using a powder or by laminating a foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01261—Chemical or physical modification, e.g. by sintering or anodisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01265—Thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01304—Manufacture or treatment of die-attach connectors using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01315—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01321—Manufacture or treatment of die-attach connectors using local deposition
    • H10W72/01323—Manufacture or treatment of die-attach connectors using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01321—Manufacture or treatment of die-attach connectors using local deposition
    • H10W72/01325—Manufacture or treatment of die-attach connectors using local deposition in solid form
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01331—Manufacture or treatment of die-attach connectors using blanket deposition
    • H10W72/01336—Manufacture or treatment of die-attach connectors using blanket deposition in solid form, e.g. by using a powder or by laminating a foil
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01361—Chemical or physical modification, e.g. by sintering or anodisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/013—Manufacture or treatment of die-attach connectors
    • H10W72/01365—Thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07202—Connecting or disconnecting of bump connectors using auxiliary members
    • H10W72/07204—Connecting or disconnecting of bump connectors using auxiliary members using temporary auxiliary members, e.g. sacrificial coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07302—Connecting or disconnecting of die-attach connectors using an auxiliary member
    • H10W72/07304—Connecting or disconnecting of die-attach connectors using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07335—Applying EM radiation, e.g. induction heating or using a laser
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/076—Connecting or disconnecting of strap connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/221—Structures or relative sizes
    • H10W72/225—Bumps having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/253—Materials not comprising solid metals or solid metalloids, e.g. polymers or ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/355—Materials of die-attach connectors of outermost layers of multilayered die-attach connectors, e.g. material of a coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/533—Cross-sectional shape
    • H10W72/534—Cross-sectional shape being rectangular
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Composite Materials (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Die Bonding (AREA)
  • Powder Metallurgy (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Ceramic Products (AREA)
  • Manufacturing Of Printed Wiring (AREA)
JP2016572384A 2014-06-12 2015-06-12 焼結材料、及びそれを用いる接着方法 Pending JP2017525839A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IN2873CH2014 2014-06-12
IN2873/CHE/2014 2014-06-12
PCT/US2015/035566 WO2015192004A1 (en) 2014-06-12 2015-06-12 Sintering materials and attachment methods using same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2019216135A Division JP7001659B2 (ja) 2014-06-12 2019-11-29 焼結材料、及びそれを用いる接着方法

Publications (1)

Publication Number Publication Date
JP2017525839A true JP2017525839A (ja) 2017-09-07

Family

ID=54834397

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2016572384A Pending JP2017525839A (ja) 2014-06-12 2015-06-12 焼結材料、及びそれを用いる接着方法
JP2019216135A Active JP7001659B2 (ja) 2014-06-12 2019-11-29 焼結材料、及びそれを用いる接着方法
JP2021210036A Active JP7489956B2 (ja) 2014-06-12 2021-12-24 焼結材料、及びそれを用いる接着方法
JP2024009864A Withdrawn JP2024045324A (ja) 2014-06-12 2024-01-26 焼結材料、及びそれを用いる接着方法

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2019216135A Active JP7001659B2 (ja) 2014-06-12 2019-11-29 焼結材料、及びそれを用いる接着方法
JP2021210036A Active JP7489956B2 (ja) 2014-06-12 2021-12-24 焼結材料、及びそれを用いる接着方法
JP2024009864A Withdrawn JP2024045324A (ja) 2014-06-12 2024-01-26 焼結材料、及びそれを用いる接着方法

Country Status (7)

Country Link
US (1) US11389865B2 (https=)
EP (1) EP3154729A4 (https=)
JP (4) JP2017525839A (https=)
KR (5) KR20220106240A (https=)
CN (1) CN106660120A (https=)
BR (1) BR112016029118A2 (https=)
WO (1) WO2015192004A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020535303A (ja) * 2018-08-29 2020-12-03 ヨン ドン テック カンパニー リミテッドＹｏｕｎｇ Ｄｏｎｇ Ｔｅｃｈ Ｃｏ．，Ｌｔｄ． 銀と銅の固溶体を含む金属ナノ粉末
JP2021150548A (ja) * 2020-03-23 2021-09-27 富士電機株式会社 半導体製造装置及び半導体装置の製造方法
JP2022531686A (ja) * 2019-05-07 2022-07-08 アルファ・アセンブリー・ソリューションズ・インコーポレイテッド 焼結準備済み銀フィルム
JP2022111042A (ja) * 2021-01-18 2022-07-29 日東電工株式会社 半導体装置、及び、半導体装置の製造方法。

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015120156B4 (de) * 2015-11-20 2019-07-04 Semikron Elektronik Gmbh & Co. Kg Vorrichtung zur materialschlüssigen Verbindung von Verbindungspartnern eines Leistungselekronik-Bauteils und Verwendung einer solchen Vorrichtung
JP6815133B2 (ja) 2016-08-31 2021-01-20 日東電工株式会社 加熱接合用シート、及び、ダイシングテープ付き加熱接合用シート
US20180166369A1 (en) * 2016-12-14 2018-06-14 Texas Instruments Incorporated Bi-Layer Nanoparticle Adhesion Film
US9865527B1 (en) 2016-12-22 2018-01-09 Texas Instruments Incorporated Packaged semiconductor device having nanoparticle adhesion layer patterned into zones of electrical conductance and insulation
MY195254A (en) * 2017-01-11 2023-01-11 Hitachi Chemical Co Ltd Copper Paste for Pressureless Bonding, Bonded Body And Semiconductor Device
US9941194B1 (en) 2017-02-21 2018-04-10 Texas Instruments Incorporated Packaged semiconductor device having patterned conductance dual-material nanoparticle adhesion layer
DE112017007299B4 (de) * 2017-03-23 2024-10-10 Mitsubishi Electric Corporation Halbleiterelement-bonding-körper, halbleitereinheit und verfahren zur herstellung eines halbleiterelement-bonding-körpers
JP7127269B2 (ja) * 2017-10-23 2022-08-30 昭和電工マテリアルズ株式会社 部材接続方法
JP7043794B2 (ja) 2017-11-06 2022-03-30 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板およびヒートシンク付パワーモジュール用基板の製造方法
CN108016032B (zh) * 2017-12-05 2019-08-13 广西艾盛创制科技有限公司 一种提高打印件强度韧性的3d打印成型工艺方法和装置
CN108098092A (zh) * 2017-12-21 2018-06-01 成都川美新技术股份有限公司 一种采用焊锡膏对射频基板与壳体进行烧结的方法
JP7143156B2 (ja) * 2018-04-27 2022-09-28 日東電工株式会社 半導体装置製造方法
JP7228422B2 (ja) * 2019-03-15 2023-02-24 日東電工株式会社 焼結接合用シート、基材付き焼結接合用シート、および焼結接合用材料層付き半導体チップ
CN109819384A (zh) * 2019-04-09 2019-05-28 重庆三峡学院 一种mems麦克风封装器件的制造方法
JP6675622B1 (ja) * 2019-04-25 2020-04-01 アサヒ・エンジニアリング株式会社 電子部品のシンタリング装置および方法
JP6624626B1 (ja) * 2019-07-29 2019-12-25 アサヒ・エンジニアリング株式会社 電子部品のシンタリング装置
US11373976B2 (en) * 2019-08-02 2022-06-28 Rockwell Collins, Inc. System and method for extreme performance die attach
EP3817044A1 (en) * 2019-11-04 2021-05-05 Infineon Technologies Austria AG Semiconductor package with a silicon carbide power semiconductor chip diffusion soldered to a copper leadframe part and a corresponding manufacturing method
CN113345861A (zh) * 2020-02-18 2021-09-03 朋程科技股份有限公司 功率组件的半成品及其制造方法以及功率组件的制造方法
JP7239051B2 (ja) * 2020-03-04 2023-03-14 株式会社デンソー 半導体装置およびその製造方法
WO2021259536A2 (de) * 2020-06-23 2021-12-30 Siemens Aktiengesellschaft Verfahren zur kontaktierung eines leistungshalbleiters auf einem substrat
US20220230989A1 (en) * 2021-01-18 2022-07-21 Nitto Denko Corporation Semiconductor device and method for producing semiconductor device
FR3121277B1 (fr) * 2021-03-26 2024-02-16 Safran Electronics & Defense Procédé pour assembler un composant électronique à un substrat
WO2023282976A2 (en) * 2021-05-24 2023-01-12 Corning Research & Development Corporation Systems and methods of joining substrates using nano-particles
GB2612776A (en) * 2021-11-10 2023-05-17 Asm Assembly Systems Singapore Pte Ltd Deposit levelling
JP2023073819A (ja) * 2021-11-16 2023-05-26 富士電機株式会社 半導体装置及びその製造方法
DK4494182T3 (da) * 2022-03-15 2026-03-16 Alpha Assembly Solutions Inc Sinterklare bonding-områder på flerlagstråde/-bånd og fremgangsmåde til chipoversidefastgørelse
JP7683528B2 (ja) * 2022-04-05 2025-05-27 株式会社三洋物産 遊技機
JP7683529B2 (ja) * 2022-04-05 2025-05-27 株式会社三洋物産 遊技機
US20240182757A1 (en) * 2022-12-02 2024-06-06 Wolfspeed, Inc. Core-Shell Particle Die-Attach Material
US12588521B2 (en) 2023-02-15 2026-03-24 Wolfspeed, Inc. Metal nitride core-shell particle die-attach material
EP4421054A1 (de) 2023-02-23 2024-08-28 Heraeus Electronics GmbH & Co. KG Kupfer-keramik-substrat mit sinterbarer oberseite
EP4421055A1 (de) 2023-02-23 2024-08-28 Heraeus Electronics GmbH & Co. KG Kupfer-keramik-substrat mit sinterbarer oberseite
EP4421056A1 (de) 2023-02-23 2024-08-28 Heraeus Electronics GmbH & Co. KG Metall-keramik-substrat mit sinterbarer oberseite
DE102023104436A1 (de) 2023-02-23 2024-08-29 Heraeus Deutschland GmbH & Co. KG Metall-Keramik-Substrat mit sinterbarer Oberseite
EP4443487A1 (de) 2023-04-04 2024-10-09 Heraeus Electronics GmbH & Co. KG Substratanordnung mit oberflächenstruktur
EP4443488A1 (de) 2023-04-04 2024-10-09 Heraeus Electronics GmbH & Co. KG Substratanordnung mit oberflächenstruktur
WO2024232130A1 (ja) 2023-05-09 2024-11-14 株式会社新川 半導体装置の製造方法
JP2025086811A (ja) 2023-11-28 2025-06-09 株式会社Pfa 接合体製造装置および接合体製造方法
EP4700826A1 (de) 2024-08-23 2026-02-25 Heraeus Electronics GmbH & Co. KG Substratanordnung, verfahren zur herstellung einer elektronischen baugruppe und elektronische baugruppe
CN118737861B (zh) * 2024-09-04 2024-11-12 深圳平创半导体有限公司 一种晶圆的金属化方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007224420A (ja) * 2006-02-24 2007-09-06 Samsung Electro-Mechanics Co Ltd コア−シェル構造の金属ナノ粒子及びその製造方法
JP2010185135A (ja) * 2009-01-14 2010-08-26 Kyushu Univ コアシェル型金属ナノ粒子の製造方法
US20110183128A1 (en) * 2008-06-23 2011-07-28 Yissum Research Development Company Of The Hebrew University Of Jerusalem, Ltd. Core-shell metallic nanoparticles, methods of production thereof, and ink compositions containing same
JP2014503936A (ja) * 2010-11-03 2014-02-13 フライズ・メタルズ・インコーポレイテッド 焼結材料およびこれを用いた取付方法

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3871845A (en) 1973-06-25 1975-03-18 Clarkes Sheet Metal Industrial air filter
JPS5725248Y2 (https=) * 1977-01-18 1982-06-01
US6562169B2 (en) * 2001-01-17 2003-05-13 International Business Machines Corporation Multi-level web structure in use for thin sheet processing
JP2004095832A (ja) 2002-08-30 2004-03-25 Fuji Electric Holdings Co Ltd フリップチップ実装方法
JP4495927B2 (ja) 2003-07-28 2010-07-07 新日鉄マテリアルズ株式会社 半導体装置およびその製造方法
US20050129843A1 (en) * 2003-12-11 2005-06-16 Xerox Corporation Nanoparticle deposition process
US8257795B2 (en) * 2004-02-18 2012-09-04 Virginia Tech Intellectual Properties, Inc. Nanoscale metal paste for interconnect and method of use
US7524351B2 (en) * 2004-09-30 2009-04-28 Intel Corporation Nano-sized metals and alloys, and methods of assembling packages containing same
KR100718726B1 (ko) * 2005-12-22 2007-05-16 성균관대학교산학협력단 폴리디비닐벤젠 구형 입자와 금속을 이용한 코어/쉘도전입자 및 이의 제조방법
US7968008B2 (en) * 2006-08-03 2011-06-28 Fry's Metals, Inc. Particles and inks and films using them
KR20080078396A (ko) * 2007-02-23 2008-08-27 엘지전자 주식회사 전극용 페이스트 조성물과 그 제조방법 및 이를 이용하는플라즈마 디스플레이 패널과 그 제조방법
KR101316253B1 (ko) * 2007-06-27 2013-10-08 동우 화인켐 주식회사 도전성 페이스트 조성물, 이를 포함하는 전극 및 상기전극의 제조방법
US8555491B2 (en) * 2007-07-19 2013-10-15 Alpha Metals, Inc. Methods of attaching a die to a substrate
KR100838647B1 (ko) * 2007-07-23 2008-06-16 한국과학기술원 Ａｃｆ／ｎｃｆ 이중층을 이용한 웨이퍼 레벨 플립칩패키지의 제조방법
US7749300B2 (en) 2008-06-05 2010-07-06 Xerox Corporation Photochemical synthesis of bimetallic core-shell nanoparticles
KR20100007035A (ko) * 2008-07-11 2010-01-22 주식회사 효성 이방성 도전 필름의 제조방법 및 이에 의해 제조된 이방성도전 필름
KR101074917B1 (ko) * 2009-03-31 2011-10-18 전북대학교산학협력단 코어-쉘 구조 복합나노입자를 감지물질로 이용한 박막형 고활성 가스센서 및 그 제조방법
WO2010117102A1 (ko) * 2009-04-09 2010-10-14 서강대학교 산학협력단 콜로이드 입자들을 단결정들로 정렬하는 방법
US20110318213A1 (en) 2009-09-08 2011-12-29 Carol Anne Handwerker Shell activated sintering of core-shell particles
KR101651932B1 (ko) * 2009-10-26 2016-08-30 한화케미칼 주식회사 카르복실산을 이용한 전도성 금속 박막의 제조방법
WO2012052191A1 (de) * 2010-10-20 2012-04-26 Robert Bosch Gmbh Ausgangswerkstoff und verfahren zur herstellung einer sinterverbindung
US9475963B2 (en) * 2011-09-15 2016-10-25 Trillion Science, Inc. Fixed array ACFs with multi-tier partially embedded particle morphology and their manufacturing processes
US20140141195A1 (en) * 2012-11-16 2014-05-22 Rong-Chang Liang FIXED ARRAY ACFs WITH MULTI-TIER PARTIALLY EMBEDDED PARTICLE MORPHOLOGY AND THEIR MANUFACTURING PROCESSES
US20140120356A1 (en) * 2012-06-18 2014-05-01 Ormet Circuits, Inc. Conductive film adhesive
US10239153B2 (en) * 2012-09-06 2019-03-26 Edison Welding Institute, Inc. Inertia friction welding system for martensite-free joining of materials
KR102675888B1 (ko) 2012-10-29 2024-06-14 알파 어셈블리 솔루션스 인크. 소결 분말
KR102210176B1 (ko) * 2013-03-15 2021-01-29 산드빅 인터렉츄얼 프로퍼티 에이비 상이한 크기 및 형상의 소결 부분들을 접합하는 방법
KR101455958B1 (ko) 2013-09-09 2014-10-31 천광주 마름방지장치를 구비한 출몰식 필기구
US10131177B2 (en) * 2014-02-07 2018-11-20 Entrust Datacard Corporation Barrier coating for a substrate
JP6480806B2 (ja) * 2014-05-23 2019-03-13 ゼネラル・エレクトリック・カンパニイ セラミックと金属を接合するための方法およびその封止構造
JP6933712B2 (ja) * 2016-09-27 2021-09-08 ノベリス・インコーポレイテッドＮｏｖｅｌｉｓ Ｉｎｃ． 表面品質を制御する金属の磁気浮上加熱
CN108016032B (zh) * 2017-12-05 2019-08-13 广西艾盛创制科技有限公司 一种提高打印件强度韧性的3d打印成型工艺方法和装置
CN108098092A (zh) * 2017-12-21 2018-06-01 成都川美新技术股份有限公司 一种采用焊锡膏对射频基板与壳体进行烧结的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007224420A (ja) * 2006-02-24 2007-09-06 Samsung Electro-Mechanics Co Ltd コア−シェル構造の金属ナノ粒子及びその製造方法
US20110183128A1 (en) * 2008-06-23 2011-07-28 Yissum Research Development Company Of The Hebrew University Of Jerusalem, Ltd. Core-shell metallic nanoparticles, methods of production thereof, and ink compositions containing same
JP2010185135A (ja) * 2009-01-14 2010-08-26 Kyushu Univ コアシェル型金属ナノ粒子の製造方法
JP2014503936A (ja) * 2010-11-03 2014-02-13 フライズ・メタルズ・インコーポレイテッド 焼結材料およびこれを用いた取付方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020535303A (ja) * 2018-08-29 2020-12-03 ヨン ドン テック カンパニー リミテッドＹｏｕｎｇ Ｄｏｎｇ Ｔｅｃｈ Ｃｏ．，Ｌｔｄ． 銀と銅の固溶体を含む金属ナノ粉末
JP2022531686A (ja) * 2019-05-07 2022-07-08 アルファ・アセンブリー・ソリューションズ・インコーポレイテッド 焼結準備済み銀フィルム
JP7259084B2 (ja) 2019-05-07 2023-04-17 アルファ・アセンブリー・ソリューションズ・インコーポレイテッド 焼結準備済み銀フィルム
JP2023082185A (ja) * 2019-05-07 2023-06-13 アルファ・アセンブリー・ソリューションズ・インコーポレイテッド 焼結準備済み銀フィルム
JP7507921B2 (ja) 2019-05-07 2024-06-28 アルファ・アセンブリー・ソリューションズ・インコーポレイテッド 焼結準備済み銀フィルム
JP2021150548A (ja) * 2020-03-23 2021-09-27 富士電機株式会社 半導体製造装置及び半導体装置の製造方法
JP7604779B2 (ja) 2020-03-23 2024-12-24 富士電機株式会社 半導体製造装置及び半導体装置の製造方法
JP2022111042A (ja) * 2021-01-18 2022-07-29 日東電工株式会社 半導体装置、及び、半導体装置の製造方法。

Also Published As

Publication number Publication date
BR112016029118A2 (pt) 2017-08-22
JP2024045324A (ja) 2024-04-02
CN106660120A (zh) 2017-05-10
JP2020056110A (ja) 2020-04-09
KR20170013927A (ko) 2017-02-07
JP2022062715A (ja) 2022-04-20
KR20200142123A (ko) 2020-12-21
EP3154729A4 (en) 2018-02-28
JP7489956B2 (ja) 2024-05-24
KR20190016142A (ko) 2019-02-15
JP7001659B2 (ja) 2022-01-19
KR20240112953A (ko) 2024-07-19
US11389865B2 (en) 2022-07-19
WO2015192004A1 (en) 2015-12-17
KR20220106240A (ko) 2022-07-28
EP3154729A1 (en) 2017-04-19
KR102424487B1 (ko) 2022-07-25
US20170144221A1 (en) 2017-05-25

Similar Documents

Publication Publication Date Title
JP7001659B2 (ja) 焼結材料、及びそれを用いる接着方法
US20260018559A1 (en) Sintering materials and attachment methods using same
TW201611198A (zh) 低壓燒結粉末
JP5535375B2 (ja) 接続シート
JP5296846B2 (ja) 接続シート

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20170119

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20180227

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20180525

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20180724

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180827

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190129

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20190207

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20190423

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190628

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20190730