JP2022062715A - 焼結材料、及びそれを用いる接着方法 - Google Patents
焼結材料、及びそれを用いる接着方法 Download PDFInfo
- Publication number
- JP2022062715A JP2022062715A JP2021210036A JP2021210036A JP2022062715A JP 2022062715 A JP2022062715 A JP 2022062715A JP 2021210036 A JP2021210036 A JP 2021210036A JP 2021210036 A JP2021210036 A JP 2021210036A JP 2022062715 A JP2022062715 A JP 2022062715A
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- Prior art keywords
- substrate
- die
- film
- assembly
- sintering
- Prior art date
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Images
Classifications
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- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B23K1/0016—Brazing of electronic components
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
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- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
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- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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Abstract
【解決手段】フリップチップなどのマルチチップ及び単一コンポーネントのダイ接着のための方法であって、基板の上又はダイの裏側に焼結ペーストをプリントすることを含むことができる。プリンティングは、ステンシルプリンティング、スクリーンプリンティング、又はディスペンシングプリンティングを含むことができる。ペーストは、ダイシングの前に全ウェハの裏側にプリントすることができる、又は個々のダイの裏側にプリントすることができる。また、焼結膜は、作成後、ウェハ、ダイ、又は基板に転写することができる。ポスト焼結工程は、スループットを上げることができる。
【選択図】図32
Description
・適切なステンシルを用いて、ペーストをプリントし、担体シートの上に膜を形成する工程
・前記膜を乾燥し、溶媒を全て蒸発させる工程
・前記膜を、厚いシリコーンパッドの上に載置する工程
・ウェハからダイをピックアップする工程
・前記担体シート上で、ダイパッドを、プリント、乾燥されたペースト堆積物に合わせて配列する工程
・前記ダイを押圧し、これをリフティングして、前記ペースト堆積物を前記ダイパッドに転写させる工程
・選択した温度で、適切な配置力を用いて、前記ダイを基板の上に載置する工程
・得られたアセンブリをオーブン内で所定時間、所定温度にて焼結する工程
・適切なステンシルを用いて、ペーストをプリントし、担体シートの上に膜を形成する工程
・前記膜を乾燥し、溶媒を全て蒸発させる工程
・前記膜を、厚いシリコーンパッドの上に載置する工程
・ダイシングしたウェハを、パターン化膜の上に載置し、ダイパッドをペースト堆積物に合わせて配列させる工程
・加圧及び加熱を行い、前記ペースト堆積物を前記膜から前記ダイシングしたウェハに転写させる工程
(10~90)wt% Agシェル及び(90~10)wt% Cu/Niコア
(10~90)wt% 金属シェル及び(90~10)wt% 金属コア
図13は、100ミクロン厚ステンシルを用いて、ナノ銀ペーストでプリントしたリードフレームの例を示す。ステンシル厚は、通常、ボンドライン厚みを決める。プリンティング後、リードフレームを、130℃で30分間オーブンで乾燥した。プロセスの実施に用いた装置として、ESEC(スイス)から入手可能なソフトソルダーダイボンダを用いた。標準的な装置を改造して、ピックアップアームに加熱オプションを設けた。図14は、リードフレームの温度を150℃未満に維持した各領域で用いた温度設定を示す。加熱領域1~6における温度は、ペーストを過熱及び予焼結しないように、150℃未満に設定した。接着プロセスを行った領域7における温度は、約300℃~約400℃に設定し、領域8は、同一の温度に設定した。プリントされたリードフレームを、加熱領域に割り当てる(indexed)機器に、0.5~1秒間のボンディング時間を与える速度で投入した。図15は、接着されたダイを有するリードフレームを示す。ソフトソルダーボンダにおけるダイの接着後、リードフレームの一部を、300℃で約10分間、オーブンで加熱処理(ポスト焼結)し、リードフレームに対するダイ接着を向上させた。典型的なダイシェア力は、約20MPaであった。
1つ以上の実施形態によれば、ディスペンシングによるダイ接着プロセスは、ダイサイズ及び装置によって変わり得る。第1のプロセスにおいては、ペーストをディスペンスし、続いて、非粘着性表面(例えば、テフロン(登録商標)パッドなど)を用いて平坦化することができる。次に、前記ペーストを、例えば、約130℃で約30分間、乾燥することができる。次に、前記ダイを載置して、約250℃~300℃の温度で焼結することができる。第2のプロセスにおいては、ペーストをディスペンスすることができ、ダイを、濡れた表面の上に最小限の力で載置することができる。次に、前記ペーストを、例えば、約130℃で約20~30分間、乾燥することができる。次に、前記ダイを載置して、約250℃~300℃の温度で焼結することができる。図18は、この第2のプロセスによって接着されたダイを示す。第3のプロセスにおいては、ペーストをディスペンスし、続いて、一部を軟らかい状態に維持するように部分的に乾燥することができる。幾つかの非限定的な実施形態においては、部分乾燥は、約70℃で約5分間であることができる。次に、部分乾燥に続いて、前記ダイを載置して、約250℃~300℃の温度で焼結することができる。図19は、この第3のプロセスによって接着されたダイを示す。
ウェハ積層プロセスを実施した。裏側が銀で金属化された円形のシリコーンウェハをアルミニウム板に載置した。焼結膜のシートを前記ウェハに載置し、シリコーンラバーパッドを前記焼結膜の上に載置した。次に、前記シリコーンラバーパッドをテフロン(登録商標)箔で被覆した。得られたアセンブリを、予加熱プラテン(130℃)間に載置し、約1MPaの圧力を3分間印加した。積層後のウェハと膜を図20Aに示す。次に、図20Bに示すように、焼結膜のシートを除去した。膜の円形部分を、シリコンウェハに積層し、前記シート上のバッキング層の一部を露出させ、焼結膜の残りの部分をバッキング層の上に残した。積層されたウェハを図20Cに示す。次に、積層されたウェハを1時間約130℃でベークした。
1つ以上の実施形態にしたがって、ペースト及び膜の両方の形態で同じ焼結材料を用いて、ダイを基板に焼結した。前記ペースト及び膜による焼結のプロセス条件は、大気中10MPaで約250℃とした。焼結時間が約40秒間、60秒間、及び80秒間でデータを集めた。前記ペースト及び膜の両方を用いて形成された結合について、ダイシェアテストを行った。結果を図21に示す。両形態において同等の結果が示されている。
以下の装置パラメータの各種組合せを用いて、1つ以上の実施形態に係る、焼結膜を用いるピックスタンププロセスを、小さいダイの場合と大きいダイの場合とで実施した。
装置変数
ダイ 5×5
12×12
バッキング箔 薄い(35μm)
厚い(75μm)
スタンピング支持体 ステンレス鋼製キャビティ箔
80ミクロン厚
120ミクロン厚
180ミクロン厚
シリコンラバー
PCB基板
1つ以上の実施形態にしたがって、焼結膜を有する金及びDBC基板にダイを接着した。曲げ試験の前の画像を図22Aに示し、曲げ試験の後の画像を図22Bに示す。曲げ試験から、金及びDBC基板からのダイの剥離がないことが示された。図23Aは、サーマルショック前のCSAM画像を示す。図23Bは、-50℃から165℃のリキッド・ツー・リキッドサーマルショック500サイクル後の音響顕微鏡画像を示す。剥離も結合劣化もないことが示され、このことは、結合の完全性を示す。
シリコン被覆ポリエステル膜/マイラの上にペーストを1ミルステンシルでプリントした。プリントされたパターンは、図26に示すように、異なるピッチ範囲(60um~150um)を有する360ミクロン×60ミクロン寸法の2種類のパッドデザインとした。次に、ポリエステル/マイラシートの上にプリントされたパターンを60℃で3分間加熱することにより乾燥した。
図32に係るプロセスを行った。ペーストをステンシルでシリコン被覆ポリエステル膜/マイラの上にプリントした。次に、ポリエステル/マイラの上にプリントされたパターンを、60℃で3分間加熱することにより乾燥した。完全に乾燥したプリントパターンをダイ側(Au/Ni仕上げのシリコン)に、500グラムの圧力下で85℃にて(ツール加熱)スタンピングすることにより転写した。
図32に係るプロセスを行った。ペーストをステンシルでシリコン被覆ポリエステル膜/マイラの上にプリントした。次に、ポリエステル/マイラの上にプリントされたパターンを、60℃で3分間加熱することにより乾燥した。完全に乾燥したプリントパターンをダイ側(Au/Ni仕上げのシリコン)に、500グラムの圧力下で120℃にて(ツール加熱)スタンピングすることにより転写した。
Claims (19)
- 金属粒子の膜を製造するための方法であって、
約0.001~約10μmのd50範囲を有する金属粉末を含む材料を基板の上に適用することと、
前記基板の上の前記材料を乾燥し、前記膜を形成することとを含むことを特徴とする方法。 - 前記基板が、高分子基板を含む請求項1に記載の方法。
- 前記材料の適用が、前記材料をプリンティング又はキャスティングすることを含む請求項2に記載の方法。
- 前記材料が、連続層としてプリントされる請求項2に記載の方法。
- 前記材料が、不連続形状のアレイを形成するようにプリントされる請求項2に記載の方法。
- 前記金属粉末が、コアシュル構造ナノ粒子を含む請求項1に記載の方法。
- 金属粒子の層をコンポーネントに適用するための積層プロセスであって、
高分子基板の上に前記金属粒子の層を含む膜の上に、前記コンポーネントを載置し、アセンブリを形成することと、
前記アセンブリに、約50~約200℃の範囲で熱を印加することと、
前記アセンブリに、約0.05~約10MPaの範囲で圧力を印加することと、
前記アセンブリから前記コンポーネントを剥離し、前記金属粒子の層を前記コンポーネントの上に残存させ、前記高分子基板から分離させることとを含むことを特徴とする積層プロセス。 - 前記コンポーネントが、フリップチップである請求項7に記載のプロセス。
- 接着のための方法であって、
金属粒子の膜を基板の上に適用することと、
前記膜の上にダイ又はウェハを載置し、アセンブリを形成することと、
前記アセンブリに約40MPa未満の圧力を印加することと、
約160~約400℃の温度で約0.25秒間~約120分間、前記アセンブリを焼結することとを含むことを特徴とする方法。 - ウェハをダイシングすることにより、前記ダイを形成することを更に含む請求項9に記載の方法。
- 前記ダイが、フリップチップを含む請求項10に記載の方法。
- 前記ダイ又はウェハの裏側に金属粒子の膜を適用することを更に含む請求項11に記載の方法。
- 約0.5~約20MPaの圧力を印加する請求項9に記載の方法。
- 約2.0~約10MPaの圧力を印加する請求項13に記載の方法。
- 約2.0~約10MPaの圧力を印加する請求項12に記載の方法。
- 前記温度が、約200℃である請求項9に記載の方法。
- 前記金属粒子が、コアシュル構造ナノ粒子を含む請求項9に記載の方法。
- 前記基板が、約35μm~約75μmの厚みを有する請求項9に記載の方法。
- 前記アセンブリを、約300℃の温度で約5~60分間、ポスト処理することを更に含む請求項9に記載の方法。
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5725248Y2 (ja) * | 1977-01-18 | 1982-06-01 | ||
JP2004095832A (ja) * | 2002-08-30 | 2004-03-25 | Fuji Electric Holdings Co Ltd | フリップチップ実装方法 |
JP2005044986A (ja) * | 2003-07-28 | 2005-02-17 | Nippon Steel Corp | 半導体装置およびその製造方法 |
JP2007224420A (ja) * | 2006-02-24 | 2007-09-06 | Samsung Electro-Mechanics Co Ltd | コア−シェル構造の金属ナノ粒子及びその製造方法 |
JP2010185135A (ja) * | 2009-01-14 | 2010-08-26 | Kyushu Univ | コアシェル型金属ナノ粒子の製造方法 |
US20110183128A1 (en) * | 2008-06-23 | 2011-07-28 | Yissum Research Development Company Of The Hebrew University Of Jerusalem, Ltd. | Core-shell metallic nanoparticles, methods of production thereof, and ink compositions containing same |
JP2014503936A (ja) * | 2010-11-03 | 2014-02-13 | フライズ・メタルズ・インコーポレイテッド | 焼結材料およびこれを用いた取付方法 |
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5725248Y2 (ja) * | 1977-01-18 | 1982-06-01 | ||
JP2004095832A (ja) * | 2002-08-30 | 2004-03-25 | Fuji Electric Holdings Co Ltd | フリップチップ実装方法 |
JP2005044986A (ja) * | 2003-07-28 | 2005-02-17 | Nippon Steel Corp | 半導体装置およびその製造方法 |
JP2007224420A (ja) * | 2006-02-24 | 2007-09-06 | Samsung Electro-Mechanics Co Ltd | コア−シェル構造の金属ナノ粒子及びその製造方法 |
US20110183128A1 (en) * | 2008-06-23 | 2011-07-28 | Yissum Research Development Company Of The Hebrew University Of Jerusalem, Ltd. | Core-shell metallic nanoparticles, methods of production thereof, and ink compositions containing same |
JP2010185135A (ja) * | 2009-01-14 | 2010-08-26 | Kyushu Univ | コアシェル型金属ナノ粒子の製造方法 |
JP2014503936A (ja) * | 2010-11-03 | 2014-02-13 | フライズ・メタルズ・インコーポレイテッド | 焼結材料およびこれを用いた取付方法 |
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