JP2017524946A5 - - Google Patents

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Publication number
JP2017524946A5
JP2017524946A5 JP2017512438A JP2017512438A JP2017524946A5 JP 2017524946 A5 JP2017524946 A5 JP 2017524946A5 JP 2017512438 A JP2017512438 A JP 2017512438A JP 2017512438 A JP2017512438 A JP 2017512438A JP 2017524946 A5 JP2017524946 A5 JP 2017524946A5
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Japan
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function
optical
correction
matrix
forming
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JP2017512438A
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Japanese (ja)
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JP2017524946A (ja
JP6751079B2 (ja
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Priority claimed from DE102014209348.1A external-priority patent/DE102014209348A1/de
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JP2017512438A 2014-05-16 2015-05-15 補正光学変数を求める方法及び装置 Active JP6751079B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102014209348.1 2014-05-16
DE102014209348.1A DE102014209348A1 (de) 2014-05-16 2014-05-16 Ermittlung einer korrigierten Größe
PCT/EP2015/060770 WO2015173397A1 (de) 2014-05-16 2015-05-15 Ermittlung einer korrigierten grösse

Publications (3)

Publication Number Publication Date
JP2017524946A JP2017524946A (ja) 2017-08-31
JP2017524946A5 true JP2017524946A5 (enExample) 2018-06-28
JP6751079B2 JP6751079B2 (ja) 2020-09-02

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JP2017512438A Active JP6751079B2 (ja) 2014-05-16 2015-05-15 補正光学変数を求める方法及び装置

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US (1) US9841685B2 (enExample)
JP (1) JP6751079B2 (enExample)
DE (1) DE102014209348A1 (enExample)
WO (1) WO2015173397A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3570110A1 (en) 2018-05-16 2019-11-20 ASML Netherlands B.V. Estimating a parameter of a substrate
EP3696605A1 (en) * 2019-02-13 2020-08-19 ASML Netherlands B.V. Method and lithograph apparatus for measuring a radiation beam
CN116710847A (zh) * 2021-01-19 2023-09-05 卡尔蔡司Smt有限责任公司 设置投射曝光系统的方法、投射曝光方法以及用于微光刻的投射曝光系统
US11609506B2 (en) * 2021-04-21 2023-03-21 Kla Corporation System and method for lateral shearing interferometry in an inspection tool
DE102023120807A1 (de) * 2023-08-04 2025-02-06 Asml Netherlands B.V. Verfahren und System zur Bestimmung feldabhängiger Aberrationen

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW550377B (en) * 2000-02-23 2003-09-01 Zeiss Stiftung Apparatus for wave-front detection
US7088458B1 (en) * 2002-12-23 2006-08-08 Carl Zeiss Smt Ag Apparatus and method for measuring an optical imaging system, and detector unit
JP4753009B2 (ja) * 2005-05-24 2011-08-17 株式会社ニコン 計測方法、露光方法、及び露光装置
US7580113B2 (en) * 2006-06-23 2009-08-25 Asml Netherlands B.V. Method of reducing a wave front aberration, and computer program product
JP2008186912A (ja) * 2007-01-29 2008-08-14 Nikon Corp 収差評価方法、調整方法、露光装置、露光方法、およびデバイス製造方法
JP5503193B2 (ja) * 2009-06-08 2014-05-28 キヤノン株式会社 波面収差の測定装置、露光装置及びデバイス製造方法
DE102009038558A1 (de) * 2009-08-24 2011-03-10 Carl Zeiss Sms Gmbh Verfahren zur Emulation eines fotolithographischen Prozesses und Maskeninspektionsmikroskop zur Durchführung des Verfahrens
WO2011061843A1 (ja) * 2009-11-19 2011-05-26 キヤノン株式会社 被検面の形状を計測する装置及び被検面の形状を算出するためのプログラム
DE102010062763A1 (de) * 2010-12-09 2012-06-14 Carl Zeiss Smt Gmbh Verfahren zum Vermessen eines optischen Systems
KR101529807B1 (ko) * 2011-01-20 2015-06-17 칼 짜이스 에스엠티 게엠베하 투영 노광 도구를 조작하는 방법
US9046791B2 (en) * 2011-11-30 2015-06-02 Changchun Institute Of Optics, Fine Mechanics And Physics, Chinese Academy Of Sciences Apparatuses and methods for detecting wave front abberation of projection objective system in photolithography machine
DE102012202057B4 (de) * 2012-02-10 2021-07-08 Carl Zeiss Smt Gmbh Projektionsobjektiv für EUV-Mikrolithographie, Folienelement und Verfahren zur Herstellung eines Projektionsobjektivs mit Folienelement
DE102012111008B4 (de) 2012-11-15 2014-05-22 Precitec Optronik Gmbh Optisches Messverfahren und optische Messvorrichtung zum Erfassen einer Oberflächentopographie
DE102013218991A1 (de) * 2013-09-20 2015-03-26 Carl Zeiss Smt Gmbh Vorrichtung zum Bestimmen einer optischen Eigenschaft eines optischen Abbildungssystems

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